DE69503285D1 - Diamantwafer und Verfahren zur Herstellung eines Diamantwafers - Google Patents

Diamantwafer und Verfahren zur Herstellung eines Diamantwafers

Info

Publication number
DE69503285D1
DE69503285D1 DE69503285T DE69503285T DE69503285D1 DE 69503285 D1 DE69503285 D1 DE 69503285D1 DE 69503285 T DE69503285 T DE 69503285T DE 69503285 T DE69503285 T DE 69503285T DE 69503285 D1 DE69503285 D1 DE 69503285D1
Authority
DE
Germany
Prior art keywords
diamond wafer
manufacturing
diamond
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69503285T
Other languages
English (en)
Other versions
DE69503285T2 (de
Inventor
Keiichiro Tanabe
Yuichiro Seki
Akihiko Ikegaya
Naoji Fujimori
Hideaki Nakahata
Shin-Ichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69503285D1 publication Critical patent/DE69503285D1/de
Application granted granted Critical
Publication of DE69503285T2 publication Critical patent/DE69503285T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69503285T 1994-04-07 1995-04-04 Diamantwafer und Verfahren zur Herstellung eines Diamantwafers Expired - Lifetime DE69503285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9593094 1994-04-07

Publications (2)

Publication Number Publication Date
DE69503285D1 true DE69503285D1 (de) 1998-08-13
DE69503285T2 DE69503285T2 (de) 1998-11-05

Family

ID=14150997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69503285T Expired - Lifetime DE69503285T2 (de) 1994-04-07 1995-04-04 Diamantwafer und Verfahren zur Herstellung eines Diamantwafers

Country Status (4)

Country Link
US (2) US5776246A (de)
EP (1) EP0676485B1 (de)
KR (1) KR0163645B1 (de)
DE (1) DE69503285T2 (de)

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EP0676485B1 (de) * 1994-04-07 1998-07-08 Sumitomo Electric Industries, Limited Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
EP0878268B1 (de) 1994-05-23 2002-03-27 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
DE69535861D1 (de) * 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
US5880552A (en) * 1997-05-27 1999-03-09 The United States Of America As Represented By The Secretary Of The Navy Diamond or diamond like carbon coated chemical sensors and a method of making same
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JP3125046B2 (ja) * 1997-11-21 2001-01-15 工業技術院長 ダイヤモンド単結晶薄膜製造方法
US6222299B1 (en) * 1998-02-09 2001-04-24 Lucent Technologies Inc. Surface acoustic wave devices comprising large-grained diamonds and methods for making
US6416865B1 (en) 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
KR100352985B1 (ko) * 1999-04-30 2002-09-18 한국과학기술연구원 균열이 없고 평탄한 다이아몬드막 합성 방법
WO2001028090A1 (fr) * 1999-10-15 2001-04-19 Sumitomo Electric Industries, Ltd. Dispositif a ondes acoustiques de surface
US6625250B2 (en) * 1999-12-20 2003-09-23 Agere Systems Inc. Optical structures and methods for x-ray applications
WO2001069676A2 (en) * 2000-03-13 2001-09-20 Sun Microsystems, Inc. Method and apparatus for bonding substrates
US7132309B2 (en) 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
US6814130B2 (en) * 2000-10-13 2004-11-09 Chien-Min Sung Methods of making diamond tools using reverse casting of chemical vapor deposition
US6659161B1 (en) 2000-10-13 2003-12-09 Chien-Min Sung Molding process for making diamond tools
JP2002338388A (ja) * 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US6770966B2 (en) * 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
US6660329B2 (en) 2001-09-05 2003-12-09 Kennametal Inc. Method for making diamond coated cutting tool
AU2003209209A1 (en) * 2002-01-25 2003-09-02 Michigan State University Surface acoustic wave devices based on unpolished nanocrystalline diamond
JP3762893B2 (ja) * 2002-02-13 2006-04-05 株式会社国際電気通信基礎技術研究所 反射装置およびその製造方法
US6930376B2 (en) * 2002-02-13 2005-08-16 Atr Advanced Telecommunications Research Institute International Semiconductor device having a folded layer structure
US6936497B2 (en) * 2002-12-24 2005-08-30 Intel Corporation Method of forming electronic dies wherein each die has a layer of solid diamond
US6964880B2 (en) * 2003-06-27 2005-11-15 Intel Corporation Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby
US6987028B2 (en) * 2003-07-24 2006-01-17 Intel Corporation Method of fabricating a microelectronic die
JP4233467B2 (ja) * 2004-02-16 2009-03-04 株式会社神戸製鋼所 紫外線センサ及びその製造方法
CN100348774C (zh) * 2005-06-24 2007-11-14 天津理工大学 适用saw器件的纳米金刚石膜及制备方法
US20070232074A1 (en) * 2006-03-31 2007-10-04 Kramadhati Ravi Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US7846767B1 (en) 2007-09-06 2010-12-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
JP5343419B2 (ja) * 2008-06-27 2013-11-13 住友電気工業株式会社 成膜方法
US8691663B2 (en) * 2009-11-06 2014-04-08 Alliance For Sustainable Energy, Llc Methods of manipulating stressed epistructures
KR102106424B1 (ko) * 2013-09-30 2020-06-02 아다만도 나미키 세이미츠 호오세키 가부시키가이샤 다이아몬드 기판 및 다이아몬드 기판의 제조 방법
US10373725B2 (en) * 2014-11-06 2019-08-06 Ii-Vi Incorporated Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof
DE102015006514B4 (de) * 2015-05-26 2016-12-15 Condias Gmbh Verfahren zum Herstellen einer Diamant-Elektrode und Diamant-Elektrode
US10914800B2 (en) 2015-07-10 2021-02-09 Stc.Unm Magnetic resonance spectrometer
US20180061608A1 (en) * 2017-09-28 2018-03-01 Oxford Instruments X-ray Technology Inc. Window member for an x-ray device
CN112152588B (zh) * 2020-09-25 2024-01-30 福建晶安光电有限公司 声表面波滤波器及声表面波滤波器用晶片的加工方法

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EP0676485B1 (de) * 1994-04-07 1998-07-08 Sumitomo Electric Industries, Limited Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
EP0878268B1 (de) * 1994-05-23 2002-03-27 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
US5882809A (en) * 1997-01-02 1999-03-16 U.S. The United States Of America As Represented By The United States Department Of Energy Solid oxide fuel cell with multi-unit construction and prismatic design

Also Published As

Publication number Publication date
KR950030220A (ko) 1995-11-24
EP0676485B1 (de) 1998-07-08
DE69503285T2 (de) 1998-11-05
EP0676485A1 (de) 1995-10-11
US5776246A (en) 1998-07-07
US6051063A (en) 2000-04-18
KR0163645B1 (ko) 1999-02-01

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