ATE315965T1 - Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats - Google Patents

Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats

Info

Publication number
ATE315965T1
ATE315965T1 AT97910817T AT97910817T ATE315965T1 AT E315965 T1 ATE315965 T1 AT E315965T1 AT 97910817 T AT97910817 T AT 97910817T AT 97910817 T AT97910817 T AT 97910817T AT E315965 T1 ATE315965 T1 AT E315965T1
Authority
AT
Austria
Prior art keywords
substrate
maintaining
wafer substrate
flatness
metal contaminants
Prior art date
Application number
AT97910817T
Other languages
English (en)
Inventor
David C Skee
George Schwartzkopf
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Application granted granted Critical
Publication of ATE315965T1 publication Critical patent/ATE315965T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/268—Carbohydrates or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Molecular Biology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AT97910817T 1996-10-11 1997-10-07 Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats ATE315965T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/729,565 US5989353A (en) 1996-10-11 1996-10-11 Cleaning wafer substrates of metal contamination while maintaining wafer smoothness

Publications (1)

Publication Number Publication Date
ATE315965T1 true ATE315965T1 (de) 2006-02-15

Family

ID=24931617

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97910817T ATE315965T1 (de) 1996-10-11 1997-10-07 Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats

Country Status (11)

Country Link
US (1) US5989353A (de)
EP (1) EP0886547B1 (de)
JP (1) JP4282093B2 (de)
KR (1) KR100305314B1 (de)
CN (1) CN1107343C (de)
AT (1) ATE315965T1 (de)
DE (1) DE69735126T2 (de)
DK (1) DK0886547T3 (de)
ES (1) ES2252776T3 (de)
TW (1) TW467954B (de)
WO (1) WO1998016330A1 (de)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6224785B1 (en) * 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
JP3180779B2 (ja) * 1998-10-05 2001-06-25 日本電気株式会社 半導体装置の製造方法
US6277799B1 (en) * 1999-06-25 2001-08-21 International Business Machines Corporation Aqueous cleaning of paste residue
US6348100B1 (en) * 1999-07-01 2002-02-19 International Business Machines Corporation Resist bowl cleaning
JP4344855B2 (ja) * 1999-08-06 2009-10-14 野村マイクロ・サイエンス株式会社 電子デバイス用基板の有機汚染防止法及び有機汚染を防止した電子デバイス用基板
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6592433B2 (en) * 1999-12-31 2003-07-15 Intel Corporation Method for defect reduction
TW466545B (en) * 2000-03-30 2001-12-01 United Microelectronics Corp Method for removing pad nodule
KR100360985B1 (ko) * 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
JP2002016034A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
US6589356B1 (en) * 2000-09-29 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd Method for cleaning a silicon-based substrate without NH4OH vapor damage
JP2002110679A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6887493B2 (en) * 2000-10-25 2005-05-03 Adi Shefer Multi component controlled release system for oral care, food products, nutraceutical, and beverages
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
JP2002180044A (ja) * 2000-12-07 2002-06-26 Toray Eng Co Ltd 熱可塑性ポリイミド樹脂用エッチング液
JP2002237481A (ja) * 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
KR100416794B1 (ko) * 2001-04-12 2004-01-31 삼성전자주식회사 금속 건식 에쳐 부품의 세정제 및 세정 방법
US6821896B1 (en) * 2001-05-31 2004-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method to eliminate via poison effect
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US7468105B2 (en) * 2001-10-16 2008-12-23 Micron Technology, Inc. CMP cleaning composition with microbial inhibitor
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
KR101017738B1 (ko) 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 포토레지스트 박리제 조성물 및 세정 조성물
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
EP1509816B1 (de) * 2002-05-21 2012-12-26 Northwestern University Elektrostatische lithographie
JP4304154B2 (ja) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP2004181452A (ja) * 2002-11-30 2004-07-02 Matsushita Electric Ind Co Ltd 洗浄装置、洗浄方法および洗浄剤
DE602004009584T2 (de) * 2003-06-27 2008-08-07 Interuniversitair Microelektronica Centrum (Imec) Halbleiterreinigungslösung
US7678281B2 (en) 2003-07-18 2010-03-16 Bj Services Company Method of reclaiming brine solutions using an organic chelant
US7674384B2 (en) * 2003-07-18 2010-03-09 Bj Services Company Method of reclaiming brine solutions using an organic chelant
US7144512B2 (en) * 2003-07-18 2006-12-05 Bj Services Company Method of reclaiming brine solutions using an organic chelant
US7172703B2 (en) * 2003-07-18 2007-02-06 Bj Services Co Method of reclaiming a well completion brine solutions using an organic chelant
US7306663B2 (en) * 2003-08-05 2007-12-11 Halox, Division Of Hammond Group, Inc. Corrosion inhibitor
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
US20050065050A1 (en) * 2003-09-23 2005-03-24 Starzynski John S. Selective silicon etch chemistries, methods of production and uses thereof
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
JP2005336342A (ja) * 2004-05-27 2005-12-08 Tosoh Corp 洗浄用組成物
US20060011578A1 (en) * 2004-07-16 2006-01-19 Lam Research Corporation Low-k dielectric etch
US8178482B2 (en) * 2004-08-03 2012-05-15 Avantor Performance Materials, Inc. Cleaning compositions for microelectronic substrates
JP4810928B2 (ja) * 2004-08-18 2011-11-09 三菱瓦斯化学株式会社 洗浄液および洗浄法。
AU2005308452A1 (en) * 2004-11-26 2006-06-01 Stentomics, Inc. Chelating and binding chemicals to a medical implant
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR20070087702A (ko) * 2005-04-04 2007-08-29 주식회사 하이닉스반도체 금속 오염 억제를 위한 반도체웨이퍼의 세정방법
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20070228011A1 (en) * 2006-03-31 2007-10-04 Buehler Mark F Novel chemical composition to reduce defects
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20080116170A1 (en) * 2006-11-17 2008-05-22 Sian Collins Selective metal wet etch composition and process
JP2007186715A (ja) * 2007-03-30 2007-07-26 Nippon Shokubai Co Ltd 電子部品用洗浄剤
US7955520B2 (en) 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
DE102007058876A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Bearbeitung von Waferoberflächen
CN102197124B (zh) 2008-10-21 2013-12-18 高级技术材料公司 铜清洁及保护调配物
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8309502B2 (en) 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
CN102459924B (zh) 2009-04-10 2014-11-05 3M创新有限公司 盲紧固件
US9422964B2 (en) 2009-04-10 2016-08-23 3M Innovative Properties Company Blind fasteners
WO2011000694A1 (en) * 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
JP2011124546A (ja) 2009-10-14 2011-06-23 Rohm & Haas Electronic Materials Llc 半導体ウェハを清浄化しマイクロエッチングする方法
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
EP2501976B1 (de) 2009-11-16 2017-10-04 3M Innovative Properties Company Verbindung von rohrabschnitten
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
CN102085346B (zh) * 2011-01-02 2012-02-15 刘晓云 一种治疗慢性阻塞性肺病的中药组合物
CN103717687B (zh) * 2011-08-09 2016-05-18 巴斯夫欧洲公司 处理硅基材表面的含水碱性组合物和方法
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
CN103882464B (zh) * 2014-03-26 2016-04-20 西安同鑫新材料科技有限公司 一种钢铁表面清洗剂及其应用
KR102209423B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212758A (en) * 1978-10-20 1980-07-15 Belkevich Petr I Cleansing agents containing oleic acid, isopropanol and ethylacetate
US4462871A (en) * 1982-04-06 1984-07-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Epitaxial thinning process
US4675125A (en) * 1984-07-02 1987-06-23 Cincinnati-Vulcan Company Multi-purpose metal cleaning composition containing a boramide
US5098594A (en) * 1988-05-20 1992-03-24 The Boeing Company Carbonate/diester based solvent
AU3667189A (en) * 1988-06-23 1990-01-04 Unilever Plc Enzyme-containing liquid detergents
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5139607A (en) * 1991-04-23 1992-08-18 Act, Inc. Alkaline stripping compositions
JP2732392B2 (ja) * 1992-03-17 1998-03-30 信越半導体株式会社 半導体ウェーハの処理方法
JP3048207B2 (ja) * 1992-07-09 2000-06-05 イー．ケー．シー．テクノロジー．インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
US5520843A (en) * 1994-04-01 1996-05-28 Triple R Enterprises, Llc Vinyl surface cleanser and protectant
JP3683600B2 (ja) * 1994-06-30 2005-08-17 ミネソタ マイニング アンド マニュファクチャリング カンパニー 洗浄剤組成物
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5703032A (en) * 1996-03-06 1997-12-30 Lever Brothers Company, Division Of Conopco, Inc. Heavy duty liquid detergent composition comprising cellulase stabilization system

Also Published As

Publication number Publication date
DE69735126D1 (de) 2006-04-06
KR100305314B1 (ko) 2001-11-30
WO1998016330A1 (en) 1998-04-23
DK0886547T3 (da) 2006-05-22
EP0886547A1 (de) 1998-12-30
US5989353A (en) 1999-11-23
EP0886547A4 (de) 2002-05-08
JP2000503342A (ja) 2000-03-21
CN1107343C (zh) 2003-04-30
TW467954B (en) 2001-12-11
KR19990072074A (ko) 1999-09-27
DE69735126T2 (de) 2006-08-03
CN1187689A (zh) 1998-07-15
ES2252776T3 (es) 2006-05-16
JP4282093B2 (ja) 2009-06-17
EP0886547B1 (de) 2006-01-18

Similar Documents

Publication Publication Date Title
ATE315965T1 (de) Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats
DK1193302T3 (da) Overtræk afvisende farve, lak, forureninger, bioorganismer, olie, vand og/eller smuds
DE69529705T2 (de) Verfahren und Lösung zur Reinigung eines Substrats von einer Metallkontamination
DK555789A (da) Stabilt mikroemulsionsrengoeringsmiddel
KR960701186A (ko) 다표면 세정 조성물 및 그것의 사용방법(multi-surface cleaning compositions and method of use)
DE60222532D1 (de) Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren
ES8606534A1 (es) Un procedimiento para la preparacion de una composicion a base de agente tensioactivo no ionico y-o anionico-acido hidrocarbil-carboxilico.
MY102924A (en) Hard surface cleaning compositions
JPS5937320B2 (ja) アルカリ洗浄剤
TR200002467T2 (tr) Sert yüzey temizlemek için sıvı bileşimler
FI884659A0 (fi) Vaetskedispersionsblandning och foerfarande foer polering av jaernkomponenter.
DE69413991D1 (de) Verfahren zur reinigung von vinyloberflächen mittels aminoxidtensid enthaltender schwach sauren reinigungsmittel für harte oberflächen
DE60215321D1 (de) Verfahren zum entfernen von haftendem organischem material
DE69121245D1 (de) Verfahren und zusammensetzung zum reinigen von gegenständen
DE59305005D1 (de) Blockcopolyacetale, verfahren zu ihrer herstellung und ihre verwendung in wasch- und reinigungsmitteln
BR8506711A (pt) Composicao e processo para condicionamento da superficie de substratos de plastico antes de metalizacao
DK1027221T3 (da) Anvendelse af alkylpolyglycosider i trykfarverengøringsmidler
ATE246242T1 (de) Verwendung von reinigungsmitteln für harte oberlächen
AR017315A1 (es) Una composicion limpiadora que comprende una amina alifatica alcoxilada y un hidrotropo tensioactivo anionico, un procedimiento que retarda la formacion de sarro calizo sobre una superficie que emplea dicha composicion.
JPH0525279B2 (de)
MY115356A (en) Hf cleaning method of silicon wafers
JPH01198697A (ja) 洗剤組成物
NZ504290A (en) Diester amine adducts
ATE259404T1 (de) Verfahren zum behandeln eines substrats zum sparen von wasser
GB2273721A (en) Bleaches

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 0886547

Country of ref document: EP

EEFA Change of the company name