DE60028962D1 - Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen - Google Patents
Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungenInfo
- Publication number
- DE60028962D1 DE60028962D1 DE60028962T DE60028962T DE60028962D1 DE 60028962 D1 DE60028962 D1 DE 60028962D1 DE 60028962 T DE60028962 T DE 60028962T DE 60028962 T DE60028962 T DE 60028962T DE 60028962 D1 DE60028962 D1 DE 60028962D1
- Authority
- DE
- Germany
- Prior art keywords
- percent
- weight
- cleaning
- composition
- residues
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title abstract 6
- 238000004140 cleaning Methods 0.000 title abstract 3
- 230000014759 maintenance of location Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002904 solvent Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 150000003857 carboxamides Chemical class 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 150000002222 fluorine compounds Chemical class 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 150000003462 sulfoxides Chemical class 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C11D2111/22—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US304450 | 1999-05-03 | ||
US09/304,450 US6248704B1 (en) | 1999-05-03 | 1999-05-03 | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
PCT/US2000/011892 WO2000066697A1 (en) | 1999-05-03 | 2000-05-02 | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60028962D1 true DE60028962D1 (de) | 2006-08-03 |
DE60028962T2 DE60028962T2 (de) | 2006-12-28 |
Family
ID=23176568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60028962T Expired - Fee Related DE60028962T2 (de) | 1999-05-03 | 2000-05-02 | Zusammensetzungen zum reinigen von substraten von organischen und plasmaätz-rückständen bei halbleiter-vorrichtungen |
Country Status (10)
Country | Link |
---|---|
US (1) | US6248704B1 (de) |
EP (1) | EP1177275B1 (de) |
JP (1) | JP2002543272A (de) |
KR (1) | KR100561178B1 (de) |
AT (1) | ATE331020T1 (de) |
AU (1) | AU4980300A (de) |
DE (1) | DE60028962T2 (de) |
HK (1) | HK1041020B (de) |
TW (1) | TWI237659B (de) |
WO (1) | WO2000066697A1 (de) |
Families Citing this family (60)
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US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
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US6344432B1 (en) * | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
US6451707B2 (en) * | 1999-12-07 | 2002-09-17 | Matsushita Electronics Corporation | Method of removing reaction product due to plasma ashing of a resist pattern |
DE10018338C1 (de) * | 2000-04-13 | 2001-08-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
JP4368498B2 (ja) | 2000-05-16 | 2009-11-18 | Necエレクトロニクス株式会社 | 半導体装置、半導体ウェーハおよびこれらの製造方法 |
US7427529B2 (en) * | 2000-06-06 | 2008-09-23 | Simon Fraser University | Deposition of permanent polymer structures for OLED fabrication |
US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
AU2001278890A1 (en) * | 2000-07-10 | 2002-01-21 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
US6762132B1 (en) | 2000-08-31 | 2004-07-13 | Micron Technology, Inc. | Compositions for dissolution of low-K dielectric films, and methods of use |
US6656894B2 (en) * | 2000-12-07 | 2003-12-02 | Ashland Inc. | Method for cleaning etcher parts |
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MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
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-
1999
- 1999-05-03 US US09/304,450 patent/US6248704B1/en not_active Expired - Lifetime
-
2000
- 2000-05-02 AU AU49803/00A patent/AU4980300A/en not_active Abandoned
- 2000-05-02 DE DE60028962T patent/DE60028962T2/de not_active Expired - Fee Related
- 2000-05-02 KR KR1020017014021A patent/KR100561178B1/ko not_active IP Right Cessation
- 2000-05-02 WO PCT/US2000/011892 patent/WO2000066697A1/en active IP Right Grant
- 2000-05-02 EP EP00932008A patent/EP1177275B1/de not_active Expired - Lifetime
- 2000-05-02 AT AT00932008T patent/ATE331020T1/de not_active IP Right Cessation
- 2000-05-02 JP JP2000615722A patent/JP2002543272A/ja active Pending
- 2000-06-16 TW TW089108389A patent/TWI237659B/zh not_active IP Right Cessation
-
2002
- 2002-04-12 HK HK02102776.4A patent/HK1041020B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1177275A1 (de) | 2002-02-06 |
TWI237659B (en) | 2005-08-11 |
ATE331020T1 (de) | 2006-07-15 |
AU4980300A (en) | 2000-11-17 |
KR20020001863A (ko) | 2002-01-09 |
HK1041020A1 (en) | 2002-06-28 |
WO2000066697A1 (en) | 2000-11-09 |
DE60028962T2 (de) | 2006-12-28 |
HK1041020B (zh) | 2006-09-22 |
EP1177275B1 (de) | 2006-06-21 |
JP2002543272A (ja) | 2002-12-17 |
US6248704B1 (en) | 2001-06-19 |
KR100561178B1 (ko) | 2006-03-15 |
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