DE69835951D1 - Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren - Google Patents

Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren

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Publication number
DE69835951D1
DE69835951D1 DE69835951T DE69835951T DE69835951D1 DE 69835951 D1 DE69835951 D1 DE 69835951D1 DE 69835951 T DE69835951 T DE 69835951T DE 69835951 T DE69835951 T DE 69835951T DE 69835951 D1 DE69835951 D1 DE 69835951D1
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Germany
Prior art keywords
composition
residue
substrate
ethylenediamine
ammonium salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69835951T
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English (en)
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DE69835951T2 (de
Inventor
Mun Lee
Jessie Chen
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EKC Technology Inc
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EKC Technology Inc
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Publication of DE69835951D1 publication Critical patent/DE69835951D1/de
Application granted granted Critical
Publication of DE69835951T2 publication Critical patent/DE69835951T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/24—Mineral surfaces, e.g. stones, frescoes, plasters, walls or concretes

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  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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DE69835951T 1997-04-04 1998-03-17 Zusammensetzung zur entfernung von rückständen bei der halbleiterherstellung auf basis von ethylendiamintetraessigsäure oder ihrem ammoniumsalz sowie verfahren Expired - Lifetime DE69835951T2 (de)

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US833382 1997-04-04
US08/833,382 US6492311B2 (en) 1990-11-05 1997-04-04 Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
PCT/US1998/005150 WO1998045399A1 (en) 1997-04-04 1998-03-17 Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process

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US20010006936A1 (en) 2001-07-05
JP4138891B2 (ja) 2008-08-27
SG120055A1 (en) 2006-03-28
KR20010006024A (ko) 2001-01-15
US6367486B1 (en) 2002-04-09
KR100386137B1 (ko) 2003-06-09
EP0975731B1 (de) 2006-09-20
EP0975731A1 (de) 2000-02-02
EP0975731A4 (de) 2001-02-07
ATE340243T1 (de) 2006-10-15
US6492311B2 (en) 2002-12-10
WO1998045399A1 (en) 1998-10-15
TW416984B (en) 2001-01-01
JP2001526836A (ja) 2001-12-18
DE69835951T2 (de) 2007-06-14

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