ATE340243T1 - Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren - Google Patents

Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren

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Publication number
ATE340243T1
ATE340243T1 AT98911697T AT98911697T ATE340243T1 AT E340243 T1 ATE340243 T1 AT E340243T1 AT 98911697 T AT98911697 T AT 98911697T AT 98911697 T AT98911697 T AT 98911697T AT E340243 T1 ATE340243 T1 AT E340243T1
Authority
AT
Austria
Prior art keywords
composition
residue
ethylenediaminetetraacetic acid
substrate
removal
Prior art date
Application number
AT98911697T
Other languages
English (en)
Inventor
Wai Mun Lee
Zhefei Jessie Chen
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Application granted granted Critical
Publication of ATE340243T1 publication Critical patent/ATE340243T1/de

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    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00Chemical paint or ink removers
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2003Alcohols; Phenols
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    • C11D3/2058Dihydric alcohols aromatic
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
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    • C11D3/2065Polyhydric alcohols
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2086Hydroxy carboxylic acids-salts thereof
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/30Amines; Substituted amines ; Quaternized amines
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    • C11D3/16Organic compounds
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/263Ethers
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/265Carboxylic acids or salts thereof
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3218Alkanolamines or alkanolimines
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3227Ethers thereof
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3245Aminoacids
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
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    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/26Processing photosensitive materials; Apparatus therefor
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
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    • H10P70/27Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
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  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Semiconductors (AREA)
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  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
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AT98911697T 1997-04-04 1998-03-17 Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren ATE340243T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/833,382 US6492311B2 (en) 1990-11-05 1997-04-04 Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process

Publications (1)

Publication Number Publication Date
ATE340243T1 true ATE340243T1 (de) 2006-10-15

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AT98911697T ATE340243T1 (de) 1997-04-04 1998-03-17 Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren

Country Status (9)

Country Link
US (2) US6492311B2 (de)
EP (1) EP0975731B1 (de)
JP (1) JP4138891B2 (de)
KR (1) KR100386137B1 (de)
AT (1) ATE340243T1 (de)
DE (1) DE69835951T2 (de)
SG (1) SG120055A1 (de)
TW (1) TW416984B (de)
WO (1) WO1998045399A1 (de)

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WO1998045399A1 (en) 1998-10-15
EP0975731A4 (de) 2001-02-07
US6367486B1 (en) 2002-04-09
JP2001526836A (ja) 2001-12-18
TW416984B (en) 2001-01-01
KR100386137B1 (ko) 2003-06-09
JP4138891B2 (ja) 2008-08-27
EP0975731B1 (de) 2006-09-20
US20010006936A1 (en) 2001-07-05
DE69835951D1 (de) 2006-11-02
US6492311B2 (en) 2002-12-10
DE69835951T2 (de) 2007-06-14
EP0975731A1 (de) 2000-02-02
SG120055A1 (en) 2006-03-28
KR20010006024A (ko) 2001-01-15

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