JP4390090B2 - ＧａＮ系結晶膜の製造方法 - Google Patents

ＧａＮ系結晶膜の製造方法 Download PDF

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Publication number
JP4390090B2
JP4390090B2 JP13577698A JP13577698A JP4390090B2 JP 4390090 B2 JP4390090 B2 JP 4390090B2 JP 13577698 A JP13577698 A JP 13577698A JP 13577698 A JP13577698 A JP 13577698A JP 4390090 B2 JP4390090 B2 JP 4390090B2
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gan
crystal
growth
film
substrate
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JP13577698A
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Japanese (ja)
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JPH11329971A5 (enExample
JPH11329971A (ja
Inventor
茂稔 伊藤
晋 近江
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Sharp Corp
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Sharp Corp
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Publication of JPH11329971A5 publication Critical patent/JPH11329971A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding

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  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
JP13577698A 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法 Expired - Fee Related JP4390090B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13577698A JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Applications Claiming Priority (1)

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JP13577698A JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Related Child Applications (1)

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JP2009101474A Division JP4964271B2 (ja) 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法

Publications (3)

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JPH11329971A JPH11329971A (ja) 1999-11-30
JPH11329971A5 JPH11329971A5 (enExample) 2005-10-06
JP4390090B2 true JP4390090B2 (ja) 2009-12-24

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JP13577698A Expired - Fee Related JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
CN1213462C (zh) 2000-03-14 2005-08-03 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
AU2004201000B2 (en) * 2000-06-19 2005-07-14 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP4747319B2 (ja) * 2004-03-23 2011-08-17 学校法人 名城大学 ヘテロエピタキシャル成長方法
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
CN101896998B (zh) * 2007-12-28 2013-03-27 住友化学株式会社 半导体基板、半导体基板的制造方法及电子器件
CN105190842B (zh) 2013-03-14 2017-07-28 佳能安内华股份有限公司 成膜方法、半导体发光元件的制造方法、半导体发光元件和照明装置

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JPH11329971A (ja) 1999-11-30

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