ATE373873T1 - Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren - Google Patents

Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren

Info

Publication number
ATE373873T1
ATE373873T1 AT02702149T AT02702149T ATE373873T1 AT E373873 T1 ATE373873 T1 AT E373873T1 AT 02702149 T AT02702149 T AT 02702149T AT 02702149 T AT02702149 T AT 02702149T AT E373873 T1 ATE373873 T1 AT E373873T1
Authority
AT
Austria
Prior art keywords
cleaning
cleaning solution
chemical
composition
mechanical polishing
Prior art date
Application number
AT02702149T
Other languages
English (en)
Inventor
Shahriar Naghshineh
Jeff Barnes
Ewa Oldak
Original Assignee
Esc Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Esc Inc filed Critical Esc Inc
Application granted granted Critical
Publication of ATE373873T1 publication Critical patent/ATE373873T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38Cationic compounds
    • C11D1/62Quaternary ammonium compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0073Anticorrosion compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/28Heterocyclic compounds containing nitrogen in the ring
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/265Carboxylic acids or salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3245Aminoacids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3254Esters or carbonates thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20Other heavy metals
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
AT02702149T 2001-02-12 2002-02-06 Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren ATE373873T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/781,859 US6723691B2 (en) 1999-11-16 2001-02-12 Post chemical-mechanical planarization (CMP) cleaning composition

Publications (1)

Publication Number Publication Date
ATE373873T1 true ATE373873T1 (de) 2007-10-15

Family

ID=25124179

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02702149T ATE373873T1 (de) 2001-02-12 2002-02-06 Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren

Country Status (7)

Country Link
US (1) US6723691B2 (de)
EP (2) EP1360712B9 (de)
JP (2) JP2004518819A (de)
AT (1) ATE373873T1 (de)
DE (1) DE60222532T2 (de)
TW (1) TWI299885B (de)
WO (1) WO2002065538A2 (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US20030138737A1 (en) * 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
TWI302950B (en) * 2002-01-28 2008-11-11 Mitsubishi Chem Corp Cleaning solution and method of cleanimg board of semiconductor device
JP4221191B2 (ja) 2002-05-16 2009-02-12 関東化学株式会社 Cmp後洗浄液組成物
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20050247675A1 (en) * 2004-05-04 2005-11-10 Texas Instruments Incorporated Treatment of dies prior to nickel silicide formation
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
JP2006016438A (ja) * 2004-06-30 2006-01-19 Dongwoo Fine-Chem Co Ltd 電子部品洗浄液
US7718009B2 (en) * 2004-08-30 2010-05-18 Applied Materials, Inc. Cleaning submicron structures on a semiconductor wafer surface
US20060073997A1 (en) * 2004-09-30 2006-04-06 Lam Research Corporation Solutions for cleaning silicon semiconductors or silicon oxides
KR100628215B1 (ko) * 2004-12-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
KR20060075315A (ko) * 2004-12-28 2006-07-04 동부일렉트로닉스 주식회사 반도체 소자 제조용 구리 화합물 이물질 제거를 위한 세정방법
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
JP5600376B2 (ja) * 2005-01-27 2014-10-01 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 半導体基材の処理のための組成物
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
WO2006105020A1 (en) 2005-03-25 2006-10-05 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
WO2006125462A1 (en) 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
JP2008543060A (ja) * 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
EP2687589A3 (de) * 2005-05-26 2014-05-07 Advanced Technology Materials, Inc. Nach dem chemisch-mechanischen Polieren kupferpassivierende Reinigungszusammensetzung und Verwendungsverfahren
TWI408212B (zh) * 2005-06-07 2013-09-11 Advanced Tech Materials 金屬及介電相容犧牲抗反射塗層清洗及移除組成物
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
JP4652157B2 (ja) * 2005-07-06 2011-03-16 花王株式会社 銅又は銅合金用洗浄剤組成物
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
KR101152139B1 (ko) * 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
WO2007125634A1 (ja) * 2006-03-31 2007-11-08 Sanyo Chemical Industries, Ltd. 銅配線用洗浄剤
JP5101046B2 (ja) * 2006-06-14 2012-12-19 三洋化成工業株式会社 液晶パネル用配向膜の剥離液
US7538969B2 (en) * 2006-08-23 2009-05-26 Imation Corp. Servo pattern with encoded data
WO2008023214A1 (en) * 2006-08-23 2008-02-28 Freescale Semiconductor, Inc. Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
TWI454574B (zh) * 2007-05-17 2014-10-01 Advanced Tech Materials 用於化學機械研磨後(post-CMP)清洗配方之新穎抗氧化劑
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
US8580656B2 (en) 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅の洗浄及び保護配合物
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
WO2010086893A1 (ja) * 2009-01-27 2010-08-05 三洋化成工業株式会社 銅配線半導体用洗浄剤
US20100215841A1 (en) 2009-02-20 2010-08-26 E.I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US8110535B2 (en) 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
WO2011094568A2 (en) 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
JP5702075B2 (ja) * 2010-03-26 2015-04-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅配線半導体用洗浄剤
JP5858597B2 (ja) * 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド タングステン配線半導体用洗浄剤
KR101696390B1 (ko) * 2010-06-08 2017-01-13 주식회사 동진쎄미켐 Tft-lcd 또는 반도체 소자용 세정제 조성물
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
JP6215511B2 (ja) * 2010-07-16 2017-10-18 栗田工業株式会社 ボイラ用防食剤
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
TWI619800B (zh) 2010-10-06 2018-04-01 恩特葛瑞斯股份有限公司 選擇性蝕刻金屬氮化物之組成物及方法
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
US20130053291A1 (en) * 2011-08-22 2013-02-28 Atsushi Otake Composition for cleaning substrates post-chemical mechanical polishing
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅または銅合金用エッチング液
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
SG11201405737VA (en) * 2012-03-18 2014-10-30 Entegris Inc Post-cmp formulation having improved barrier layer compatibility and cleaning performance
JP2015517691A (ja) 2012-05-18 2015-06-22 インテグリス,インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
TW201404877A (zh) * 2012-05-18 2014-02-01 Advanced Tech Materials 用於改善有機殘餘物移除之具有低銅蝕刻速率之清潔水溶液
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
EP3004287B1 (de) 2013-06-06 2021-08-18 Entegris, Inc. Zusammensetzungen und verfahren zum selektiven ätzen von titannitrid
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN103513522B (zh) * 2013-09-25 2018-06-01 青岛果子科技服务平台有限公司 半导体清洗组合物
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge選擇性蝕刻配方及其使用方法
EP3084809A4 (de) 2013-12-20 2017-08-23 Entegris, Inc. Verwendung nicht-oxidierender starker säuren zur entfernung von ionenimplantierten widerständen
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
DE102014105823A1 (de) * 2014-04-25 2015-10-29 Harting Kgaa Nachreinigungsverfahren von metallischen Kontaktelementen
EP3169765B1 (de) * 2014-07-18 2020-08-19 Cabot Microelectronics Corporation Reinigungszusammensetzung nach cmp und relevante verfahren
WO2016111990A1 (en) * 2015-01-05 2016-07-14 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
JP2015099938A (ja) * 2015-02-19 2015-05-28 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅配線半導体用洗浄剤
CN106634595B (zh) * 2016-11-02 2018-06-08 卓聪(上海)环保科技发展有限公司 一种自净环保型通信设备在线养护剂及其制备方法
KR102355690B1 (ko) 2017-04-11 2022-01-26 엔테그리스, 아이엔씨. 화학 기계적 연마 후 제제 및 사용 방법
WO2020045414A1 (ja) 2018-08-30 2020-03-05 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
KR20230061402A (ko) * 2020-09-04 2023-05-08 카오카부시키가이샤 기판의 세정 방법
CN113186539B (zh) * 2021-04-27 2022-12-06 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液及其制备方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
CN113774392B (zh) * 2021-08-12 2023-12-01 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
CN117946812A (zh) * 2022-10-18 2024-04-30 安集微电子科技(上海)股份有限公司 一种清洗组合物

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168989A (en) 1975-06-10 1979-09-25 Westinghouse Electric Corp. Stripping composition for thermoset resins and method of repairing electrical apparatus
US4294729A (en) 1979-12-17 1981-10-13 International Business Machines Corporation Composition containing alcohol and use thereof for epoxy removal
US4487708A (en) 1980-07-14 1984-12-11 Betz Laboratories, Inc. Hydroquinone oxygen scavenger for use in aqueous mediums
US4395348A (en) 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
JPS59219743A (ja) 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
DE3523088A1 (de) 1985-06-28 1987-01-08 Hoechst Ag Verfahren zur vermeidung der korrosion metallischer werkstoffe
JPH0626708B2 (ja) 1985-09-10 1994-04-13 関西ペイント株式会社 複合塗膜形成法
DE3537441A1 (de) 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
US5190723A (en) 1988-02-25 1993-03-02 Ciba-Geigy Corporation Process for inhibiting corrosion
US5143648A (en) 1989-07-20 1992-09-01 Nippon Hypox Laboratories Incorporated Ascorbic acid derivative and use as antioxidant
US5091103A (en) 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5496491A (en) 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5753601A (en) 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5988186A (en) 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5556482A (en) 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407788A (en) 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method
JP3302120B2 (ja) 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US5419877A (en) 1993-09-17 1995-05-30 General Atomics Acoustic barrier separator
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
TW274630B (de) * 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5567574A (en) 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5597420A (en) 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
US5563119A (en) 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
KR100360394B1 (ko) 1995-12-20 2003-01-24 삼성전자 주식회사 반도체기판의세정방법및이에사용되는세정액
US5704987A (en) 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5648324A (en) 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US5665688A (en) 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
KR100207469B1 (ko) 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US5932021A (en) 1996-06-26 1999-08-03 Cala; Francis R. Aqueous cleaning composition for removing flux and method of use
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5709756A (en) 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5922136A (en) 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
JPH11282176A (ja) * 1998-03-26 1999-10-15 Toray Fine Chemical Kk フォトレジスト剥離用組成物
US5935871A (en) 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
US5997658A (en) 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
JPH11283953A (ja) * 1998-03-27 1999-10-15 Sanyo Electric Co Ltd 半導体ウエハの洗浄液及びその洗浄方法
JP3775054B2 (ja) * 1998-04-28 2006-05-17 ぺんてる株式会社 ボールペン用水性インキ
US6152148A (en) 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
JP4283952B2 (ja) * 1999-10-12 2009-06-24 多摩化学工業株式会社 非鉄金属洗浄用洗浄液組成物
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition

Also Published As

Publication number Publication date
EP1360712B1 (de) 2007-09-19
JP2004518819A (ja) 2004-06-24
US20010004633A1 (en) 2001-06-21
TWI299885B (en) 2008-08-11
EP1845555A1 (de) 2007-10-17
EP1845555B8 (de) 2016-06-29
JP5097640B2 (ja) 2012-12-12
JP2009013417A (ja) 2009-01-22
EP1360712A2 (de) 2003-11-12
WO2002065538A2 (en) 2002-08-22
EP1845555B1 (de) 2015-09-16
WO2002065538A3 (en) 2003-02-13
US6723691B2 (en) 2004-04-20
DE60222532T2 (de) 2008-05-29
EP1360712B9 (de) 2008-10-29
DE60222532D1 (de) 2007-10-31

Similar Documents

Publication Publication Date Title
ATE373873T1 (de) Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren
ATE462198T1 (de) Zusammensetzung zur reinigung nach einer chemisch-mechanischen planarisierung
WO2001040425A3 (en) Post chemical-mechanical planarization (cmp) cleaning composition
DE60030877D1 (de) Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen
TW200706647A (en) Aqueous cleaner with low metal etch rate
DE69529705T2 (de) Verfahren und Lösung zur Reinigung eines Substrats von einer Metallkontamination
EP1446460A4 (de) Kupferhaltiges wässriges reinigungsmittel sowie spezieller korrosionsinhibitor zur abreinigung von anorganischen resten von halbleitersubstrat
ATE244751T1 (de) Reinigungsnachbehandlung
ATE376201T1 (de) Ablös- und reinigungszusammensetzungen für die mikroelektronik
CA2223384A1 (en) Improved compositions for and methods of cleaning and disinfecting hard surfaces
AR051419A1 (es) Metodo de limpieza de contenedor para reciclar
NO20055662D0 (no) Anvendelse av kvaternaere ammoniumkarbonater og bikarbonater som korrosjonsbeskyttende midler, metodefor a hindre korrosjon og antikorrosive belegg somanvender disse midlene
ZA200700653B (en) Cleaning compositions for microelectronics substrates
ATE369623T1 (de) Alkalische reinigungsmittel zur reinigung nach einer chemisch-mechanischen planarisierung
EP0982765A3 (de) Verfahren zur Reinigung eines Halbleitersubstrats
TW200740426A (en) Composition for soft contact lens and adsorption suppressing method
AU4189599A (en) Silicate-containing alkaline compositions for cleaning microelectronic substrates
EP1541532A4 (de) ABWASSERBEHANDLUNGSVERFAHREN NACH DER BELEBTSCHLAMM-METHODE MIT LINIENZERSTûUBUNGSBEHANDLUNG
ATE307873T1 (de) Verfahren zum reinigen von harten oberflächen mit ein bleichmittel enthaltendes flussiges reinigungsmittel
NO961014D0 (no) Metallblanding med en sur rengjöringslösning som inneholder ioner av sjeldne jordarter
GB2422546A (en) Bovine germicide application device
EP1535979A3 (de) Zusammensetzungen und Verfahren zum chemisch-mechanischen Polieren von Silika unf Siliziumnitrid
DE602004008863D1 (de) Zusammensetzung und Verfahren zur Behandlung von Halbleitersubstraten
MY123005A (en) Method and apparatus for treating wastewater containing organic sulfur compounds
AU2002362996A1 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties