KR970072184A - 포토레지스트박리제 및 반도체집적회로의 제조방법 - Google Patents

포토레지스트박리제 및 반도체집적회로의 제조방법 Download PDF

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Publication number
KR970072184A
KR970072184A KR1019970013173A KR19970013173A KR970072184A KR 970072184 A KR970072184 A KR 970072184A KR 1019970013173 A KR1019970013173 A KR 1019970013173A KR 19970013173 A KR19970013173 A KR 19970013173A KR 970072184 A KR970072184 A KR 970072184A
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South Korea
Prior art keywords
photoresist
integrated circuit
semiconductor integrated
manufacturing
release agent
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KR1019970013173A
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English (en)
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KR100455299B1 (ko
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게이치 이와타
데쓰야 가리타
데쓰오 아오야마
Original Assignee
오오히라 아키라
미쓰비시 가스 가가쿠 가부시키가이샤
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Publication of KR970072184A publication Critical patent/KR970072184A/ko
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Publication of KR100455299B1 publication Critical patent/KR100455299B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

제4급암모늄수산화물 0.01～20중량%, 산화환원전위를 갖는 친핵성아민화합물을 1～80중량%, 당류 및/또는 당알코올류를 0.5～20중량%를 포함하고 잔여부가 물인 것을 특징으로 하는 포토레지스트박리제.
무기질체상에 도포된 포토레지스트를 포토레지스트박리제 사용해서 박리시키는 것을 특징으로 하는 반도체집적회로에 제조방법.
무기질기체상에 도포된 포토레지스트막, 또는 무기질기체상에 도포된 포토레지스트막을 드랑이에칭한 후에 잔존하는 포토레지스트층, 혹은 드라이에칭한 후에 애싱을 행하여 잔존하는 포토레지스트잔류물등을 저온으로 또한 단시간에 용이하게 박리시킬 수가 있다.
또 그때 배선재료를 전부 부식시키지 않고 초미세가공이 가능하다.

Description

포토레지스트박리제 및 반도체집적회로의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 레지스트막을 마스크로 해서 드라이에칭을 행하여 알루미늄배선체를 형성한 반도체집적회로를 나타내는 단면도, 제2도는 제1도의 반도체 집적회로를 산소플라즈마를 사용해서 레지스트애싱을 행하여 레지스트막을 제거한 반도체집적회로.

Claims (4)

  1. 일반식[(R1)3N-R]+.OH-(R은 탄소수 1～4의 알킬기, 또는 히드록시치환 알킬기, R1은 탄소수 1～3의 알킬기)로 표시되는 제4급암모늄수산화물 0.01～20중량%, 산화환원전위를 갖는 친핵성아민화합물을 1～80중량%, 당류 및/또는 당알코올류를 0.5～20중량%를 포함하고 잔여부가 물인 것을 특징으로 하는 포토레지스트박리제.
  2. 무기질기체상에 도포된 포토레지스트를 청구항 1에 기재된 포토레지스트박리제를 사용해서 박리시키는 것을 특징으로 하는 반도체직접회로를 제조방법.
  3. 제2항에 있어서, 무기질기체상에 포토레지스트막을 사용해서 마스크형성을 행하고 비마스크영역을 드라이 에칭하고 마스크 형성된 포토레지스트층을 박리시키는 것을 특징으로 하는 반도체집적회로의 제조방법.
  4. 제2항에 있어서, 무기질기체상에 포토레지스트막을 사용해서 마스크형성을 행하고 비마스크영역을 드라이 에칭하고 마스크 형성된 포토레지스트층을 다시또 애싱을 행하고 잔존하는 포토레지스트잔류물을 박리시키는 것을 특징으로 하는 반도체집적회로의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019970013173A 1996-04-12 1997-04-10 포토레지스트박리제및반도체집적회로의제조방법 KR100455299B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91521 1996-04-12
JP09152196A JP3614242B2 (ja) 1996-04-12 1996-04-12 フォトレジスト剥離剤及び半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
KR970072184A true KR970072184A (ko) 1997-11-07
KR100455299B1 KR100455299B1 (ko) 2005-01-15

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Country Status (9)

Country Link
US (1) US5846695A (ko)
EP (1) EP0801422B1 (ko)
JP (1) JP3614242B2 (ko)
KR (1) KR100455299B1 (ko)
DE (1) DE69717900T2 (ko)
ID (1) ID16581A (ko)
MY (1) MY129085A (ko)
SG (1) SG76509A1 (ko)
TW (1) TW351830B (ko)

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JP5885041B1 (ja) * 2014-10-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液

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Also Published As

Publication number Publication date
EP0801422B1 (en) 2002-12-18
SG76509A1 (en) 2000-11-21
ID16581A (id) 1997-10-16
JP3614242B2 (ja) 2005-01-26
DE69717900D1 (de) 2003-01-30
US5846695A (en) 1998-12-08
JPH09283507A (ja) 1997-10-31
MY129085A (en) 2007-03-30
EP0801422A2 (en) 1997-10-15
TW351830B (en) 1999-02-01
KR100455299B1 (ko) 2005-01-15
DE69717900T2 (de) 2003-04-30
EP0801422A3 (en) 1998-04-29

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