TW200717633A - Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method - Google Patents

Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method

Info

Publication number
TW200717633A
TW200717633A TW095119239A TW95119239A TW200717633A TW 200717633 A TW200717633 A TW 200717633A TW 095119239 A TW095119239 A TW 095119239A TW 95119239 A TW95119239 A TW 95119239A TW 200717633 A TW200717633 A TW 200717633A
Authority
TW
Taiwan
Prior art keywords
acid
cleaning
ascorbic acid
phosphonic acid
semiconductor
Prior art date
Application number
TW095119239A
Other languages
Chinese (zh)
Inventor
Tomoe Miyazawa
Yoichiro Fujita
Makoto Nakajima
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200717633A publication Critical patent/TW200717633A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

To provide a semiconductor cleaning liquid composition containing phosphonic acid and ascorbic acid, and provide a relevant method of cleaning. A composition that in the operation of semiconductor wafer processing, is used for cleaning performed to remove residues; and a relevant method of cleaning. The composition comprises at least one fluorocompound (a) selected from among hydrofluoric acid, acid ammonium fluoride and ammonium fluoride, at least one organic solvent (b), phosphonic acid (c), ascorbic acid (d), at least one basic compound (e) and water (f). Further, as an optional component of the composition, there may be added at least one mercapto-having anticorrosive agent (g).
TW095119239A 2005-06-01 2006-05-30 Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method TW200717633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005161748 2005-06-01

Publications (1)

Publication Number Publication Date
TW200717633A true TW200717633A (en) 2007-05-01

Family

ID=37481478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119239A TW200717633A (en) 2005-06-01 2006-05-30 Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method

Country Status (3)

Country Link
JP (1) JPWO2006129549A1 (en)
TW (1) TW200717633A (en)
WO (1) WO2006129549A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107210215A (en) * 2015-02-12 2017-09-26 富士胶片株式会社 The treatment fluid and the manufacture method of semiconductor-based panel products that remove liquid and minimizing technology, the treatment fluid of the compound of III V group elements, the oxidation resistance liquid of III V group elements and semiconductor substrate of the oxide of III V group elements

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
JP5871562B2 (en) * 2011-11-01 2016-03-01 東京応化工業株式会社 Stripping solution for photolithography and pattern forming method
JP6157081B2 (en) * 2012-09-24 2017-07-05 東京応化工業株式会社 Stripping solution for photolithography and pattern forming method
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR101764577B1 (en) 2015-08-13 2017-08-23 엘티씨 (주) Composition of stripping solution for liquid crystal display process photoresist
JP6681750B2 (en) * 2016-03-04 2020-04-15 東京応化工業株式会社 Cleaning liquid and cleaning method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002069495A (en) * 2000-06-16 2002-03-08 Kao Corp Detergent composition
JP4535629B2 (en) * 2001-02-21 2010-09-01 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP4159944B2 (en) * 2003-07-31 2008-10-01 花王株式会社 Resist stripping composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107210215A (en) * 2015-02-12 2017-09-26 富士胶片株式会社 The treatment fluid and the manufacture method of semiconductor-based panel products that remove liquid and minimizing technology, the treatment fluid of the compound of III V group elements, the oxidation resistance liquid of III V group elements and semiconductor substrate of the oxide of III V group elements
US11145514B2 (en) 2015-02-12 2021-10-12 Fujifilm Corporation Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product
CN107210215B (en) * 2015-02-12 2022-01-11 富士胶片株式会社 III-V group element antioxidant solution, treatment solution, oxide removing solution and method, semiconductor substrate treatment solution and method for manufacturing semiconductor substrate

Also Published As

Publication number Publication date
JPWO2006129549A1 (en) 2008-12-25
WO2006129549A1 (en) 2006-12-07

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