JP2009501434A5 - - Google Patents

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Publication number
JP2009501434A5
JP2009501434A5 JP2008517091A JP2008517091A JP2009501434A5 JP 2009501434 A5 JP2009501434 A5 JP 2009501434A5 JP 2008517091 A JP2008517091 A JP 2008517091A JP 2008517091 A JP2008517091 A JP 2008517091A JP 2009501434 A5 JP2009501434 A5 JP 2009501434A5
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JP
Japan
Prior art keywords
single crystal
layer
semiconductor device
crystal layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008517091A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009501434A (ja
Filing date
Publication date
Priority claimed from US11/326,439 external-priority patent/US20060284167A1/en
Application filed filed Critical
Publication of JP2009501434A publication Critical patent/JP2009501434A/ja
Publication of JP2009501434A5 publication Critical patent/JP2009501434A5/ja
Pending legal-status Critical Current

Links

JP2008517091A 2005-06-17 2006-06-14 電力用途へのウェハーボンディングを介して得られた多層基板 Pending JP2009501434A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US69123505P 2005-06-17 2005-06-17
US11/326,439 US20060284167A1 (en) 2005-06-17 2006-01-06 Multilayered substrate obtained via wafer bonding for power applications
PCT/US2006/023244 WO2006138422A1 (en) 2005-06-17 2006-06-14 Multilayerd substrate obtained via wafer bonding for power applications

Publications (2)

Publication Number Publication Date
JP2009501434A JP2009501434A (ja) 2009-01-15
JP2009501434A5 true JP2009501434A5 (enExample) 2009-07-30

Family

ID=37057348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008517091A Pending JP2009501434A (ja) 2005-06-17 2006-06-14 電力用途へのウェハーボンディングを介して得られた多層基板

Country Status (4)

Country Link
US (1) US20060284167A1 (enExample)
JP (1) JP2009501434A (enExample)
TW (1) TW200704835A (enExample)
WO (1) WO2006138422A1 (enExample)

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US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
WO2008096194A1 (en) * 2007-02-08 2008-08-14 S.O.I.Tec Silicon On Insulator Technologies Method of fabrication of highly heat dissipative substrates
US8461626B2 (en) * 2007-07-09 2013-06-11 Freescale Semiconductor, Inc. Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
US8217498B2 (en) * 2007-10-18 2012-07-10 Corning Incorporated Gallium nitride semiconductor device on SOI and process for making same
US8143654B1 (en) * 2008-01-16 2012-03-27 Triquint Semiconductor, Inc. Monolithic microwave integrated circuit with diamond layer
WO2009128776A1 (en) * 2008-04-15 2009-10-22 Vallin Oerjan Hybrid wafers with hybrid-oriented layer
JP5617835B2 (ja) * 2009-02-24 2014-11-05 日本電気株式会社 半導体装置およびその製造方法
JP5404135B2 (ja) * 2009-03-31 2014-01-29 株式会社ブリヂストン 支持基板、貼り合わせ基板、支持基板の製造方法、及び貼り合わせ基板の製造方法
US8822306B2 (en) * 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8741739B2 (en) * 2012-01-03 2014-06-03 International Business Machines Corporation High resistivity silicon-on-insulator substrate and method of forming
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
TWI538018B (zh) * 2013-03-27 2016-06-11 Ngk Insulators Ltd Semiconductor substrate for composite substrate
CN114256068B (zh) * 2016-06-14 2025-08-01 克罗米斯有限公司 用于功率应用和射频应用的工程化衬底结构
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
WO2018186156A1 (ja) * 2017-04-07 2018-10-11 パナソニックＩｐマネジメント株式会社 グラファイト複合フィルム及びその製造方法
CN107742606B (zh) * 2017-10-30 2024-04-02 桂林电子科技大学 一种键合晶圆的结构及其制备方法
US11664357B2 (en) * 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
CN112368828A (zh) * 2018-07-03 2021-02-12 伊文萨思粘合技术公司 在微电子学中用于接合异种材料的技术
WO2020012986A1 (ja) * 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法
CN109273526B (zh) * 2018-10-24 2024-06-14 江西华讯方舟智能技术有限公司 一种高性能晶体管及其制造方法
CN111697071B (zh) * 2019-03-11 2023-11-24 比亚迪半导体股份有限公司 Mos场效应晶体管及制备的方法、电子设备
CN110491826B (zh) * 2019-07-31 2020-09-29 北京工业大学 化合物半导体单晶薄膜层的转移方法及单晶GaAs-OI复合晶圆的制备方法
KR20230003471A (ko) 2020-03-19 2023-01-06 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 결합된 구조체들을 위한 치수 보상 제어
KR20230149845A (ko) * 2021-03-01 2023-10-27 유미코아 화합물 반도체 층상 구조물 및 이의 제조 방법
CN114530421B (zh) * 2022-01-19 2025-07-01 中国科学院上海微系统与信息技术研究所 一种器件的制备方法及其结构

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US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
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US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
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JP2005129825A (ja) * 2003-10-27 2005-05-19 Sumitomo Chemical Co Ltd 化合物半導体基板の製造方法
US20050211982A1 (en) * 2004-03-23 2005-09-29 Ryan Lei Strained silicon with reduced roughness
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same

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