FR2722511B1 - Procede pour enlever les metaux dans un dispositif de recurage - Google Patents

Procede pour enlever les metaux dans un dispositif de recurage

Info

Publication number
FR2722511B1
FR2722511B1 FR9508510A FR9508510A FR2722511B1 FR 2722511 B1 FR2722511 B1 FR 2722511B1 FR 9508510 A FR9508510 A FR 9508510A FR 9508510 A FR9508510 A FR 9508510A FR 2722511 B1 FR2722511 B1 FR 2722511B1
Authority
FR
France
Prior art keywords
removing metals
scouring device
scouring
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9508510A
Other languages
English (en)
Other versions
FR2722511A1 (fr
Inventor
Wilbur C Krusell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ontrak Systems Inc
Original Assignee
Ontrak Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ontrak Systems Inc filed Critical Ontrak Systems Inc
Publication of FR2722511A1 publication Critical patent/FR2722511A1/fr
Application granted granted Critical
Publication of FR2722511B1 publication Critical patent/FR2722511B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • B08B1/32
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
FR9508510A 1994-07-15 1995-07-13 Procede pour enlever les metaux dans un dispositif de recurage Expired - Fee Related FR2722511B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27563294A 1994-07-15 1994-07-15

Publications (2)

Publication Number Publication Date
FR2722511A1 FR2722511A1 (fr) 1996-01-19
FR2722511B1 true FR2722511B1 (fr) 1999-04-02

Family

ID=23053195

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9508510A Expired - Fee Related FR2722511B1 (fr) 1994-07-15 1995-07-13 Procede pour enlever les metaux dans un dispositif de recurage

Country Status (4)

Country Link
US (1) US6274059B1 (fr)
JP (3) JPH08187475A (fr)
DE (1) DE19525521B4 (fr)
FR (1) FR2722511B1 (fr)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6799932B2 (en) * 1994-04-28 2004-10-05 Semitool, Inc. Semiconductor wafer processing apparatus
JPH08162425A (ja) 1994-12-06 1996-06-21 Mitsubishi Electric Corp 半導体集積回路装置の製造方法および製造装置
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US6743723B2 (en) 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
WO1998004646A1 (fr) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Composition et procede de polissage mecanique chimique
US6200201B1 (en) * 1996-08-29 2001-03-13 Lam Research Corporation Cleaning/buffer apparatus for use in a wafer processing device
US6039059A (en) 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
TW364165B (en) * 1996-11-29 1999-07-11 Canon Kk Method for fabricating semiconductor device
US6296714B1 (en) * 1997-01-16 2001-10-02 Mitsubishi Materials Silicon Corporation Washing solution of semiconductor substrate and washing method using the same
US6551972B1 (en) 1997-07-10 2003-04-22 Merck Patent Gesellschaft Solutions for cleaning silicon semiconductors or silicon oxides
TW387936B (en) * 1997-08-12 2000-04-21 Kanto Kagaku Washing solution
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6479443B1 (en) 1997-10-21 2002-11-12 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
US6303551B1 (en) 1997-10-21 2001-10-16 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
US6593282B1 (en) 1997-10-21 2003-07-15 Lam Research Corporation Cleaning solutions for semiconductor substrates after polishing of copper film
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
DE19830162A1 (de) * 1998-07-06 2000-01-20 Steag Electronic Systems Gmbh Verfahren und Vorrichtung zum Reinigen von Substraten
JP2000040684A (ja) * 1998-07-23 2000-02-08 Ebara Corp 洗浄装置
US6572453B1 (en) 1998-09-29 2003-06-03 Applied Materials, Inc. Multi-fluid polishing process
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
EP1039518A1 (fr) * 1999-03-24 2000-09-27 Interuniversitair Micro-Elektronica Centrum Vzw Solution chimique et méthode pour réduire la contamination métallique sur la surface d'un substrat semiconducteur
EP1018759A3 (fr) * 1999-01-08 2000-08-30 Interuniversitair Micro-Elektronica Centrum Vzw Solution chimique et méthode pour réduire la contamination métallique sur la surface d'un substrat semiconducteur
US6592676B1 (en) 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate
US6358847B1 (en) 1999-03-31 2002-03-19 Lam Research Corporation Method for enabling conventional wire bonding to copper-based bond pad features
JP4516176B2 (ja) 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US6711775B2 (en) 1999-06-10 2004-03-30 Lam Research Corporation System for cleaning a semiconductor wafer
US6267142B1 (en) 1999-06-25 2001-07-31 Lam Research Corporation Fluid delivery stablization for wafer preparation systems
US6405399B1 (en) 1999-06-25 2002-06-18 Lam Research Corporation Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
AT409429B (de) * 1999-07-15 2002-08-26 Sez Semiconduct Equip Zubehoer Verfahren zum ätzbehandeln von halbleitersubstraten zwecks freilegen einer metallschicht
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
US6537381B1 (en) 1999-09-29 2003-03-25 Lam Research Corporation Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
KR100724883B1 (ko) * 2000-03-17 2007-06-04 신에쯔 한도타이 가부시키가이샤 실리콘웨이퍼의 보관용수 및 보관방법
CN1267972C (zh) * 2000-03-21 2006-08-02 和光纯药工业株式会社 半导体基板洗涤剂和洗涤方法
US6622335B1 (en) * 2000-03-29 2003-09-23 Lam Research Corporation Drip manifold for uniform chemical delivery
DE10018338C1 (de) * 2000-04-13 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6627550B2 (en) 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6627546B2 (en) * 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6585826B2 (en) * 2001-11-02 2003-07-01 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
US20050247675A1 (en) * 2004-05-04 2005-11-10 Texas Instruments Incorporated Treatment of dies prior to nickel silicide formation
TWI408263B (zh) * 2004-07-01 2013-09-11 Sumitomo Electric Industries AlxGayIn1-x-yN基板、AlxGayIn1-x-yN基板之清潔方法、AlN基板及AlN基板之清潔方法
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
TWI324797B (en) * 2005-04-05 2010-05-11 Lam Res Corp Method for removing particles from a surface
JP2008536312A (ja) * 2005-04-08 2008-09-04 サッチェム, インコーポレイテッド 金属窒化物の選択的なウェットエッチング
TW200720493A (en) 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
JP2007150167A (ja) * 2005-11-30 2007-06-14 Shin Etsu Handotai Co Ltd 半導体ウエーハの平面研削方法および製造方法
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US7374621B2 (en) * 2006-02-09 2008-05-20 Hitachi Global Storage Technologies Netherlands Bv System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US20070240734A1 (en) * 2006-04-14 2007-10-18 Ching-Wen Teng Method of cleaning post-cmp wafer
TWI352628B (en) * 2006-07-21 2011-11-21 Akrion Technologies Inc Nozzle for use in the megasonic cleaning of substr
JP2010226089A (ja) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc 半導体ウェハをクリーニングする方法
JP5671793B2 (ja) * 2009-10-08 2015-02-18 株式会社Sumco 仕上研磨を施したシリコンウェーハの洗浄方法
JP5819589B2 (ja) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド 研磨用組成物を用いた方法
CN101780459B (zh) * 2010-03-12 2011-10-26 西安热工研究院有限公司 一种滤元离线化学清洗装置
US20130098395A1 (en) * 2011-10-21 2013-04-25 Applied Materials, Inc. Semiconductor substrate cleaning apparatus, systems, and methods
CN102744230A (zh) * 2012-07-26 2012-10-24 浙江矽盛电子有限公司 一种粘污太阳能硅片的清洗方法
US11694889B2 (en) * 2020-03-02 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing cleaning system with temperature control for defect reduction
CN111701947B (zh) * 2020-07-23 2021-06-22 安徽富乐德科技发展股份有限公司 一种半导体硅片超声和兆声清洗系统

