KR970063546A - 반도체장치의 제조방법 및 반도체장치세정용 세정액 - Google Patents

반도체장치의 제조방법 및 반도체장치세정용 세정액 Download PDF

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Publication number
KR970063546A
KR970063546A KR1019970001509A KR19970001509A KR970063546A KR 970063546 A KR970063546 A KR 970063546A KR 1019970001509 A KR1019970001509 A KR 1019970001509A KR 19970001509 A KR19970001509 A KR 19970001509A KR 970063546 A KR970063546 A KR 970063546A
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South Korea
Prior art keywords
semiconductor device
photoresist
manufacturing
mask
conductive film
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KR1019970001509A
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English (en)
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KR100446590B1 (ko
Inventor
마유미 하다
류우지 하세미
히데도시 이께다
데쓰오 아오야마
Original Assignee
오오히라 아키라
미쓰비시 가스 가가쿠 가부시키가이샤
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Priority claimed from JP1896496A external-priority patent/JPH09213612A/ja
Priority claimed from JP1896596A external-priority patent/JPH09213704A/ja
Application filed by 오오히라 아키라, 미쓰비시 가스 가가쿠 가부시키가이샤 filed Critical 오오히라 아키라
Publication of KR970063546A publication Critical patent/KR970063546A/ko
Application granted granted Critical
Publication of KR100446590B1 publication Critical patent/KR100446590B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체웨이퍼상에 형성한 금속도전막상에 도포된 포토레지스트를 박리하는 때 박리액으로 포토레지스트를 박리 후 과산화물을 함유하는 물인 세정액으로 세정하는 반도체장치의 제조방법, 및 그때 사용되는 반도체 장치세정용 세정액이다.
본 발명에 의하면 반도체웨이퍼상에 형성한 알루미늄계도전막상에 도포된 포토레스트막, 드라이에칭후의 포토레지스트층, 혹은 드라이에칭후에 에싱을 행하여 잔존하는 포토레지스트잔재물등을 박리제로 박리하는 반도체장치의 제조방법에 있어서 금속도전막을 전혀 부식시키는 일이없이 또한 안전한 방법으로 고정밀도의 회로배선을 제조할 수 있는 방법을 제공할 수 있다.

Description

반도체장치의 제조방법 및 반도체장치세정용 세정액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 포토레지스트막을 마스크로해서 드라이에칭을 행하여 알루미늄배선체(Al-Si-Cu층)를 형성한 반도체장치의 단면도.

Claims (10)

  1. 반도체웨이퍼상에 형성한 금속도전막상에 도포된 포토레지스트를 박리하는때 박리액으로 포토레지스트를 박리후 과산화물을 함유하는 물인 세정액으로 세정하는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 박리제로서 염기성박리액을 사용하는 것을 특징으로 하는 반도체장치의 제조방법.
  3. 제1항에 있어서, 박리제로서 불소계화합물을 함유하는 박리액을 사용하는 것을 특징으로 하는 반도체장치의 제조방법.
  4. 제1항에 있어서, 포토레지스트가 금속도전막상에 도포되어 있는 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제1항에 있어서, 포토레지스트가 사진평판에 의해 마스크형성한 후 비마스크영역을 에칭하고 마스크형성된 포토레지스트층인 것을 특징으로 하는 반도체장치의 제조방법.
  6. 제1항에 있어서, 포토레지스트가 사진평판에 의해 마스크형성한 후 비마스크영역을 드라이에칭하고 마스크형성된 포토레지스트를 다시 애싱을 행하여 잔존하는 포토레지스트잔재물인 것을 특징으로 하는 반도체장치의 제조방법.
  7. 제1항에 있어서, 포토레지스트가 사진평판에 의해 마스크형성한 후 비마스크영역을 드라이에칭하고 배선구조를 형성하는 때의 도전막 및 포토레지스트의 측면벽부에 발생하는 보호퇴적막인 것을 특징으로 하는 반도체장치의 제조방법.
  8. 제6항 또는 제7항에 있어서, 박리제로서 염기성박리제를 사용하는 것을 특징으로 하는 반도체장치의 제조방법.
  9. 제9항에 있어서, 제6항 또는 제7항에 있어서, 박리제로서 불소계화합물을 함유하는 박리액을 사용하는 것을 특징으로 하는 반도체장치의 제조방법.
  10. 과산화수소, 과산화벤조일, 과산화디알킬류, 히드로페록시드류 및 과산으로부터 선택된 1종 이상의 과산화물을 0.1％~30％ 함유하는 물인 것을 특징으로 하는 반도체장치세정용 세정액.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970001509A 1996-02-05 1997-01-20 반도체장치의제조방법및반도체장치세정용세정액 KR100446590B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP18965 1996-02-05
JP96-18964 1996-02-05
JP1896496A JPH09213612A (ja) 1996-02-05 1996-02-05 半導体装置の製造方法およびリンス液
JP18964 1996-02-05
JP96-18965 1996-02-05
JP1896596A JPH09213704A (ja) 1996-02-05 1996-02-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR970063546A true KR970063546A (ko) 1997-09-12
KR100446590B1 KR100446590B1 (ko) 2004-11-16

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Country Status (6)

Country Link
US (1) US5911836A (ko)
EP (1) EP0788143B1 (ko)
KR (1) KR100446590B1 (ko)
DE (1) DE69703052T2 (ko)
SG (1) SG60039A1 (ko)
TW (1) TW324832B (ko)

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Also Published As

Publication number Publication date
EP0788143A2 (en) 1997-08-06
EP0788143B1 (en) 2000-09-13
US5911836A (en) 1999-06-15
DE69703052T2 (de) 2001-02-15
KR100446590B1 (ko) 2004-11-16
TW324832B (en) 1998-01-11
SG60039A1 (en) 1999-02-22
EP0788143A3 (en) 1997-10-08
DE69703052D1 (de) 2000-10-19

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