KR100736061B1 - 플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물 - Google Patents
플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물 Download PDFInfo
- Publication number
- KR100736061B1 KR100736061B1 KR1020027006222A KR20027006222A KR100736061B1 KR 100736061 B1 KR100736061 B1 KR 100736061B1 KR 1020027006222 A KR1020027006222 A KR 1020027006222A KR 20027006222 A KR20027006222 A KR 20027006222A KR 100736061 B1 KR100736061 B1 KR 100736061B1
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- composition
- hydroxylammonium
- compound
- substrate
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 78
- 238000004140 cleaning Methods 0.000 title claims abstract description 52
- 238000001020 plasma etching Methods 0.000 title claims description 7
- 230000009972 noncorrosive effect Effects 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 17
- 150000007514 bases Chemical class 0.000 claims abstract description 17
- -1 hydroxylammonium compound Chemical class 0.000 claims abstract description 17
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 150000001412 amines Chemical class 0.000 claims abstract description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- VGYYSIDKAKXZEE-UHFFFAOYSA-L hydroxylammonium sulfate Chemical compound O[NH3+].O[NH3+].[O-]S([O-])(=O)=O VGYYSIDKAKXZEE-UHFFFAOYSA-L 0.000 claims description 10
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- 239000004310 lactic acid Substances 0.000 claims description 8
- 235000014655 lactic acid Nutrition 0.000 claims description 8
- 235000015165 citric acid Nutrition 0.000 claims description 7
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 6
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 3
- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 claims description 3
- GWYFCOCPABKNJV-UHFFFAOYSA-M 3-Methylbutanoic acid Natural products CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- GWYFCOCPABKNJV-UHFFFAOYSA-N beta-methyl-butyric acid Natural products CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- 229960004889 salicylic acid Drugs 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- 229940005605 valeric acid Drugs 0.000 claims description 3
- XMYXFZHMOVKTFV-UHFFFAOYSA-N NO.NO.NO.OC(CC(O)=O)(CC(O)=O)C(O)=O Chemical compound NO.NO.NO.OC(CC(O)=O)(CC(O)=O)C(O)=O XMYXFZHMOVKTFV-UHFFFAOYSA-N 0.000 claims description 2
- YIVSWULVVGTVFT-UHFFFAOYSA-L hydroxyazanium;oxalate Chemical compound O[NH3+].O[NH3+].[O-]C(=O)C([O-])=O YIVSWULVVGTVFT-UHFFFAOYSA-L 0.000 claims description 2
- WTDHULULXKLSOZ-UHFFFAOYSA-N hydroxylamine hydrochloride Substances Cl.ON WTDHULULXKLSOZ-UHFFFAOYSA-N 0.000 claims description 2
- UNFDKMXBKPSFIJ-UHFFFAOYSA-N hydroxylamine;hydrofluoride Chemical compound F.ON UNFDKMXBKPSFIJ-UHFFFAOYSA-N 0.000 claims description 2
- XBUFCZMOAHHGMX-UHFFFAOYSA-N hydroxylamine;phosphoric acid Chemical compound ON.ON.ON.OP(O)(O)=O XBUFCZMOAHHGMX-UHFFFAOYSA-N 0.000 claims description 2
- WCYJQVALWQMJGE-UHFFFAOYSA-M hydroxylammonium chloride Chemical compound [Cl-].O[NH3+] WCYJQVALWQMJGE-UHFFFAOYSA-M 0.000 claims description 2
- CRJZNQFRBUFHTE-UHFFFAOYSA-N hydroxylammonium nitrate Chemical compound O[NH3+].[O-][N+]([O-])=O CRJZNQFRBUFHTE-UHFFFAOYSA-N 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- SYPLNDFSKGYUQG-UHFFFAOYSA-N hydroxylamine;2-hydroxypropanoic acid Chemical compound ON.CC(O)C(O)=O SYPLNDFSKGYUQG-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 27
- RBLWMQWAHONKNC-UHFFFAOYSA-N hydroxyazanium Chemical compound O[NH3+] RBLWMQWAHONKNC-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 16
- 230000007797 corrosion Effects 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 239000003112 inhibitor Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 6
- 229910018182 Al—Cu Inorganic materials 0.000 description 5
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000005846 sugar alcohols Chemical class 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 235000013772 propylene glycol Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PXRKCOCTEMYUEG-UHFFFAOYSA-N 5-aminoisoindole-1,3-dione Chemical compound NC1=CC=C2C(=O)NC(=O)C2=C1 PXRKCOCTEMYUEG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- 150000005206 1,2-dihydroxybenzenes Chemical class 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000003341 Bronsted base Substances 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- LKLBILXACKXSPD-UHFFFAOYSA-O diethyl(hydroxy)azanium;nitrate Chemical compound [O-][N+]([O-])=O.CC[NH+](O)CC LKLBILXACKXSPD-UHFFFAOYSA-O 0.000 description 1
- KDUGCNOFFAFOLR-UHFFFAOYSA-N diethyl(hydroxy)azanium;sulfate Chemical compound [O-]S([O-])(=O)=O.CC[NH+](O)CC.CC[NH+](O)CC KDUGCNOFFAFOLR-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Implements For Floors, Carpets, Furniture, Walls, And The Like (AREA)
Abstract
Description
Claims (20)
- (a) 물,(b) 조성물의 전체 중량을 기준으로 하여 0.01 내지 30중량%의 양으로 존재하는, 하나 이상의 하이드록실암모늄 화합물,(c) 조성물의 전체 중량을 기준으로 하여 0.01 내지 3중량%의 양으로 존재하는, 하나 이상의 염기성 화합물 및(d) 조성물의 전체 중량을 기준으로 하여 0.01 내지 10중량%의 양으로 존재하는, 시트르산, 포름산, 옥살산, 아세트산, 프로피온산, 발레르산, 이소발레르산, 말론산, 숙신산, 글루타르산, 말레산, 푸마르산, 프탈산, 1,2,3-벤젠트리카복실산, 글리콜산, 살리실산, 타르타르산, 글루콘산 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 하나 이상의 유기 카복실산을 포함하고,pH가 2 내지 6인,기판 위에 형성된 플라즈마 에칭 잔류물을 제거하는 데 유용한 세정 조성물.
- 제1항에 있어서, 하이드록실암모늄 화합물이 하이드록실암모늄 설페이트, 하이드록실암모늄 니트레이트, 하이드록실암모늄 포스페이트, 하이드록실암모늄 클로라이드, 하이드록실암모늄 플루오라이드, 하이드록실암모늄 옥살레이트, 하이드록실암모늄 시트레이트, 하이드록실암모늄 락테이트 및 이들의 혼합물로 이루어진 그룹으로부터 선택되는 조성물.
- 삭제
- 제1항에 있어서, 염기성 화합물이 아민과 4급 암모늄 하이드록사이드로 이루어진 그룹으로부터 선택되는 조성물.
- 제4항에 있어서, 염기성 화합물이 테트라메틸암모늄 하이드록사이드, 테트라에틸암모늄 하이드록사이드 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 4급 암모늄 하이드록사이드인 조성물.
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 다가 화합물(polyhydric compound)을 추가로 포함하는 조성물.
- 제9항에 있어서, 다가 화합물이 에틸렌 글리콜, 프로필렌 글리콜, 글리세롤 및 이들의 혼합물로 이루어진 그룹으로부터 선택되는 조성물.
- 삭제
- 제1항에 있어서, pH가 3 내지 4.5인 조성물.
- 제1항에 있어서,(a) 물,(b) 하이드록실암모늄 설페이트 0.2 내지 20중량%,(c) 테트라메틸암모늄 하이드록사이드 0.01 내지 0.1중량% 및(d) 시트르산 0.1 내지 3중량%를 포함하는 조성물.
- (a) 물,(b) 조성물의 전체 중량을 기준으로 하여 0.01 내지 30중량%의 양으로 존재하는, 하나 이상의 하이드록실암모늄 화합물,(c) 하나 이상의 염기성 화합물 및(d) 시트르산, 포름산, 옥살산, 아세트산, 프로피온산, 발레르산, 이소발레르산, 말론산, 숙신산, 글루타르산, 말레산, 푸마르산, 프탈산, 1,2,3-벤젠트리카복실산, 글리콜산, 살리실산, 타르타르산, 글루콘산 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 하나 이상의 카복실산을 포함하고,pH가 2 내지 6인 세정 조성물을 기판에 적용하는 단계를 포함하여, 기판으로부터 플라즈마 에칭 잔류물을 세정하는 방법.
- 제14항에 있어서, 염기성 화합물이 아민과 4급 암모늄 하이드록사이드로 이루어진 그룹으로부터 선택되는 방법.
- 제14항에 있어서, 세정 조성물이 다가 화합물을 추가로 포함하는 방법.
- 삭제
- 제14항에 있어서, 기판이 금속 기판인 방법.
- (a) 물,(b) 조성물의 전체 중량을 기준으로 하여 0.1 내지 30중량%의 양으로 존재하는, 하나 이상의 하이드록실암모늄 화합물,(c) 하나 이상의 염기성 화합물 및(d) 락트산을 포함하는,기판 위에 형성된 플라즈마 에칭 잔류물을 제거하는 데 유용한 세정 조성물.
- (a) 물,(b) 조성물의 전체 중량을 기준으로 하여 0.1 내지 30중량%의 양으로 존재하는, 하나 이상의 하이드록실암모늄 화합물,(c) 하나 이상의 염기성 화합물 및(d) 락트산으로 필수적으로 이루어진 세정 조성물을 기판에 적용하는 단계를 포함하여, 기판으로부터 플라즈마 에칭 잔류물을 세정하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/439,469 | 1999-11-15 | ||
US09/439,469 US6413923B2 (en) | 1999-11-15 | 1999-11-15 | Non-corrosive cleaning composition for removing plasma etching residues |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020044593A KR20020044593A (ko) | 2002-06-15 |
KR100736061B1 true KR100736061B1 (ko) | 2007-07-06 |
Family
ID=23744827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027006222A KR100736061B1 (ko) | 1999-11-15 | 2000-10-20 | 플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6413923B2 (ko) |
EP (1) | EP1230334B1 (ko) |
JP (1) | JP3871257B2 (ko) |
KR (1) | KR100736061B1 (ko) |
AT (1) | ATE340244T1 (ko) |
DE (1) | DE60030877T2 (ko) |
TW (1) | TWI230733B (ko) |
WO (1) | WO2001036578A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101117939B1 (ko) * | 2003-10-28 | 2012-02-29 | 사켐,인코포레이티드 | 세척액 및 에칭제 및 이의 사용 방법 |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE303881T1 (de) * | 1998-12-04 | 2005-09-15 | Farrow System Ltd | Methode um überzüge von oberflächen zu entfernen |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
WO2001097268A1 (fr) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Composion detergente |
US6498131B1 (en) * | 2000-08-07 | 2002-12-24 | Ekc Technology, Inc. | Composition for cleaning chemical mechanical planarization apparatus |
JP2002303993A (ja) * | 2001-04-04 | 2002-10-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002367956A (ja) * | 2001-04-06 | 2002-12-20 | Seiko Epson Corp | 半導体装置の電極パッド及びその製造方法 |
KR100416794B1 (ko) * | 2001-04-12 | 2004-01-31 | 삼성전자주식회사 | 금속 건식 에쳐 부품의 세정제 및 세정 방법 |
JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
JP2003007680A (ja) * | 2001-06-22 | 2003-01-10 | Kishimoto Sangyo Co Ltd | ドライエッチング残渣除去剤 |
US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP4583678B2 (ja) * | 2001-09-26 | 2010-11-17 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置用洗浄液 |
CN1240816C (zh) * | 2001-12-12 | 2006-02-08 | 海力士半导体有限公司 | 除去光致抗蚀剂的洗涤液 |
WO2003091376A1 (en) * | 2002-04-24 | 2003-11-06 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
EP1501916B1 (en) * | 2002-04-25 | 2009-06-17 | FujiFilm Electronic Materials USA, Inc. | Non-corrosive cleaning compositions for removing etch residues |
JP3516446B2 (ja) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
US6610599B1 (en) * | 2002-06-19 | 2003-08-26 | Lucent Technologies Inc. | Removal of metal veils from via holes |
US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
US7166419B2 (en) | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
US7080545B2 (en) * | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
CN1690120A (zh) * | 2004-03-01 | 2005-11-02 | 三菱瓦斯化学株式会社 | 具有高减震能力的树脂组合物 |
KR20050110470A (ko) * | 2004-05-19 | 2005-11-23 | 테크노세미켐 주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
KR100629416B1 (ko) * | 2004-07-28 | 2006-09-28 | 주식회사 삼양이엠에스 | 레지스트 수계 박리액 조성물 |
JP3994992B2 (ja) * | 2004-08-13 | 2007-10-24 | 三菱瓦斯化学株式会社 | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
JP4810928B2 (ja) * | 2004-08-18 | 2011-11-09 | 三菱瓦斯化学株式会社 | 洗浄液および洗浄法。 |
US7718009B2 (en) | 2004-08-30 | 2010-05-18 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
WO2006081406A1 (en) * | 2005-01-27 | 2006-08-03 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
US7888302B2 (en) * | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
US20060183654A1 (en) * | 2005-02-14 | 2006-08-17 | Small Robert J | Semiconductor cleaning using ionic liquids |
JP2008547202A (ja) * | 2005-06-13 | 2008-12-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法 |
KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
US7879782B2 (en) * | 2005-10-13 | 2011-02-01 | Air Products And Chemicals, Inc. | Aqueous cleaning composition and method for using same |
US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
EP1949423A1 (en) * | 2005-10-21 | 2008-07-30 | Freescale Semiconductor, Inc. | Method for removing etch residue and chemistry therefor |
US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
US20070191243A1 (en) * | 2006-02-13 | 2007-08-16 | General Chemical Performance Products, Llc | Removal of silica based etch residue using aqueous chemistry |
US20070232511A1 (en) * | 2006-03-28 | 2007-10-04 | Matthew Fisher | Cleaning solutions including preservative compounds for post CMP cleaning processes |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
US9074170B2 (en) | 2008-10-21 | 2015-07-07 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
ES2560869T3 (es) | 2008-12-23 | 2016-02-23 | The Procter & Gamble Company | Composición limpiadora de superficies duras ácida líquida |
US8765653B2 (en) | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
JP5646882B2 (ja) * | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
JP5508130B2 (ja) | 2010-05-14 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、半導体装置の製造方法及び洗浄方法 |
JP5508158B2 (ja) * | 2010-06-22 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び、半導体装置の製造方法 |
JP5674373B2 (ja) * | 2010-07-30 | 2015-02-25 | 富士フイルム株式会社 | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 |
TWI491729B (zh) * | 2011-08-31 | 2015-07-11 | Dongwoo Fine Chem Co Ltd | 清洗組成物 |
CN103975052B (zh) * | 2011-10-05 | 2016-11-09 | 安万托特性材料股份有限公司 | 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 |
CN103513523A (zh) * | 2013-09-26 | 2014-01-15 | 杨桂望 | 光刻胶清洗剂 |
US20150104952A1 (en) * | 2013-10-11 | 2015-04-16 | Ekc Technology, Inc. | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
CN105710066B (zh) * | 2016-03-16 | 2018-03-13 | 中锗科技有限公司 | 一种去除太阳能锗单晶片抛光残留药剂的方法 |
US20170369821A1 (en) * | 2016-06-24 | 2017-12-28 | Samsung Display Co., Ltd. | Cleaning composition for removing oxide and method of cleaning using the same |
CN109385638A (zh) * | 2018-12-29 | 2019-02-26 | 天津市顺超有限公司 | 一种铝洗剂及其制备和使用方法 |
US11590631B2 (en) | 2019-08-14 | 2023-02-28 | Clean Blast Systems, LLC | Wet abrasive blast machine with remote control rinse cycle |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4834912A (en) | 1986-02-13 | 1989-05-30 | United Technologies Corporation | Composition for cleaning a gas turbine engine |
