DE69717900D1 - Reinigungsmittelzusammensetzung für Photoresist und Verfahren zur Herstellung eines halbleitenden integrierten Schaltkreises - Google Patents

Reinigungsmittelzusammensetzung für Photoresist und Verfahren zur Herstellung eines halbleitenden integrierten Schaltkreises

Info

Publication number
DE69717900D1
DE69717900D1 DE69717900T DE69717900T DE69717900D1 DE 69717900 D1 DE69717900 D1 DE 69717900D1 DE 69717900 T DE69717900 T DE 69717900T DE 69717900 T DE69717900 T DE 69717900T DE 69717900 D1 DE69717900 D1 DE 69717900D1
Authority
DE
Germany
Prior art keywords
photoresist
manufacturing
integrated circuit
detergent composition
semiconducting integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69717900T
Other languages
English (en)
Other versions
DE69717900T2 (de
Inventor
Keiichi Iwata
Tetsuya Karita
Tetsuo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of DE69717900D1 publication Critical patent/DE69717900D1/de
Application granted granted Critical
Publication of DE69717900T2 publication Critical patent/DE69717900T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
DE69717900T 1996-04-12 1997-04-03 Reinigungsmittelzusammensetzung für Photoresist und Verfahren zur Herstellung eines halbleitenden integrierten Schaltkreises Expired - Fee Related DE69717900T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09152196A JP3614242B2 (ja) 1996-04-12 1996-04-12 フォトレジスト剥離剤及び半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
DE69717900D1 true DE69717900D1 (de) 2003-01-30
DE69717900T2 DE69717900T2 (de) 2003-04-30

Family

ID=14028728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717900T Expired - Fee Related DE69717900T2 (de) 1996-04-12 1997-04-03 Reinigungsmittelzusammensetzung für Photoresist und Verfahren zur Herstellung eines halbleitenden integrierten Schaltkreises

Country Status (9)

Country Link
US (1) US5846695A (de)
EP (1) EP0801422B1 (de)
JP (1) JP3614242B2 (de)
KR (1) KR100455299B1 (de)
DE (1) DE69717900T2 (de)
ID (1) ID16581A (de)
MY (1) MY129085A (de)
SG (1) SG76509A1 (de)
TW (1) TW351830B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168095A (ja) * 1997-08-11 1999-03-09 Fujitsu Ltd 半導体装置の製造方法
US7579308B2 (en) 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US7547669B2 (en) 1998-07-06 2009-06-16 Ekc Technology, Inc. Remover compositions for dual damascene system
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
FR2793952B1 (fr) * 1999-05-21 2001-08-31 Commissariat Energie Atomique Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
KR100360985B1 (ko) * 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
JP2002016034A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
TWI295076B (en) * 2002-09-19 2008-03-21 Dongwoo Fine Chem Co Ltd Washing liquid for semiconductor substrate and method of producing semiconductor device
US7199059B2 (en) * 2004-10-26 2007-04-03 United Microelectronics Corp. Method for removing polymer as etching residue
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
JP5224228B2 (ja) * 2006-09-15 2013-07-03 Ｎｌｔテクノロジー株式会社 薬液を用いた基板処理方法
US8900802B2 (en) 2013-02-23 2014-12-02 International Business Machines Corporation Positive tone organic solvent developed chemically amplified resist
CN104678719A (zh) * 2013-11-28 2015-06-03 安集微电子科技(上海)有限公司 一种对金属极低腐蚀的光刻胶清洗液
JP5885041B1 (ja) * 2014-10-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3501675A1 (de) * 1985-01-19 1986-07-24 Merck Patent Gmbh, 6100 Darmstadt Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten
US5102777A (en) * 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
JP2906590B2 (ja) * 1990-06-14 1999-06-21 三菱瓦斯化学株式会社 アルミニウム配線半導体基板の表面処理剤
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
DE69333877T2 (de) * 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
JP3302120B2 (ja) * 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
JPH07283204A (ja) * 1994-04-13 1995-10-27 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤および配線パターンの形成方法
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition

Also Published As

Publication number Publication date
EP0801422B1 (de) 2002-12-18
SG76509A1 (en) 2000-11-21
ID16581A (id) 1997-10-16
JP3614242B2 (ja) 2005-01-26
US5846695A (en) 1998-12-08
JPH09283507A (ja) 1997-10-31
KR970072184A (ko) 1997-11-07
MY129085A (en) 2007-03-30
EP0801422A2 (de) 1997-10-15
TW351830B (en) 1999-02-01
KR100455299B1 (ko) 2005-01-15
DE69717900T2 (de) 2003-04-30
EP0801422A3 (de) 1998-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee