ATE340244T1 - Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen - Google Patents

Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen

Info

Publication number
ATE340244T1
ATE340244T1 AT00984560T AT00984560T ATE340244T1 AT E340244 T1 ATE340244 T1 AT E340244T1 AT 00984560 T AT00984560 T AT 00984560T AT 00984560 T AT00984560 T AT 00984560T AT E340244 T1 ATE340244 T1 AT E340244T1
Authority
AT
Austria
Prior art keywords
cleaning composition
removal
plasma etching
etching residue
corrosive cleaning
Prior art date
Application number
AT00984560T
Other languages
English (en)
Inventor
Kenji Honda
Michelle Elderkin
Vincent Leon
Original Assignee
Fujifilm Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials filed Critical Fujifilm Electronic Materials
Application granted granted Critical
Publication of ATE340244T1 publication Critical patent/ATE340244T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C11D2111/22—
AT00984560T 1999-11-15 2000-10-20 Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen ATE340244T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/439,469 US6413923B2 (en) 1999-11-15 1999-11-15 Non-corrosive cleaning composition for removing plasma etching residues

Publications (1)

Publication Number Publication Date
ATE340244T1 true ATE340244T1 (de) 2006-10-15

Family

ID=23744827

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00984560T ATE340244T1 (de) 1999-11-15 2000-10-20 Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen

Country Status (8)

Country Link
US (3) US6413923B2 (de)
EP (1) EP1230334B1 (de)
JP (1) JP3871257B2 (de)
KR (1) KR100736061B1 (de)
AT (1) ATE340244T1 (de)
DE (1) DE60030877T2 (de)
TW (1) TWI230733B (de)
WO (1) WO2001036578A1 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69927181T2 (de) * 1998-12-04 2006-07-20 The Farrow System Ltd., Great Yarmouth Methode um überzüge von oberflächen zu entfernen
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US7396806B2 (en) 2000-06-16 2008-07-08 Kao Corporation Semiconductor cleaner comprising a reducing agent, dispersant, and phosphonic acid-based chelant
US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
JP2002303993A (ja) * 2001-04-04 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002367956A (ja) * 2001-04-06 2002-12-20 Seiko Epson Corp 半導体装置の電極パッド及びその製造方法
KR100416794B1 (ko) * 2001-04-12 2004-01-31 삼성전자주식회사 금속 건식 에쳐 부품의 세정제 및 세정 방법
JP4945857B2 (ja) 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
JP2003007680A (ja) * 2001-06-22 2003-01-10 Kishimoto Sangyo Co Ltd ドライエッチング残渣除去剤
US6627546B2 (en) * 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
JP4583678B2 (ja) * 2001-09-26 2010-11-17 富士通株式会社 半導体装置の製造方法及び半導体装置用洗浄液
US7563753B2 (en) * 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
WO2003091376A1 (en) * 2002-04-24 2003-11-06 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
WO2003091377A1 (en) 2002-04-25 2003-11-06 Arch Speciality Chemicals, Inc. Non-corrosive cleaning compositions for removing etch residues
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US6610599B1 (en) * 2002-06-19 2003-08-26 Lucent Technologies Inc. Removal of metal veils from via holes
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US7080545B2 (en) * 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
US20050032657A1 (en) * 2003-08-06 2005-02-10 Kane Sean Michael Stripping and cleaning compositions for microelectronics
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
CN1690120A (zh) * 2004-03-01 2005-11-02 三菱瓦斯化学株式会社 具有高减震能力的树脂组合物
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR100629416B1 (ko) * 2004-07-28 2006-09-28 주식회사 삼양이엠에스 레지스트 수계 박리액 조성물
JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
JP4810928B2 (ja) * 2004-08-18 2011-11-09 三菱瓦斯化学株式会社 洗浄液および洗浄法。
US7718009B2 (en) 2004-08-30 2010-05-18 Applied Materials, Inc. Cleaning submicron structures on a semiconductor wafer surface
KR101331747B1 (ko) * 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 기판 처리 조성물
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
TW200709294A (en) * 2005-06-13 2007-03-01 Advanced Tech Materials Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
US7879782B2 (en) * 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
WO2007045268A1 (en) * 2005-10-21 2007-04-26 Freescale Semiconductor, Inc. Method for removing etch residue and chemistry therefor
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070191243A1 (en) * 2006-02-13 2007-08-16 General Chemical Performance Products, Llc Removal of silica based etch residue using aqueous chemistry
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR101752684B1 (ko) 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
EP2586855B1 (de) * 2008-12-23 2016-06-08 The Procter & Gamble Company Flüssiges saures Reinigungsmittel für harte Oberflächen
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5508130B2 (ja) 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
JP5508158B2 (ja) * 2010-06-22 2014-05-28 富士フイルム株式会社 洗浄組成物、洗浄方法、及び、半導体装置の製造方法
JP5674373B2 (ja) * 2010-07-30 2015-02-25 富士フイルム株式会社 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
TWI491729B (zh) * 2011-08-31 2015-07-11 Dongwoo Fine Chem Co Ltd 清洗組成物
KR101999641B1 (ko) * 2011-10-05 2019-07-12 아반토 퍼포먼스 머티리얼즈, 엘엘씨 구리/아졸 중합체 억제를 갖는 마이크로일렉트로닉 기판 세정 조성물
CN103513523A (zh) * 2013-09-26 2014-01-15 杨桂望 光刻胶清洗剂
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
CN105710066B (zh) * 2016-03-16 2018-03-13 中锗科技有限公司 一种去除太阳能锗单晶片抛光残留药剂的方法
CN107541735B (zh) * 2016-06-24 2022-01-21 三星显示有限公司 用于去除氧化物的清洗组合物及使用该清洗组合物的清洗方法
CN109385638A (zh) * 2018-12-29 2019-02-26 天津市顺超有限公司 一种铝洗剂及其制备和使用方法
US11590631B2 (en) 2019-08-14 2023-02-28 Clean Blast Systems, LLC Wet abrasive blast machine with remote control rinse cycle

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582401A (en) 1967-11-15 1971-06-01 Mallinckrodt Chemical Works Photosensitive resist remover compositions and methods
JPS567360B2 (de) 1972-06-05 1981-02-17
JPS5247755B2 (de) 1973-10-05 1977-12-05
US3975215A (en) 1973-10-10 1976-08-17 Amchem Products, Inc. Cleaner for tin plated ferrous metal surfaces
DE2447225C2 (de) 1974-10-03 1983-12-22 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Ablösen von positiven Photolack
US3962497A (en) 1975-03-11 1976-06-08 Oxy Metal Industries Corporation Method for treating polymeric substrates prior to plating
JPS5217901A (en) 1975-07-31 1977-02-10 Mitsubishi Chem Ind Developer for lithographic press plate
US3962108A (en) 1975-11-03 1976-06-08 Kti Chemical, Inc. Chemical stripping solution
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
CA1075854A (en) 1976-08-16 1980-04-22 Charles W. Simons Aerosol propellants for personal products
US4169068A (en) 1976-08-20 1979-09-25 Japan Synthetic Rubber Company Limited Stripping liquor composition for removing photoresists comprising hydrogen peroxide
JPS56115368A (en) 1980-02-15 1981-09-10 San Ei Chem Ind Ltd Releasing agent of photosensitive polymer
US4304681A (en) 1980-09-15 1981-12-08 Shipley Company, Inc. Novel stripping composition for positive photoresists and method of using same
US4395479A (en) 1981-09-23 1983-07-26 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4428871A (en) 1981-09-23 1984-01-31 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4395348A (en) 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4403029A (en) 1982-09-02 1983-09-06 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4401748A (en) 1982-09-07 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4509989A (en) 1983-03-25 1985-04-09 United States Steel Corporation Cleaning method for removing sulfur containing deposits from coke oven gas lines
GB8313320D0 (en) 1983-05-14 1983-06-22 Ciba Geigy Ag Coating compositions
US4791043A (en) 1983-12-20 1988-12-13 Hmc Patents Holding Co., Inc. Positive photoresist stripping composition
US4659512A (en) 1983-12-21 1987-04-21 Pedro B. Macedo Fixation of dissolved metal species with a complexing agent
DE3501675A1 (de) 1985-01-19 1986-07-24 Merck Patent Gmbh, 6100 Darmstadt Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
JPS6235357A (ja) 1985-08-09 1987-02-16 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
DE3601803A1 (de) 1986-01-22 1987-07-23 Basf Ag Verfahren zur herstellung von waessrigen loesungen von freiem hydroxylamin
US4834912A (en) * 1986-02-13 1989-05-30 United Technologies Corporation Composition for cleaning a gas turbine engine
US4680133A (en) 1986-03-26 1987-07-14 Environmental Management Associates, Inc. Stripping composition containing an amide and a carbonate and use thereof
JPH0721638B2 (ja) 1986-07-18 1995-03-08 東京応化工業株式会社 基板の処理方法
JPS6350838A (ja) 1986-08-21 1988-03-03 Japan Synthetic Rubber Co Ltd 剥離液
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US4775449A (en) 1986-12-29 1988-10-04 General Electric Company Treatment of a polyimide surface to improve the adhesion of metal deposited thereon
EP0301044A4 (de) 1987-02-05 1989-03-29 Macdermid Inc Ätzzusammensetzung für photoreserve.
JPS63208043A (ja) 1987-02-25 1988-08-29 Kanto Kagaku Kk ポジ型フオトレジスト用水溶性剥離液
DE3821231A1 (de) 1987-06-25 1989-01-05 Siemens Ag Entschichterloesung fuer gehaertete positivlacke
JP2553872B2 (ja) 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
US4824763A (en) 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JP2578821B2 (ja) 1987-08-10 1997-02-05 東京応化工業株式会社 ポジ型ホトレジスト用剥離液
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
JP2591626B2 (ja) 1987-09-16 1997-03-19 東京応化工業株式会社 レジスト用剥離液
JPH0769619B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト剥離剤
JPH0769618B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト用剥離剤
JP2631849B2 (ja) 1987-09-30 1997-07-16 ナガセ電子化学 株式会社 剥離剤組成物
IL84255A (en) 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
JPH0727222B2 (ja) 1987-10-28 1995-03-29 日本合成ゴム株式会社 ホトレジスト用剥離液
JPH01133049A (ja) 1987-11-18 1989-05-25 Asahi Glass Co Ltd レジスト剥離剤
US5132038A (en) 1988-04-25 1992-07-21 Macdermid, Incorporated Composition for preparing printed circuit through-holes for metallization
US4830772A (en) 1988-06-10 1989-05-16 Hoechst Celanese Corporation Stripper composition for removal of protective coatings
JPH0638162B2 (ja) 1988-08-11 1994-05-18 工業技術院長 レジスト剥離剤
DE3828513A1 (de) 1988-08-23 1990-03-01 Merck Patent Gmbh Abloesemittel fuer fotoresists
JP2759462B2 (ja) 1988-11-11 1998-05-28 ナガセ電子化学株式会社 水性剥離剤組成物
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
JPH0696793B2 (ja) * 1988-12-20 1994-11-30 三協アルミニウム工業株式会社 アルミニウムの電解着色液
JPH02253265A (ja) 1989-03-28 1990-10-12 Nippon Zeon Co Ltd レジスト剥離剤
DE3928435A1 (de) 1989-08-24 1991-02-28 Schering Ag Verfahren zur direkten metallisierung eines nicht leitenden substrats
US4992108A (en) 1990-01-18 1991-02-12 Ward Irl E Photoresist stripping compositions
US5318640A (en) 1990-01-30 1994-06-07 Henkel Corporation Surface treatment method and composition for zinc coated steel sheet
US5145717A (en) 1990-01-31 1992-09-08 E. I. Du Pont De Nemours And Company Stripping method for removing resist from a printed circuit board
US5102777A (en) 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
US5091103A (en) 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
JP2906590B2 (ja) 1990-06-14 1999-06-21 三菱瓦斯化学株式会社 アルミニウム配線半導体基板の表面処理剤
JP2527268B2 (ja) 1990-09-17 1996-08-21 東京応化工業株式会社 レジスト用剥離剤組成物
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5496491A (en) 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5209858A (en) 1991-02-06 1993-05-11 E. I. Du Pont De Nemours And Company Stabilization of choline and its derivatives against discoloration
US5139607A (en) 1991-04-23 1992-08-18 Act, Inc. Alkaline stripping compositions
DE59203008D1 (de) 1991-04-24 1995-08-31 Ciba Geigy Ag Fliessfähige wässrige Dispersionen von Polycarbonsäure-Korrosionsinhibitoren.
JPH04350660A (ja) 1991-05-28 1992-12-04 Texas Instr Japan Ltd 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法
US5447575A (en) 1991-05-31 1995-09-05 The Dow Chemical Company Degradable chelants having sulfonate groups, uses and compositions thereof
AU1265092A (en) 1991-07-17 1993-02-23 Church & Dwight Company, Inc. Aqueous electronic circuit assembly cleaner and method
US5234506A (en) 1991-07-17 1993-08-10 Church & Dwight Co., Inc. Aqueous electronic circuit assembly cleaner and method
US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
JPH05336371A (ja) * 1992-06-04 1993-12-17 Seiko Epson Corp 画像読み取り装置
EP0662223A1 (de) 1992-09-28 1995-07-12 Ducoa L.P. Photolackentschichtungsverfahren mittels n,n-dimethyl-bis (2-hydroxyethyl) quaternaeren ammonium hydroxiol
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5702631A (en) * 1992-11-24 1997-12-30 Ashland Inc. Aqueous corrosion inhibitor formulations
US5336371A (en) 1993-03-18 1994-08-09 At&T Bell Laboratories Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow
JP3302120B2 (ja) 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
ES2166366T3 (es) * 1993-08-19 2002-04-16 Kao Corp Composicion de detergente germicida-desinfectante.
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
JP3316078B2 (ja) 1994-03-04 2002-08-19 日本表面化学株式会社 レジスト剥離液
US5484518A (en) 1994-03-04 1996-01-16 Shipley Company Inc. Electroplating process
US5417802A (en) 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
JP3074634B2 (ja) 1994-03-28 2000-08-07 三菱瓦斯化学株式会社 フォトレジスト用剥離液及び配線パターンの形成方法
US5545353A (en) 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5472830A (en) 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
US5507978A (en) 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5612304A (en) 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5614324A (en) * 1995-07-24 1997-03-25 Gould Electronics Inc. Multi-layer structures containing a silane adhesion promoting layer
US5648324A (en) 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
DE69711636T2 (de) 1996-08-05 2002-11-07 Procter & Gamble Stabile bahn mit erhöhter dehnbarkeit und herstellungsverfahren
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6245155B1 (en) * 1996-09-06 2001-06-12 Arch Specialty Chemicals, Inc. Method for removing photoresist and plasma etch residues
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US5895781A (en) * 1997-12-22 1999-04-20 S. C. Johnson & Son, Inc. Cleaning compositions for ceramic and porcelain surfaces and related methods
US6361712B1 (en) * 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues

Also Published As

Publication number Publication date
KR100736061B1 (ko) 2007-07-06
KR20020044593A (ko) 2002-06-15
TWI230733B (en) 2005-04-11
US7001874B2 (en) 2006-02-21
US7402552B2 (en) 2008-07-22
DE60030877T2 (de) 2007-04-26
US20060094614A1 (en) 2006-05-04
EP1230334B1 (de) 2006-09-20
EP1230334A4 (de) 2004-08-11
US20020132745A1 (en) 2002-09-19
JP3871257B2 (ja) 2007-01-24
JP2003515254A (ja) 2003-04-22
WO2001036578A1 (en) 2001-05-25
US20010001785A1 (en) 2001-05-24
EP1230334A1 (de) 2002-08-14
DE60030877D1 (de) 2006-11-02
US6413923B2 (en) 2002-07-02

Similar Documents

Publication Publication Date Title
ATE340244T1 (de) Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen
IL138706A0 (en) Acidic composition containing fluoride for removal of photoresists and etch residues
DE60028962D1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
TW200714707A (en) Aqueous cleaning composition for removing residues and method using same
DK1105778T3 (da) Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater
EP1212150A4 (de) Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
HK1078102A1 (en) Aqueous stripping and cleaning composition
TW370691B (en) Method for removing photoresist and plasma etch residues
ATE340243T1 (de) Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren
TW200630482A (en) Aqueous based residue removers comprising fluoride
DE69921350D1 (de) Nicht-korrodierende entfernungs-und reinigungs-zusammensetzung
ATE405622T1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
DE60222532D1 (de) Zusammensetzung zur reinigung nach einem chemischen-mechanischen polierverfahren
DE602007002643D1 (de) pH-gepufferte, wässrige Reinigungszusammensetzung und Verfahren zur Entfernung von Fotolack-Rückständen
WO2004059383A3 (en) Fluoride in supercritical fluid for photoresist and residue removal
IL169438A0 (en) Composition for stripping and cleaning and use thereof
DE60108774D1 (de) Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten
ATE462198T1 (de) Zusammensetzung zur reinigung nach einer chemisch-mechanischen planarisierung
DE60238244D1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
DE602004008863D1 (de) Zusammensetzung und Verfahren zur Behandlung von Halbleitersubstraten
ATE342329T1 (de) Verfahren zum entfernen von haftendem organischem material

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties