JP2020519026A5 - - Google Patents
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- JP2020519026A5 JP2020519026A5 JP2019560276A JP2019560276A JP2020519026A5 JP 2020519026 A5 JP2020519026 A5 JP 2020519026A5 JP 2019560276 A JP2019560276 A JP 2019560276A JP 2019560276 A JP2019560276 A JP 2019560276A JP 2020519026 A5 JP2020519026 A5 JP 2020519026A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor layers
- iii
- nitride semiconductor
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762502205P | 2017-05-05 | 2017-05-05 | |
| US62/502,205 | 2017-05-05 | ||
| PCT/US2018/031393 WO2018204916A1 (en) | 2017-05-05 | 2018-05-07 | Method of removing a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020519026A JP2020519026A (ja) | 2020-06-25 |
| JP2020519026A5 true JP2020519026A5 (enExample) | 2020-08-06 |
| JP7158745B2 JP7158745B2 (ja) | 2022-10-24 |
Family
ID=64016802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019560276A Active JP7158745B2 (ja) | 2017-05-05 | 2018-05-07 | 基板を除去する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12046695B2 (enExample) |
| EP (2) | EP4411843A3 (enExample) |
| JP (1) | JP7158745B2 (enExample) |
| CN (1) | CN110603651B (enExample) |
| WO (1) | WO2018204916A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12087577B2 (en) | 2018-05-17 | 2024-09-10 | The Regents Of The University Of California | Method for dividing a bar of one or more devices |
| US12051765B2 (en) * | 2019-01-16 | 2024-07-30 | The Regents Of The Univerity Of California | Method for removal of devices using a trench |
| JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して１つ以上の素子のバーを除去するための方法 |
| EP3939069A4 (en) * | 2019-03-13 | 2022-05-04 | The Regents of the University of California | SUBSTRATE FOR REMOVAL OF DEVICES WITH VOIDS |
| JP7378239B2 (ja) * | 2019-07-30 | 2023-11-13 | 京セラ株式会社 | 積層体、窒化物半導体層の製造方法 |
| EP4136678A4 (en) * | 2020-04-17 | 2024-08-07 | The Regents of University of California | Method for removing a device using an epitaxial lateral overgrowth technique |
| US20230238477A1 (en) * | 2020-06-19 | 2023-07-27 | The Regents Of The University Of California | Transfer process to realize semiconductor devices |
| KR102903451B1 (ko) * | 2020-10-23 | 2025-12-22 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 재성장을 통해 제작된 소형 발광 다이오드 |
| US20230402564A1 (en) * | 2020-10-28 | 2023-12-14 | The Regents Of The University Of California | Method of transferring a pattern to an epitaxial layer of a light emitting device |
| DE102020130017A1 (de) * | 2020-11-13 | 2022-05-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
| EP4283803A4 (en) * | 2021-01-22 | 2024-08-28 | Kyocera Corporation | LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LASER ELEMENT AND METHOD AND DEVICE FOR PRODUCING SAME |
| DE102021103484A1 (de) * | 2021-02-15 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| JP7638380B2 (ja) * | 2021-07-21 | 2025-03-03 | 京セラ株式会社 | 発光デバイス、表示デバイス、電子機器、並びに発光デバイスの製造方法および製造装置 |
| WO2024211817A1 (en) | 2023-04-06 | 2024-10-10 | Slt Technologies, Inc. | High quality group-iii metal nitride crystals and methods of making |
| WO2025176467A1 (en) * | 2024-02-21 | 2025-08-28 | Ams-Osram International Gmbh | Method for manufacturing a plurality of semiconductor chips |
| WO2025195980A1 (en) * | 2024-03-18 | 2025-09-25 | Ams-Osram International Gmbh | Elo-based optoelectronic device and method of manufacturing an optoelectronic device |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5641818Y2 (enExample) | 1978-10-20 | 1981-09-30 | ||
| DE69728022T2 (de) | 1996-12-18 | 2004-08-12 | Canon K.K. | Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht |
| FR2769924B1 (fr) | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
| US6252261B1 (en) | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP2000349338A (ja) * | 1998-09-30 | 2000-12-15 | Nec Corp | ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法 |
| US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
| JP2002334842A (ja) * | 2001-05-10 | 2002-11-22 | Sony Corp | 窒化物半導体装置の製造方法 |
| US7351300B2 (en) | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
| US6815241B2 (en) | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US6855571B1 (en) | 2003-02-14 | 2005-02-15 | Matsushita Electric Industrial Co., Ltd. | Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor |
| JP5194334B2 (ja) | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体デバイスの製造方法 |
| JP4571476B2 (ja) * | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
| JP4986406B2 (ja) | 2005-03-31 | 2012-07-25 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| WO2008073414A1 (en) | 2006-12-12 | 2008-06-19 | The Regents Of The University Of California | Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates |
| EP2111634A4 (en) * | 2007-02-12 | 2014-01-08 | Univ California | AL (X) GA (1-X) N-FAIR-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LED DIODES |
| US8085825B2 (en) | 2007-03-06 | 2011-12-27 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
| JP2008252069A (ja) * | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
| US8574968B2 (en) * | 2007-07-26 | 2013-11-05 | Soitec | Epitaxial methods and templates grown by the methods |
| EP2218098B1 (en) | 2007-11-02 | 2018-08-15 | President and Fellows of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
| JPWO2009118979A1 (ja) * | 2008-03-28 | 2011-07-21 | パナソニック株式会社 | 窒化物半導体発光装置 |
| JP5180050B2 (ja) | 2008-12-17 | 2013-04-10 | スタンレー電気株式会社 | 半導体素子の製造方法 |
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
| US20120309269A1 (en) | 2011-06-01 | 2012-12-06 | King Abdulaziz City For Science And Technology | Low-temperature methods for spontaneous material spalling |
| JP5561489B2 (ja) | 2011-09-02 | 2014-07-30 | 信越半導体株式会社 | ＧａＮ自立基板の製造方法 |
| WO2013141561A1 (ko) | 2012-03-19 | 2013-09-26 | 서울옵토디바이스주식회사 | 에피층과 성장 기판 분리 방법 및 이를 이용한 반도체 소자 |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| JP2013251394A (ja) | 2012-05-31 | 2013-12-12 | Hitachi Ltd | 半導体レーザ装置 |
| DE102012217644A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| WO2014061906A1 (ko) * | 2012-10-15 | 2014-04-24 | 서울바이오시스 주식회사 | 성장 기판 분리 방법, 발광 다이오드 제조 방법 및 그것에 의해 제조된 발광 다이오드 |
| US9166372B1 (en) * | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
| US10186629B2 (en) | 2013-08-26 | 2019-01-22 | The Regents Of The University Of Michigan | Thin film lift-off via combination of epitaxial lift-off and spalling |
| KR20150072066A (ko) | 2013-12-19 | 2015-06-29 | 서울바이오시스 주식회사 | 반도체 성장용 템플릿, 성장 기판 분리 방법 및 이를 이용한 발광소자 제조 방법 |
| US9245747B2 (en) * | 2014-05-01 | 2016-01-26 | International Business Machines Corporation | Engineered base substrates for releasing III-V epitaxy through spalling |
| US9490119B2 (en) * | 2014-05-21 | 2016-11-08 | Palo Alto Research Center Incorporated | Fabrication of thin-film devices using selective area epitaxy |
| US20170236807A1 (en) | 2014-10-28 | 2017-08-17 | The Regents Of The University Of California | Iii-v micro-led arrays and methods for preparing the same |
| JP6245239B2 (ja) | 2015-09-11 | 2017-12-13 | 日亜化学工業株式会社 | 半導体レーザ素子の製造方法 |
| US11508620B2 (en) | 2017-09-15 | 2022-11-22 | The Regents Of The University Of California | Method of removing a substrate with a cleaving technique |
| US20210242086A1 (en) | 2018-05-30 | 2021-08-05 | The Regents Of The University Of California | Method of removing semiconducting layers from a semiconducting substrate |
| TWI834979B (zh) * | 2020-06-22 | 2024-03-11 | 日商京瓷股份有限公司 | 半導體裝置之製造方法、半導體基板及電子機器 |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
-
2018
- 2018-05-07 EP EP24169398.5A patent/EP4411843A3/en active Pending
- 2018-05-07 WO PCT/US2018/031393 patent/WO2018204916A1/en not_active Ceased
- 2018-05-07 EP EP18794585.2A patent/EP3619748B1/en active Active
- 2018-05-07 CN CN201880029662.8A patent/CN110603651B/zh active Active
- 2018-05-07 US US16/608,071 patent/US12046695B2/en active Active
- 2018-05-07 JP JP2019560276A patent/JP7158745B2/ja active Active
-
2022
- 2022-07-12 US US17/862,744 patent/US20220352409A1/en not_active Abandoned
- 2022-07-12 US US17/863,084 patent/US20220352410A1/en not_active Abandoned
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