KR100941596B1 - 3-5족 화합물 반도체의 제조방법 및 반도체 소자 - Google Patents
3-5족 화합물 반도체의 제조방법 및 반도체 소자 Download PDFInfo
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- KR100941596B1 KR100941596B1 KR1020030001277A KR20030001277A KR100941596B1 KR 100941596 B1 KR100941596 B1 KR 100941596B1 KR 1020030001277 A KR1020030001277 A KR 1020030001277A KR 20030001277 A KR20030001277 A KR 20030001277A KR 100941596 B1 KR100941596 B1 KR 100941596B1
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- compound semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 150000001875 compounds Chemical class 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 44
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 210000002784 stomach Anatomy 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 229910002601 GaN Inorganic materials 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30—CRYSTAL GROWTH
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- Y10S438/975—Substrate or mask aligning feature
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
- c면을 표면으로 하는 화학식 InaGabAlcN의 3-5족 화합물 반도체(여기서, 0 ≤a ≤1, 0 ≤b ≤1, 0 ≤c ≤1, a + b + c =1)를 포함하는 하부 결정층 위에 스트라이프 마스크(stripe mask)를 형성하는 단계,화학식 InxGayAlzN의 3-5족 화합물 반도체 층(여기서, 0 ≤x ≤1, 0 ≤y ≤1, 0 ≤z ≤1, x + y + z =1)을 상기 하부 결정층 위에 성장시키는 단계, 및상기 성장을 상기 마스크 상에 전개시켜 매립 구조를 형성하는 단계를 포함하고,상기 스트라이프 마스크를, 스트라이프의 방향을 <1-100> 방향으로부터 0.095°이상 9.6°미만으로 회전시켜서 상기 하부 결정층 위에 형성시키는, 3-5족 화합물 반도체의 제조방법.
- 제1항에 있어서, 상기 3-5족 화합물 반도체 층이 유기 금속 기상 성장법 또는 하이드라이드 기상 성장법에 의해 성장되는, 3-5족 화합물 반도체의 제조방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002004434 | 2002-01-11 | ||
JPJP-P-2002-00004434 | 2002-01-11 |
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Publication Number | Publication Date |
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KR20030061317A KR20030061317A (ko) | 2003-07-18 |
KR100941596B1 true KR100941596B1 (ko) | 2010-02-11 |
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KR1020030001277A KR100941596B1 (ko) | 2002-01-11 | 2003-01-09 | 3-5족 화합물 반도체의 제조방법 및 반도체 소자 |
Country Status (4)
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US (1) | US6716724B1 (ko) |
KR (1) | KR100941596B1 (ko) |
DE (1) | DE10300053A1 (ko) |
TW (1) | TWI285918B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3966207B2 (ja) * | 2003-03-28 | 2007-08-29 | 豊田合成株式会社 | 半導体結晶の製造方法及び半導体発光素子 |
JP4276020B2 (ja) * | 2003-08-01 | 2009-06-10 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
KR100728533B1 (ko) * | 2004-11-23 | 2007-06-15 | 삼성코닝 주식회사 | 질화갈륨 단결정 후막 및 이의 제조방법 |
JP4441415B2 (ja) * | 2005-02-07 | 2010-03-31 | 国立大学法人東京工業大学 | 窒化アルミニウム単結晶積層基板 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
Citations (1)
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JP2000058981A (ja) * | 1998-08-13 | 2000-02-25 | Nec Corp | 窒化ガリウム系半導体発光素子及びその製造方法 |
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US6348096B1 (en) | 1997-03-13 | 2002-02-19 | Nec Corporation | Method for manufacturing group III-V compound semiconductors |
JP3577880B2 (ja) | 1997-03-26 | 2004-10-20 | 住友化学工業株式会社 | 3−5族化合物半導体の製造方法 |
CN1292458C (zh) * | 1997-04-11 | 2006-12-27 | 日亚化学工业株式会社 | 氮化物半导体的生长方法、氮化物半导体衬底及器件 |
JPH11135770A (ja) | 1997-09-01 | 1999-05-21 | Sumitomo Chem Co Ltd | 3−5族化合物半導体とその製造方法および半導体素子 |
US6368733B1 (en) * | 1998-08-06 | 2002-04-09 | Showa Denko K.K. | ELO semiconductor substrate |
JP4742399B2 (ja) | 1999-03-12 | 2011-08-10 | 住友化学株式会社 | 3−5族化合物半導体の製造方法 |
TW504754B (en) * | 2000-03-24 | 2002-10-01 | Sumitomo Chemical Co | Group III-V compound semiconductor and method of producing the same |
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- 2002-12-31 TW TW091138084A patent/TWI285918B/zh not_active IP Right Cessation
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- 2003-01-03 DE DE10300053A patent/DE10300053A1/de not_active Withdrawn
- 2003-01-07 US US10/337,287 patent/US6716724B1/en not_active Expired - Lifetime
- 2003-01-09 KR KR1020030001277A patent/KR100941596B1/ko active IP Right Grant
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JP2000058981A (ja) * | 1998-08-13 | 2000-02-25 | Nec Corp | 窒化ガリウム系半導体発光素子及びその製造方法 |
Also Published As
Publication number | Publication date |
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US6716724B1 (en) | 2004-04-06 |
TW200301927A (en) | 2003-07-16 |
KR20030061317A (ko) | 2003-07-18 |
TWI285918B (en) | 2007-08-21 |
DE10300053A1 (de) | 2003-07-24 |
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