CN115427547A - 组合物、及粘接性聚合物的洗涤方法 - Google Patents
组合物、及粘接性聚合物的洗涤方法 Download PDFInfo
- Publication number
- CN115427547A CN115427547A CN202180027510.6A CN202180027510A CN115427547A CN 115427547 A CN115427547 A CN 115427547A CN 202180027510 A CN202180027510 A CN 202180027510A CN 115427547 A CN115427547 A CN 115427547A
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- China
- Prior art keywords
- composition
- mass
- adhesive polymer
- substituted amide
- composition according
- Prior art date
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- Pending
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- 239000000203 mixture Substances 0.000 title claims abstract description 85
- 239000002998 adhesive polymer Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 20
- 238000004140 cleaning Methods 0.000 title description 8
- -1 N-substituted amide compound Chemical class 0.000 claims abstract description 63
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000010 aprotic solvent Substances 0.000 claims abstract description 28
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 25
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 235000006708 antioxidants Nutrition 0.000 claims description 24
- 235000010354 butylated hydroxytoluene Nutrition 0.000 claims description 17
- 238000005406 washing Methods 0.000 claims description 15
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- CZBZUDVBLSSABA-UHFFFAOYSA-N butylated hydroxyanisole Chemical compound COC1=CC=C(O)C(C(C)(C)C)=C1.COC1=CC=C(O)C=C1C(C)(C)C CZBZUDVBLSSABA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000354 decomposition reaction Methods 0.000 claims description 11
- 239000003599 detergent Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- SPSPIUSUWPLVKD-UHFFFAOYSA-N 2,3-dibutyl-6-methylphenol Chemical compound CCCCC1=CC=C(C)C(O)=C1CCCC SPSPIUSUWPLVKD-UHFFFAOYSA-N 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 235000010323 ascorbic acid Nutrition 0.000 claims description 5
- 239000011668 ascorbic acid Substances 0.000 claims description 5
- 229960005070 ascorbic acid Drugs 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 3
- QFMDFTQOJHFVNR-UHFFFAOYSA-N 1-[2,2-dichloro-1-(4-ethylphenyl)ethyl]-4-ethylbenzene Chemical compound C1=CC(CC)=CC=C1C(C(Cl)Cl)C1=CC=C(CC)C=C1 QFMDFTQOJHFVNR-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 17