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA730109A (en) * 1966-03-15 R. Ehren Irwin Method for cleaning metal articles
US3365401A (en) * 1967-03-14 1968-01-23 Enthone Immersion type nickel stripper
GB1206371A (en) * 1968-03-21 1970-09-23 Westinghouse Brake & Signal The etching of silicon semiconductor wafers and semiconductor devices incorporating such wafers
US3909437A (en) * 1973-01-18 1975-09-30 Dow Chemical Co Noncorrosive acid, solvent and nonionic surfactant composition
USRE30283E (en) * 1973-04-11 1980-05-27 The Dow Chemical Company Sulfonium compounds as corrosion inhibitors in aqueous acidic cleaning solutions
SE400575B (sv) * 1974-12-13 1978-04-03 Nordnero Ab Bad for betning av koppar och dess legeringar
US3970471A (en) * 1975-04-23 1976-07-20 Western Electric Co., Inc. Methods and apparatus for treating wafer-like articles
US4174290A (en) * 1976-12-16 1979-11-13 Custom Research And Development Metal oxide remover containing a strong mineral acid, citric acid and a basic ammonia derivative
US4264418A (en) * 1978-09-19 1981-04-28 Kilene Corp. Method for detersifying and oxide coating removal
US4452643A (en) * 1983-01-12 1984-06-05 Halliburton Company Method of removing copper and copper oxide from a ferrous metal surface
US4529450A (en) * 1983-10-18 1985-07-16 The United States Of America As Represented By The Secretary Of The Navy Metal oxide remover and method of using
US4695327A (en) 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
JPS62260083A (ja) * 1986-05-06 1987-11-12 Mitsubishi Heavy Ind Ltd ステンレス鋼表面の化学洗浄法
DE3738651A1 (de) * 1987-11-13 1989-05-24 Wacker Chemitronic Verfahren zur hydrophilierenden und/oder kittreste entfernenden oberflaechenbehandlung von siliciumscheiben
JPH01243433A (ja) * 1988-03-24 1989-09-28 Lion Corp セラミック基板用表面処理剤
JPH02250324A (ja) * 1989-03-23 1990-10-08 Hitachi Ltd 半導体装置の製造方法およびそれに使用される洗浄装置
JP2683940B2 (ja) * 1989-08-09 1997-12-03 信越半導体 株式会社 ワークの自動洗浄装置
JP2599021B2 (ja) * 1989-11-09 1997-04-09 新日本製鐵株式会社 シリコンウエハのエッチング方法および洗浄方法
JPH03242352A (ja) * 1990-02-20 1991-10-29 Nippon Sheet Glass Co Ltd 硬脆材料の洗浄方法
JPH03255629A (ja) * 1990-03-05 1991-11-14 Nec Corp 半導体ウェハーの洗浄方法
JPH04130100A (ja) * 1990-09-21 1992-05-01 Nippon Steel Corp 半導体ウェハのエッチング方法および洗浄方法
CA2057217C (fr) * 1990-12-11 1999-08-31 Bruce Edward Holbein Procede de decontamination de sols contenant des metaux lourds, toxiques
US5217569A (en) * 1991-01-07 1993-06-08 United Technologies Corporation Chemical milling solution for reduced hydrogen absorption
CA2059841A1 (fr) * 1991-01-24 1992-07-25 Ichiro Hayashida Solutions pour le traitement de surfaces et methode de nettoyage
JP3435698B2 (ja) * 1992-03-11 2003-08-11 三菱瓦斯化学株式会社 半導体基板の洗浄液
TW263531B (fr) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
DE4209865C2 (de) * 1992-03-26 1994-06-30 Wacker Chemitronic Verfahren zur Verbesserung der Wirksamkeit wässeriger Reinigungsmittel zum Entfernen metallhaltiger Rückstände auf Halbleiteroberflächen
US5308400A (en) * 1992-09-02 1994-05-03 United Microelectronics Corporation Room temperature wafer cleaning process
JPH0697136A (ja) * 1992-09-17 1994-04-08 Hitachi Ltd 基板洗浄方法およびその装置
US5397397A (en) * 1992-09-18 1995-03-14 Crestek, Inc. Method for cleaning and drying of metallic and nonmetallic surfaces
JPH06120196A (ja) * 1992-10-01 1994-04-28 Oogawara Kakoki Kk 超音波洗浄乾燥方法とその装置
JPH06196461A (ja) * 1992-12-25 1994-07-15 Kawasaki Steel Corp シリコンウエハの洗浄方法
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
US5909742A (en) * 1993-03-26 1999-06-08 Betzdearborn Inc. Metal cleaning method
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5723019A (en) * 1994-07-15 1998-03-03 Ontrak Systems, Incorporated Drip chemical delivery method and apparatus
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
GB2297976A (en) * 1995-02-01 1996-08-21 Reckitt & Colmann Prod Ltd Improvements in or relating to a bleaching process
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
DE69620037T2 (de) * 1995-10-13 2002-11-07 Lam Res Corp VORRICHTUNG ZUR aBGABE VON ZWEI CHEMISCHEN PRODUKTEN DURCH EINE BÜRSTE
JP3640272B2 (ja) * 1996-02-09 2005-04-20 三菱電機株式会社 半導体装置の製造方法
US5645737A (en) * 1996-02-21 1997-07-08 Micron Technology, Inc. Wet clean for a surface having an exposed silicon/silica interface
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers

Also Published As

Publication number Publication date
DE19525521B4 (de) 2007-04-26
JP2007165935A (ja) 2007-06-28
US6274059B1 (en) 2001-08-14
JP2010109384A (ja) 2010-05-13
FR2722511A1 (fr) 1996-01-19
DE19525521A1 (de) 1996-03-21
JPH08187475A (ja) 1996-07-23

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Effective date: 20110331