WO2009072378A1 - ＡｌＮ結晶およびその成長方法 - Google Patents

ＡｌＮ結晶およびその成長方法 Download PDF

Info

Publication number
WO2009072378A1
WO2009072378A1 PCT/JP2008/070648 JP2008070648W WO2009072378A1 WO 2009072378 A1 WO2009072378 A1 WO 2009072378A1 JP 2008070648 W JP2008070648 W JP 2008070648W WO 2009072378 A1 WO2009072378 A1 WO 2009072378A1
Authority
WO
WIPO (PCT)
Prior art keywords
growing
aln crystal
same
less
micropipes
Prior art date
Application number
PCT/JP2008/070648
Other languages
English (en)
French (fr)
Inventor
Issei Satoh
Naho Mizuhara
Keisuke Tanizaki
Michimasa Miyanaga
Hideaki Nakahata
Original Assignee
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Ltd. filed Critical Sumitomo Electric Industries, Ltd.
Priority to CN200880003999A priority Critical patent/CN101802274A/zh
Priority to CA002675124A priority patent/CA2675124A1/en
Priority to US12/524,575 priority patent/US20100242833A1/en
Priority to EP08857491A priority patent/EP2218806A4/en
Publication of WO2009072378A1 publication Critical patent/WO2009072378A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)

Abstract

本発明は、大口径の厚いＡｌＮ結晶を安定して成長させることができるＡｌＮ結晶の成長方法を提供する。本発明のＡｌＮ結晶の成長方法は、１０００μｍ以上のパイプ径を有するマイクロパイプ４ｍｐの密度が０ｃｍ-2でありかつ１００μｍ以上１０００μｍ未満のパイプ径を有するマイクロパイプ４ｍｐの密度が０．１ｃｍ-2以下である主面４ｍを有するＳｉＣ基板４を準備する工程と、気相法により主面４ｍ上にＡｌＮ結晶５を成長させる工程と、を備える。
PCT/JP2008/070648 2007-12-04 2008-11-13 ＡｌＮ結晶およびその成長方法 WO2009072378A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880003999A CN101802274A (zh) 2007-12-04 2008-11-13 AlN晶体及其生长方法
CA002675124A CA2675124A1 (en) 2007-12-04 2008-11-13 A1n crystal and method of its growth
US12/524,575 US20100242833A1 (en) 2007-12-04 2008-11-13 AlN Crystal and Method of Its Growth
EP08857491A EP2218806A4 (en) 2007-12-04 2008-11-13 AlN-CRYSTAL AND METHOD FOR ITS BREEDING

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007313359A JP2009137777A (ja) 2007-12-04 2007-12-04 ＡｌＮ結晶およびその成長方法
JP2007-313359 2007-12-04

Publications (1)

Publication Number Publication Date
WO2009072378A1 true WO2009072378A1 (ja) 2009-06-11

Family

ID=40717559

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070648 WO2009072378A1 (ja) 2007-12-04 2008-11-13 ＡｌＮ結晶およびその成長方法

Country Status (7)

