ATE233431T1 - Verfahren und lösung zur reinigung eines substrats von einer metallkontamination - Google Patents

Verfahren und lösung zur reinigung eines substrats von einer metallkontamination

Info

Publication number
ATE233431T1
ATE233431T1 AT95109723T AT95109723T ATE233431T1 AT E233431 T1 ATE233431 T1 AT E233431T1 AT 95109723 T AT95109723 T AT 95109723T AT 95109723 T AT95109723 T AT 95109723T AT E233431 T1 ATE233431 T1 AT E233431T1
Authority
AT
Austria
Prior art keywords
cleaning
metal contamination
substrate
solution
metal
Prior art date
Application number
AT95109723T
Other languages
English (en)
Inventor
Joseph M Ilardi
George Schwartzkopf
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Application granted granted Critical
Publication of ATE233431T1 publication Critical patent/ATE233431T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C11D1/90—Betaines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C11D1/92—Sulfobetaines ; Sulfitobetaines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
AT95109723T 1994-06-23 1995-06-22 Verfahren und lösung zur reinigung eines substrats von einer metallkontamination ATE233431T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/264,858 US5498293A (en) 1994-06-23 1994-06-23 Cleaning wafer substrates of metal contamination while maintaining wafer smoothness

Publications (1)

Publication Number Publication Date
ATE233431T1 true ATE233431T1 (de) 2003-03-15

Family

ID=23007910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95109723T ATE233431T1 (de) 1994-06-23 1995-06-22 Verfahren und lösung zur reinigung eines substrats von einer metallkontamination

Country Status (11)