JPH05336371A (ja) * | 1992-06-04 | 1993-12-17 | Seiko Epson Corp | 画像読み取り装置 |
US5336371A (en) | 1993-03-18 | 1994-08-09 | At&T Bell Laboratories | Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow |
WO1999015345A1 (en) * | 1997-09-23 | 1999-04-01 | Arch Specialty Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
Family Cites Families (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3582401A (en) | 1967-11-15 | 1971-06-01 | Mallinckrodt Chemical Works | Photosensitive resist remover compositions and methods |
JPS567360B2 (ko) | 1972-06-05 | 1981-02-17 | ||
JPS5247755B2 (ko) | 1973-10-05 | 1977-12-05 | ||
US3975215A (en) | 1973-10-10 | 1976-08-17 | Amchem Products, Inc. | Cleaner for tin plated ferrous metal surfaces |
DE2447225C2 (de) | 1974-10-03 | 1983-12-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Ablösen von positiven Photolack |
US3962497A (en) | 1975-03-11 | 1976-06-08 | Oxy Metal Industries Corporation | Method for treating polymeric substrates prior to plating |
JPS5217901A (en) | 1975-07-31 | 1977-02-10 | Mitsubishi Chem Ind | Developer for lithographic press plate |
US3962108A (en) | 1975-11-03 | 1976-06-08 | Kti Chemical, Inc. | Chemical stripping solution |
GB1573206A (en) | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
CA1075854A (en) | 1976-08-16 | 1980-04-22 | Charles W. Simons | Aerosol propellants for personal products |
US4169068A (en) | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
JPS56115368A (en) | 1980-02-15 | 1981-09-10 | San Ei Chem Ind Ltd | Releasing agent of photosensitive polymer |
US4304681A (en) | 1980-09-15 | 1981-12-08 | Shipley Company, Inc. | Novel stripping composition for positive photoresists and method of using same |
US4428871A (en) | 1981-09-23 | 1984-01-31 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4395479A (en) | 1981-09-23 | 1983-07-26 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4395348A (en) | 1981-11-23 | 1983-07-26 | Ekc Technology, Inc. | Photoresist stripping composition and method |
US4401747A (en) | 1982-09-02 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4403029A (en) | 1982-09-02 | 1983-09-06 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4401748A (en) | 1982-09-07 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
US4509989A (en) | 1983-03-25 | 1985-04-09 | United States Steel Corporation | Cleaning method for removing sulfur containing deposits from coke oven gas lines |
GB8313320D0 (en) | 1983-05-14 | 1983-06-22 | Ciba Geigy Ag | Coating compositions |
US4791043A (en) | 1983-12-20 | 1988-12-13 | Hmc Patents Holding Co., Inc. | Positive photoresist stripping composition |
US4659512A (en) | 1983-12-21 | 1987-04-21 | Pedro B. Macedo | Fixation of dissolved metal species with a complexing agent |
DE3501675A1 (de) | 1985-01-19 | 1986-07-24 | Merck Patent Gmbh, 6100 Darmstadt | Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten |
US4617251A (en) | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
JPS6235357A (ja) | 1985-08-09 | 1987-02-16 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
DE3601803A1 (de) | 1986-01-22 | 1987-07-23 | Basf Ag | Verfahren zur herstellung von waessrigen loesungen von freiem hydroxylamin |
US4680133A (en) | 1986-03-26 | 1987-07-14 | Environmental Management Associates, Inc. | Stripping composition containing an amide and a carbonate and use thereof |
