JPH11329971A5 - - Google Patents

Info

Publication number
JPH11329971A5
JPH11329971A5 JP1998135776A JP13577698A JPH11329971A5 JP H11329971 A5 JPH11329971 A5 JP H11329971A5 JP 1998135776 A JP1998135776 A JP 1998135776A JP 13577698 A JP13577698 A JP 13577698A JP H11329971 A5 JPH11329971 A5 JP H11329971A5
Authority
JP
Japan
Prior art keywords
gan
substrate
crystals
crystal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998135776A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11329971A (ja
JP4390090B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13577698A priority Critical patent/JP4390090B2/ja
Priority claimed from JP13577698A external-priority patent/JP4390090B2/ja
Publication of JPH11329971A publication Critical patent/JPH11329971A/ja
Publication of JPH11329971A5 publication Critical patent/JPH11329971A5/ja
Application granted granted Critical
Publication of JP4390090B2 publication Critical patent/JP4390090B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP13577698A 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法 Expired - Fee Related JP4390090B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13577698A JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13577698A JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009101474A Division JP4964271B2 (ja) 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法

Publications (3)

Publication Number Publication Date
JPH11329971A JPH11329971A (ja) 1999-11-30
JPH11329971A5 true JPH11329971A5 (enExample) 2005-10-06
JP4390090B2 JP4390090B2 (ja) 2009-12-24

Family

ID=15159599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13577698A Expired - Fee Related JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JP4390090B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001185493A (ja) * 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
EP1265273A4 (en) 2000-03-14 2009-05-06 Toyoda Gosei Kk METHOD OF MANUFACTURING A III-NITRIDE COMPOUND SEMICONDUCTOR AND III-NITRIDE COMPOUND SEMICONDUCTOR ELEMENT
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
AU2004201000B2 (en) * 2000-06-19 2005-07-14 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP4747319B2 (ja) * 2004-03-23 2011-08-17 学校法人 名城大学 ヘテロエピタキシャル成長方法
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
US8772830B2 (en) * 2007-12-28 2014-07-08 Sumitomo Chemical Company, Limited Semiconductor wafer including lattice matched or pseudo-lattice matched buffer and GE layers, and electronic device
DE112014001272B4 (de) 2013-03-14 2023-03-30 Canon Anelva Corporation Schichtbildungsverfahren, Verfahren zum Herstellen einer lichtemittierenden Halbleitereinrichtung,lichtemittierende Halbleitereinrichtung und Beleuchtungseinrichtung

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