DE60230538D1 - Verfahren zum polieren der oberfläche eines substrats - Google Patents
Verfahren zum polieren der oberfläche eines substratsInfo
- Publication number
- DE60230538D1 DE60230538D1 DE60230538T DE60230538T DE60230538D1 DE 60230538 D1 DE60230538 D1 DE 60230538D1 DE 60230538 T DE60230538 T DE 60230538T DE 60230538 T DE60230538 T DE 60230538T DE 60230538 D1 DE60230538 D1 DE 60230538D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- polishing
- cmp
- improved
- cmp process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 6
- 238000005498 polishing Methods 0.000 title abstract 3
- 239000004480 active ingredient Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33186801P | 2001-11-20 | 2001-11-20 | |
PCT/US2002/037135 WO2003043780A2 (en) | 2001-11-20 | 2002-11-20 | Method for polishing a substrate surface |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60230538D1 true DE60230538D1 (de) | 2009-02-05 |
Family
ID=23295726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60230538T Expired - Lifetime DE60230538D1 (de) | 2001-11-20 | 2002-11-20 | Verfahren zum polieren der oberfläche eines substrats |
Country Status (9)
Country | Link |
---|---|
US (2) | US7037838B2 (de) |
EP (1) | EP1446263B1 (de) |
JP (2) | JP2005510072A (de) |
AT (1) | ATE418420T1 (de) |
AU (1) | AU2002365979A1 (de) |
CA (1) | CA2467806C (de) |
DE (1) | DE60230538D1 (de) |
HK (1) | HK1068840A1 (de) |
WO (1) | WO2003043780A2 (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Iii族窒化物結晶の研磨方法およびiii族窒化物結晶および半導体デバイス |
US8025808B2 (en) * | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
JP4752214B2 (ja) * | 2004-08-20 | 2011-08-17 | 住友電気工業株式会社 | エピタキシャル層形成用AlN結晶の表面処理方法 |
JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物結晶の表面処理方法 |
JP5283502B2 (ja) * | 2005-05-11 | 2013-09-04 | ノース・キャロライナ・ステイト・ユニヴァーシティ | 極性が制御されたiii族窒化物薄膜及びその製法 |
US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
US7670902B2 (en) * | 2005-07-26 | 2010-03-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for landing polysilicon contact |
WO2007062250A2 (en) | 2005-11-28 | 2007-05-31 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
EP1954857B1 (de) * | 2005-12-02 | 2018-09-26 | Crystal Is, Inc. | Dotierte aluminiumnitridkristalle und herstellungsverfahren dafür |
JP5479888B2 (ja) * | 2006-03-30 | 2014-04-23 | クリスタル アイエス インコーポレイテッド | 窒化アルミニウムバルク結晶を制御可能にドーピングする方法 |
US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US20100062601A1 (en) * | 2006-11-15 | 2010-03-11 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
TWI386468B (zh) * | 2006-12-20 | 2013-02-21 | Saint Gobain Ceramics | 加工無機非金屬工件之方法 |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
US8210904B2 (en) * | 2008-04-29 | 2012-07-03 | International Business Machines Corporation | Slurryless mechanical planarization for substrate reclamation |
US7915178B2 (en) | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
EP2595940B1 (de) | 2010-07-20 | 2019-11-13 | Hexatech Inc. | Polykristalliner aluminiumnitridkugel und verfahren zur herstellung eines polykristallinen aluminiumnitridmaterials |
US9299594B2 (en) | 2010-07-27 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate bonding system and method of modifying the same |
JP5319628B2 (ja) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
JP2011049610A (ja) * | 2010-12-10 | 2011-03-10 | Sumitomo Electric Ind Ltd | AlN結晶の表面処理方法、AlN結晶基板、エピタキシャル層付AlN結晶基板および半導体デバイス |
WO2012082729A1 (en) | 2010-12-14 | 2012-06-21 | Hexatech, Inc. | Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
CN105144345B (zh) | 2013-03-15 | 2018-05-08 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
WO2016039116A1 (ja) * | 2014-09-11 | 2016-03-17 | 株式会社トクヤマ | 窒化アルミニウム単結晶基板の洗浄方法および積層体 |
DE112015002906B4 (de) | 2015-02-02 | 2022-12-22 | Fuji Electric Co., Ltd. | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung |
US10249786B2 (en) | 2016-11-29 | 2019-04-02 | Palo Alto Research Center Incorporated | Thin film and substrate-removed group III-nitride based devices and method |
DE112018005414T5 (de) | 2017-11-10 | 2020-07-09 | Crystal Is, Inc. | Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung |
CN114667371A (zh) | 2019-08-15 | 2022-06-24 | 晶化成半导体公司 | 氮化铝晶体的扩径 |
KR20230044296A (ko) * | 2020-07-29 | 2023-04-03 | 버슘머트리얼즈 유에스, 엘엘씨 | 구리 및 실리콘 관통 전극(tsv)의 화학적 기계적 평탄화(cmp)를 위한 패드-인-어-보틀(pib) 기술 |
US20240293912A1 (en) * | 2021-06-30 | 2024-09-05 | Kyocera Corporation | Manufacturing method for manufacturing substrate of nitride crystal of group 13 element in periodic table |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629023A (en) * | 1968-07-17 | 1971-12-21 | Minnesota Mining & Mfg | METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM |
JPH04355920A (ja) * | 1991-01-31 | 1992-12-09 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板およびその製造方法 |
JP2986948B2 (ja) * | 1991-04-15 | 1999-12-06 | 株式会社東芝 | AlN回路基板 |
JP3585941B2 (ja) * | 1993-06-14 | 2004-11-10 | イビデン株式会社 | セラミックス基板の表面処理方法 |
DE69526129T2 (de) * | 1994-05-23 | 2002-08-22 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
US5597443A (en) | 1994-08-31 | 1997-01-28 | Texas Instruments Incorporated | Method and system for chemical mechanical polishing of semiconductor wafer |
US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
US5534462A (en) * | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
US5652176A (en) * | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
US5645682A (en) * | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
JP3450683B2 (ja) * | 1997-01-10 | 2003-09-29 | 株式会社東芝 | 半導体被処理面の調製方法 |
TW426556B (en) * | 1997-01-24 | 2001-03-21 | United Microelectronics Corp | Method of cleaning slurry remnants left on a chemical-mechanical polish machine |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
WO2001058644A1 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
EP1129816A3 (de) * | 2000-03-02 | 2003-01-15 | Corning Incorporated | Polierverfahren für Keramiken |
US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
JP3787485B2 (ja) * | 2000-06-30 | 2006-06-21 | 信越半導体株式会社 | 薄板の加工方法 |
-
2002
- 2002-11-20 JP JP2003545445A patent/JP2005510072A/ja active Pending
- 2002-11-20 CA CA2467806A patent/CA2467806C/en not_active Expired - Lifetime
- 2002-11-20 DE DE60230538T patent/DE60230538D1/de not_active Expired - Lifetime
- 2002-11-20 EP EP02803675A patent/EP1446263B1/de not_active Expired - Lifetime
- 2002-11-20 AU AU2002365979A patent/AU2002365979A1/en not_active Abandoned
- 2002-11-20 AT AT02803675T patent/ATE418420T1/de not_active IP Right Cessation
- 2002-11-20 WO PCT/US2002/037135 patent/WO2003043780A2/en active Application Filing
- 2002-11-20 US US10/300,481 patent/US7037838B2/en not_active Expired - Lifetime
-
2005
- 2005-02-18 HK HK05101413.2A patent/HK1068840A1/xx not_active IP Right Cessation
-
2006
- 2006-02-28 US US11/363,816 patent/US7323414B2/en not_active Expired - Lifetime
-
2012
- 2012-02-06 JP JP2012022627A patent/JP5628224B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2012134515A (ja) | 2012-07-12 |
US20070289946A1 (en) | 2007-12-20 |
EP1446263A2 (de) | 2004-08-18 |
WO2003043780B1 (en) | 2003-10-30 |
US7323414B2 (en) | 2008-01-29 |
WO2003043780A2 (en) | 2003-05-30 |
JP2005510072A (ja) | 2005-04-14 |
WO2003043780A3 (en) | 2003-08-28 |
CA2467806A1 (en) | 2003-05-30 |
ATE418420T1 (de) | 2009-01-15 |
JP5628224B2 (ja) | 2014-11-19 |
US7037838B2 (en) | 2006-05-02 |
AU2002365979A8 (en) | 2003-06-10 |
HK1068840A1 (en) | 2005-05-06 |
CA2467806C (en) | 2011-04-19 |
EP1446263B1 (de) | 2008-12-24 |
US20040033690A1 (en) | 2004-02-19 |
AU2002365979A1 (en) | 2003-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60230538D1 (de) | Verfahren zum polieren der oberfläche eines substrats | |
MY125775A (en) | Method for treating substrates for microelectronics and substrates obtained by said method. | |
DE60134797D1 (de) | Verfahren zur Herstellung eines Schleifgegenstands | |
DE69906155D1 (de) | Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern | |
ATE480868T1 (de) | Verfahren zur behandlung von substratoberflächen | |
WO2004108617A3 (en) | Methods of finishing quartz glass surfaces and components made by the methods | |
ATE549795T1 (de) | Oberflächenwellen-bauelement und verfahren zu seiner herstellung | |
ATE548751T1 (de) | Verfahren und system zur reaktiven atomplasmaverarbeitung mit atmosphärischem druck für oberflächenmodifikationen | |
DE602004013163D1 (de) | Verfahren zur Herstellung eines Germanium-On-Insulator-Wafers (GeOI) | |
ATE333343T1 (de) | Verfahren zum reinigen eines chemisch- mechanischen polierkissens | |
DE50100177D1 (de) | Verfahren zur Oberflächenpolitur von Siliciumscheiben | |
ATE233431T1 (de) | Verfahren und lösung zur reinigung eines substrats von einer metallkontamination | |
TW200516656A (en) | Cleaning process and apparatus for silicate materials | |
TW200604022A (en) | A method of manufacturing a nozzle plate | |
TW200505617A (en) | Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate | |
DE602004028443D1 (de) | Hochpräziser spiegel und verfahren zu seiner herstellung | |
ATE303209T1 (de) | Verfahren zur automatischen flächenbehandlung | |
TW200725733A (en) | Apparatus and methods for slurry cleaning of etch chambers | |
ATE343474T1 (de) | Verfahren und vorrichtung zur herstellung von furnieren und von furnierten teilen sowie furniere und furnierte teile | |
CN103794489A (zh) | 等离子蚀刻的方法 | |
TW200629387A (en) | Uniform passivation method for conductive feature | |
ATE332211T1 (de) | Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten | |
ATE373071T1 (de) | Zusammensetzung und verfahren zur behandlung von halbleitersubstraten | |
ATE217362T1 (de) | Verfahren zum vakuumbeschichten eines gewölbten substrates | |
DE60105314D1 (de) | Verfahren zur herstellung von taxanderivaten |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |