KR960009041A - 세정제 및 반도체 웨이퍼를 세정하는 방법 - Google Patents
세정제 및 반도체 웨이퍼를 세정하는 방법 Download PDFInfo
- Publication number
- KR960009041A KR960009041A KR1019950026371A KR19950026371A KR960009041A KR 960009041 A KR960009041 A KR 960009041A KR 1019950026371 A KR1019950026371 A KR 1019950026371A KR 19950026371 A KR19950026371 A KR 19950026371A KR 960009041 A KR960009041 A KR 960009041A
- Authority
- KR
- South Korea
- Prior art keywords
- water
- soluble
- semiconductor wafer
- cleaner
- succinic acid
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 7
- 238000000034 method Methods 0.000 title claims abstract 5
- 238000004140 cleaning Methods 0.000 title claims abstract 3
- 235000012431 wafers Nutrition 0.000 title abstract 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims abstract 10
- 150000001875 compounds Chemical class 0.000 claims abstract 6
- 239000001384 succinic acid Substances 0.000 claims abstract 5
- 239000004094 surface-active agent Substances 0.000 claims abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- 239000003599 detergent Substances 0.000 claims 4
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 239000012459 cleaning agent Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
이 발명은 세정제와 반도체웨이퍼(semiconductor wafers)를 세정하는 방법에 대한 것이다. 그 수용성세정제는 PH 1∼5, 바람직하게는 PH 1∼3을 가지며, 적어도 하나의 계면활성제와, 석신산 및 그 유도체로 구성되는 일군의 화합물에 속하는 적어도 하나의 화합물을 포함한다. 반도체웨이퍼를 세정하기 위하여, 세정제 박층필름은 그 반도체웨이퍼의 측면상에서 바람직하게는 기계적공구를 사용하여 형성한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 적어도 하나의 계면활성제와, 석신산 및 그 유도체로 구성되는 일군(a group)의 화합물에 속하는 적어도 하나의 화합물을 포함하며, PH 1∼5를 가짐을 특징으로하는 반도체웨이퍼를 세정하는 수용성 세정제.
- 제1항에 있어서, 그 세정제중 계면활성제 성분은 0.01∼1wt%를 가짐을 특징으로 하는 수용성 세정제.
- 제1항에 있어서, 그 수용성 세정제에는 석신산 및/또는 설포석신산을 포함함을 특징으로하는 수용성 세정제.
- 제1항에 있어서, 그 수용성세정제에는 추가로 염산을 포함함을 특징으로하는 수용성 세정제.
- 반도체웨이퍼 측면상에 적어도 하나의 계면활성제와 석신산 및 그 유로체로 구성되는 일군의 화합물에 속하는 적어도 하나의 화합물을 포함하며 PH 1∼5를 가진 수용성세정제 필름을 생성함을 특징으로하는 반도체웨이퍼를 세정하는방법.
- 제5항에 있어서, 그 필름은 기계적공구에 의해 형성됨을 특징으로하는 반도체웨이퍼를 세정하는방법.
- 제5항에 있어서, 그 수용성세정제에는 석신산 및/또는 설포석신산을 포함함을 특징으로하는 반도체웨이퍼를 세정하는방법.
- 제5항에 있어서, 그 수용성세정제에는 염산을 추가로 포함함을 특징으로하는 반도체데이터를 세정하는방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE94-P4430217.7 | 1994-08-25 | ||
DE4430217A DE4430217A1 (de) | 1994-08-25 | 1994-08-25 | Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben |
DE95-P19515024.4 | 1995-04-24 | ||
DE19515024A DE19515024A1 (de) | 1995-04-24 | 1995-04-24 | Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960009041A true KR960009041A (ko) | 1996-03-22 |
KR0157702B1 KR0157702B1 (en) | 1998-12-01 |
Family
ID=25939522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950026371A KR0157702B1 (en) | 1994-08-25 | 1995-08-24 | Cleaning agent and method for cleaning semiconductor wafers |
Country Status (8)
Country | Link |
---|---|
US (1) | US5695572A (ko) |
EP (1) | EP0698917B1 (ko) |
JP (1) | JP2709452B2 (ko) |
KR (1) | KR0157702B1 (ko) |
CN (1) | CN1057330C (ko) |
DE (1) | DE59506147D1 (ko) |
FI (1) | FI953947A (ko) |
TW (1) | TW330211B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3693441B2 (ja) * | 1996-12-27 | 2005-09-07 | 富士通株式会社 | 記録媒体の製造方法 |
US6200896B1 (en) | 1998-01-22 | 2001-03-13 | Cypress Semiconductor Corporation | Employing an acidic liquid and an abrasive surface to polish a semiconductor topography |
US6232231B1 (en) | 1998-08-31 | 2001-05-15 | Cypress Semiconductor Corporation | Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect |
US5972124A (en) * | 1998-08-31 | 1999-10-26 | Advanced Micro Devices, Inc. | Method for cleaning a surface of a dielectric material |
JP4516176B2 (ja) | 1999-04-20 | 2010-08-04 | 関東化学株式会社 | 電子材料用基板洗浄液 |
US6230720B1 (en) | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
JP3396030B2 (ja) * | 2001-04-27 | 2003-04-14 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US6969684B1 (en) | 2001-04-30 | 2005-11-29 | Cypress Semiconductor Corp. | Method of making a planarized semiconductor structure |
US6828678B1 (en) | 2002-03-29 | 2004-12-07 | Silicon Magnetic Systems | Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer |
US6905974B2 (en) * | 2002-08-08 | 2005-06-14 | Micron Technology, Inc. | Methods using a peroxide-generating compound to remove group VIII metal-containing residue |
US7077975B2 (en) * | 2002-08-08 | 2006-07-18 | Micron Technology, Inc. | Methods and compositions for removing group VIII metal-containing materials from surfaces |
JP2005535784A (ja) * | 2002-08-19 | 2005-11-24 | 伊默克化學科技股▲ふん▼有限公司 | 清浄液 |
KR100495661B1 (ko) * | 2002-10-01 | 2005-06-16 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR20050065312A (ko) * | 2003-12-25 | 2005-06-29 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체웨이퍼의 세정방법 |
JP4613744B2 (ja) * | 2005-08-10 | 2011-01-19 | 株式会社Sumco | シリコンウェーハの洗浄方法 |
US20080318343A1 (en) * | 2007-06-25 | 2008-12-25 | Krishna Vepa | Wafer reclaim method based on wafer type |
US7775856B2 (en) | 2007-09-27 | 2010-08-17 | Applied Materials, Inc. | Method for removal of surface films from reclaim substrates |
CN102228892A (zh) * | 2011-04-11 | 2011-11-02 | 李莉 | 一种玻璃清洗池 |
CN102211880B (zh) * | 2011-04-11 | 2013-01-02 | 李莉 | 一种玻璃清洗设备 |
CN103882444A (zh) * | 2012-12-19 | 2014-06-25 | 安集微电子(上海)有限公司 | 一种清洗液及其应用 |
CN103013711A (zh) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | 一种去除晶体硅片金属离子污染的清洗液及其清洗工艺 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3915633A (en) * | 1972-09-21 | 1975-10-28 | Colgate Palmolive Co | Complexing acid pre-wash composition and method |
US4009299A (en) * | 1975-10-22 | 1977-02-22 | Motorola, Inc. | Tin strip formulation for metal to glass seal diodes |
US4014715A (en) * | 1975-12-08 | 1977-03-29 | General Electric Company | Solder cleaning and coating composition |
US4376057A (en) * | 1980-11-26 | 1983-03-08 | International Business Machines Corporation | Etchant composition and use thereof |
JPS58204100A (ja) * | 1982-05-24 | 1983-11-28 | ダイキン工業株式会社 | 表面清浄化用組成物 |
JPS59196385A (ja) * | 1983-04-23 | 1984-11-07 | Shinko Electric Ind Co Ltd | 化学研摩液 |
US4714517A (en) * | 1986-05-08 | 1987-12-22 | National Semiconductor Corporation | Copper cleaning and passivating for tape automated bonding |
JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
US5061393A (en) * | 1990-09-13 | 1991-10-29 | The Procter & Gamble Company | Acidic liquid detergent compositions for bathrooms |
DE4209865C2 (de) * | 1992-03-26 | 1994-06-30 | Wacker Chemitronic | Verfahren zur Verbesserung der Wirksamkeit wässeriger Reinigungsmittel zum Entfernen metallhaltiger Rückstände auf Halbleiteroberflächen |
US5397397A (en) * | 1992-09-18 | 1995-03-14 | Crestek, Inc. | Method for cleaning and drying of metallic and nonmetallic surfaces |
-
1995
- 1995-08-10 US US08/513,271 patent/US5695572A/en not_active Expired - Fee Related
- 1995-08-12 TW TW084108422A patent/TW330211B/zh active
- 1995-08-23 FI FI953947A patent/FI953947A/fi unknown
- 1995-08-24 DE DE59506147T patent/DE59506147D1/de not_active Expired - Fee Related
- 1995-08-24 KR KR1019950026371A patent/KR0157702B1/ko not_active IP Right Cessation
- 1995-08-24 EP EP95113289A patent/EP0698917B1/de not_active Expired - Lifetime
- 1995-08-25 JP JP7238995A patent/JP2709452B2/ja not_active Expired - Lifetime
- 1995-08-25 CN CN95115577A patent/CN1057330C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0698917B1 (de) | 1999-06-09 |
KR0157702B1 (en) | 1998-12-01 |
FI953947A0 (fi) | 1995-08-23 |
TW330211B (en) | 1998-04-21 |
JPH08100195A (ja) | 1996-04-16 |
CN1124763A (zh) | 1996-06-19 |
CN1057330C (zh) | 2000-10-11 |
FI953947A (fi) | 1996-02-26 |
JP2709452B2 (ja) | 1998-02-04 |
US5695572A (en) | 1997-12-09 |
DE59506147D1 (de) | 1999-07-15 |
EP0698917A1 (de) | 1996-02-28 |
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Payment date: 20010719 Year of fee payment: 4 |
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