JPH0721638B2 (ja) | 1986-07-18 | 1995-03-08 | 東京応化工業株式会社 | 基板の処理方法 |
JPS6350838A (ja) | 1986-08-21 | 1988-03-03 | Japan Synthetic Rubber Co Ltd | 剥離液 |
US4770713A (en) | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
US4775449A (en) | 1986-12-29 | 1988-10-04 | General Electric Company | Treatment of a polyimide surface to improve the adhesion of metal deposited thereon |
EP0301044A4 (en) | 1987-02-05 | 1989-03-29 | Macdermid Inc | ETCHING COMPOSITION FOR PHOTORESERVE. |
JPS63208043A (ja) | 1987-02-25 | 1988-08-29 | Kanto Kagaku Kk | ポジ型フオトレジスト用水溶性剥離液 |
DE3821231A1 (de) | 1987-06-25 | 1989-01-05 | Siemens Ag | Entschichterloesung fuer gehaertete positivlacke |
JP2553872B2 (ja) | 1987-07-21 | 1996-11-13 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US4824763A (en) | 1987-07-30 | 1989-04-25 | Ekc Technology, Inc. | Triamine positive photoresist stripping composition and prebaking process |
JP2578821B2 (ja) | 1987-08-10 | 1997-02-05 | 東京応化工業株式会社 | ポジ型ホトレジスト用剥離液 |
US5185235A (en) | 1987-09-09 | 1993-02-09 | Tokyo Ohka Kogyo Co., Ltd. | Remover solution for photoresist |
JP2591626B2 (ja) | 1987-09-16 | 1997-03-19 | 東京応化工業株式会社 | レジスト用剥離液 |
JPH0769618B2 (ja) | 1987-09-25 | 1995-07-31 | 旭化成工業株式会社 | フオトレジスト用剥離剤 |
JPH0769619B2 (ja) | 1987-09-25 | 1995-07-31 | 旭化成工業株式会社 | フオトレジスト剥離剤 |
JP2631849B2 (ja) | 1987-09-30 | 1997-07-16 | ナガセ電子化学 株式会社 | 剥離剤組成物 |
IL84255A (en) | 1987-10-23 | 1993-02-21 | Galram Technology Ind Ltd | Process for removal of post- baked photoresist layer |
JPH0727222B2 (ja) | 1987-10-28 | 1995-03-29 | 日本合成ゴム株式会社 | ホトレジスト用剥離液 |
JPH01133049A (ja) | 1987-11-18 | 1989-05-25 | Asahi Glass Co Ltd | レジスト剥離剤 |
US5132038A (en) | 1988-04-25 | 1992-07-21 | Macdermid, Incorporated | Composition for preparing printed circuit through-holes for metallization |
US4830772A (en) | 1988-06-10 | 1989-05-16 | Hoechst Celanese Corporation | Stripper composition for removal of protective coatings |
JPH0638162B2 (ja) | 1988-08-11 | 1994-05-18 | 工業技術院長 | レジスト剥離剤 |
DE3828513A1 (de) | 1988-08-23 | 1990-03-01 | Merck Patent Gmbh | Abloesemittel fuer fotoresists |
JP2759462B2 (ja) | 1988-11-11 | 1998-05-28 | ナガセ電子化学株式会社 | 水性剥離剤組成物 |
US4971715A (en) | 1988-11-18 | 1990-11-20 | International Business Machines Corporation | Phenolic-free stripping composition and use thereof |
JPH0696793B2 (ja) * | 1988-12-20 | 1994-11-30 | 三協アルミニウム工業株式会社 | アルミニウムの電解着色液 |
JPH02253265A (ja) | 1989-03-28 | 1990-10-12 | Nippon Zeon Co Ltd | レジスト剥離剤 |
DE3928435A1 (de) | 1989-08-24 | 1991-02-28 | Schering Ag | Verfahren zur direkten metallisierung eines nicht leitenden substrats |
US4992108A (en) | 1990-01-18 | 1991-02-12 | Ward Irl E | Photoresist stripping compositions |
US5318640A (en) | 1990-01-30 | 1994-06-07 | Henkel Corporation | Surface treatment method and composition for zinc coated steel sheet |
US5145717A (en) | 1990-01-31 | 1992-09-08 | E. I. Du Pont De Nemours And Company | Stripping method for removing resist from a printed circuit board |
US5102777A (en) | 1990-02-01 | 1992-04-07 | Ardrox Inc. | Resist stripping |
US5091103A (en) | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
JP2906590B2 (ja) | 1990-06-14 | 1999-06-21 | 三菱瓦斯化学株式会社 | アルミニウム配線半導体基板の表面処理剤 |
JP2527268B2 (ja) | 1990-09-17 | 1996-08-21 | 東京応化工業株式会社 | レジスト用剥離剤組成物 |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US5981454A (en) * | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
US5496491A (en) | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
JP3160344B2 (ja) | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
US5209858A (en) | 1991-02-06 | 1993-05-11 | E. I. Du Pont De Nemours And Company | Stabilization of choline and its derivatives against discoloration |
US5139607A (en) | 1991-04-23 | 1992-08-18 | Act, Inc. | Alkaline stripping compositions |
ES2075671T3 (es) | 1991-04-24 | 1995-10-01 | Ciba Geigy Ag | Dispersiones acuosas, fluidas de inhibidores de corrosion a base de acidos policarboxilicos. |
JPH04350660A (ja) | 1991-05-28 | 1992-12-04 | Texas Instr Japan Ltd | 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法 |
US5447575A (en) | 1991-05-31 | 1995-09-05 | The Dow Chemical Company | Degradable chelants having sulfonate groups, uses and compositions thereof |
US5234506A (en) | 1991-07-17 | 1993-08-10 | Church & Dwight Co., Inc. | Aqueous electronic circuit assembly cleaner and method |
AU1265092A (en) | 1991-07-17 | 1993-02-23 | Church & Dwight Company, Inc. | Aqueous electronic circuit assembly cleaner and method |
US5480585A (en) | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
AU4929993A (en) | 1992-09-28 | 1994-04-26 | Ducoa L.P. | Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide |
US5308745A (en) | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
US5702631A (en) * | 1992-11-24 | 1997-12-30 | Ashland Inc. | Aqueous corrosion inhibitor formulations |
JP3302120B2 (ja) | 1993-07-08 | 2002-07-15 | 関東化学株式会社 | レジスト用剥離液 |
JP3285426B2 (ja) * | 1993-08-04 | 2002-05-27 | 株式会社日立製作所 | 半導体光集積素子及びその製造方法 |
ES2166366T3 (es) * | 1993-08-19 | 2002-04-16 | Kao Corp | Composicion de detergente germicida-desinfectante. |
US6326130B1 (en) | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
US5484518A (en) | 1994-03-04 | 1996-01-16 | Shipley Company Inc. | Electroplating process |
JP3316078B2 (ja) | 1994-03-04 | 2002-08-19 | 日本表面化学株式会社 | レジスト剥離液 |
US5417802A (en) | 1994-03-18 | 1995-05-23 | At&T Corp. | Integrated circuit manufacturing |
JP3074634B2 (ja) | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
US5545353A (en) | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5472830A (en) | 1994-04-18 | 1995-12-05 | Ocg Microelectronic Materials, Inc. | Non-corrosion photoresist stripping composition |
US5507978A (en) | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5612304A (en) | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5614324A (en) * | 1995-07-24 | 1997-03-25 | Gould Electronics Inc. | Multi-layer structures containing a silane adhesion promoting layer |
US5648324A (en) | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
CA2262574C (en) | 1996-08-05 | 2004-02-24 | The Procter & Gamble Company | Stable web having enhanced extensibility and method for making same |
US6245155B1 (en) * | 1996-09-06 | 2001-06-12 | Arch Specialty Chemicals, Inc. | Method for removing photoresist and plasma etch residues |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5698503A (en) | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
US5895781A (en) * | 1997-12-22 | 1999-04-20 | S. C. Johnson & Son, Inc. | Cleaning compositions for ceramic and porcelain surfaces and related methods |
US6361712B1 (en) * | 1999-10-15 | 2002-03-26 | Arch Specialty Chemicals, Inc. | Composition for selective etching of oxides over metals |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
-
1999
- 1999-11-15 US US09/439,469 patent/US6413923B2/en not_active Expired - Lifetime
-
2000
- 2000-10-20 WO PCT/US2000/041301 patent/WO2001036578A1/en active IP Right Grant
- 2000-10-20 DE DE60030877T patent/DE60030877T2/de not_active Expired - Lifetime
- 2000-10-20 AT AT00984560T patent/ATE340244T1/de not_active IP Right Cessation
- 2000-10-20 EP EP00984560A patent/EP1230334B1/en not_active Expired - Lifetime
- 2000-10-20 JP JP2001539056A patent/JP3871257B2/ja not_active Expired - Fee Related
- 2000-10-20 KR KR1020027006222A patent/KR100736061B1/ko active IP Right Grant
- 2000-11-22 TW TW089124045A patent/TWI230733B/zh not_active IP Right Cessation
-
2002
- 2002-05-10 US US10/143,082 patent/US7001874B2/en not_active Expired - Lifetime
-
2005
- 2005-12-16 US US11/305,794 patent/US7402552B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4834912A (en) | 1986-02-13 | 1989-05-30 | United Technologies Corporation | Composition for cleaning a gas turbine engine |
JPH05336371A (ja) * | 1992-06-04 | 1993-12-17 | Seiko Epson Corp | 画像読み取り装置 |
US5336371A (en) | 1993-03-18 | 1994-08-09 | At&T Bell Laboratories | Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow |
WO1999015345A1 (en) * | 1997-09-23 | 1999-04-01 | Arch Specialty Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101117939B1 (ko) * | 2003-10-28 | 2012-02-29 | 사켐,인코포레이티드 | 세척액 및 에칭제 및 이의 사용 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1230334A1 (en) | 2002-08-14 |
DE60030877D1 (de) | 2006-11-02 |
US20010001785A1 (en) | 2001-05-24 |
WO2001036578A1 (en) | 2001-05-25 |
US6413923B2 (en) | 2002-07-02 |
ATE340244T1 (de) | 2006-10-15 |
US20060094614A1 (en) | 2006-05-04 |
US20020132745A1 (en) | 2002-09-19 |
KR20020044593A (ko) | 2002-06-15 |
JP2003515254A (ja) | 2003-04-22 |
EP1230334B1 (en) | 2006-09-20 |
EP1230334A4 (en) | 2004-08-11 |
US7402552B2 (en) | 2008-07-22 |
US7001874B2 (en) | 2006-02-21 |
TWI230733B (en) | 2005-04-11 |
JP3871257B2 (ja) | 2007-01-24 |
DE60030877T2 (de) | 2007-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100736061B1 (ko) | 플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물 | |
JP3441715B2 (ja) | 水性リンス組成物及びそれを用いた方法 | |
TWI553116B (zh) | 洗淨組合物、洗淨方法及半導體裝置之製造方法 | |
KR100323326B1 (ko) | 플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물 | |
KR100786610B1 (ko) | 플루오라이드를 포함하는 수계 잔류물 제거제 | |
US6103680A (en) | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues | |
US20060003910A1 (en) | Composition and method comprising same for removing residue from a substrate | |
JP4634718B2 (ja) | エッチング残留物を除去するための非腐食性洗浄組成物 | |
US20070207938A1 (en) | Cleaning compositions and methods of use thereof | |
KR20030035830A (ko) | 박리제조성물 | |
KR20010030460A (ko) | 레지스트 박리조성물 | |
JP2000503342A (ja) | 金属汚染ウエハ基板の平滑性維持洗浄 | |
US7682458B2 (en) | Aqueous based residue removers comprising fluoride | |
US6245155B1 (en) | Method for removing photoresist and plasma etch residues | |
WO1999051796A1 (en) | Method for removing photoresist and plasma etch residues | |
JP2004038073A (ja) | 剥離剤組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20130612 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140612 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150609 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160617 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170615 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180615 Year of fee payment: 12 |