JP2005129825A5 - - Google Patents

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Publication number
JP2005129825A5
JP2005129825A5 JP2003365736A JP2003365736A JP2005129825A5 JP 2005129825 A5 JP2005129825 A5 JP 2005129825A5 JP 2003365736 A JP2003365736 A JP 2003365736A JP 2003365736 A JP2003365736 A JP 2003365736A JP 2005129825 A5 JP2005129825 A5 JP 2005129825A5
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
functional layer
manufacturing
original
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003365736A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005129825A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003365736A priority Critical patent/JP2005129825A/ja
Priority claimed from JP2003365736A external-priority patent/JP2005129825A/ja
Priority to TW093132261A priority patent/TW200520212A/zh
Priority to GB0609682A priority patent/GB2422489B8/en
Priority to US10/577,069 priority patent/US20070082467A1/en
Priority to CN2004800313161A priority patent/CN1871699B/zh
Priority to KR1020067010033A priority patent/KR20060101499A/ko
Priority to DE112004002033T priority patent/DE112004002033T5/de
Priority to PCT/JP2004/016186 priority patent/WO2005041287A1/ja
Publication of JP2005129825A publication Critical patent/JP2005129825A/ja
Publication of JP2005129825A5 publication Critical patent/JP2005129825A5/ja
Pending legal-status Critical Current

Links

JP2003365736A 2003-10-27 2003-10-27 化合物半導体基板の製造方法 Pending JP2005129825A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003365736A JP2005129825A (ja) 2003-10-27 2003-10-27 化合物半導体基板の製造方法
TW093132261A TW200520212A (en) 2003-10-27 2004-10-22 Method for manufacturing compound semiconductor substrate
PCT/JP2004/016186 WO2005041287A1 (ja) 2003-10-27 2004-10-25 化合物半導体基板の製造方法
CN2004800313161A CN1871699B (zh) 2003-10-27 2004-10-25 化合物半导体基板的制造方法
US10/577,069 US20070082467A1 (en) 2003-10-27 2004-10-25 Method for manufacturing compound semiconductor substrate
GB0609682A GB2422489B8 (en) 2003-10-27 2004-10-25 Method for manufacturing compound semiconductor substrate
KR1020067010033A KR20060101499A (ko) 2003-10-27 2004-10-25 화합물 반도체 기판의 제조 방법
DE112004002033T DE112004002033T5 (de) 2003-10-27 2004-10-25 Verfahren zur Herstellung eines Verbindungshalbleitersubstrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003365736A JP2005129825A (ja) 2003-10-27 2003-10-27 化合物半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JP2005129825A JP2005129825A (ja) 2005-05-19
JP2005129825A5 true JP2005129825A5 (enExample) 2006-11-02

Family

ID=34510191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003365736A Pending JP2005129825A (ja) 2003-10-27 2003-10-27 化合物半導体基板の製造方法

Country Status (8)

Country Link
US (1) US20070082467A1 (enExample)
JP (1) JP2005129825A (enExample)
KR (1) KR20060101499A (enExample)
CN (1) CN1871699B (enExample)
DE (1) DE112004002033T5 (enExample)
GB (1) GB2422489B8 (enExample)
TW (1) TW200520212A (enExample)
WO (1) WO2005041287A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284167A1 (en) * 2005-06-17 2006-12-21 Godfrey Augustine Multilayered substrate obtained via wafer bonding for power applications
US7799599B1 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Single crystal silicon carbide layers on diamond and associated methods
JP2009143756A (ja) * 2007-12-13 2009-07-02 Shin Etsu Chem Co Ltd ＧａＮ層含有積層基板及びその製造方法並びにデバイス
JP5441094B2 (ja) * 2008-10-01 2014-03-12 国立大学法人京都工芸繊維大学 半導体基板の製造方法および半導体基板
JP5906001B2 (ja) * 2009-03-10 2016-04-20 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
US8268707B2 (en) * 2009-06-22 2012-09-18 Raytheon Company Gallium nitride for liquid crystal electrodes
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5667109B2 (ja) * 2012-03-13 2015-02-12 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
JP6004343B2 (ja) * 2013-09-13 2016-10-05 日本電信電話株式会社 半導体装置の製造方法
JP2016031953A (ja) 2014-07-25 2016-03-07 株式会社タムラ製作所 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体
JP2016197737A (ja) * 2016-06-29 2016-11-24 株式会社タムラ製作所 半導体素子及びその製造方法、並びに結晶積層構造体
KR102143440B1 (ko) 2017-01-20 2020-08-11 한양대학교 산학협력단 3차원 뉴로모픽 소자 및 그 제조방법
EP3654366B1 (en) * 2017-07-14 2024-08-07 Shin-Etsu Chemical Co., Ltd. Highly heat conductive device substrate and method for producing same
JP6810017B2 (ja) * 2017-11-22 2021-01-06 日本電信電話株式会社 半導体ウエハの製造方法、ヘテロ接合バイポーラトランジスタの製造方法
JP7516786B2 (ja) * 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
US12387934B2 (en) 2020-04-13 2025-08-12 Mitsubishi Electric Corporation Method of manufacturing semiconductor element
GB202018616D0 (en) * 2020-11-26 2021-01-13 Element Six Tech Ltd A diamond assembly

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
JP2624119B2 (ja) * 1993-06-03 1997-06-25 日本電気株式会社 複合型半導体積層構造の製造方法
EP0651449B1 (en) * 1993-11-01 2002-02-13 Matsushita Electric Industrial Co., Ltd. Electronic component and method for producing the same
GB9401770D0 (en) * 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
JP2669368B2 (ja) * 1994-03-16 1997-10-27 日本電気株式会社 Ｓｉ基板上化合物半導体積層構造の製造方法
JPH11103125A (ja) * 1997-09-29 1999-04-13 Furukawa Electric Co Ltd:The 面発光型半導体レーザ装置の作製方法
US6287941B1 (en) * 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
JP4207781B2 (ja) * 2002-01-28 2009-01-14 日亜化学工業株式会社 支持基板を有する窒化物半導体素子及びその製造方法
US6830813B2 (en) * 2003-03-27 2004-12-14 Intel Corporation Stress-reducing structure for electronic devices
US7407863B2 (en) * 2003-10-07 2008-08-05 Board Of Trustees Of The University Of Illinois Adhesive bonding with low temperature grown amorphous or polycrystalline compound semiconductors
US7547925B2 (en) * 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices

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