KR940020510A - 반도체 기판 및 그 제조방법 - Google Patents

반도체 기판 및 그 제조방법 Download PDF

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Publication number
KR940020510A
KR940020510A KR1019940003032A KR19940003032A KR940020510A KR 940020510 A KR940020510 A KR 940020510A KR 1019940003032 A KR1019940003032 A KR 1019940003032A KR 19940003032 A KR19940003032 A KR 19940003032A KR 940020510 A KR940020510 A KR 940020510A
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South Korea
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heat treatment
pieces
hours
semiconductor substrate
depth
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KR1019940003032A
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KR0139730B1 (ko
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요코 이노우에
수이치 사마타
Original Assignee
사또오 후미오
가부시기가이샤 도시바
오카모토 세이시
도시바 마이크로 일렉트로닉스 가부시기가이샤
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Publication of KR940020510A publication Critical patent/KR940020510A/ko
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Publication of KR0139730B1 publication Critical patent/KR0139730B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

ST1으로 성장시켜서, ST2로 성형한 CZ 웨이퍼에 대하여 ST3에 있어서, 비산화 분위기로 1150℃ 이상, 30분 이상의 열처리를 한다(예 : 15% H2함유 Ar 가스중·1200℃·1시간), 이로써 디바이스 형성면으로부터의 깊이가 20㎛이상의 내부에서는 104개/㎠ 이상이고 그보다 얕은층에서는 0.1~103개/㎠의 BMD밀도 프로파일을 갖는 웨이퍼가 작성된다.
이 프로파일을 보는데는 다시 그 웨이퍼에 대하여 ST4로 산소 분위기·780℃·3시간의 열처리를 하고 그후, ST5로 산소분위기·1100℃·16 시간의 열처리를 한다. 이것으로써 BMD를 현미경으로 확인할 수 있다.
디바이스 형성면 부근의 사실상의 무결함화 및 내부의 충분한 게터 능력을 실현할 수 있다. 이로써 제품의 수율향상에 이바지할 수 있다.

Description

반도체 기판 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 관한 제조방법의 흐름을 나타내는 블록도.
제2도는 제1도에 도시한 제조방법에 의하여 작성되는 웨이퍼의 BMD 밀도 프로파일을 그래프(A) 및 확대 단면도(B)로 나타낸 설명도.

Claims (3)

  1. 반소 분위기 중에서 780℃에서 3시간의 열처리를 하고 이어서 산소 분위기 중에서 1100℃에서, 16시간의 열처리를 한 뒤에 BMD 관찰을 하였을 때의 디바이스 형성면으로부터 10㎛의 깊이까지의 BMD 밀도는 0.1~1000개/㎠인 것을 특징으로 하는 반도체 기판.
  2. 제1항에 있어서, 디바이스 형성면에서 20㎛ 이상의 깊이의 층에 있어서의 BMD 밀도는 104개/㎠ 이상인 것을 특징으로 하는 반도체 기판.
  3. 반도체 기판의 제조방법에 있어서, CZ법에 의하여 반도체 결정을 성장시키는 제1공정과; 상기 반도체 결정으로 이루어진 결정체를 기판 형상으로 성형하는 제2공정과; 그 기판 형상 성형체에 대하여 비산화 분위기 중에서 1150℃ 이상, 30분 이상의 열처리를 행하는 제3공정을 포함하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940003032A 1993-02-23 1994-02-21 반도체 기판 및 그 제조방법 KR0139730B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-033574 1993-02-23
JP3357493 1993-02-23

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KR940020510A true KR940020510A (ko) 1994-09-16
KR0139730B1 KR0139730B1 (ko) 1998-06-01

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US (1) US5502331A (ko)
KR (1) KR0139730B1 (ko)

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US5502331A (en) 1996-03-26
KR0139730B1 (ko) 1998-06-01

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