TWI337780B - A method of adding mass to mems structures - Google Patents
A method of adding mass to mems structures Download PDFInfo
- Publication number
- TWI337780B TWI337780B TW093111970A TW93111970A TWI337780B TW I337780 B TWI337780 B TW I337780B TW 093111970 A TW093111970 A TW 093111970A TW 93111970 A TW93111970 A TW 93111970A TW I337780 B TWI337780 B TW I337780B
- Authority
- TW
- Taiwan
- Prior art keywords
- attachment
- layer
- measurement
- substrate
- pedestal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims description 63
- 238000005259 measurement Methods 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 30
- 230000001939 inductive effect Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 235000021028 berry Nutrition 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0888—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values for indicating angular acceleration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/426,148 US7005193B2 (en) | 2003-04-29 | 2003-04-29 | Method of adding mass to MEMS structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200520234A TW200520234A (en) | 2005-06-16 |
| TWI337780B true TWI337780B (en) | 2011-02-21 |
Family
ID=33309806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093111970A TWI337780B (en) | 2003-04-29 | 2004-04-29 | A method of adding mass to mems structures |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7005193B2 (enExample) |
| EP (1) | EP1620257A2 (enExample) |
| JP (1) | JP2006525132A (enExample) |
| KR (1) | KR20060015554A (enExample) |
| CN (1) | CN1780732B (enExample) |
| TW (1) | TWI337780B (enExample) |
| WO (1) | WO2004097895A2 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006263888A (ja) * | 2005-03-25 | 2006-10-05 | Osaka Industrial Promotion Organization | デバイスの製造方法 |
| US7578190B2 (en) * | 2007-08-03 | 2009-08-25 | Freescale Semiconductor, Inc. | Symmetrical differential capacitive sensor and method of making same |
| CN102538834B (zh) * | 2008-05-27 | 2015-01-14 | 原相科技股份有限公司 | 同平面传感器与制作方法 |
| US8096182B2 (en) * | 2008-05-29 | 2012-01-17 | Freescale Semiconductor, Inc. | Capacitive sensor with stress relief that compensates for package stress |
| DE102008043788A1 (de) * | 2008-11-17 | 2010-05-20 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
| US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
| EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
| EP2616771B8 (en) | 2010-09-18 | 2018-12-19 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| KR101352827B1 (ko) | 2010-09-18 | 2014-01-17 | 페어차일드 세미컨덕터 코포레이션 | 단일 프루프 매스를 가진 미세기계화 3축 가속도계 |
| US9156673B2 (en) | 2010-09-18 | 2015-10-13 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
| WO2012037501A2 (en) | 2010-09-18 | 2012-03-22 | Cenk Acar | Flexure bearing to reduce quadrature for resonating micromachined devices |
| EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
| WO2012040211A2 (en) | 2010-09-20 | 2012-03-29 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
| CN102530831B (zh) * | 2010-12-27 | 2014-05-21 | 上海丽恒光微电子科技有限公司 | Mems器件的制作方法 |
| IL214294A0 (en) * | 2011-07-26 | 2011-09-27 | Rafael Advanced Defense Sys | Surface micro-machined switching device |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
| EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
| EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
| EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| KR101999745B1 (ko) | 2012-04-12 | 2019-10-01 | 페어차일드 세미컨덕터 코포레이션 | 미세 전자 기계 시스템 구동기 |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
| WO2015026368A1 (en) * | 2013-08-23 | 2015-02-26 | Intel Corporation | Mems devices utilizing a thick metal layer of an interconnect metal film stack |
| US9296606B2 (en) * | 2014-02-04 | 2016-03-29 | Invensense, Inc. | MEMS device with a stress-isolation structure |
| CN105785072A (zh) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种mems加速度传感器及其制造方法 |
| US10697994B2 (en) | 2017-02-22 | 2020-06-30 | Semiconductor Components Industries, Llc | Accelerometer techniques to compensate package stress |
| CN109211217A (zh) * | 2017-07-06 | 2019-01-15 | 立锜科技股份有限公司 | 微机电装置 |
| CN110823259B (zh) * | 2019-10-15 | 2021-08-27 | 上海集成电路研发中心有限公司 | 一种惯性传感器及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0268351B1 (en) * | 1986-08-25 | 1991-10-23 | Richard A. Hanson | Proof mass suspension assembly for an accelerometer |