- 235000012431 wafers Nutrition 0.000 description 58
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 42
- 239000000853 adhesive Substances 0.000 description 19
- 230000001070 adhesive effect Effects 0.000 description 18
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 125000005210 alkyl ammonium group Chemical group 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- 239000012046 mixed solvent Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002222 fluorine compounds Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CIWBSHSKHKDKBQ-SZSCBOSDSA-N 2-[(1s)-1,2-dihydroxyethyl]-3,4-dihydroxy-2h-furan-5-one Chemical compound OC[C@H](O)C1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-SZSCBOSDSA-N 0.000 description 4
- 239000002211 L-ascorbic acid Substances 0.000 description 4
- 235000000069 L-ascorbic acid Nutrition 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 239000003880 polar aprotic solvent Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- VEPTXBCIDSFGBF-UHFFFAOYSA-M tetrabutylazanium;fluoride;trihydrate Chemical compound O.O.O.[F-].CCCC[N+](CCCC)(CCCC)CCCC VEPTXBCIDSFGBF-UHFFFAOYSA-M 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 150000004677 hydrates Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000003586 protic polar solvent Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- HSJKGGMUJITCBW-UHFFFAOYSA-N 3-hydroxybutanal Chemical compound CC(O)CC=O HSJKGGMUJITCBW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 150000001983 dialkylethers Chemical class 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- GUVUOGQBMYCBQP-UHFFFAOYSA-N dmpu Chemical compound CN1CCCN(C)C1=O GUVUOGQBMYCBQP-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- NKJOXAZJBOMXID-UHFFFAOYSA-N 1,1'-Oxybisoctane Chemical compound CCCCCCCCOCCCCCCCC NKJOXAZJBOMXID-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 1
- OHRSSDYDJRJIMN-UHFFFAOYSA-N 1-[2-[2-(2-butoxypropoxy)propoxy]propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCC(C)OCCCC OHRSSDYDJRJIMN-UHFFFAOYSA-N 0.000 description 1
- QCYFOZWGXKXDJA-UHFFFAOYSA-N 1-butoxyhexane Chemical compound CCCCCCOCCCC QCYFOZWGXKXDJA-UHFFFAOYSA-N 0.000 description 1
- HLKBESQBAMRXPZ-UHFFFAOYSA-N 1-butoxyoctane Chemical compound CCCCCCCCOCCCC HLKBESQBAMRXPZ-UHFFFAOYSA-N 0.000 description 1
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 description 1
- ORRRIJVZQZKAKQ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxypropoxy)propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OCC ORRRIJVZQZKAKQ-UHFFFAOYSA-N 0.000 description 1
- UZXXRFKXXJEKJA-UHFFFAOYSA-N 1-ethyl-3-methylimidazolidin-2-one Chemical compound CCN1CCN(C)C1=O UZXXRFKXXJEKJA-UHFFFAOYSA-N 0.000 description 1
- UJEGHEMJVNQWOJ-UHFFFAOYSA-N 1-heptoxyheptane Chemical compound CCCCCCCOCCCCCCC UJEGHEMJVNQWOJ-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- ROSYHLFNMZTEKZ-UHFFFAOYSA-N 1-methoxy-2-[2-[2-(2-methoxypropoxy)propoxy]propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OCC(C)OC ROSYHLFNMZTEKZ-UHFFFAOYSA-N 0.000 description 1
- KYEACNNYFNZCST-UHFFFAOYSA-N 1-methylpyrrolidine-2,5-dione Chemical compound CN1C(=O)CCC1=O KYEACNNYFNZCST-UHFFFAOYSA-N 0.000 description 1
- AOPDRZXCEAKHHW-UHFFFAOYSA-N 1-pentoxypentane Chemical compound CCCCCOCCCCC AOPDRZXCEAKHHW-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000013006 addition curing Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000019282 butylated hydroxyanisole Nutrition 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010227 cup method (microbiological evaluation) Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- GVJHHUAWPYXKBD-UHFFFAOYSA-N d-alpha-tocopherol Natural products OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical class O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000004686 pentahydrates Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical class O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000010352 sodium erythorbate Nutrition 0.000 description 1
- 239000004320 sodium erythorbate Substances 0.000 description 1
- RBWSWDPRDBEWCR-RKJRWTFHSA-N sodium;(2r)-2-[(2r)-3,4-dihydroxy-5-oxo-2h-furan-2-yl]-2-hydroxyethanolate Chemical compound [Na+].[O-]C[C@@H](O)[C@H]1OC(=O)C(O)=C1O RBWSWDPRDBEWCR-RKJRWTFHSA-N 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 238000007614 solvation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 description 1
- 235000010384 tocopherol Nutrition 0.000 description 1
- 229960001295 tocopherol Drugs 0.000 description 1
- 229930003799 tocopherol Natural products 0.000 description 1
- 239000011732 tocopherol Substances 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- GVJHHUAWPYXKBD-IEOSBIPESA-N α-tocopherol Chemical compound OC1=C(C)C(C)=C2O[C@@](CCC[C@H](C)CCC[C@H](C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-IEOSBIPESA-N 0.000 description 1
- 150000003953 γ-lactams Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
- C11D7/30—Halogenated hydrocarbons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5018—Halogenated solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
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Abstract
提供抑制了经时的蚀刻速度的降低的组合物。一种组合物,其包含:氟化烷基季铵和氟化烷基季铵的水合物中的至少1种;作为非质子性溶剂的(A)在氮原子上不具有活性氢的N‑取代酰胺化合物、和(B)双丙甘醇二甲基醚;以及抗氧化剂。
Description
技术领域
本发明涉及组合物、以及粘接性聚合物的洗涤方法。本发明的一实施方案涉及在半导体晶片的薄型化工艺中,可以用于将残留在器件晶片上的、器件晶片与支持晶片(载体晶片)的临时粘接所使用的包含粘接性聚合物的粘接剂分解洗涤的组合物、以及使用了该组合物的粘接性聚合物的洗涤方法。
背景技术
在用于半导体的高密度化的三维安装技术中,半导体晶片的每1片的厚度被减薄,叠层有通过硅贯通电极(TSV)而被接线了的多个半导体晶片。具体而言,将形成了半导体器件的器件晶片的未形成器件的面(背面)通过研磨而进行了薄型化后,在该背面进行包含TSV的电极形成。
在器件晶片的背面的研磨工序中,为了向器件晶片赋予机械强度,也被称为载体晶片的支持晶片使用粘接剂而被临时粘接于器件晶片的半导体器件形成面。作为支持晶片,使用例如玻璃晶片或硅晶片。在研磨工序后,根据需要在器件晶片的研磨面(背面)形成包含Al、Cu、Ni、Au等的金属配线或电极焊盘、氧化膜、氮化膜等无机膜、或包含聚酰亚胺等的树脂层。然后,通过将器件晶片的背面贴合于通过环形框架而被固定了的、具有丙烯酸系粘着层的带,从而器件晶片被固定于带。然后,器件晶片从支持晶片被分离(脱粘),器件晶片上的粘接剂被剥离,器件晶片上的粘接剂的残留物使用洗涤剂而被洗涤除去。
在器件晶片的临时粘接用途中,使用包含耐热性良好的聚有机硅氧烷化合物作为粘接性聚合物的粘接剂。特别是,在粘接剂为进行了交联的聚有机硅氧烷化合物的情况下,洗涤剂要求Si-O键的切断和采用溶剂的分解生成物的溶解这2个作用。作为那样的洗涤剂,可举出例如使四丁基氟化铵(TBAF)等氟系化合物溶解于极性的非质子性溶剂而得的物质。TBAF的氟离子由于经由Si-F键生成而参与Si-O键的切断,因此可以向洗涤剂赋予蚀刻性能。极性非质子性溶剂由于能够溶解TBAF,并且不通过与氟离子的氢键而溶剂化,因此可以提高氟离子的反应性。
在专利文献1(日本特开2014-133855号公报)中记载了使四烷基氢氧化铵溶解于极性非质子性溶剂而成的硅氧烷树脂的洗涤液。
在专利文献2(日本特表2015-505886号公报)中记载了使TBAF溶解于酯或酮而成的聚硅氧烷的洗涤液。
在专利文献3(日本特开2004-000969号公报)中记载了使TBAF溶解于丙二醇烷基醚醇(propylene glycol alkyl ether alkoate)而成的洗涤液。
现有技术文献
专利文献
专利文献1:日本特开2014-133855号公报
专利文献2:日本特表2015-505886号公报
专利文献3:日本特开2004-000969号公报
发明内容
发明所要解决的课题
可以认为包含TBAF等氟化合物和溶剂的洗涤剂中的溶剂的作用在于,使作为反应性物质的极性高的氟化合物充分溶解,使与极性低的粘接剂的表面的亲和性充分,确保氟化合物所包含的氟离子的反应性,同时溶解粘接剂的分解生成物。
对于粘接剂所包含的粘接性聚合物,有时在改善耐热性、剥离性等的目的下导入取代基,由此粘接剂的表面有时显示各种极性。期望洗涤剂对那样的显示各种极性的粘接剂的表面显示优异的亲和性,由此实现高的蚀刻速度。
本发明人等发现即使在为了在确保氟化合物所包含的氟离子的反应性的同时,溶解粘接剂的分解生成物,而使用了非质子性的N-取代酰胺化合物和双丙甘醇二甲基醚作为溶剂的情况下,也发生在组合物的调制后,随着保存期间的经过而组合物的蚀刻速度降低的情况。
本发明提供抑制了经时的蚀刻速度的降低的组合物。
用于解决课题的手段
本发明人等发现通过使用包含氟化烷基季铵或其水合物、在氮原子上不具有活性氢的N-取代酰胺化合物、双丙甘醇二甲基醚、和抗氧化剂的组合物,可以抑制经时的蚀刻速度的降低。
即本发明包含以下[1]~[11]。
[1]
一种组合物,其包含:氟化烷基季铵和氟化烷基季铵的水合物中的至少1种;作为非质子性溶剂的(A)在氮原子上不具有活性氢的N-取代酰胺化合物、和(B)双丙甘醇二甲基醚;以及抗氧化剂。
[2]
根据[1]所述的组合物,上述抗氧化剂包含选自二丁基羟基甲苯(BHT)、丁基羟基茴香醚(BHA)、和抗坏血酸中的至少1种。
[3]
根据[1]或[2]所述的组合物,上述抗氧化剂的含量为10质量ppm~1000质量ppm。
[4]
根据[1]~[3]中任一项所述的组合物,上述(A)N-取代酰胺化合物为式(1)所示的2-吡咯烷酮衍生物化合物。
(在式(1)中,R1表示碳原子数1~4的烷基。)
[5]
根据[4]所述的组合物,上述(A)N-取代酰胺化合物为在式(1)中R1为甲基或乙基的2-吡咯烷酮衍生物化合物。
[6]
根据[1]~[5]中任一项所述的组合物,上述氟化烷基季铵的含量为0.01~10质量%。
[7]
根据[1]~[6]中任一项所述的组合物,上述氟化烷基季铵为式(2)所示的氟化四烷基铵。
R2R3R4R5N+F- (2)
(在式(2)中,R2~R5各自独立地表示选自甲基、乙基、正丙基、异丙基、和正丁基中的烷基。)
[8]
根据[1]~[7]中任一项所述的组合物,相对于上述非质子性溶剂100质量%,上述(A)N-取代酰胺化合物的含量为50~95质量%,上述(B)双丙甘醇二甲基醚的含量为5~50质量%。
[9]
根据[1]~[8]中任一项所述的组合物,其为粘接性聚合物的分解洗涤组合物。
[10]
根据[9]所述的组合物,上述粘接性聚合物为聚有机硅氧烷化合物。
[11]
一种使用[1]~[10]中任一项所述的组合物将基材上的粘接性聚合物进行洗涤的方法。
发明的效果
本发明的组合物可以抑制经时的蚀刻速度的降低。这对于组合物的长期的保存是有利的。
上述记载不视为公开了本发明的全部实施方案和与本发明有关的全部优点。
具体实施方式
以下,显示例示的实施方案而进一步详细地说明本发明。
[组合物]
一实施方案的组合物包含:氟化烷基季铵和氟化烷基季铵的水合物中的至少1种;作为非质子性溶剂的、(A)在氮原子上不具有活性氢的N-取代酰胺化合物、和(B)双丙甘醇二甲基醚(DPGDME);以及抗氧化剂。
一实施方案的组合物含有在氮原子上不具有活性氢(氢原子不与氮原子直接结合)的N-取代酰胺化合物(也简称为“N-取代酰胺化合物”。)作为溶剂。已知N-取代酰胺化合物通过与氧接触从而缓慢被氧化而生成氧化物。例如,在N-甲基吡咯烷酮(NMP)被氧化了的情况下生成以N-甲基琥珀酰亚胺为代表的NMP衍生物。由于该N-取代酰胺化合物的氧化生成物在组合物中使具有对氟离子具有活性的氢原子的生成物产生,因此可以认为使氟离子的活性降低,其结果蚀刻速度经时降低。因此,可以认为为了维持蚀刻速度,期望抑制N-取代酰胺化合物的氧化。
<氟化烷基季铵及其水合物>
氟化烷基季铵及其水合物释放参与Si-O键的切断的氟离子。烷基季铵部分可以使作为盐的氟化烷基季铵溶解于非质子性溶剂。作为氟化烷基季铵,可以没有特别限制地使用各种化合物。作为氟化烷基季铵的水合物,可举出例如三水合物、四水合物和五水合物。氟化烷基季铵可以为1种或2种以上的组合。氟化烷基季铵的非水合物与水合物可以以任意的比率使用。
在一实施方案中,氟化烷基季铵为式(2)所示的氟化四烷基铵。
R2R3R4R5N+F-(2)
(在式(2)中,R2~R5各自独立地表示选自甲基、乙基、正丙基、异丙基、和正丁基中的烷基。)
从获得容易性的观点考虑,R2~R5优选为全部相同的烷基。作为那样的氟化烷基季铵,可举出四甲基氟化铵、四乙基氟化铵、四丙基氟化铵、四丁基氟化铵等。从分解洗涤性能、获得容易性、价格等观点考虑,氟化烷基季铵优选为四丁基氟化铵(TBAF)。
组合物中的氟化烷基季铵的含量优选为0.01~10质量%。这里“氟化烷基季铵的含量”,在组合物中包含氟化烷基季铵的水合物的情况下,是换算为除水合水的质量以外的、仅氟化烷基季铵的质量的值。组合物中的氟化烷基季铵的含量更优选为1~10质量%,进一步优选为3~7质量%,特别优选为4~6质量%。通过使氟化烷基季铵的含量为0.01质量%以上,从而可以有效地分解和洗涤粘接性聚合物,通过为10质量%以下,从而可以防止或抑制器件晶片的器件形成面所包含的金属部分的腐蚀。
<非质子性溶剂>
组合物包含(A)在氮原子上不具有活性氢的N-取代酰胺化合物、和(B)双丙甘醇二甲基醚作为非质子性溶剂。
组合物中的非质子性溶剂的含量优选为80~99.98质量%,更优选为85~99.95质量%,进一步优选为90~99.9质量%。
〔(A)在氮原子上不具有活性氢的N-取代酰胺化合物〕
(A)在氮原子上不具有活性氢的N-取代酰胺化合物(也简称为“(A)N-取代酰胺化合物”。)为较高极性的非质子性溶剂,可以在组合物中使氟化烷基季铵及其水合物均匀地溶解或分散。在一实施方案中“(A)N-取代酰胺化合物”也包含在氮原子上不具有活性氢的脲化合物(尿素化合物)。作为(A)N-取代酰胺化合物,可以没有特别限制地使用各种化合物,可举出例如,N,N-二甲基甲酰胺(DMF)、N,N-二乙基甲酰胺、N,N-二甲基乙酰胺、N,N-二乙基乙酰胺、N,N-二甲基丙酰胺、N,N-二乙基丙酰胺、四甲基脲等非环式N-取代酰胺;2-吡咯烷酮衍生物、2-哌啶酮衍生物、ε-己内酰胺衍生物、1,3-二甲基-2-咪唑烷酮(DMI)、1-甲基-3-乙基-2-咪唑烷酮、1,3-二乙基-2-咪唑烷酮、1,3-二甲基-3,4,5,6-四氢-2(1H)-嘧啶酮(N,N’-二甲基亚丙基脲)等环式N-取代酰胺。它们之中,(A)N-取代酰胺化合物优选为环式N-取代酰胺。(A)N-取代酰胺化合物可以为1种或2种以上的组合。
在一实施方案中,(A)N-取代酰胺化合物为式(1)所示的2-吡咯烷酮衍生物化合物。
(在式(1)中,R1表示碳原子数1~4的烷基。)
作为碳原子数1~4的烷基,可举出甲基、乙基、正丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基等。作为式(1)所示的2-吡咯烷酮衍生物化合物,可举出例如,N-甲基吡咯烷酮(NMP)、N-乙基吡咯烷酮(NEP)、N-丙基吡咯烷酮、N-丁基吡咯烷酮等。
从极性比较高,氟化烷基季铵的溶解能力优异,获得容易考虑,(A)N-取代酰胺化合物优选为在式(1)中R1为甲基或乙基的2-吡咯烷酮衍生物化合物,更优选为在式(1)中R1为甲基的2-吡咯烷酮衍生物化合物,即N-甲基吡咯烷酮。
非质子性溶剂中的N-取代酰胺化合物的含量在将非质子性溶剂设为100质量%时,优选为50~95质量%,更优选为60~95质量%,进一步优选为70~90质量%。
〔(B)双丙甘醇二甲基醚〕
通过将(B)双丙甘醇二甲基醚(DPGDME)与(A)N-取代酰胺化合物组合,从而可以形成对粘接剂表面显示高的亲和性的混合溶剂系。使用了那样的混合溶剂系的组合物可以实现有效利用了氟化烷基季铵的反应活性的高的蚀刻速度。
非质子性溶剂中的双丙甘醇二甲基醚的含量在将非质子性溶剂设为100质量%时,优选为5~50质量%,更优选为5~40质量%,进一步优选为10~30质量%。
〔追加的非质子性溶剂〕
组合物也可以包含除(A)N-取代酰胺化合物和(B)双丙甘醇二甲基醚以外的追加的非质子性溶剂。作为那样的追加的非质子性溶剂,可举出例如,乙二醇二甲基醚、丙二醇二甲基醚、二甘醇二甲基醚、三丙二醇二甲基醚、三丙二醇二乙基醚、三丙二醇二正丁基醚、四甘醇二甲基醚、四丙二醇二甲基醚等二醇的二烷基醚;二丁基醚、二戊基醚、二己基醚、二庚基醚、二辛基醚、丁基己基醚、丁基辛基醚等二烷基醚等。
追加的非质子性溶剂的闪点优选为21℃以上。通过使用闪点为21℃以上,即不相当于危险物第4类第1石油类的追加的非质子性溶剂,从而可以减少组合物的制造和使用中的设备、作业环境等要件。例如,二甘醇二甲基醚和二丁基醚的闪点分别为51℃和25℃。需要说明的是,双丙甘醇二甲基醚的闪点为60℃。闪点通过泰格闭口杯法(JIS K 2265-1:2007)测定。
非质子性溶剂中的追加的非质子性溶剂的含量在将非质子性溶剂设为100质量%时,优选为10质量%以下,更优选为5质量%以下,进一步优选为1质量%以下。在一实施方案中,非质子性溶剂不包含追加的非质子性溶剂,即,由(A)N-取代酰胺化合物和(B)双丙甘醇二甲基醚构成。
<抗氧化剂>
抗氧化剂防止溶剂中的N-取代酰胺化合物被空气氧化而生成氧化物。抗氧化剂的种类没有特别限定,可举出例如二丁基羟基甲苯(BHT)、丁基羟基茴香醚(BHA)、抗坏血酸及其衍生物、生育酚及其衍生物、异抗坏血酸钠等。这些抗氧化剂在非质子性溶剂中的溶解性优异,也可以作为(B)双丙甘醇二甲基醚和其它醚的抗氧化剂起作用。抗氧化剂可以仅使用1种,也可以组合使用2种以上。从获得容易性、价格等观点考虑,抗氧化剂优选为选自二丁基羟基甲苯(BHT)、丁基羟基茴香醚(BHA)、和抗坏血酸中的至少1种,更优选为二丁基羟基甲苯(BHT)。
组合物中的抗氧化剂的含量优选为10质量ppm~1000质量ppm。组合物中的抗氧化剂的含量更优选为10质量ppm~500质量ppm,进一步优选为20质量ppm~200质量ppm,特别优选为30质量ppm~100质量ppm。通过使抗氧化剂的含量为上述范围,从而可以更有效地抑制经时的蚀刻速度的降低。此外,通过使抗氧化剂的含量为1000质量ppm以下,从而可以保持与不使用抗氧化剂的情况下同等的初始蚀刻速度,并且抑制起因于抗氧化剂或其反应生成物的组合物的着色。
<添加剂和其它成分>
组合物在不显著损害本发明的效果的范围,也可以包含表面活性剂、防腐剂、发泡防止剂等添加剂作为可选成分。
在一实施方案中,组合物实质上不包含或不包含质子性溶剂。例如,可以使组合物中的质子性溶剂的含量为5质量%以下、3质量%以下、或1质量%以下。组合物能够包含的质子性溶剂也可以为来源于氟化烷基季铵的水合物的水。
在一实施方案中,组合物实质上不包含或不包含选自酮和酯中的非质子性溶剂。例如,可以使组合物中的选自酮和酯中的非质子性溶剂的含量为1质量%以下、0.5质量%以下、或0.1质量%以下。在该实施方案中,可以抑制在氟化合物的存在下,由酮或酯生成的反应生成物(羟醛自缩合物)或分解生成物(醇和羧酸)与氟离子溶剂化所引起的氟离子的失活,抑制蚀刻速度的经时的降低。
一实施方案的组合物可以作为各种粘接剂所包含的粘接性聚合物的分解洗涤组合物而使用。粘接性聚合物只要可以使用一实施方案的组合物进行洗涤,就没有特别限制。粘接剂除了粘接性聚合物以外,还可以包含固化剂、固化促进剂、交联剂、表面活性剂、流平剂、填充材等作为可选成分。
<粘接性聚合物>
在一实施方案中,粘接性聚合物包含Si-O键。粘接性聚合物通过由氟化烷基季铵的氟离子引起的Si-O键的切断而低分子化或失去交联结构,能够溶解于非质子性溶剂,其结果,能够从器件晶片等的表面除去粘接性聚合物。
包含Si-O键的粘接性聚合物优选为聚有机硅氧烷化合物。聚有机硅氧烷化合物由于包含多个硅氧烷键(Si-O-Si),因此可以使用组合物而有效地分解和洗涤。作为聚有机硅氧烷化合物,可举出例如有机硅弹性体、有机硅凝胶、和MQ树脂等有机硅树脂、以及它们的环氧改性体、丙烯酸系改性体、甲基丙烯酸系改性体、氨基改性体、巯基改性体等改性体。聚有机硅氧烷化合物也可以为有机硅改性聚氨酯、有机硅改性丙烯酸系树脂等有机硅改性聚合物。
在一实施方案中,粘接性聚合物为加成固化型的有机硅弹性体、有机硅凝胶、或有机硅树脂。这些加成固化型有机硅包含含有烯属不饱和基的聚有机硅氧烷例如乙烯基末端聚二甲基硅氧烷或乙烯基末端MQ树脂、和作为交联剂的聚有机氢硅氧烷例如聚甲基氢硅氧烷,使用铂催化剂等氢化硅烷化催化剂而被固化。
在其它实施方案中,粘接性聚合物包含含有芳烷基、环氧基、或苯基的聚二有机硅氧烷、特别是含有芳烷基、环氧基、或苯基的聚二甲基硅氧烷。可以将包含这样的粘接性聚合物的粘接剂与包含上述加成固化型有机硅的粘接剂组合而使用于临时粘接。
[粘接性聚合物的洗涤方法]
位于硅晶片等基材上的粘接性聚合物的洗涤可以使用组合物通过以往已知的各种方法进行。作为粘接性聚合物的洗涤方法,可举出例如,一边使用旋转涂布机等以规定的速度使基材旋转一边以与粘接性聚合物接触的方式将组合物排出到基材上(旋转蚀刻)、对基材上的粘接性聚合物喷雾组合物(喷射)、在加入了组合物的槽中浸渍具有粘接性聚合物的基材(浸渍)等。分解洗涤的温度可以根据基材上的粘接性聚合物的种类和附着量而各式各样,一般为20℃~90℃,优选为40℃~60℃。分解洗涤的时间可以根据基材上的粘接性聚合物的种类和附着量而各式各样,一般为5秒~10小时,优选为10秒~2小时。在分解洗涤时,也可以对组合物的浴或基材应用超声波。
也可以在分解洗涤后,将基材使用异丙醇(IPA)等醇、离子交换水(DIW)等进行冲洗,也可以将基材通过氮气、空气等的喷射、常压下或减压下的加热等进行干燥。
[器件晶片的制造方法]
在一实施方案中,器件晶片的制造方法包含使用组合物将器件晶片上的粘接性聚合物进行洗涤。在洗涤后,可以根据需要将器件晶片冲洗或干燥。
器件晶片的制造方法可以进一步包含以下工序:在硅晶片等基材上形成半导体器件而获得器件晶片;使器件晶片的半导体器件形成面与支持晶片对置而将器件晶片与支持晶片经由包含粘接性聚合物的粘接剂进行临时粘接;通过对器件晶片的器件形成面的相反面(背面)进行研磨从而将器件晶片薄型化;从器件晶片分离支持晶片。半导体器件的形成、器件晶片与支持晶片的临时粘接、器件晶片的背面的研磨、和器件晶片从支持晶片的分离可以通过以往已知的方法进行,没有特别限制。
[支持晶片的再生方法]
组合物可以使用于器件晶片的制造所使用的支持晶片的再生。在一实施方案中,支持晶片的再生方法包含使用组合物将支持晶片上的粘接性聚合物进行洗涤。在洗涤后,可以根据需要将支持晶片冲洗或干燥。
实施例
以下,基于实施例更详细地说明本发明,但本发明不受实施例限制。
[实施例1]
包含抗氧化剂(BHT)的组合物的调制
在125mL的聚乙烯容器中投入3.332g的四丁基氟化铵·三水合物(TBAF·3H2O)和0.0030g的二丁基羟基甲苯(BHT)(东京化成工业株式会社),按照38.934g的N-甲基吡咯烷酮(NMP)、12.017g的双丙甘醇二甲基醚(DPGDME)(日本乳化剂株式会社)的顺序投入,进行混合从而使TBAF·3H2O溶解。这样操作而调制出包含BHT 55质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。此外,以同样的步骤投入0.0059g或0.0291g的BHT,调制出包含BHT 109质量ppm或536质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。
[比较例1]
在实施例1中不使用BHT,除此以外,以同样的步骤调制出NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。
洗涤试验
将12英寸(300mm)硅晶片(厚度770μm)分割为1.5cm×1.5cm的尺寸。将由SYLGARD(注册商标)184(デュポン·東レ·スペシャルティ·マテリアル株式会社制)的主剂2.1484g与固化剂0.2137g混合成的粘接剂用巴斯德吸管吸出,在分割了的硅晶片上滴加1滴。然后,用干燥机(125℃)加热20分钟,在硅晶片上形成了粘接剂层。将其设为试验片,使用测微计测定了试验片的中心部的厚度。
在电磁搅拌器上放置容积50cc的螺口管瓶。在螺口管瓶中投入了15.0mL的刚调制后(调制后30分钟以内)的组合物和搅拌子。在组合物中浸渍试验片1片,在室温(25℃)下,以900rpm的转速使搅拌子旋转5分钟。在浸渍后,将试验片用镊子取出,使用异丙醇(IPA)的洗瓶充分地冲洗。然后,同样地操作而使用离子交换水(DIW)的洗瓶充分地冲洗试验片。对试验片喷射氮气而使附着了的水干燥后,使用测微计测定了试验片的中心部的厚度。将浸渍前后的试验片的厚度之差除以5(分钟)而得的值设为蚀刻速度(ER)。将同样的试验在调制组合物后第7天、第14天、第25天也进行。
将测定了实施例1和比较例1的蚀刻速度的结果示于表1中。
[表1]
表1
[实施例2]
包含抗氧化剂(BHA)的组合物的调制
在125mL的聚乙烯容器中投入3.332g的四丁基氟化铵·三水合物(TBAF·3H2O)和0.03054g的丁基羟基茴香醚(BHA)(关东化学株式会社),按照38.957g的N-甲基吡咯烷酮(NMP)、12.156g的DPGDME(日本乳化剂株式会社)的顺序投入,进行混合从而使TBAF·3H2O溶解。这样操作而调制出包含BHA 560质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。此外,以同样的步骤投入0.00335g或0.00654g的BHA,调制出包含BHA 55质量ppm或108质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。
[实施例3]
包含抗氧化剂(抗坏血酸)的组合物的调制
以与实施例2同样的步骤投入L-(+)-抗坏血酸(关东化学株式会社)0.02998g而调制出包含L-(+)-抗坏血酸500质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。此外,以同样的步骤投入0.00360g或0.00597g的L-(+)-抗坏血酸,调制出包含L-(+)-抗坏血酸57质量ppm或99质量ppm的NMP:DPGDME的质量比为0.764:0.236的5质量%TBAF混合溶剂的组合物。
将通过与实施例1同样的方法测定了实施例2和3的蚀刻速度的结果示于表2中。
[表2]
表2
产业可利用性
本发明的组合物可以适合用于在将在半导体晶片的薄型化工艺中使用的粘接剂、特别是包含聚有机硅氧烷化合物作为粘接性聚合物的粘接剂的残留物从器件晶片上分解洗涤的用途。
Claims (11)
1.一种组合物,其包含:
氟化烷基季铵和氟化烷基季铵的水合物中的至少1种;
作为非质子性溶剂的(A)在氮原子上不具有活性氢的N-取代酰胺化合物、和(B)双丙甘醇二甲基醚;以及
抗氧化剂。
2.根据权利要求1所述的组合物,所述抗氧化剂包含选自二丁基羟基甲苯BHT、丁基羟基茴香醚BHA、和抗坏血酸中的至少1种。
3.根据权利要求1或2所述的组合物,所述抗氧化剂的含量为10质量ppm~1000质量ppm。
5.根据权利要求4所述的组合物,所述(A)N-取代酰胺化合物为在式(1)中R1为甲基或乙基的2-吡咯烷酮衍生物化合物。
6.根据权利要求1~5中任一项所述的组合物,所述氟化烷基季铵的含量为0.01~10质量%。
7.根据权利要求1~6中任一项所述的组合物,所述氟化烷基季铵为式(2)所示的氟化四烷基铵,
R2R3R4R5N+F- (2)
在式(2)中,R2~R5各自独立地表示选自甲基、乙基、正丙基、异丙基、和正丁基中的烷基。
8.根据权利要求1~7中任一项所述的组合物,相对于所述非质子性溶剂100质量%,所述(A)N-取代酰胺化合物的含量为50~95质量%,所述(B)双丙甘醇二甲基醚的含量为5~50质量%。
9.根据权利要求1~8中任一项所述的组合物,其为粘接性聚合物的分解洗涤组合物。
10.根据权利要求9所述的组合物,所述粘接性聚合物为聚有机硅氧烷化合物。
11.使用权利要求1~10中任一项所述的组合物将基材上的粘接性聚合物进行洗涤的方法。
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CN1526008A (zh) * | 2001-07-09 | 2004-09-01 | ���ֿ����ر��˹�˾ | 包含无氨氟化物盐的微电子清洗组合物 |
WO2006110645A2 (en) * | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
CN101270324A (zh) * | 2007-03-21 | 2008-09-24 | 综合化学特性产品有限责任公司 | 半导体蚀刻残渣清除剂和清洁剂组合物 |
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US6818608B2 (en) * | 2002-02-01 | 2004-11-16 | John C. Moore | Cured polymers dissolving compositions |
US6652665B1 (en) * | 2002-05-31 | 2003-11-25 | International Business Machines Corporation | Method of removing silicone polymer deposits from electronic components |
JP4310624B2 (ja) * | 2003-05-30 | 2009-08-12 | 三菱瓦斯化学株式会社 | 表面処理液 |
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JP2014133855A (ja) | 2012-12-11 | 2014-07-24 | Fujifilm Corp | シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法 |
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US10894935B2 (en) * | 2015-12-04 | 2021-01-19 | Samsung Electronics Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
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CN1526008A (zh) * | 2001-07-09 | 2004-09-01 | ���ֿ����ر��˹�˾ | 包含无氨氟化物盐的微电子清洗组合物 |
WO2006110645A2 (en) * | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
CN101270324A (zh) * | 2007-03-21 | 2008-09-24 | 综合化学特性产品有限责任公司 | 半导体蚀刻残渣清除剂和清洁剂组合物 |
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JPWO2021205885A1 (zh) | 2021-10-14 |
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