JP2010539732A5 - - Google Patents

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Publication number
JP2010539732A5
JP2010539732A5 JP2010526010A JP2010526010A JP2010539732A5 JP 2010539732 A5 JP2010539732 A5 JP 2010539732A5 JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010539732 A5 JP2010539732 A5 JP 2010539732A5
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JP
Japan
Prior art keywords
nitride
iii
semipolar
group iii
nonpolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526010A
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English (en)
Japanese (ja)
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JP2010539732A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/077072 external-priority patent/WO2009039408A1/en
Publication of JP2010539732A publication Critical patent/JP2010539732A/ja
Publication of JP2010539732A5 publication Critical patent/JP2010539732A5/ja
Pending legal-status Critical Current

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JP2010526010A 2007-09-19 2008-09-19 無極性および半極性の窒化物基板の面積を増加させる方法 Pending JP2010539732A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97365607P 2007-09-19 2007-09-19
PCT/US2008/077072 WO2009039408A1 (en) 2007-09-19 2008-09-19 Method for increasing the area of non-polar and semi-polar nitride substrates

Publications (2)

Publication Number Publication Date
JP2010539732A JP2010539732A (ja) 2010-12-16
JP2010539732A5 true JP2010539732A5 (enExample) 2012-11-01

Family

ID=40453547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526010A Pending JP2010539732A (ja) 2007-09-19 2008-09-19 無極性および半極性の窒化物基板の面積を増加させる方法

Country Status (4)

Country Link
US (2) US8080469B2 (enExample)
JP (1) JP2010539732A (enExample)
KR (1) KR20100067114A (enExample)
WO (1) WO2009039408A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
JP5743127B2 (ja) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
KR20100067114A (ko) * 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법
KR101502195B1 (ko) * 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
JP5573225B2 (ja) * 2010-02-26 2014-08-20 三菱化学株式会社 第１３族金属窒化物結晶の製造方法、該製造方法により得られる第１３族金属窒化物結晶および半導体デバイスの製造方法
WO2011109754A1 (en) * 2010-03-04 2011-09-09 The Regents Of The University Of California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction
JP2012136418A (ja) * 2010-12-01 2012-07-19 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体基板とその製造方法
JP5830973B2 (ja) * 2010-12-01 2015-12-09 三菱化学株式会社 ＧａＮ自立基板および半導体発光デバイスの製造方法

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US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US20010047751A1 (en) * 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP3761418B2 (ja) * 2001-05-10 2006-03-29 Ｈｏｙａ株式会社 化合物結晶およびその製造法
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP4031628B2 (ja) * 2001-10-03 2008-01-09 松下電器産業株式会社 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法
US20070128844A1 (en) * 2003-04-15 2007-06-07 Craven Michael D Non-polar (a1,b,in,ga)n quantum wells
JP5254521B2 (ja) * 2002-04-15 2013-08-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非極性窒化ガリウム薄膜における転位の低減
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
EP2315253A1 (en) * 2005-03-10 2011-04-27 The Regents of the University of California Technique for the growth of planar semi-polar gallium nitride
JP5743127B2 (ja) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
US7342642B2 (en) * 2005-06-20 2008-03-11 Asml Netherlands B.V. Pre-aligning a substrate in a lithographic apparatus, device manufacturing method, and device manufactured by the manufacturing method
JP5026271B2 (ja) * 2005-09-05 2012-09-12 パナソニック株式会社 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法
KR101510461B1 (ko) * 2006-01-20 2015-04-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 (Ａｌ,Ｉｎ,Ｇａ,Ｂ)Ｎ의 개선된 성장 방법
EP1984940A4 (en) * 2006-02-10 2010-11-10 Univ California METHOD FOR CONDUCTIVITY CONTROL OF (AL, IN, GA, B) N
WO2009035648A1 (en) * 2007-09-14 2009-03-19 Kyma Technologies, Inc. Non-polar and semi-polar gan substrates, devices, and methods for making them
KR20100067114A (ko) * 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법

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