JP2018170491A5 - - Google Patents

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Publication number
JP2018170491A5
JP2018170491A5 JP2017213440A JP2017213440A JP2018170491A5 JP 2018170491 A5 JP2018170491 A5 JP 2018170491A5 JP 2017213440 A JP2017213440 A JP 2017213440A JP 2017213440 A JP2017213440 A JP 2017213440A JP 2018170491 A5 JP2018170491 A5 JP 2018170491A5
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JP
Japan
Prior art keywords
substrate
providing
nitride layer
group iii
epitaxial
Prior art date
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Pending
Application number
JP2017213440A
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English (en)
Japanese (ja)
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JP2018170491A (ja
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Publication date
Priority claimed from US15/363,050 external-priority patent/US10249786B2/en
Application filed filed Critical
Publication of JP2018170491A publication Critical patent/JP2018170491A/ja
Publication of JP2018170491A5 publication Critical patent/JP2018170491A5/ja
Priority to JP2021179394A priority Critical patent/JP7216790B2/ja
Pending legal-status Critical Current

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JP2017213440A 2016-11-29 2017-11-06 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法 Pending JP2018170491A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021179394A JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/363,050 US10249786B2 (en) 2016-11-29 2016-11-29 Thin film and substrate-removed group III-nitride based devices and method
US15/363,050 2016-11-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021179394A Division JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Publications (2)

Publication Number Publication Date
JP2018170491A JP2018170491A (ja) 2018-11-01
JP2018170491A5 true JP2018170491A5 (enExample) 2021-03-11

Family

ID=60450452

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JP2017213440A Pending JP2018170491A (ja) 2016-11-29 2017-11-06 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
JP2021179394A Active JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

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JP2021179394A Active JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Country Status (3)

Country Link
US (1) US10249786B2 (enExample)
EP (1) EP3327795B1 (enExample)
JP (2) JP2018170491A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
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FR3061357B1 (fr) * 2016-12-27 2019-05-24 Aledia Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance
EP3852151A4 (en) 2018-09-12 2022-06-15 NS Materials Inc. INFRARED SENSOR AND METHOD FOR PRODUCTION
US10896861B2 (en) * 2019-04-22 2021-01-19 Raytheon Company Heterogeneous multi-layer MMIC assembly

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US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
DE60230538D1 (de) 2001-11-20 2009-02-05 Rensselaer Polytech Inst Verfahren zum polieren der oberfläche eines substrats
JP2004200347A (ja) 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 高放熱性能を持つ発光ダイオード
JP2006511938A (ja) * 2002-12-20 2006-04-06 アギア システムズ インコーポレーテッド 銅相互接続構造に結合するための構造および方法
TWI288486B (en) 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same
US20060288929A1 (en) 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
JP5003033B2 (ja) * 2006-06-30 2012-08-15 住友電気工業株式会社 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
WO2008060505A1 (en) 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US7732301B1 (en) * 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
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JP2009124160A (ja) * 2008-12-26 2009-06-04 Sumitomo Electric Ind Ltd 窒化物結晶およびエピ層付窒化物結晶基板の製造方法
JP5806734B2 (ja) * 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
KR20120038293A (ko) * 2010-10-13 2012-04-23 삼성코닝정밀소재 주식회사 반도체 기판 제조방법
WO2012056928A1 (ja) 2010-10-29 2012-05-03 株式会社トクヤマ 光学素子の製造方法
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US8866149B2 (en) * 2012-02-17 2014-10-21 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
JP6232853B2 (ja) 2012-10-12 2017-11-22 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
US9136337B2 (en) * 2012-10-12 2015-09-15 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
JP2016511938A (ja) 2013-01-29 2016-04-21 ヘクサテック，インコーポレイテッド 単結晶窒化アルミニウム基板を組み込む光電子デバイス
CN104995713A (zh) * 2013-02-18 2015-10-21 住友电气工业株式会社 Iii族氮化物复合衬底及其制造方法,层叠的iii族氮化物复合衬底,以及iii族氮化物半导体器件及其制造方法
JP2015179734A (ja) 2014-03-19 2015-10-08 旭化成株式会社 半導体発光装置の製造方法および半導体発光装置

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