JP4431502B2 - エピタキシによって半導体デバイスを形成する方法 - Google Patents
エピタキシによって半導体デバイスを形成する方法 Download PDFInfo
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- JP4431502B2 JP4431502B2 JP2004564805A JP2004564805A JP4431502B2 JP 4431502 B2 JP4431502 B2 JP 4431502B2 JP 2004564805 A JP2004564805 A JP 2004564805A JP 2004564805 A JP2004564805 A JP 2004564805A JP 4431502 B2 JP4431502 B2 JP 4431502B2
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- 239000004065 semiconductor Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 40
- 238000000407 epitaxy Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 122
- 235000012431 wafers Nutrition 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
- B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
Description
層を露出させる。続いて、犠牲層の1つ以上の薄い部分が残るまで、犠牲層をフッ化水素酸(シリコンをエッチングしない)で横方向にエッチングする。続いて、デバイスのシリコンおよびシリコン基板をKOH溶液で等方性エッチングする。KOHは犠牲層の材料を冒さないので、犠牲層の残りの部分は、その下のシリコンに対するマスクとして作用する。これによって、犠牲層の残りの部分がデバイス層および基板に付着している場所に、突起物が形成される。続いて犠牲層のエッチングを完了すると、基板およびデバイス層の対向する表面の上に一連の突起物が残される。この方法は、アンチ・スティクション突起物を形成するには相応に有効であり得るが、多くの場合、ウェット・エッチングのステップにおけるプロセスの変動によって、安定しない突起物の厚さ、または安定しないデバイス厚を生じ、結果としてデバイス性能に変動を生じる。
に、半導体層をエピタキシャル成長させる。半導体層をエピタキシャル成長させるステップには、開口部の半導体層の横方向エピタキシャル成長および縦方向エピタキシャル成長のいずれもが含まれてよい。続いて、半導体層に半導体構造を形成し、突起物を含んでいる犠牲層の少なくとも一部分をエッチング剤で除去する。デバイス層の厚さに対する開口部の深さの比は、デバイス層が実質的に平坦な表面を有するように、好適には充分に小さい。好適には、デバイス層の厚さに対する開口部の深さの比は、約1〜約10の範囲内、さらに好適には約2〜約5の範囲内、最も好適には約3〜約4の範囲内、である。
ッチングする。例えば、犠牲層の全般的な厚さが約1μmの場合、部分的エッチングの深さは、約0.3μm〜約0.5μmである。その後で半導体層を所望のデバイス厚までエピタキシによって成長させる時、犠牲オキサイドが露出されている場所からのシリコンの横方向エピタキシャル成長と、エピタキシャル・ポリシリコンの縦方向および横方向成長とのため、開口部が充填されることによって、アンチ・スティクション突起物が形成される。構造の解放後、突起物の周りから犠牲層を除去する時、アンチ・スティクション突起物によって、MEMSデバイスの機械的に可撓な要素における縦方向のスティクションが防止される。
Claims (3)
- 半導体構造の製造方法であって、
基板と単結晶半導体層とを有し前記基板と前記単結晶半導体層との間に堆積された犠牲層を有する物品を設けるステップと、
前記単結晶半導体層を通じて前記犠牲層の中へ延びる開口部を製造するステップと、
前記単結晶半導体層を適切なデバイス厚までエピタキシャル成長させることによってデバイス層を形成するステップと、から成り、
前記単結晶半導体層は得られる前記デバイス層が前記開口部の上方に延びるように成長させられ、
前記開口部の上方に延びる前記デバイス層の表面部分は単結晶シリコンであり、
前記単結晶半導体層をエピタキシャル成長させるステップによってデバイス層及び犠牲層内にアンチ・スティクション突起物が形成される、製造方法。 - 半導体構造の製造方法であって、
基板と単結晶半導体層とを有し前記基板と前記単結晶半導体層との間に堆積された犠牲層を有する物品を設けるステップと、
前記単結晶半導体層を通じて前記犠牲層の中へ延びる少なくとも1つの開口部を製造するステップと、
前記単結晶半導体層を適切なデバイス厚までエピタキシャル成長させることによってデバイス層を形成するステップと、
前記単結晶半導体層に半導体構造を形成するステップと、
前記犠牲層の少なくとも一部分をエッチング剤で除去することによって前記半導体構造を解放するステップと、から成り、
前記単結晶半導体層は得られる前記デバイス層が前記開口部の上方に延びるように成長させられ、
前記開口部の上方に延びる前記デバイス層の表面部分は単結晶シリコンであり、
前記単結晶半導体層をエピタキシャル成長させるステップによってデバイス層及び犠牲層内にアンチ・スティクション突起物が形成されるとともに、デバイス層の材料が前記開口部の中へ延びることによって前記犠牲層を通じて延びるアンカー部分が形成される、製造方法。 - アンチ・スティクション突起物を有する半導体構造の製造方法であって、
基板と半導体層とを有し前記基板と前記半導体層との間に堆積された犠牲層を有する物品を設けるステップと、
前記半導体層を通じて前記犠牲層の中へ部分的に延びる少なくとも1つの開口部を製造するステップと、
デバイス層の材料が前記開口部の中へ延びることによって前記デバイス層から前記犠牲層の中へ延びるアンチ・スティクション突起物を形成するように、前記デバイス層を形成するために、前記半導体層をエピタキシャル成長させるステップと、
前記半導体層に半導体構造を形成するステップと、
前記アンチ・スティクション突起物を囲む前記犠牲層の少なくとも一部分をエッチング剤で除去するステップと、から成る、製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/328,922 US7122395B2 (en) | 2002-12-23 | 2002-12-23 | Method of forming semiconductor devices through epitaxy |
PCT/US2003/033630 WO2004060792A2 (en) | 2002-12-23 | 2003-10-23 | Method of forming semiconductor devices through epitaxy |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006524138A JP2006524138A (ja) | 2006-10-26 |
JP2006524138A5 JP2006524138A5 (ja) | 2006-12-07 |
JP4431502B2 true JP4431502B2 (ja) | 2010-03-17 |
Family
ID=32594621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004564805A Expired - Fee Related JP4431502B2 (ja) | 2002-12-23 | 2003-10-23 | エピタキシによって半導体デバイスを形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7122395B2 (ja) |
EP (1) | EP1578685A2 (ja) |
JP (1) | JP4431502B2 (ja) |
KR (1) | KR101031990B1 (ja) |
CN (1) | CN100440420C (ja) |
AU (1) | AU2003286625A1 (ja) |
