WO2004025707A3 - ACTIVE ELECTRONIC DEVICES BASED ON GALLIUM NITRIDE AND ITS ALLOYS GROWN ON SILICON SUBSTRATES WITH BUFFER LAYERS OF SiCAIN - Google Patents

ACTIVE ELECTRONIC DEVICES BASED ON GALLIUM NITRIDE AND ITS ALLOYS GROWN ON SILICON SUBSTRATES WITH BUFFER LAYERS OF SiCAIN Download PDF

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Publication number
WO2004025707A3
WO2004025707A3 PCT/US2003/029166 US0329166W WO2004025707A3 WO 2004025707 A3 WO2004025707 A3 WO 2004025707A3 US 0329166 W US0329166 W US 0329166W WO 2004025707 A3 WO2004025707 A3 WO 2004025707A3
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WO
WIPO (PCT)
Prior art keywords
sicain
region
substrate
crystalline oxide
oxide interface
Prior art date
Application number
PCT/US2003/029166
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French (fr)
Other versions
WO2004025707A2 (en
Inventor
Ignatius S T Tsong
John Kouvetakis
John Tolle
Radek Roucka
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Univ Arizona
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Filing date
Publication date
Priority claimed from PCT/US2002/033134 external-priority patent/WO2003033781A1/en
Application filed by Univ Arizona filed Critical Univ Arizona
Priority to AU2003278828A priority Critical patent/AU2003278828A1/en
Publication of WO2004025707A2 publication Critical patent/WO2004025707A2/en
Publication of WO2004025707A3 publication Critical patent/WO2004025707A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A semiconductor structure integrates wide bandgap semiconductors with silicon. The semiconductor structure includes: a substrate; a SiCAIN region formed over the substrate, and an active region formed over the SiCAIN region. The substrate can comprise silicon, silicon carbide (SiC) or silicon germanium (SiGe). The active region can include a gallium nitride material region, such as GaN, AlGaN, InGaN or AlInGaN. It also can include AIN and InN region. The structure also can include a crystalline oxide interface formed between the substrate and the SiCAIN region. A preferred crystalline oxide interface is Si-Al-O-N. The active layer can be formed by known fabrication processes, including metal organic chemical vapor deposition or by atomic layer epitaxy. The crystalline oxide interface is normally formed by growing SiCAIN on Si(111) via a crystalline oxide interface, but can also be formed by metal organic chemical vapor deposition or by atomic layer epitaxy.
PCT/US2003/029166 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain WO2004025707A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003278828A AU2003278828A1 (en) 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41085902P 2002-09-13 2002-09-13
US60/410,859 2002-09-13
PCT/US2002/033134 WO2003033781A1 (en) 2001-10-16 2002-10-16 Low temperature epitaxial growth of quaternary wide bandgap semiconductors
USPCT/US02/33134 2002-10-16

Publications (2)

Publication Number Publication Date
WO2004025707A2 WO2004025707A2 (en) 2004-03-25
WO2004025707A3 true WO2004025707A3 (en) 2004-11-18

Family

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Family Applications (1)

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PCT/US2003/029166 WO2004025707A2 (en) 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain

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AU (1) AU2003278828A1 (en)
WO (1) WO2004025707A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060226442A1 (en) 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
EP2080228B1 (en) 2006-10-04 2020-12-02 LEONARDO S.p.A. Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
US8961687B2 (en) 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
US8575471B2 (en) 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8507365B2 (en) 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489128A (en) * 1981-06-30 1984-12-18 International Business Machines Corporation Structure containing epitaxial crystals on a substrate
JPH03108136A (en) * 1989-09-20 1991-05-08 Sekisui Chem Co Ltd Optical recording medium and its production
JPH0548145A (en) * 1991-08-07 1993-02-26 Toshiba Corp Optical semiconductor device and its manufacture
US5281831A (en) * 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
US5340647A (en) * 1988-11-04 1994-08-23 Fuji Photo Film Co., Ltd. Optomagnetic recording medium
US6124147A (en) * 1998-09-17 2000-09-26 Electronics And Telecommunications Research Institute Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489128A (en) * 1981-06-30 1984-12-18 International Business Machines Corporation Structure containing epitaxial crystals on a substrate
US5340647A (en) * 1988-11-04 1994-08-23 Fuji Photo Film Co., Ltd. Optomagnetic recording medium
JPH03108136A (en) * 1989-09-20 1991-05-08 Sekisui Chem Co Ltd Optical recording medium and its production
US5281831A (en) * 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device
JPH0548145A (en) * 1991-08-07 1993-02-26 Toshiba Corp Optical semiconductor device and its manufacture
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
US6124147A (en) * 1998-09-17 2000-09-26 Electronics And Telecommunications Research Institute Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment

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AU2003278828A1 (en) 2004-04-30
AU2003278828A8 (en) 2004-04-30
WO2004025707A2 (en) 2004-03-25

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