JP2008211250A5 - - Google Patents

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Publication number
JP2008211250A5
JP2008211250A5 JP2008129635A JP2008129635A JP2008211250A5 JP 2008211250 A5 JP2008211250 A5 JP 2008211250A5 JP 2008129635 A JP2008129635 A JP 2008129635A JP 2008129635 A JP2008129635 A JP 2008129635A JP 2008211250 A5 JP2008211250 A5 JP 2008211250A5
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JP
Japan
Prior art keywords
substrate
uneven surface
upper portion
crystal layer
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008129635A
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English (en)
Japanese (ja)
Other versions
JP4766071B2 (ja
JP2008211250A (ja
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Publication date
Application filed filed Critical
Priority to JP2008129635A priority Critical patent/JP4766071B2/ja
Priority claimed from JP2008129635A external-priority patent/JP4766071B2/ja
Publication of JP2008211250A publication Critical patent/JP2008211250A/ja
Publication of JP2008211250A5 publication Critical patent/JP2008211250A5/ja
Application granted granted Critical
Publication of JP4766071B2 publication Critical patent/JP4766071B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2008129635A 1999-03-17 2008-05-16 半導体基材及びその製造方法 Expired - Fee Related JP4766071B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008129635A JP4766071B2 (ja) 1999-03-17 2008-05-16 半導体基材及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1999072133 1999-03-17
JP7213399 1999-03-17
JP2008129635A JP4766071B2 (ja) 1999-03-17 2008-05-16 半導体基材及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003193119A Division JP2004006931A (ja) 1999-03-17 2003-07-07 半導体基材及びその作製方法

Publications (3)

Publication Number Publication Date
JP2008211250A JP2008211250A (ja) 2008-09-11
JP2008211250A5 true JP2008211250A5 (enExample) 2008-11-20
JP4766071B2 JP4766071B2 (ja) 2011-09-07

Family

ID=39787224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008129635A Expired - Fee Related JP4766071B2 (ja) 1999-03-17 2008-05-16 半導体基材及びその製造方法

Country Status (1)

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JP (1) JP4766071B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9691939B2 (en) 2011-10-10 2017-06-27 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
US10153396B2 (en) 2011-10-10 2018-12-11 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
US9397260B2 (en) 2011-10-10 2016-07-19 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
US10622515B2 (en) 2011-10-10 2020-04-14 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
US9806228B2 (en) 2011-10-10 2017-10-31 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
WO2013070369A2 (en) * 2011-10-10 2013-05-16 Sensor Electronic Technology, Inc. Patterned layer design for group iii nitride layer growth
KR101798062B1 (ko) * 2013-03-21 2017-11-16 삼성전자주식회사 광추출층, 광추출층을 지닌 발광 소자 및 그 제조 방법
JP2016062956A (ja) * 2014-09-16 2016-04-25 アイシン精機株式会社 基板及びその製造方法、半導体素子及びその製造方法、並びにレーザ加工装置
CN114725272B (zh) 2016-03-24 2025-03-11 索尼公司 显示装置、发光装置以及照明装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925217A (ja) * 1982-07-31 1984-02-09 Sony Corp 半導体装置の製法
JP2569099B2 (ja) * 1987-12-25 1997-01-08 株式会社日立製作所 エピタキシャル成長方法
JPH04137521A (ja) * 1990-09-28 1992-05-12 Toshiba Corp 半導体超格子及びその製造方法
JPH05267175A (ja) * 1992-03-20 1993-10-15 Sumitomo Metal Ind Ltd 化合物半導体基板
JP3805883B2 (ja) * 1997-12-26 2006-08-09 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体ウエハおよび窒化ガリウム系半導体素子、ならびにそれらの製造方法
JP3252779B2 (ja) * 1998-01-16 2002-02-04 松下電器産業株式会社 半導体発光素子及び半導体発光装置
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP3987660B2 (ja) * 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体構造とその製法および発光素子
JP3201475B2 (ja) * 1998-09-14 2001-08-20 松下電器産業株式会社 半導体装置およびその製造方法
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
JP3471685B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材及びその製造方法
JP3471700B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材

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