WO (1) | WO2004060792A2 (ja) |
Families Citing this family (22)
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US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
US6952041B2 (en) * | 2003-07-25 | 2005-10-04 | Robert Bosch Gmbh | Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same |
KR100605368B1 (ko) * | 2004-10-20 | 2006-07-28 | 삼성전자주식회사 | Soi기판, 그 제조방법, 그리고, 그 soi기판을이용한 부유 구조체 제조 방법 |
US20060278942A1 (en) * | 2005-06-14 | 2006-12-14 | Innovative Micro Technology | Antistiction MEMS substrate and method of manufacture |
KR20080031846A (ko) * | 2005-06-27 | 2008-04-11 | 도오레 화인케미칼 가부시키가이샤 | 경화형 조성물 |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
US7468327B2 (en) * | 2006-06-13 | 2008-12-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of fabricating a micromechanical structure |
US7485524B2 (en) * | 2006-06-21 | 2009-02-03 | International Business Machines Corporation | MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same |
DE102006049886B4 (de) * | 2006-10-23 | 2014-10-16 | Robert Bosch Gmbh | Mikromechanisches Bauelement mit einer schwingfähigen mikromechanischen Struktur, Sensorbauelement und Verfahren zur Herstellung eines Bauelements |
US7919006B2 (en) * | 2007-10-31 | 2011-04-05 | Freescale Semiconductor, Inc. | Method of anti-stiction dimple formation under MEMS |
US7579202B2 (en) * | 2007-12-21 | 2009-08-25 | Tekcore Co., Ltd. | Method for fabricating light emitting diode element |
ITTO20090616A1 (it) * | 2009-08-05 | 2011-02-06 | St Microelectronics Srl | Procedimento di fabbricazione di dispositivi mems dotati di cavita' sepolte e dispositivo mems cosi' ottenuto |
FR2954505B1 (fr) * | 2009-12-22 | 2012-08-03 | Commissariat Energie Atomique | Structure micromecanique comportant une partie mobile presentant des butees pour des deplacements hors plan de la structure et son procede de realisation |
US9023729B2 (en) * | 2011-12-23 | 2015-05-05 | Athenaeum, Llc | Epitaxy level packaging |
CN103681233B (zh) * | 2012-09-05 | 2016-06-15 | 无锡华润上华半导体有限公司 | 一种多沟槽结构的制作方法 |
US9249012B2 (en) | 2013-01-25 | 2016-02-02 | Mcube, Inc. | Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures |
US10132630B2 (en) | 2013-01-25 | 2018-11-20 | MCube Inc. | Multi-axis integrated MEMS inertial sensing device on single packaged chip |
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US9090452B2 (en) * | 2013-12-06 | 2015-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanism for forming MEMS device |
US10522388B1 (en) | 2018-08-24 | 2019-12-31 | Tower Semiconductor Ltd. | Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer |
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-
2002
- 2002-12-23 US US10/328,922 patent/US7122395B2/en not_active Expired - Fee Related
-
2003
- 2003-10-23 EP EP03777831A patent/EP1578685A2/en not_active Withdrawn
- 2003-10-23 JP JP2004564805A patent/JP4431502B2/ja not_active Expired - Fee Related
- 2003-10-23 KR KR1020057011908A patent/KR101031990B1/ko not_active IP Right Cessation
- 2003-10-23 CN CNB2003801074214A patent/CN100440420C/zh not_active Expired - Fee Related
- 2003-10-23 AU AU2003286625A patent/AU2003286625A1/en not_active Abandoned
- 2003-10-23 WO PCT/US2003/033630 patent/WO2004060792A2/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2004060792A2 (en) | 2004-07-22 |
AU2003286625A1 (en) | 2004-07-29 |
KR20050085889A (ko) | 2005-08-29 |
US7122395B2 (en) | 2006-10-17 |
US20040121564A1 (en) | 2004-06-24 |
EP1578685A2 (en) | 2005-09-28 |
JP2006524138A (ja) | 2006-10-26 |
CN100440420C (zh) | 2008-12-03 |
CN1732123A (zh) | 2006-02-08 |
KR101031990B1 (ko) | 2011-05-02 |
WO2004060792A3 (en) | 2004-10-21 |
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