| US4901570A (en) * | 1988-11-21 | 1990-02-20 | General Motors Corporation | Resonant-bridge two axis microaccelerometer |
| US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
| JPH04339266A (ja) * | 1991-02-08 | 1992-11-26 | Tokai Rika Co Ltd | 加速度センサおよびその製造方法 |
| JPH07117553B2 (ja) * | 1992-06-03 | 1995-12-18 | 日産自動車株式会社 | 半導体加速度センサの製造方法 |
| JPH06258338A (ja) * | 1993-03-09 | 1994-09-16 | Matsushita Electric Works Ltd | 半導体加速度センサ |
| KR0139506B1 (ko) * | 1994-10-07 | 1998-07-15 | 전성원 | 자체진단 기능을 구비한 대칭질량형 가속도계 및 그 제조방법 |
| US5726480A (en) * | 1995-01-27 | 1998-03-10 | The Regents Of The University Of California | Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same |
| JPH11271351A (ja) * | 1998-03-19 | 1999-10-08 | Mitsubishi Electric Corp | 圧電検出素子 |
| JP2000088878A (ja) * | 1998-09-09 | 2000-03-31 | Tokai Rika Co Ltd | 加速度スイッチ及びその製造方法 |
| US6228275B1 (en) * | 1998-12-10 | 2001-05-08 | Motorola, Inc. | Method of manufacturing a sensor |
| JP3392069B2 (ja) * | 1999-02-15 | 2003-03-31 | 松下電工株式会社 | 半導体加速度センサおよびその製造方法 |
| US6401536B1 (en) * | 2000-02-11 | 2002-06-11 | Motorola, Inc. | Acceleration sensor and method of manufacture |
| US6504385B2 (en) * | 2001-05-31 | 2003-01-07 | Hewlett-Pakcard Company | Three-axis motion sensor |
| US6619123B2 (en) * | 2001-06-04 | 2003-09-16 | Wisconsin Alumni Research Foundation | Micromachined shock sensor |
| JP2003050249A (ja) * | 2001-08-08 | 2003-02-21 | Tokai Rika Co Ltd | 加速度センサ及びその製造方法 |
-
2003
- 2003-04-29 US US10/426,148 patent/US7005193B2/en not_active Expired - Fee Related
-
2004
- 2004-04-16 JP JP2006513083A patent/JP2006525132A/ja active Pending
- 2004-04-16 WO PCT/US2004/011867 patent/WO2004097895A2/en not_active Ceased
- 2004-04-16 EP EP04750262A patent/EP1620257A2/en not_active Withdrawn
- 2004-04-16 CN CN200480011500XA patent/CN1780732B/zh not_active Expired - Fee Related
- 2004-04-16 KR KR1020057020574A patent/KR20060015554A/ko not_active Ceased
- 2004-04-29 TW TW093111970A patent/TWI337780B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060015554A (ko) | 2006-02-17 |
| US7005193B2 (en) | 2006-02-28 |
| CN1780732A (zh) | 2006-05-31 |
| WO2004097895A2 (en) | 2004-11-11 |
| WO2004097895A3 (en) | 2005-03-24 |
| EP1620257A2 (en) | 2006-02-01 |
| TW200520234A (en) | 2005-06-16 |
| US20040219340A1 (en) | 2004-11-04 |
| JP2006525132A (ja) | 2006-11-09 |
| CN1780732B (zh) | 2012-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI337780B (en) | A method of adding mass to mems structures | |
| JP4871513B2 (ja) | 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法 | |
| US9146252B2 (en) | In-plane piezoresistive detection sensor | |
| EP2339357B1 (en) | Method for fabricating a sensor | |
| US4882933A (en) | Accelerometer with integral bidirectional shock protection and controllable viscous damping | |
| EP0623825B1 (en) | Accelerometer sense element | |
| US6792804B2 (en) | Sensor for measuring out-of-plane acceleration | |
| US6936492B2 (en) | Single proof mass, 3 axis MEMS transducer | |
| US9061895B2 (en) | Micromechanical structure comprising a mobile part having stops for out-of plane displacements of the structure and its production process | |
| EP2387722B1 (en) | Method of forming a device with a piezoresistor and accelerometer | |
| US4969359A (en) | Silicon accelerometer responsive to three orthogonal force components and method for fabricating | |
| Chu et al. | Measurements of material properties using differential capacitive strain sensors | |
| JPH10177033A (ja) | 加速度測定装置 | |
| EP3151018B1 (en) | Mems sensor with reduced cross-axis sensitivity | |
| JP6022587B2 (ja) | 変形可能な膜と強い変形に対する保護とを有する微小機械構造 | |
| US9745189B1 (en) | MEMS device with isolation sub-frame structure | |
| TW201922610A (zh) | 微機械ｚ軸慣性感測器 | |
| CN108008150A (zh) | 一种低交叉轴灵敏度压阻式加速度计结构及制作方法 | |
| US7637160B2 (en) | MEMS suspension and anchoring design | |
| CN107643424B (zh) | 一种压阻式mems加速度芯片及其制作方法 | |
| JPH04249727A (ja) | 力および加速度の検出装置 | |
| TW541434B (en) | Structure of pendulum micromachined inertia sensor and manufacturing method thereof | |
| JPH1172505A (ja) | 加速度センサおよびその製造方法 | |
| US20210114865A1 (en) | Hinged microelectromechanical and/or nanoelectromechanical device with out-of-plane movement | |
| KR20200043816A (ko) | Mems 가속도계 및 이의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |