JP2006525132A5 - - Google Patents

Download PDF

Info

Publication number
JP2006525132A5
JP2006525132A5 JP2006513083A JP2006513083A JP2006525132A5 JP 2006525132 A5 JP2006525132 A5 JP 2006525132A5 JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006525132 A5 JP2006525132 A5 JP 2006525132A5
Authority
JP
Japan
Prior art keywords
sacrificial layer
substrate
layer
depositing
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006513083A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006525132A (ja
Filing date
Publication date
Priority claimed from US10/426,148 external-priority patent/US7005193B2/en
Application filed filed Critical
Publication of JP2006525132A publication Critical patent/JP2006525132A/ja
Publication of JP2006525132A5 publication Critical patent/JP2006525132A5/ja
Pending legal-status Critical Current

Links

JP2006513083A 2003-04-29 2004-04-16 Ｍｅｍｓ構造体に質量を付加する方法 Pending JP2006525132A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/426,148 US7005193B2 (en) 2003-04-29 2003-04-29 Method of adding mass to MEMS structures
PCT/US2004/011867 WO2004097895A2 (en) 2003-04-29 2004-04-16 A method of adding mass to mems structures

Publications (2)

Publication Number Publication Date
JP2006525132A JP2006525132A (ja) 2006-11-09
JP2006525132A5 true JP2006525132A5 (enExample) 2007-05-17

Family

ID=33309806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006513083A Pending JP2006525132A (ja) 2003-04-29 2004-04-16 Ｍｅｍｓ構造体に質量を付加する方法

Country Status (7)

Country Link
US (1) US7005193B2 (enExample)
EP (1) EP1620257A2 (enExample)
JP (1) JP2006525132A (enExample)
KR (1) KR20060015554A (enExample)
CN (1) CN1780732B (enExample)
TW (1) TWI337780B (enExample)
WO (1) WO2004097895A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006263888A (ja) * 2005-03-25 2006-10-05 Osaka Industrial Promotion Organization デバイスの製造方法
US7578190B2 (en) * 2007-08-03 2009-08-25 Freescale Semiconductor, Inc. Symmetrical differential capacitive sensor and method of making same
CN102538834B (zh) * 2008-05-27 2015-01-14 原相科技股份有限公司 同平面传感器与制作方法
US8096182B2 (en) * 2008-05-29 2012-01-17 Freescale Semiconductor, Inc. Capacitive sensor with stress relief that compensates for package stress
DE102008043788A1 (de) * 2008-11-17 2010-05-20 Robert Bosch Gmbh Mikromechanisches Bauelement
US8739626B2 (en) 2009-08-04 2014-06-03 Fairchild Semiconductor Corporation Micromachined inertial sensor devices
EP2616389B1 (en) 2010-09-18 2017-04-05 Fairchild Semiconductor Corporation Multi-die mems package
US9278845B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope Z-axis electrode structure
EP2616771B8 (en) 2010-09-18 2018-12-19 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
KR101352827B1 (ko) 2010-09-18 2014-01-17 페어차일드 세미컨덕터 코포레이션 단일 프루프 매스를 가진 미세기계화 3축 가속도계
US9156673B2 (en) 2010-09-18 2015-10-13 Fairchild Semiconductor Corporation Packaging to reduce stress on microelectromechanical systems
WO2012037501A2 (en) 2010-09-18 2012-03-22 Cenk Acar Flexure bearing to reduce quadrature for resonating micromachined devices
EP2619130A4 (en) 2010-09-20 2014-12-10 Fairchild Semiconductor SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY
WO2012040211A2 (en) 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
CN102530831B (zh) * 2010-12-27 2014-05-21 上海丽恒光微电子科技有限公司 Mems器件的制作方法
IL214294A0 (en) * 2011-07-26 2011-09-27 Rafael Advanced Defense Sys Surface micro-machined switching device
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US8978475B2 (en) 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
EP2648334B1 (en) 2012-04-05 2020-06-10 Fairchild Semiconductor Corporation Mems device front-end charge amplifier
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
KR101999745B1 (ko) 2012-04-12 2019-10-01 페어차일드 세미컨덕터 코포레이션 미세 전자 기계 시스템 구동기
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
DE102013014881B4 (de) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
WO2015026368A1 (en) * 2013-08-23 2015-02-26 Intel Corporation Mems devices utilizing a thick metal layer of an interconnect metal film stack
US9296606B2 (en) * 2014-02-04 2016-03-29 Invensense, Inc. MEMS device with a stress-isolation structure
CN105785072A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种mems加速度传感器及其制造方法
US10697994B2 (en) 2017-02-22 2020-06-30 Semiconductor Components Industries, Llc Accelerometer techniques to compensate package stress
CN109211217A (zh) * 2017-07-06 2019-01-15 立锜科技股份有限公司 微机电装置
CN110823259B (zh) * 2019-10-15 2021-08-27 上海集成电路研发中心有限公司 一种惯性传感器及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0268351B1 (en) * 1986-08-25 1991-10-23 Richard A. Hanson Proof mass suspension assembly for an accelerometer
US4901570A (en) * 1988-11-21 1990-02-20 General Motors Corporation Resonant-bridge two axis microaccelerometer
US5605598A (en) * 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
JPH04339266A (ja) * 1991-02-08 1992-11-26 Tokai Rika Co Ltd 加速度センサおよびその製造方法
JPH07117553B2 (ja) * 1992-06-03 1995-12-18 日産自動車株式会社 半導体加速度センサの製造方法
JPH06258338A (ja) * 1993-03-09 1994-09-16 Matsushita Electric Works Ltd 半導体加速度センサ
KR0139506B1 (ko) * 1994-10-07 1998-07-15 전성원 자체진단 기능을 구비한 대칭질량형 가속도계 및 그 제조방법
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
JPH11271351A (ja) * 1998-03-19 1999-10-08 Mitsubishi Electric Corp 圧電検出素子
JP2000088878A (ja) * 1998-09-09 2000-03-31 Tokai Rika Co Ltd 加速度スイッチ及びその製造方法
US6228275B1 (en) * 1998-12-10 2001-05-08 Motorola, Inc. Method of manufacturing a sensor
JP3392069B2 (ja) * 1999-02-15 2003-03-31 松下電工株式会社 半導体加速度センサおよびその製造方法
US6401536B1 (en) * 2000-02-11 2002-06-11 Motorola, Inc. Acceleration sensor and method of manufacture
US6504385B2 (en) * 2001-05-31 2003-01-07 Hewlett-Pakcard Company Three-axis motion sensor
US6619123B2 (en) * 2001-06-04 2003-09-16 Wisconsin Alumni Research Foundation Micromachined shock sensor
JP2003050249A (ja) * 2001-08-08 2003-02-21 Tokai Rika Co Ltd 加速度センサ及びその製造方法

Similar Documents

Publication Publication Date Title
JP2006525132A5 (enExample)
JPH06267929A (ja) 微細構造物の製法
US6787968B2 (en) Freestanding polymer MEMS structures with anti stiction
US7153717B2 (en) Encapsulation of MEMS devices using pillar-supported caps
JP2002011700A5 (enExample)
JP2006501670A5 (enExample)
RU2005129861A (ru) Способ селективного травления с использованием слоев остановки травления
CN101351401A (zh) 利用支撑构件形成麦克风的过程
JP2009505163A5 (enExample)
JP2005223479A5 (enExample)
TW200919593A (en) Elements and modules with micro caps and wafer level packaging method thereof
EP1426328A3 (fr) Procédé de réalisation par CVD de nano-structures de matériau semi-conducteur sur diélectrique, de tailles homogènes et contrôlées
JP2005059125A5 (ja) 構造体及びその製造方法
EP1213259A3 (en) Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step
JP5390496B2 (ja) 微細加工可能な材料から作られる自由に搭載されるホイール・セットおよびそれを製作する方法
JP2008519695A5 (enExample)
JP5111687B1 (ja) 転写金型の製造方法、それによって作製された転写金型、及びその転写金型によって作製された部品
TWI300581B (en) Method of manufacturing suspension structure
CN115769437A (zh) 金属网格的制备方法、薄膜传感器及其制备方法
JP5073878B1 (ja) 転写金型の製造方法、それによって作製された転写金型、及びその転写金型によって作製された部品
TWI334062B (en) Method of manufacturing suspension structure and chamber
JP5486238B2 (ja) 微細構造体形成方法
JP2004004052A (ja) Ｓｐｍセンサーとその製造法
JP2002363730A5 (enExample)
JP5608462B2 (ja) インプリントモールドの製造方法