Country Link
US (1) US20100242833A1 (ja)
EP (1) EP2218806A4 (ja)
JP (1) JP2009137777A (ja)
KR (1) KR20100100582A (ja)
CN (1) CN101802274A (ja)
CA (1) CA2675124A1 (ja)
WO (1) WO2009072378A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111647945A (zh) * 2018-05-18 2020-09-11 北京华进创威电子有限公司 一种氮化铝晶体的制备方法
CN113363133A (zh) * 2020-03-05 2021-09-07 中国科学院苏州纳米技术与纳米仿生研究所 氮化铝-碳化硅复合膜及其制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053495A (ja) 1996-06-04 1998-02-24 Sumitomo Electric Ind Ltd 窒化物単結晶及びその製造方法
JP2000053498A (ja) * 1998-07-31 2000-02-22 Denso Corp 炭化珪素単結晶の製造方法
US6045612A (en) 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6296956B1 (en) 1996-10-17 2001-10-02 Cree, Inc. Bulk single crystals of aluminum nitride
US6770135B2 (en) 2001-12-24 2004-08-03 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP2004262709A (ja) * 2003-02-28 2004-09-24 Shikusuon:Kk ＳｉＣ単結晶の成長方法
JP2006240968A (ja) * 2005-03-07 2006-09-14 Sumitomo Electric Ind Ltd 単結晶成長方法、その方法により得られるＩＩＩ族窒化物単結晶およびＳｉＣ単結晶
JP2007039292A (ja) * 2005-08-04 2007-02-15 Tohoku Univ 窒化アルミニウム単結晶積層基板
JP2007137714A (ja) * 2005-11-17 2007-06-07 Fujikura Ltd 単結晶の製造方法及び単結晶の製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053495A (ja) 1996-06-04 1998-02-24 Sumitomo Electric Ind Ltd 窒化物単結晶及びその製造方法
US6296956B1 (en) 1996-10-17 2001-10-02 Cree, Inc. Bulk single crystals of aluminum nitride
US6045612A (en) 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
JP2000053498A (ja) * 1998-07-31 2000-02-22 Denso Corp 炭化珪素単結晶の製造方法
US6770135B2 (en) 2001-12-24 2004-08-03 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP2004262709A (ja) * 2003-02-28 2004-09-24 Shikusuon:Kk ＳｉＣ単結晶の成長方法
JP2006240968A (ja) * 2005-03-07 2006-09-14 Sumitomo Electric Ind Ltd 単結晶成長方法、その方法により得られるＩＩＩ族窒化物単結晶およびＳｉＣ単結晶
JP2007039292A (ja) * 2005-08-04 2007-02-15 Tohoku Univ 窒化アルミニウム単結晶積層基板
JP2007137714A (ja) * 2005-11-17 2007-06-07 Fujikura Ltd 単結晶の製造方法及び単結晶の製造装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. HARADA ET AL.: "Substrate-polarity dependence of A1N single-crystal films grown on 6H-SiC (0001) and (000-1) by molecular beam epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 42, no. 5A, May 2003 (2003-05-01), pages 2829 - 2833, XP001192272 *
See also references of EP2218806A4 *

Also Published As

Publication number Publication date
KR20100100582A (ko) 2010-09-15
EP2218806A4 (en) 2011-05-18
JP2009137777A (ja) 2009-06-25
CA2675124A1 (en) 2009-06-11
CN101802274A (zh) 2010-08-11
US20100242833A1 (en) 2010-09-30
EP2218806A1 (en) 2010-08-18

Similar Documents

Publication Publication Date Title
WO2006093707A3 (en) Single step, high temperature nucleation process for a lattice mismatched substrate
WO2009013914A1 (ja) ＳｉＣエピタキシャル基板およびその製造方法
WO2013061047A3 (en) Silicon carbide epitaxy
ATE373121T1 (de) Verfahren zur herstellung einer epitaktischen schicht
ATE524577T1 (de) Verfahren zur herstellung einer epitaktisch aufgewachsenen schicht
WO2008087791A1 (ja) Ｉｉｉ族窒化物結晶の製造方法、ｉｉｉ族窒化物結晶基板およびｉｉｉ族窒化物半導体デバイス
TW200605404A (en) Group III nitride crystal and its manufacturing method, group III nitride crystal substrate, and semiconductor device
WO2008143166A1 (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス
WO2006127157A3 (en) Method of transferring a thin crystalline semiconductor layer
EP2439316A4 (en) NITRIDE-SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREFOR
TW200833884A (en) Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
TW200734497A (en) Method for producing single-crystal ZnO by liquid phase epitaxy
DE60314648D1 (de) Einkristalliner diamant
RU2008152451A (ru) Кристалл sic диаметром 100 мм и способ его выращивания на внеосевой затравке
WO2009023100A3 (en) Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
WO2009072252A1 (ja) 気相成長用サセプタおよび気相成長装置
EP2524979A4 (en) A CRYSTAL SUBSTRATE, GROUP III ELEMENT NITRIDE RESIN RECORDED THEREWITH, AND METHOD FOR PRODUCING A GROUP III ELEMENT NITRIDE ROCK
CA2678488A1 (en) Method of producing a group iii nitride crystal
WO2003069027A3 (en) Energy efficient method for growing polycrystalline silicon
WO2006052995A3 (en) Method for producing crystals and screening crystallization conditions
CN103374750B (zh) 一种PVT法生长SiC晶体的籽晶固定方法
TW200721373A (en) Method for recycling an epitaxied donor wafer
WO2006086471A3 (en) A method to grow iii-nitride materials using no buffer layer
TW200723365A (en) Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
MY159243A (en) Single crystal diamond material

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880003999.8

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2675124

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 1020097014664

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2008857491

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12524575

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08857491

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE