JP7158745B2 - 基板を除去する方法 - Google Patents

基板を除去する方法 Download PDF

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Publication number
JP7158745B2
JP7158745B2 JP2019560276A JP2019560276A JP7158745B2 JP 7158745 B2 JP7158745 B2 JP 7158745B2 JP 2019560276 A JP2019560276 A JP 2019560276A JP 2019560276 A JP2019560276 A JP 2019560276A JP 7158745 B2 JP7158745 B2 JP 7158745B2
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nitride semiconductor
substrate
gan
layer
iii
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JP2020519026A5 (enExample
JP2020519026A (ja
Inventor
剛 神川
スリニヴァス ガンドロトゥーラ，
ホンジャン リー，
ダニエル エー． コーエン，
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University of California San Diego UCSD
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University of California San Diego UCSD
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10P72/74—
    • H10W90/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/9202—Forming additional connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H10P14/276—
    • H10P14/2908—
    • H10P14/3216—
    • H10P14/3416—
    • H10P72/7412—
    • H10P72/7426—
    • H10P72/7432—
    • H10P72/744—
    • H10W72/01371—
    • H10W72/01938—
    • H10W72/0198—
    • H10W72/073—
    • H10W72/07307—
    • H10W72/07311—
    • H10W72/07331—
    • H10W72/07332—
    • H10W72/07336—
    • H10W72/352—
    • H10W72/59—
    • H10W72/90—
    • H10W72/923—
    • H10W72/934—
    • H10W72/944—
    • H10W72/952—
    • H10W72/953—
    • H10W80/016—
    • H10W80/211—
    • H10W80/312—
    • H10W80/334—
    • H10W90/734—
    • H10W90/736—
    • H10W90/794—
    • H10W90/796—
    • H10W99/00—

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2019560276A 2017-05-05 2018-05-07 基板を除去する方法 Active JP7158745B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762502205P 2017-05-05 2017-05-05
US62/502,205 2017-05-05
PCT/US2018/031393 WO2018204916A1 (en) 2017-05-05 2018-05-07 Method of removing a substrate

Publications (3)

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JP2020519026A JP2020519026A (ja) 2020-06-25
JP2020519026A5 JP2020519026A5 (enExample) 2020-08-06
JP7158745B2 true JP7158745B2 (ja) 2022-10-24

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JP2019560276A Active JP7158745B2 (ja) 2017-05-05 2018-05-07 基板を除去する方法

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US (3) US12046695B2 (enExample)
EP (2) EP4411843A3 (enExample)
JP (1) JP7158745B2 (enExample)
CN (1) CN110603651B (enExample)
WO (1) WO2018204916A1 (enExample)

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JP2022523861A (ja) * 2019-03-12 2022-04-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 支持板を使用して１つ以上の素子のバーを除去するための方法
EP3939069A4 (en) * 2019-03-13 2022-05-04 The Regents of the University of California SUBSTRATE FOR REMOVAL OF DEVICES WITH VOIDS
JP7378239B2 (ja) * 2019-07-30 2023-11-13 京セラ株式会社 積層体、窒化物半導体層の製造方法
EP4136678A4 (en) * 2020-04-17 2024-08-07 The Regents of University of California Method for removing a device using an epitaxial lateral overgrowth technique
US20230238477A1 (en) * 2020-06-19 2023-07-27 The Regents Of The University Of California Transfer process to realize semiconductor devices
KR102903451B1 (ko) * 2020-10-23 2025-12-22 더 리전츠 오브 더 유니버시티 오브 캘리포니아 재성장을 통해 제작된 소형 발광 다이오드
US20230402564A1 (en) * 2020-10-28 2023-12-14 The Regents Of The University Of California Method of transferring a pattern to an epitaxial layer of a light emitting device
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WO2024211817A1 (en) 2023-04-06 2024-10-10 Slt Technologies, Inc. High quality group-iii metal nitride crystals and methods of making
WO2025176467A1 (en) * 2024-02-21 2025-08-28 Ams-Osram International Gmbh Method for manufacturing a plurality of semiconductor chips
WO2025195980A1 (en) * 2024-03-18 2025-09-25 Ams-Osram International Gmbh Elo-based optoelectronic device and method of manufacturing an optoelectronic device

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EP3619748A1 (en) 2020-03-11
US20220352409A1 (en) 2022-11-03
US20220352410A1 (en) 2022-11-03
EP3619748B1 (en) 2024-04-17
US12046695B2 (en) 2024-07-23
EP4411843A3 (en) 2024-10-30
US20200194615A1 (en) 2020-06-18
EP3619748A4 (en) 2021-01-06
CN110603651A (zh) 2019-12-20
WO2018204916A1 (en) 2018-11-08
CN110603651B (zh) 2023-07-18
EP4411843A2 (en) 2024-08-07
JP2020519026A (ja) 2020-06-25

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