DE69703052D1 - Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung eines Spülmittels zur Halbleiter-Reinigung - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung eines Spülmittels zur Halbleiter-ReinigungInfo
- Publication number
- DE69703052D1 DE69703052D1 DE69703052T DE69703052T DE69703052D1 DE 69703052 D1 DE69703052 D1 DE 69703052D1 DE 69703052 T DE69703052 T DE 69703052T DE 69703052 T DE69703052 T DE 69703052T DE 69703052 D1 DE69703052 D1 DE 69703052D1
- Authority
- DE
- Germany
- Prior art keywords
- detergent
- semiconductor
- manufacturing
- semiconductor device
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004140 cleaning Methods 0.000 title 1
- 239000003599 detergent Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1896596A JPH09213704A (ja) | 1996-02-05 | 1996-02-05 | 半導体装置の製造方法 |
JP1896496A JPH09213612A (ja) | 1996-02-05 | 1996-02-05 | 半導体装置の製造方法およびリンス液 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69703052D1 true DE69703052D1 (de) | 2000-10-19 |
DE69703052T2 DE69703052T2 (de) | 2001-02-15 |
Family
ID=26355739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69703052T Expired - Fee Related DE69703052T2 (de) | 1996-02-05 | 1997-01-21 | Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung eines Spülmittels zur Halbleiter-Reinigung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5911836A (de) |
EP (1) | EP0788143B1 (de) |
KR (1) | KR100446590B1 (de) |
DE (1) | DE69703052T2 (de) |
SG (1) | SG60039A1 (de) |
TW (1) | TW324832B (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2836562B2 (ja) * | 1996-02-08 | 1998-12-14 | 日本電気株式会社 | 半導体ウェハのウェット処理方法 |
US6082373A (en) * | 1996-07-05 | 2000-07-04 | Kabushiki Kaisha Toshiba | Cleaning method |
US7378355B2 (en) * | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
US20050034745A1 (en) * | 1997-05-09 | 2005-02-17 | Semitool, Inc. | Processing a workpiece with ozone and a halogenated additive |
US7416611B2 (en) * | 1997-05-09 | 2008-08-26 | Semitool, Inc. | Process and apparatus for treating a workpiece with gases |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
US7163588B2 (en) * | 1997-05-09 | 2007-01-16 | Semitool, Inc. | Processing a workpiece using water, a base, and ozone |
US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
EP0907203A3 (de) * | 1997-09-03 | 2000-07-12 | Siemens Aktiengesellschaft | Strukturierungsverfahren |
US6043005A (en) * | 1998-06-03 | 2000-03-28 | Haq; Noor | Polymer remover/photoresist stripper |
US6319884B2 (en) * | 1998-06-16 | 2001-11-20 | International Business Machines Corporation | Method for removal of cured polyimide and other polymers |
US6021791A (en) | 1998-06-29 | 2000-02-08 | Speedfam-Ipec Corporation | Method and apparatus for immersion cleaning of semiconductor devices |
US6146468A (en) * | 1998-06-29 | 2000-11-14 | Speedfam-Ipec Corporation | Semiconductor wafer treatment |
US6440326B1 (en) | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
DE69916728T2 (de) * | 1998-08-28 | 2005-04-28 | Mitsubishi Materials Corp. | Verfahren zur Reinigung eines Halbleitersubstrats |
TW467953B (en) * | 1998-11-12 | 2001-12-11 | Mitsubishi Gas Chemical Co | New detergent and cleaning method of using it |
DE19901002B4 (de) * | 1999-01-13 | 2005-09-22 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Schicht |
US6123088A (en) * | 1999-12-20 | 2000-09-26 | Chartered Semiconducotor Manufacturing Ltd. | Method and cleaner composition for stripping copper containing residue layers |
US6841470B2 (en) * | 1999-12-31 | 2005-01-11 | Intel Corporation | Removal of residue from a substrate |
JP2002016034A (ja) * | 2000-06-30 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置の製造方法、及び半導体装置 |
EP1211563B1 (de) * | 2000-11-30 | 2011-12-21 | Tosoh Corporation | Fotolackentfernerzusammensetzung |
US20030148624A1 (en) * | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
JP4304154B2 (ja) * | 2002-06-07 | 2009-07-29 | マリンクロッド・ベイカー・インコーポレイテッド | 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物 |
JP4282054B2 (ja) * | 2002-09-09 | 2009-06-17 | 東京応化工業株式会社 | デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法 |
KR100569515B1 (ko) | 2003-04-08 | 2006-04-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US7399365B2 (en) * | 2003-04-18 | 2008-07-15 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
US20090288688A1 (en) * | 2005-03-11 | 2009-11-26 | Ron Rulkens | Non-corrosive chemical rinse system |
US8124320B2 (en) * | 2005-12-13 | 2012-02-28 | Micron Technology, Inc. | Method and apparatus for surface tension control in advanced photolithography |
KR100720528B1 (ko) | 2005-12-29 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 세정 방법 |
KR20180112113A (ko) * | 2007-04-13 | 2018-10-11 | 솔베이(소시에떼아노님) | 반도체 웨이퍼 처리를 위한 산화제의 용도, 조성물의 용도 및 그 조성물 |
CN102569023B (zh) * | 2010-12-30 | 2016-09-14 | 安集微电子(上海)有限公司 | 一种减少金属腐蚀的清洗方法 |
US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
CN108624106B (zh) * | 2017-03-16 | 2020-07-21 | 苏州诺菲纳米科技有限公司 | 具有蚀刻功能的可剥胶及蚀刻方法 |
US11959004B2 (en) * | 2020-12-07 | 2024-04-16 | Texas Instruments Incorporated | Wet anisotropic etching of silicon |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
JP2631849B2 (ja) | 1987-09-30 | 1997-07-16 | ナガセ電子化学 株式会社 | 剥離剤組成物 |
US5037724A (en) * | 1988-02-25 | 1991-08-06 | Hoya Corporation | Peeling solution for photo- or electron beam-sensitive resin |
JP2906590B2 (ja) | 1990-06-14 | 1999-06-21 | 三菱瓦斯化学株式会社 | アルミニウム配線半導体基板の表面処理剤 |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US5453401A (en) * | 1991-05-01 | 1995-09-26 | Motorola, Inc. | Method for reducing corrosion of a metal surface containing at least aluminum and copper |
JPH05156907A (ja) * | 1991-11-30 | 1993-06-22 | Suzuki Motor Corp | エンジンのロッカーアームの構造 |
CA2096452A1 (en) * | 1992-06-19 | 1993-12-20 | William E. Elias | Inorganic oxidant compositions for removing contaminants |
EP0578507B1 (de) | 1992-07-09 | 2005-09-28 | Ekc Technology, Inc. | Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält |
JPH06184595A (ja) | 1992-12-18 | 1994-07-05 | Nitto Chem Ind Co Ltd | レジスト剥離工程用洗浄剤 |
JPH06222573A (ja) | 1993-01-26 | 1994-08-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト用剥離液 |
JP3264405B2 (ja) * | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
JP3074634B2 (ja) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
-
1997
- 1997-01-09 US US08/781,774 patent/US5911836A/en not_active Expired - Fee Related
- 1997-01-20 KR KR1019970001509A patent/KR100446590B1/ko not_active IP Right Cessation
- 1997-01-21 EP EP97100935A patent/EP0788143B1/de not_active Expired - Lifetime
- 1997-01-21 DE DE69703052T patent/DE69703052T2/de not_active Expired - Fee Related
- 1997-01-22 TW TW086100669A patent/TW324832B/zh active
- 1997-02-03 SG SG1997000242A patent/SG60039A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR100446590B1 (ko) | 2004-11-16 |
EP0788143A2 (de) | 1997-08-06 |
EP0788143B1 (de) | 2000-09-13 |
SG60039A1 (en) | 1999-02-22 |
DE69703052T2 (de) | 2001-02-15 |
TW324832B (en) | 1998-01-11 |
US5911836A (en) | 1999-06-15 |
EP0788143A3 (de) | 1997-10-08 |
KR970063546A (ko) | 1997-09-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |