DE69707635D1 - Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit - Google Patents

Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit

Info

Publication number
DE69707635D1
DE69707635D1 DE69707635T DE69707635T DE69707635D1 DE 69707635 D1 DE69707635 D1 DE 69707635D1 DE 69707635 T DE69707635 T DE 69707635T DE 69707635 T DE69707635 T DE 69707635T DE 69707635 D1 DE69707635 D1 DE 69707635D1
Authority
DE
Germany
Prior art keywords
underlayers
reflective
composition
making
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69707635T
Other languages
English (en)
Other versions
DE69707635T2 (de
Inventor
Kazuyoshi Mizutani
Makoto Momota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34373896A external-priority patent/JP3632875B2/ja
Priority claimed from JP04600197A external-priority patent/JP3851402B2/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69707635D1 publication Critical patent/DE69707635D1/de
Publication of DE69707635T2 publication Critical patent/DE69707635T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69707635T 1996-12-24 1997-12-23 Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit Expired - Lifetime DE69707635T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34373896A JP3632875B2 (ja) 1996-12-24 1996-12-24 反射防止膜材料用組成物
JP04600197A JP3851402B2 (ja) 1997-02-28 1997-02-28 反射防止膜材料組成物及びそれを利用したレジストパターン形成方法

Publications (2)

Publication Number Publication Date
DE69707635D1 true DE69707635D1 (de) 2001-11-29
DE69707635T2 DE69707635T2 (de) 2002-08-08

Family

ID=26386103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707635T Expired - Lifetime DE69707635T2 (de) 1996-12-24 1997-12-23 Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit

Country Status (4)

Country Link
US (1) US6165684A (de)
EP (1) EP0851300B1 (de)
KR (1) KR100522798B1 (de)
DE (1) DE69707635T2 (de)

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JP2003502449A (ja) 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
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US6670425B2 (en) * 2001-06-05 2003-12-30 Brewer Science, Inc. Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
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KR100570208B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
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KR100570209B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100611391B1 (ko) * 2003-11-06 2006-08-11 주식회사 하이닉스반도체 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7534555B2 (en) * 2003-12-10 2009-05-19 Hitachi Global Storage Technologies Netherlands B.V. Plating using copolymer
JP2005236062A (ja) * 2004-02-20 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置の製造方法
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
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Also Published As

Publication number Publication date
US6165684A (en) 2000-12-26
KR100522798B1 (ko) 2006-01-12
DE69707635T2 (de) 2002-08-08
KR19980064630A (ko) 1998-10-07
EP0851300A1 (de) 1998-07-01
EP0851300B1 (de) 2001-10-24

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Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP