ATE405622T1 - Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen - Google Patents

Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen

Info

Publication number
ATE405622T1
ATE405622T1 AT03777786T AT03777786T ATE405622T1 AT E405622 T1 ATE405622 T1 AT E405622T1 AT 03777786 T AT03777786 T AT 03777786T AT 03777786 T AT03777786 T AT 03777786T AT E405622 T1 ATE405622 T1 AT E405622T1
Authority
AT
Austria
Prior art keywords
phosphoric acid
semiconductor devices
acid composition
aqueous phosphoric
cleaning semiconductor
Prior art date
Application number
AT03777786T
Other languages
English (en)
Inventor
Jerome Daviot
Christopher Reid
Douglas Holmes
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Application granted granted Critical
Publication of ATE405622T1 publication Critical patent/ATE405622T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT03777786T 2002-10-22 2003-10-21 Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen ATE405622T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41996802P 2002-10-22 2002-10-22
US43036502P 2002-12-03 2002-12-03

Publications (1)

Publication Number Publication Date
ATE405622T1 true ATE405622T1 (de) 2008-09-15

Family

ID=32179772

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03777786T ATE405622T1 (de) 2002-10-22 2003-10-21 Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen

Country Status (10)

Country Link
US (1) US7235188B2 (de)
EP (1) EP1576072B1 (de)
JP (1) JP2006503972A (de)
KR (1) KR20050084917A (de)
AT (1) ATE405622T1 (de)
AU (1) AU2003286584A1 (de)
DE (1) DE60323148D1 (de)
ES (1) ES2310677T3 (de)
TW (1) TWI309675B (de)
WO (1) WO2004037962A2 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
CN1918698B (zh) 2004-02-09 2010-04-07 三菱化学株式会社 半导体装置用基板的洗涤液及洗涤方法
EP1628336B1 (de) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Reinigungsmittel und Methode zur Reinigung
WO2006081406A1 (en) * 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US7682458B2 (en) 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
JP2008541426A (ja) * 2005-05-06 2008-11-20 マリンクロッド・ベイカー・インコーポレイテッド エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物
US20080287332A1 (en) * 2005-10-21 2008-11-20 Freescale Semiconductor, Inc. Method for Removing Etch Residue and Chemistry Therefor
JP4693642B2 (ja) * 2006-01-30 2011-06-01 株式会社東芝 半導体装置の製造方法および洗浄装置
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20080039356A1 (en) * 2006-07-27 2008-02-14 Honeywell International Inc. Selective removal chemistries for semiconductor applications, methods of production and uses thereof
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
KR100916353B1 (ko) * 2007-07-13 2009-09-11 제일모직주식회사 반도체 소자용 세정액 조성물 및 이를 이용한 반도체소자의 세정 방법
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
TWI460557B (zh) * 2008-03-07 2014-11-11 和光純藥工業股份有限公司 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
US20090270299A1 (en) * 2008-04-23 2009-10-29 Nissan Chemical Industries, Ltd. Composition for removing protective layer in fabrication of MEMS and method for removing same
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8324114B2 (en) 2010-05-26 2012-12-04 Lam Research Corporation Method and apparatus for silicon oxide residue removal
US20120276714A1 (en) * 2011-04-28 2012-11-01 Nanya Technology Corporation Method of oxidizing polysilazane
US20120288335A1 (en) * 2011-05-11 2012-11-15 Rodney Green Soil Stabilization Composition and Methods for Use
TWI577834B (zh) * 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
US20140329184A1 (en) * 2011-11-22 2014-11-06 Taminco Stabilized choline solutions and methods for preparing the same
KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법
US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US8647445B1 (en) 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof
KR102227978B1 (ko) * 2014-05-22 2021-03-15 삼성전자주식회사 전기습윤 소자용 유체 및 이를 이용한 전기습윤 소자
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
CN108573856B (zh) * 2018-04-13 2020-09-04 深圳市华星光电技术有限公司 一种阵列基板的制备方法及清洗液
KR20210127183A (ko) * 2019-02-15 2021-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN115427547A (zh) * 2020-04-09 2022-12-02 昭和电工株式会社 组合物、及粘接性聚合物的洗涤方法
KR102503999B1 (ko) * 2022-11-14 2023-02-27 강연중 질산과 약산을 일정 비율로 포함하여 반도체 설비 챔버하우징의 세정 시 발생하는 질소산화물 가스 발생을 줄이고 오염막을 효과적으로 제거하는 세정제 조성물
CN117327542A (zh) * 2023-09-27 2024-01-02 湖北宇浩高科新材料有限公司 一种清洗剂、无水磷酸铁生产装置的除垢方法及应用
US20250235900A1 (en) * 2024-01-23 2025-07-24 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal
CN119410418A (zh) * 2024-09-30 2025-02-11 湖北兴福电子材料股份有限公司 一种去除聚酰亚胺蚀刻后残留物的清洗液

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826399B2 (ja) * 1978-06-05 1983-06-02 花王株式会社 液体洗浄剤組成物
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5262285A (en) * 1992-05-04 1993-11-16 Eastman Kodak Company Methods and compositions for retouching film images
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JPH06212193A (ja) * 1992-12-21 1994-08-02 Nitto Chem Ind Co Ltd レジスト剥離剤除去用洗浄剤
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JPH1116882A (ja) * 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JP3160238B2 (ja) * 1997-08-04 2001-04-25 岸本産業株式会社 半導体デバイス製造プロセス用および液晶デバイス製造プロセス用洗浄剤
US6045817A (en) * 1997-09-26 2000-04-04 Diversey Lever, Inc. Ultramild antibacterial cleaning composition for frequent use
JP3693143B2 (ja) * 1997-12-26 2005-09-07 株式会社ジャパンエナジー ウエハ洗浄用組成物及びそれを用いた洗浄方法
AU4189599A (en) * 1998-05-18 1999-12-06 Mallinckrodt, Inc. Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6162738A (en) * 1998-09-01 2000-12-19 Micron Technology, Inc. Cleaning compositions for high dielectric structures and methods of using same
US5998358A (en) * 1999-03-23 1999-12-07 Ecolab Inc. Antimicrobial acid cleaner for use on organic or food soil
US6346217B1 (en) * 1999-06-02 2002-02-12 Water Whole International, Inc. Composition and method for cleaning drink water tanks
JP3365980B2 (ja) * 1999-08-03 2003-01-14 花王株式会社 洗浄剤組成物
US6686297B1 (en) * 2000-08-17 2004-02-03 Georg Gogg Method of manufacturing a semiconductor device and apparatus to be used therefore
JP4614415B2 (ja) * 2000-08-30 2011-01-19 フアインポリマーズ株式会社 レジスト残渣除去剤
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP4689855B2 (ja) * 2001-03-23 2011-05-25 イーケーシー テクノロジー，インコーポレイティド 残渣剥離剤組成物およびその使用方法
US6475967B1 (en) * 2002-03-05 2002-11-05 Colgate-Palmolive Company Liquid dish cleaning compositions containing a peroxide source

Also Published As

Publication number Publication date
TW200420724A (en) 2004-10-16
JP2006503972A (ja) 2006-02-02
EP1576072B1 (de) 2008-08-20
TWI309675B (en) 2009-05-11
DE60323148D1 (de) 2008-10-02
EP1576072A2 (de) 2005-09-21
AU2003286584A1 (en) 2004-05-13
EP1576072A4 (de) 2006-05-17
ES2310677T3 (es) 2009-01-16
US20040137736A1 (en) 2004-07-15
WO2004037962A3 (en) 2004-09-23
AU2003286584A8 (en) 2004-05-13
KR20050084917A (ko) 2005-08-29
US7235188B2 (en) 2007-06-26
WO2004037962A2 (en) 2004-05-06

Similar Documents

Publication Publication Date Title
ATE405622T1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
TW200505975A (en) Aqueous fluoride compositions for cleaning semiconductor devices
DK1105778T3 (da) Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater
NO20061247L (no) Avstryknings- og rengjoringsblandinger for mikroelektronikk
AU2001296947A1 (en) Stabilized alkaline compositions for cleaning microelectronic substrates
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
AU6348600A (en) Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
ATE340244T1 (de) Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen
ATE331020T1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
MY146827A (en) Aqueous cleaning composition for removing residues and method using same
EP1451642A4 (de) Chemische spülzusammensetzung
WO2004059383A3 (en) Fluoride in supercritical fluid for photoresist and residue removal
MY130394A (en) Aqueous stripping and cleaning composition
SG136966A1 (en) Composition for stripping and cleaning and use thereof
DE60323143D1 (de) Aufüberkritischem kohlenstoffdioxid beruhende formulierung für die entfernung von gegebenenfalls veraschten aluminiumresten nach dem ätzen
TW200630482A (en) Aqueous based residue removers comprising fluoride
SG152961A1 (en) Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
DE60238244D1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
TW200702435A (en) Phosphonic acid-containing formulation for cleaning semiconductor wafer and cleaning method
DE602004008863D1 (de) Zusammensetzung und Verfahren zur Behandlung von Halbleitersubstraten
TW200717633A (en) Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method
TW200702942A (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
MY139624A (en) Stripping and cleaning compositions for microelectronics
TW200703426A (en) Etchant and etching method of metal oxide

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties