KR960002614A - 웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법 - Google Patents

웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법 Download PDF

Info

Publication number
KR960002614A
KR960002614A KR1019950014782A KR19950014782A KR960002614A KR 960002614 A KR960002614 A KR 960002614A KR 1019950014782 A KR1019950014782 A KR 1019950014782A KR 19950014782 A KR19950014782 A KR 19950014782A KR 960002614 A KR960002614 A KR 960002614A
Authority
KR
South Korea
Prior art keywords
substrate
amphoteric surfactant
ammonium hydroxide
amphoteric
group
Prior art date
Application number
KR1019950014782A
Other languages
English (en)
Other versions
KR0177279B1 (ko
Inventor
엠. 일라디 조셉
슈바르콥프 죠오지
Original Assignee
안토니 피에르지오바니, 제이알
밀린크로드 베이커, 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 안토니 피에르지오바니, 제이알, 밀린크로드 베이커, 인크 filed Critical 안토니 피에르지오바니, 제이알
Publication of KR960002614A publication Critical patent/KR960002614A/ko
Application granted granted Critical
Publication of KR0177279B1 publication Critical patent/KR0177279B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C11D1/90—Betaines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C11D1/92—Sulfobetaines ; Sulfitobetaines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

본 발명은 수성, 금속 이온 없는 기재와 양쪽성 계면활성제 그리고 임의로 금속 착화제 및 프로필렌 글리콜에테르 유기 용매로 구성되는 세척 조성물로 웨이퍼 기판을 접촉시키는 것에 의해 웨이퍼의 평활도를 유지하면서 웨이퍼 기판의 금속 오염물을 세척하는 방법에 관한 것이다.

Description

웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (15)

  1. 수성, 금속 이온 없는 기재 및 양쪽성 계면활성제로 구성된 알칼리성 세척 조성물로 웨이퍼 표면을 세척하기에 충분한 온도와 시간으로 웨이퍼 표면을 접촉시키는 것으로 구성되는, 웨이퍼의 평활도를 유지하면서 금속 오염물을 제거하기 위해 마이크로일렉트로닉스 웨이퍼 표면을 세척하는 방법.
  2. 제1항에 있어서, 알칼리성 세척용액은 0.05 내지 10중량%의 금속 이온 없는 기재와 0.001 내지 10중량%의 양쪽성 계면활성제로 구성되는 것을 특징으로 하는 방법.
  3. 제1항 또는 제2항에 있어서, 금속 이온 없는 기재는 수산화 암모늄 또는 알킬 그룹이 비치환되거나 히드록시 또는 알콕시라디칼로 치환된 알킬그룹인 테트라알킬 암모늄의 수산화물 및 이들의 혼합물로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  4. 제3항에 있어서, 금속 이온 없는 기재는 테트라메틸 암모늄 히드록사이드 테트라에틸암모늄 히드록사이드, 트리메틸-2-히드록시에틸 암모늄 히드록사이드, 수산화암모늄 및 이들의 혼합물로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  5. 제1항 또는 제2항에 있어서, 금속 이온 없는 기재는 알칸올아민 또는 구아니딘인것을 특징으로 하는 방법.
  6. 제1항 내지 제5항중의 어느 한 항에 있어서, 양쪽성 계면활성제는 베타인, 술포베타인, 아미노카르복실산 유도체, 이미노이가산, 아민옥사이드, 플루오로알킬 술포네이트 및 불소화된 알킬 양쪽성물질, 및 이들의 혼합물로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  7. 제6항에 있어서, 양쪽성 계면활성제는 알킬 베타인, 아미도알킬 베타인, 알킬 술포베타인, 암포글리시네이트, 암포프로피오네이트, 암포디글리시네이트, 암포디프로피오네이트 알콕시알킬 이미노이가산, 알킬 아민옥사이드, 알킬아미도 알킬아민 옥사이드 및 불소화된 알킬 양쪽성 물질로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  8. 제7항에 있어서, 양쪽성 계면활성제는 코코아미도 프로필 베타인, 코코아미도프로필 디메틸 베타인, 코코아미도프로필 히드록시 술타인, 카프릴로암포디프로피오네이트, 코코아미도 디프로피오네이트, 코코암푸프로피오네이트, 코코암포히드록시에틸 디프로 피오네이트 코코아미도프로필아민 옥사이드 및 코코아민 옥사이드 및 불소화된 알킬 양쪽성 물질로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  9. 제8항에 있어서, 양쪽성 계면활성제를 카프릴로암포디프로피오네이트 및 코코암포히드록시에틸 프로피오네이트로 구성된 그룹에서 선택돈 것임을 특징으로 하는 방법.
  10. 제1항 내지 제9항중의 어느 한 항에 있어서, 알칼리성 세척 용액은 5중량% 이하의 금속킬레이트제 및 5중량% 이하의 프로필렌 글리콜 에테르 유기용매로 더 구성되는 것을 특징으로 하는 방법.
  11. 제10항에 있어서, 금속 이온 없는 기재는 수산화암모늄 및 테트라알킬암모늄의 수산화물로 구성되고, 양쪽성 계면활성제는 코코암포히드록시에틸 프로피오네이트로 구성되고 금속킬레이트제는 에틸렌디아민테트라아세트산으로 구성되며 프로필렌 글리콜 에테르 유기용매는 n-부톡시프로판올로 구성되는 것을 특징으로 하는 방법.
  12. 0.05 내지 25중량%의 수성, 금속 이온 없는 기재, 0.001 내지 10중량% 양쪽성 계면활성제, 제0.05 내지 5중량%의 금속 킬레이트제 및 0.05 내지 5중량%의 프로필렌 글리콜 에테르 유기용매로 구성되는 웨이퍼의 평활도를 유지하면서 마이크로일레트로닉스 웨이퍼 표면을 세척하기 위한 과산화수소가 없는 알칼리성 세척용액.
  13. 제12항에 있어서, 금속 이온 없는 기재는 수산화 암모늄 또는 알킬 그룹이 비치환되거나 히드록시 또는 알콕시라디칼로 치환된 알킬그룹인 테트라알킬 암모늄의 수산화물 및 이들의 혼합물로 구성된 그룹에서 선택돈 것이고 양쪽성 계면활성제는 베타인, 술포베타인, 아미노카르복실산유도체, 이미노이가산, 아민옥사이드, 플루오로알킬 술포네이트 및 불소화된 알킬 양쪽성물질, 및 이들의 혼합물로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  14. 제13항에 있어서, 금속 이온 없느 기재는 테트라메틸 암모늄 히드록사이드 테트라에탈암모늄 히드록사이드, 드리메틸-2-히드록시에틸 암모늄 히드록사이드, 수산화암모늄 및 이들의 혼합물로 구성된 그룹에서 선택된 것이고 양쪽성 계면활성제는 코코아미도 프로필 베타인, 코코아미도프로필 디메틸 베타인, 코코아미도프로필 히드록시 술타인, 카프릴로암포디프로피오네이트, 코코아미도디프로피오네이트, 코코암포프로피오네이트, 코코암히드록시에틸 디프로피오네이트 코코아미도프로필아민 옥사이드 및 코코아민 옥사이드 및 불소화된 알킬 양쪽성 물질로 구성된 그룹에서 선택된 것임을 특징으로 하는 방법.
  15. 제3항에 있어서, 금속 이온 없는 기재는 수산화암모늄 및 테트라알킬암모늄의 수산화물로 구성되고, 양쪽성 계면활성제는 코코암포히드록시에틸 프로피오네이트로 구성되고 금속킬레이트제는 에틸렌디아민테트라아세트산으로 구성되며 프로필렌 글리콜 에테르 유기용매는 n-부톡시 프로판올로 구성되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950014782A 1994-06-23 1995-06-05 웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법 KR0177279B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/264,858 1994-06-23
US08/264,858 US5498293A (en) 1994-06-23 1994-06-23 Cleaning wafer substrates of metal contamination while maintaining wafer smoothness

Publications (2)

Publication Number Publication Date
KR960002614A true KR960002614A (ko) 1996-01-26
KR0177279B1 KR0177279B1 (ko) 1999-04-15

Family

ID=23007910

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950014782A KR0177279B1 (ko) 1994-06-23 1995-06-05 웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법

Country Status (11)

Country Link
US (1) US5498293A (ko)
EP (1) EP0690483B1 (ko)
JP (1) JP2670989B2 (ko)
KR (1) KR0177279B1 (ko)
AT (1) ATE233431T1 (ko)
CA (1) CA2146680C (ko)
DE (1) DE69529705T2 (ko)
ES (1) ES2189814T3 (ko)
IL (1) IL113037A (ko)
MY (1) MY112614A (ko)
TW (1) TW311934B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510440B1 (ko) * 1997-08-20 2005-10-21 삼성전자주식회사 세정용액및이를이용한반도체소자의세정방법
KR20160025450A (ko) 2014-08-26 2016-03-08 이영일 로고 착탈식 모자
KR20160072082A (ko) 2015-04-16 2016-06-22 이영일 로고 착탈식 모자

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
FR2722511B1 (fr) * 1994-07-15 1999-04-02 Ontrak Systems Inc Procede pour enlever les metaux dans un dispositif de recurage
RU2052868C1 (ru) * 1995-02-03 1996-01-20 Акционерное общество "Научно-производственное предприятие "Сапфир" Состав раствора для очистки поверхности (типа "полифункционал")
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5603849A (en) * 1995-11-15 1997-02-18 Micron Technology, Inc. Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid
US5679169A (en) * 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6640816B2 (en) * 1999-01-22 2003-11-04 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US5645737A (en) * 1996-02-21 1997-07-08 Micron Technology, Inc. Wet clean for a surface having an exposed silicon/silica interface
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
KR100207469B1 (ko) * 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
AU3482997A (en) * 1996-06-26 1998-01-14 Church & Dwight Company, Inc. Aqueous cleaning composition for removing flux and method of use
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US5851980A (en) * 1996-07-10 1998-12-22 S. C. Johnson & Sons, Inc. Liquid hard surface cleaner comprising a monocarboxylate acid and an ampholytic surfactant having no carboxyl groups
US5944908A (en) * 1996-10-10 1999-08-31 Henkel Corporation Cleaning compositions and processes suitable for replacing grit blasting to clean metal mold surfaces for plastics
US6265781B1 (en) 1996-10-19 2001-07-24 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6095161A (en) * 1997-01-17 2000-08-01 Micron Technology, Inc. Processing and post-processing compositions and methods of using same
US5935869A (en) * 1997-07-10 1999-08-10 International Business Machines Corporation Method of planarizing semiconductor wafers
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US6465403B1 (en) 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
JP3111979B2 (ja) * 1998-05-20 2000-11-27 日本電気株式会社 ウエハの洗浄方法
US5964953A (en) * 1998-05-26 1999-10-12 Memc Electronics Materials, Inc. Post-etching alkaline treatment process
US6280527B1 (en) 1998-06-12 2001-08-28 International Business Machines Corporation Aqueous quaternary ammonium hydroxide as a screening mask cleaner
EP0982765B1 (en) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Cleaning method of semiconductor substrate
US6468909B1 (en) 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
JP3003684B1 (ja) * 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
US5989359A (en) * 1998-10-09 1999-11-23 Berbel; Jose A. Method for drying objects with fluids
JP3279532B2 (ja) * 1998-11-06 2002-04-30 日本電気株式会社 半導体装置の製造方法
US6127282A (en) * 1998-11-12 2000-10-03 Advanced Micro Devices, Inc. Method for removing copper residue from surfaces of a semiconductor wafer
US6544842B1 (en) 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
GB2349892A (en) * 1999-05-13 2000-11-15 Warwick Internat Group Ltd Metal cleaning
US6277799B1 (en) * 1999-06-25 2001-08-21 International Business Machines Corporation Aqueous cleaning of paste residue
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6358788B1 (en) * 1999-08-30 2002-03-19 Micron Technology, Inc. Method of fabricating a wordline in a memory array of a semiconductor device
US6537381B1 (en) * 1999-09-29 2003-03-25 Lam Research Corporation Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR100356987B1 (ko) * 2000-01-22 2002-10-18 엘지.필립스 엘시디 주식회사 열경화성 수지 제거용 조성물
US6417147B2 (en) * 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6589356B1 (en) * 2000-09-29 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd Method for cleaning a silicon-based substrate without NH4OH vapor damage
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6525009B2 (en) 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
US6991634B2 (en) 2001-05-23 2006-01-31 Pentax Corporation Clip device of endoscope
US20040011991A1 (en) * 2001-06-13 2004-01-22 Markle Richard J. Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US20030224958A1 (en) * 2002-05-29 2003-12-04 Andreas Michael T. Solutions for cleaning polished aluminum-containing layers
JP4304154B2 (ja) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
DE602004009584T2 (de) * 2003-06-27 2008-08-07 Interuniversitair Microelektronica Centrum (Imec) Halbleiterreinigungslösung
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
BRPI0416067A (pt) * 2003-10-29 2007-01-02 Mallinckrodt Baker Inc removedores alcalinos de resìduo de cinza/gravação pós-plasma e composições de descascamento de fotorresistes contendo inibidores de corrosão de haleto de metal
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
JP4632290B2 (ja) * 2004-03-23 2011-02-16 日本碍子株式会社 窒化アルミニウム製サセプターの洗浄方法
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur
WO2006009668A1 (en) * 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
SG158920A1 (en) * 2005-01-27 2010-02-26 Advanced Tech Materials Compositions for processing of semiconductor substrates
KR20070087702A (ko) * 2005-04-04 2007-08-29 주식회사 하이닉스반도체 금속 오염 억제를 위한 반도체웨이퍼의 세정방법
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
EP2428557A1 (en) * 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20080116170A1 (en) * 2006-11-17 2008-05-22 Sian Collins Selective metal wet etch composition and process
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
JP2007186715A (ja) * 2007-03-30 2007-07-26 Nippon Shokubai Co Ltd 電子部品用洗浄剤
US20080245390A1 (en) * 2007-04-03 2008-10-09 Lam Research Corporation Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
EP2580303B1 (en) 2010-06-09 2018-08-29 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
EP2557147B1 (en) 2011-08-09 2015-04-01 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
WO2020179819A1 (ja) * 2019-03-05 2020-09-10 日産化学株式会社 洗浄剤組成物及び洗浄方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS59109599A (ja) * 1982-12-16 1984-06-25 株式会社東芝 薬品容器の洗浄方法
JPS63114132A (ja) * 1986-10-31 1988-05-19 Showa Denko Kk 表面処理液
JP2569574B2 (ja) * 1987-07-09 1997-01-08 三菱瓦斯化学株式会社 半導体処理剤
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
JPH0393229A (ja) * 1989-09-05 1991-04-18 Pure Retsukusu:Kk 半導体用ウェーハの清浄化方法
US5207866A (en) * 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
DE69231971T2 (de) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
EP0540261B1 (en) * 1991-10-31 1997-05-28 STMicroelectronics, Inc. Process of removing polymers in semiconductor vias
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
DE69333877T2 (de) * 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
AU2494092A (en) * 1992-09-03 1994-03-29 Circuit Chemical Products Gmbh Cleaning-agent mixture for cleaning printed circuits and a method of cleaning such circuits
US5350533A (en) * 1993-01-26 1994-09-27 General Atomics International Services Corporation Pavement deicer compositions
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510440B1 (ko) * 1997-08-20 2005-10-21 삼성전자주식회사 세정용액및이를이용한반도체소자의세정방법
KR20160025450A (ko) 2014-08-26 2016-03-08 이영일 로고 착탈식 모자
KR20160072082A (ko) 2015-04-16 2016-06-22 이영일 로고 착탈식 모자

Also Published As

Publication number Publication date
JPH0817778A (ja) 1996-01-19
IL113037A (en) 1999-06-20
TW311934B (ko) 1997-08-01
IL113037A0 (en) 1995-06-29
EP0690483A2 (en) 1996-01-03
EP0690483B1 (en) 2003-02-26
ES2189814T3 (es) 2003-07-16
KR0177279B1 (ko) 1999-04-15
ATE233431T1 (de) 2003-03-15
JP2670989B2 (ja) 1997-10-29
DE69529705D1 (de) 2003-04-03
DE69529705T2 (de) 2004-01-15
US5498293A (en) 1996-03-12
CA2146680A1 (en) 1995-12-24
EP0690483A3 (en) 1998-09-09
MY112614A (en) 2001-07-31
CA2146680C (en) 2002-12-10

Similar Documents

Publication Publication Date Title
KR960002614A (ko) 웨이퍼의 평활도를 유지하면서 웨이퍼기판의 금속오염물을 세척하는 방법
KR100748410B1 (ko) 기판표면 세정액 및 세정방법
US6417147B2 (en) Cleaning agent composition, method for cleaning and use thereof
WO2001035743B1 (en) Fast acting disinfectant and cleaner
US6943139B2 (en) Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
WO2006039090A2 (en) Solutions for cleaning silicon semiconductors or silicon oxides
JP2006503972A (ja) 半導体デバイスを洗浄するための水性リン酸組成物
CA2330747A1 (en) Silicate-containing alkaline compositions for cleaning microelectronic substrates
ATE420941T1 (de) Chemische spülzusammensetzung
MY146827A (en) Aqueous cleaning composition for removing residues and method using same
KR960009041A (ko) 세정제 및 반도체 웨이퍼를 세정하는 방법
KR20090060103A (ko) 알파-하이드록시카보닐 화합물/아민 또는 암모니아 반응의올리고머 또는 중합체 접합체 물질을 함유하는 불화물-함유포토레지스트 박리제 또는 잔류물 제거용 세정 조성물
JP3624809B2 (ja) 洗浄剤組成物、洗浄方法及びその用途
KR20080032843A (ko) 유리세정 조성물
KR20040035368A (ko) 반도체 및 ｔｆｔ-ｌｃｄ용 세정제 조성물
MX9703154A (es) Composiciones limpiadoras de superficie dura que comprenden aminas protonadas y agentes tensioactivos de oxido de amina.
WO2009073589A1 (en) Fluoride-free photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
JP2001284308A (ja) 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
KR20040037643A (ko) 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법
KR950003429A (ko) 드라이크리닝세정제의 조성물
JP2007053388A (ja) 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
KR100520397B1 (ko) 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법
JP2006339677A (ja) 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
KR940002968A (ko) 반도체기판의 표면세정방법
KR20090008521A (ko) 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121105

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20131106

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20141105

Year of fee payment: 17

EXPY Expiration of term