JP6957982B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP6957982B2 JP6957982B2 JP2017105731A JP2017105731A JP6957982B2 JP 6957982 B2 JP6957982 B2 JP 6957982B2 JP 2017105731 A JP2017105731 A JP 2017105731A JP 2017105731 A JP2017105731 A JP 2017105731A JP 6957982 B2 JP6957982 B2 JP 6957982B2
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- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Description
Claims (4)
- 半導体基板と、
前記半導体基板の上に形成されたバッファ層と、
前記バッファ層の上に形成されたGaNチャネル層と、
前記GaNチャネル層の上に形成されたAlGaN電子走行層と、
前記AlGaN電子走行層の上に形成され、窒素極性であり、複数のリセスが形成されたGaNキャップ層と、
前記複数のリセスにそれぞれ形成され、前記AlGaN電子走行層に直接接し、前記GaNキャップ層から離間しているゲート電極、ソース電極、及びドレイン電極とを備えることを特徴とする半導体装置。 - 半導体基板の上に順にバッファ層、GaNチャネル層、AlGaN電子走行層、及び窒素極性のGaNキャップ層を形成する工程と、
前記AlGaN電子走行層をエッチストップ層として用いて温度100℃以上のKOHにより前記GaNキャップ層をエッチングして複数のリセスを形成する工程と、
前記複数のリセスにそれぞれドレイン電極、ソース電極、ゲート電極を形成する工程とを備え、
前記ゲート電極、前記ソース電極、及び前記ドレイン電極は、前記AlGaN電子走行層に直接接し、前記GaNキャップ層から離間していることを特徴とする半導体装置の製造方法。 - 前記KOHにより前記GaNキャップ層をエッチングする際のマスクとしてSiN、SiO、又はTiWを用いることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記バッファ層、前記GaNチャネル層、前記AlGaN電子走行層、及び前記GaNキャップ層の成膜方法として、MBE、スパッタ、プラズマCVD、蒸着法の何れか1つ又は複数を用いることを特徴とする請求項2又は3に記載の半導体装置の製造方法。
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JP2017105731A JP6957982B2 (ja) | 2017-05-29 | 2017-05-29 | 半導体装置及びその製造方法 |
US15/897,180 US20180342588A1 (en) | 2017-05-29 | 2018-02-15 | Semiconductor device and method for manufacturing the same |
US16/547,461 US10777643B2 (en) | 2017-05-29 | 2019-08-21 | Method for manufacturing semiconductor device |
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JP2017105731A JP6957982B2 (ja) | 2017-05-29 | 2017-05-29 | 半導体装置及びその製造方法 |
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JP2018200981A JP2018200981A (ja) | 2018-12-20 |
JP6957982B2 true JP6957982B2 (ja) | 2021-11-02 |
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US10658190B2 (en) * | 2018-09-24 | 2020-05-19 | International Business Machines Corporation | Extreme ultraviolet lithography patterning with directional deposition |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3933592B2 (ja) * | 2002-03-26 | 2007-06-20 | 三洋電機株式会社 | 窒化物系半導体素子 |
US6986693B2 (en) | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
US7700973B2 (en) * | 2003-10-10 | 2010-04-20 | The Regents Of The University Of California | GaN/AlGaN/GaN dispersion-free high electron mobility transistors |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
JPWO2006013698A1 (ja) | 2004-08-02 | 2008-05-01 | 日本電気株式会社 | 窒化物半導体素子、及びその製造方法 |
JP4869576B2 (ja) * | 2004-09-29 | 2012-02-08 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
US7429534B2 (en) * | 2005-02-22 | 2008-09-30 | Sensor Electronic Technology, Inc. | Etching a nitride-based heterostructure |
JP2008034411A (ja) * | 2006-07-26 | 2008-02-14 | Toshiba Corp | 窒化物半導体素子 |
KR101452550B1 (ko) * | 2007-07-19 | 2014-10-21 | 미쓰비시 가가꾸 가부시키가이샤 | Ⅲ 족 질화물 반도체 기판 및 그 세정 방법 |
JP5045418B2 (ja) * | 2007-11-28 | 2012-10-10 | 三菱化学株式会社 | GaN系LED素子、GaN系LED素子の製造方法およびGaN系LED素子製造用テンプレート |
JP4821778B2 (ja) * | 2008-01-11 | 2011-11-24 | 沖電気工業株式会社 | 光電気化学エッチング装置 |
US8343824B2 (en) * | 2008-04-29 | 2013-01-01 | International Rectifier Corporation | Gallium nitride material processing and related device structures |
JP5300514B2 (ja) * | 2009-02-05 | 2013-09-25 | 三菱電機株式会社 | 半導体装置 |
JP5396911B2 (ja) | 2009-02-25 | 2014-01-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
WO2012172753A1 (ja) * | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 半導体装置及びその製造方法 |
WO2013008422A1 (ja) | 2011-07-12 | 2013-01-17 | パナソニック株式会社 | 窒化物半導体装置およびその製造方法 |
KR101259126B1 (ko) * | 2011-07-25 | 2013-04-26 | 엘지전자 주식회사 | 질화물계 반도체 이종접합 반도체 소자 및 그 제조방법 |
JP2013041986A (ja) * | 2011-08-16 | 2013-02-28 | Advanced Power Device Research Association | GaN系半導体装置 |
JP2013197315A (ja) * | 2012-03-19 | 2013-09-30 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
US9123791B2 (en) * | 2014-01-09 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device and method |
JP6418032B2 (ja) * | 2015-03-27 | 2018-11-07 | 富士通株式会社 | 半導体装置 |
US9614069B1 (en) * | 2015-04-10 | 2017-04-04 | Cambridge Electronics, Inc. | III-Nitride semiconductors with recess regions and methods of manufacture |
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2017
- 2017-05-29 JP JP2017105731A patent/JP6957982B2/ja active Active
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2018
- 2018-02-15 US US15/897,180 patent/US20180342588A1/en not_active Abandoned
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2019
- 2019-08-21 US US16/547,461 patent/US10777643B2/en active Active
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Publication number | Publication date |
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US20190378897A1 (en) | 2019-12-12 |
JP2018200981A (ja) | 2018-12-20 |
US10777643B2 (en) | 2020-09-15 |
US20180342588A1 (en) | 2018-11-29 |
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