JP2006525132A - Ｍｅｍｓ構造体に質量を付加する方法 - Google Patents

Ｍｅｍｓ構造体に質量を付加する方法 Download PDF

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Publication number
JP2006525132A
JP2006525132A JP2006513083A JP2006513083A JP2006525132A JP 2006525132 A JP2006525132 A JP 2006525132A JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006513083 A JP2006513083 A JP 2006513083A JP 2006525132 A JP2006525132 A JP 2006525132A
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Prior art keywords
proof mass
base
sacrificial layer
appendage
layer
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JP2006513083A
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Japanese (ja)
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JP2006525132A5 (enExample
Inventor
シー． マクニール、アンドリュー
リ、ゲイリー
ジェイ． オブライエン、ゲイリー
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NXP USA Inc
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NXP USA Inc
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Publication of JP2006525132A5 publication Critical patent/JP2006525132A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0888—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values for indicating angular acceleration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2006513083A 2003-04-29 2004-04-16 Ｍｅｍｓ構造体に質量を付加する方法 Pending JP2006525132A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/426,148 US7005193B2 (en) 2003-04-29 2003-04-29 Method of adding mass to MEMS structures
PCT/US2004/011867 WO2004097895A2 (en) 2003-04-29 2004-04-16 A method of adding mass to mems structures

Publications (2)

Publication Number Publication Date
JP2006525132A true JP2006525132A (ja) 2006-11-09
JP2006525132A5 JP2006525132A5 (enExample) 2007-05-17

Family

ID=33309806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006513083A Pending JP2006525132A (ja) 2003-04-29 2004-04-16 Ｍｅｍｓ構造体に質量を付加する方法

Country Status (7)

Country Link
US (1) US7005193B2 (enExample)
EP (1) EP1620257A2 (enExample)
JP (1) JP2006525132A (enExample)
KR (1) KR20060015554A (enExample)
CN (1) CN1780732B (enExample)
TW (1) TWI337780B (enExample)
WO (1) WO2004097895A2 (enExample)

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JP2006263888A (ja) * 2005-03-25 2006-10-05 Osaka Industrial Promotion Organization デバイスの製造方法
US7578190B2 (en) * 2007-08-03 2009-08-25 Freescale Semiconductor, Inc. Symmetrical differential capacitive sensor and method of making same
CN102538834B (zh) * 2008-05-27 2015-01-14 原相科技股份有限公司 同平面传感器与制作方法
US8096182B2 (en) * 2008-05-29 2012-01-17 Freescale Semiconductor, Inc. Capacitive sensor with stress relief that compensates for package stress
DE102008043788A1 (de) * 2008-11-17 2010-05-20 Robert Bosch Gmbh Mikromechanisches Bauelement
US8739626B2 (en) 2009-08-04 2014-06-03 Fairchild Semiconductor Corporation Micromachined inertial sensor devices
EP2616389B1 (en) 2010-09-18 2017-04-05 Fairchild Semiconductor Corporation Multi-die mems package
US9278845B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope Z-axis electrode structure
EP2616771B8 (en) 2010-09-18 2018-12-19 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
KR101352827B1 (ko) 2010-09-18 2014-01-17 페어차일드 세미컨덕터 코포레이션 단일 프루프 매스를 가진 미세기계화 3축 가속도계
US9156673B2 (en) 2010-09-18 2015-10-13 Fairchild Semiconductor Corporation Packaging to reduce stress on microelectromechanical systems
WO2012037501A2 (en) 2010-09-18 2012-03-22 Cenk Acar Flexure bearing to reduce quadrature for resonating micromachined devices
EP2619130A4 (en) 2010-09-20 2014-12-10 Fairchild Semiconductor SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY
WO2012040211A2 (en) 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
CN102530831B (zh) * 2010-12-27 2014-05-21 上海丽恒光微电子科技有限公司 Mems器件的制作方法
IL214294A0 (en) * 2011-07-26 2011-09-27 Rafael Advanced Defense Sys Surface micro-machined switching device
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US8978475B2 (en) 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
EP2648334B1 (en) 2012-04-05 2020-06-10 Fairchild Semiconductor Corporation Mems device front-end charge amplifier
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
KR101999745B1 (ko) 2012-04-12 2019-10-01 페어차일드 세미컨덕터 코포레이션 미세 전자 기계 시스템 구동기
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
DE102013014881B4 (de) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
WO2015026368A1 (en) * 2013-08-23 2015-02-26 Intel Corporation Mems devices utilizing a thick metal layer of an interconnect metal film stack
US9296606B2 (en) * 2014-02-04 2016-03-29 Invensense, Inc. MEMS device with a stress-isolation structure
CN105785072A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种mems加速度传感器及其制造方法
US10697994B2 (en) 2017-02-22 2020-06-30 Semiconductor Components Industries, Llc Accelerometer techniques to compensate package stress
CN109211217A (zh) * 2017-07-06 2019-01-15 立锜科技股份有限公司 微机电装置
CN110823259B (zh) * 2019-10-15 2021-08-27 上海集成电路研发中心有限公司 一种惯性传感器及其制备方法

Citations (8)

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JPH04339266A (ja) * 1991-02-08 1992-11-26 Tokai Rika Co Ltd 加速度センサおよびその製造方法
JPH05273230A (ja) * 1992-06-03 1993-10-22 Nissan Motor Co Ltd 半導体加速度センサの製造方法
JPH06258338A (ja) * 1993-03-09 1994-09-16 Matsushita Electric Works Ltd 半導体加速度センサ
JPH11271351A (ja) * 1998-03-19 1999-10-08 Mitsubishi Electric Corp 圧電検出素子
JP2000088878A (ja) * 1998-09-09 2000-03-31 Tokai Rika Co Ltd 加速度スイッチ及びその製造方法
JP2000183364A (ja) * 1998-12-10 2000-06-30 Motorola Inc センサおよび製造方法
JP2000235044A (ja) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd 半導体加速度センサおよびその製造方法
JP2003050249A (ja) * 2001-08-08 2003-02-21 Tokai Rika Co Ltd 加速度センサ及びその製造方法

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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04339266A (ja) * 1991-02-08 1992-11-26 Tokai Rika Co Ltd 加速度センサおよびその製造方法
JPH05273230A (ja) * 1992-06-03 1993-10-22 Nissan Motor Co Ltd 半導体加速度センサの製造方法
JPH06258338A (ja) * 1993-03-09 1994-09-16 Matsushita Electric Works Ltd 半導体加速度センサ
JPH11271351A (ja) * 1998-03-19 1999-10-08 Mitsubishi Electric Corp 圧電検出素子
JP2000088878A (ja) * 1998-09-09 2000-03-31 Tokai Rika Co Ltd 加速度スイッチ及びその製造方法
JP2000183364A (ja) * 1998-12-10 2000-06-30 Motorola Inc センサおよび製造方法
JP2000235044A (ja) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd 半導体加速度センサおよびその製造方法
JP2003050249A (ja) * 2001-08-08 2003-02-21 Tokai Rika Co Ltd 加速度センサ及びその製造方法

Also Published As

Publication number Publication date
KR20060015554A (ko) 2006-02-17
US7005193B2 (en) 2006-02-28
CN1780732A (zh) 2006-05-31
TWI337780B (en) 2011-02-21
WO2004097895A2 (en) 2004-11-11
WO2004097895A3 (en) 2005-03-24
EP1620257A2 (en) 2006-02-01
TW200520234A (en) 2005-06-16
US20040219340A1 (en) 2004-11-04
CN1780732B (zh) 2012-04-25

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