Country Link
US (1) US5498293A (de)
EP (1) EP0690483B1 (de)
JP (1) JP2670989B2 (de)
KR (1) KR0177279B1 (de)
AT (1) ATE233431T1 (de)
CA (1) CA2146680C (de)
DE (1) DE69529705T2 (de)
ES (1) ES2189814T3 (de)
IL (1) IL113037A (de)
MY (1) MY112614A (de)
TW (1) TW311934B (de)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
FR2722511B1 (fr) * 1994-07-15 1999-04-02 Ontrak Systems Inc Procede pour enlever les metaux dans un dispositif de recurage
RU2052868C1 (ru) * 1995-02-03 1996-01-20 Акционерное общество "Научно-производственное предприятие "Сапфир" Состав раствора для очистки поверхности (типа "полифункционал")
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5603849A (en) * 1995-11-15 1997-02-18 Micron Technology, Inc. Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid
US5679169A (en) * 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6640816B2 (en) 1999-01-22 2003-11-04 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
US5645737A (en) * 1996-02-21 1997-07-08 Micron Technology, Inc. Wet clean for a surface having an exposed silicon/silica interface
KR100207469B1 (ko) * 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
AU3482997A (en) * 1996-06-26 1998-01-14 Church & Dwight Company, Inc. Aqueous cleaning composition for removing flux and method of use
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US5851980A (en) * 1996-07-10 1998-12-22 S. C. Johnson & Sons, Inc. Liquid hard surface cleaner comprising a monocarboxylate acid and an ampholytic surfactant having no carboxyl groups
US5944908A (en) * 1996-10-10 1999-08-31 Henkel Corporation Cleaning compositions and processes suitable for replacing grit blasting to clean metal mold surfaces for plastics
US6265781B1 (en) 1996-10-19 2001-07-24 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6095161A (en) * 1997-01-17 2000-08-01 Micron Technology, Inc. Processing and post-processing compositions and methods of using same
US5935869A (en) * 1997-07-10 1999-08-10 International Business Machines Corporation Method of planarizing semiconductor wafers
KR100510440B1 (ko) * 1997-08-20 2005-10-21 삼성전자주식회사 세정용액및이를이용한반도체소자의세정방법
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
MXPA00011391A (es) 1998-05-18 2005-06-20 Mallinckrodt Inc Composiciones alcalinas que contienen silicato para limpiar substratos microelectronicos.
JP3111979B2 (ja) * 1998-05-20 2000-11-27 日本電気株式会社 ウエハの洗浄方法
US5964953A (en) * 1998-05-26 1999-10-12 Memc Electronics Materials, Inc. Post-etching alkaline treatment process
US6280527B1 (en) 1998-06-12 2001-08-28 International Business Machines Corporation Aqueous quaternary ammonium hydroxide as a screening mask cleaner
EP0982765B1 (de) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Verfahren zur Reinigung eines Halbleitersubstrats
US6468909B1 (en) * 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
JP3003684B1 (ja) * 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
US5989359A (en) * 1998-10-09 1999-11-23 Berbel; Jose A. Method for drying objects with fluids
JP3279532B2 (ja) * 1998-11-06 2002-04-30 日本電気株式会社 半導体装置の製造方法
US6127282A (en) * 1998-11-12 2000-10-03 Advanced Micro Devices, Inc. Method for removing copper residue from surfaces of a semiconductor wafer
US6544842B1 (en) * 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
GB2349892A (en) * 1999-05-13 2000-11-15 Warwick Internat Group Ltd Metal cleaning
US6277799B1 (en) * 1999-06-25 2001-08-21 International Business Machines Corporation Aqueous cleaning of paste residue
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6358788B1 (en) * 1999-08-30 2002-03-19 Micron Technology, Inc. Method of fabricating a wordline in a memory array of a semiconductor device
US6537381B1 (en) * 1999-09-29 2003-03-25 Lam Research Corporation Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR100356987B1 (ko) * 2000-01-22 2002-10-18 엘지.필립스 엘시디 주식회사 열경화성 수지 제거용 조성물
US6417147B2 (en) * 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6589356B1 (en) * 2000-09-29 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd Method for cleaning a silicon-based substrate without NH4OH vapor damage
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6525009B2 (en) 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
US6991634B2 (en) 2001-05-23 2006-01-31 Pentax Corporation Clip device of endoscope
US20040011991A1 (en) * 2001-06-13 2004-01-22 Markle Richard J. Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US20030224958A1 (en) * 2002-05-29 2003-12-04 Andreas Michael T. Solutions for cleaning polished aluminum-containing layers
AU2003238773A1 (en) * 2002-06-07 2003-12-22 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
DE602004009584T2 (de) * 2003-06-27 2008-08-07 Interuniversitair Microelektronica Centrum (Imec) Halbleiterreinigungslösung
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
BRPI0416067A (pt) * 2003-10-29 2007-01-02 Mallinckrodt Baker Inc removedores alcalinos de resìduo de cinza/gravação pós-plasma e composições de descascamento de fotorresistes contendo inibidores de corrosão de haleto de metal
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
JP4632290B2 (ja) * 2004-03-23 2011-02-16 日本碍子株式会社 窒化アルミニウム製サセプターの洗浄方法
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur
WO2006009668A1 (en) * 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR20070087702A (ko) * 2005-04-04 2007-08-29 주식회사 하이닉스반도체 금속 오염 억제를 위한 반도체웨이퍼의 세정방법
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
US8772214B2 (en) 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
EP2428557A1 (de) * 2005-12-30 2012-03-14 LAM Research Corporation Reinigungslösung
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US8685909B2 (en) * 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
TW200833871A (en) * 2006-11-17 2008-08-16 Sachem Inc Selective metal wet etch composition and process
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
JP2007186715A (ja) * 2007-03-30 2007-07-26 Nippon Shokubai Co Ltd 電子部品用洗浄剤
US20080245390A1 (en) * 2007-04-03 2008-10-09 Lam Research Corporation Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
US8211846B2 (en) 2007-12-14 2012-07-03 Lam Research Group Materials for particle removal by single-phase and two-phase media
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
MY160091A (en) 2010-06-09 2017-02-28 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
EP2557147B1 (de) 2011-08-09 2015-04-01 Basf Se Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten
WO2016032112A1 (ko) 2014-08-26 2016-03-03 이영일 로고 착탈식 모자
KR20160054435A (ko) 2015-04-16 2016-05-16 이영일 로고 착탈식 모자
WO2020179819A1 (ja) * 2019-03-05 2020-09-10 日産化学株式会社 洗浄剤組成物及び洗浄方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS59109599A (ja) * 1982-12-16 1984-06-25 株式会社東芝 薬品容器の洗浄方法
JPS63114132A (ja) * 1986-10-31 1988-05-19 Showa Denko Kk 表面処理液
JP2569574B2 (ja) * 1987-07-09 1997-01-08 三菱瓦斯化学株式会社 半導体処理剤
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
JPH0393229A (ja) * 1989-09-05 1991-04-18 Pure Retsukusu:Kk 半導体用ウェーハの清浄化方法
US5207866A (en) * 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
CA2059841A1 (en) * 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
DE69219998T2 (de) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Verfahren zur Entfernung von Polymeren aus Sacklöchern in Halbleitervorrichtungen
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
EP0578507B1 (de) * 1992-07-09 2005-09-28 Ekc Technology, Inc. Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
AU2494092A (en) * 1992-09-03 1994-03-29 Circuit Chemical Products Gmbh Cleaning-agent mixture for cleaning printed circuits and a method of cleaning such circuits
US5350533A (en) * 1993-01-26 1994-09-27 General Atomics International Services Corporation Pavement deicer compositions
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates

Also Published As

Publication number Publication date
CA2146680C (en) 2002-12-10
KR0177279B1 (ko) 1999-04-15
TW311934B (de) 1997-08-01
MY112614A (en) 2001-07-31
EP0690483A3 (de) 1998-09-09
KR960002614A (ko) 1996-01-26
IL113037A0 (en) 1995-06-29
CA2146680A1 (en) 1995-12-24
JP2670989B2 (ja) 1997-10-29
DE69529705T2 (de) 2004-01-15
EP0690483A2 (de) 1996-01-03
JPH0817778A (ja) 1996-01-19
EP0690483B1 (de) 2003-02-26
DE69529705D1 (de) 2003-04-03
US5498293A (en) 1996-03-12
IL113037A (en) 1999-06-20
ES2189814T3 (es) 2003-07-16

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