DE69227405D1 - Resistmaterial und Verfahren zur Herstellung eines Musters - Google Patents
Resistmaterial und Verfahren zur Herstellung eines MustersInfo
- Publication number
- DE69227405D1 DE69227405D1 DE69227405T DE69227405T DE69227405D1 DE 69227405 D1 DE69227405 D1 DE 69227405D1 DE 69227405 T DE69227405 T DE 69227405T DE 69227405 T DE69227405 T DE 69227405T DE 69227405 D1 DE69227405 D1 DE 69227405D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- producing
- resist material
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17319791 | 1991-06-18 | ||
JP27482991 | 1991-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69227405D1 true DE69227405D1 (de) | 1998-12-03 |
DE69227405T2 DE69227405T2 (de) | 1999-06-02 |
Family
ID=26495273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69227405T Expired - Lifetime DE69227405T2 (de) | 1991-06-18 | 1992-06-09 | Resistmaterial und Verfahren zur Herstellung eines Musters |
Country Status (5)
Country | Link |
---|---|
US (2) | US5468589A (de) |
EP (1) | EP0520642B1 (de) |
JP (1) | JP3030672B2 (de) |
KR (1) | KR100255680B1 (de) |
DE (1) | DE69227405T2 (de) |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69218393T2 (de) * | 1991-12-16 | 1997-10-16 | Matsushita Electric Ind Co Ltd | Resistmaterial |
DE4202845A1 (de) * | 1992-01-31 | 1993-08-05 | Basf Ag | Strahlungsempfindliches gemisch |
EP0588544A3 (en) * | 1992-09-14 | 1994-09-28 | Wako Pure Chem Ind Ltd | Fine pattern forming material and pattern formation process |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
US6004720A (en) | 1993-12-28 | 1999-12-21 | Fujitsu Limited | Radiation sensitive material and method for forming pattern |
TW394861B (en) * | 1994-04-25 | 2000-06-21 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition |
JP2942167B2 (ja) * | 1994-09-02 | 1999-08-30 | 和光純薬工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
US5558971A (en) * | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
EP0707015B1 (de) * | 1994-10-13 | 1999-12-15 | Arch Specialty Chemicals, Inc. | Polymere |
EP0718316B1 (de) * | 1994-12-20 | 2000-04-05 | Ocg Microelectronic Materials, Inc. | Vernetzte Polymere |
DE69500616T2 (de) * | 1994-12-20 | 1998-01-02 | Ocg Microelectronics Materials | Verfahren zur Herstellung von teilgeschützten Phenolharzen |
EP0718317B1 (de) * | 1994-12-20 | 2000-02-23 | Olin Microelectronic Chemicals, Inc. | Fotolackzusammensetzungen |
EP0723201A1 (de) * | 1995-01-20 | 1996-07-24 | Ocg Microelectronic Materials, Inc. | Phenolharze mit säurelabilen Schutzgruppen |
US5849808A (en) * | 1995-04-21 | 1998-12-15 | Olin Microelectronic Chemicals, Inc. | Organic solvent soluble photoresists which are developable in aqueous alkaline solutions |
US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
JP3506817B2 (ja) * | 1995-07-26 | 2004-03-15 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
TW460753B (en) * | 1995-07-20 | 2001-10-21 | Shinetsu Chemical Co | Chemically amplified positive resist material |
US5849461A (en) * | 1995-08-01 | 1998-12-15 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition |
US5648194A (en) * | 1995-08-03 | 1997-07-15 | Shipley Company, L.L.C. | Photoresist composition comprising an alkali-soluble resin, a quinone diazide compound and a vinyl ether |
DE19533607A1 (de) * | 1995-09-11 | 1997-03-13 | Basf Ag | Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen |
JP3073149B2 (ja) * | 1995-10-30 | 2000-08-07 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
DE69628996T2 (de) * | 1995-12-21 | 2004-04-22 | Wako Pure Chemical Industries, Ltd. | Polymerzusammensetzung und Rezistmaterial |
JP3591672B2 (ja) | 1996-02-05 | 2004-11-24 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
ATE199985T1 (de) * | 1996-02-09 | 2001-04-15 | Wako Pure Chem Ind Ltd | Polymer und resistmaterial |
US5962180A (en) * | 1996-03-01 | 1999-10-05 | Jsr Corporation | Radiation sensitive composition |
JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
EP0803775B1 (de) * | 1996-04-25 | 2002-08-07 | Fuji Photo Film Co., Ltd. | Positiv-arbeitende lichtempfindliche Zusammensetzung |
US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Azエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
US6200726B1 (en) | 1996-09-16 | 2001-03-13 | International Business Machines Corporation | Optimization of space width for hybrid photoresist |
DE69738464T2 (de) * | 1996-11-14 | 2008-05-21 | Fujifilm Corp. | Photoempfindliche Zusammensetzung |
US6281318B1 (en) | 1997-03-04 | 2001-08-28 | Mitsui Chemicals, Inc. | Poly{1-(1-alkoxyalkoxy)-4-(1-methylethenyl)benzene} having narrow molecular weight distribution, its preparation process, and preparation process of poly{4-methylethenyl)phenol} having narrow molecular weight distribution |
US6048661A (en) * | 1997-03-05 | 2000-04-11 | Shin-Etsu Chemical Co., Ltd. | Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation |
US5858605A (en) * | 1997-03-08 | 1999-01-12 | Shipley Company, L.L.C. | Acid labile photoactive composition |
US6090518A (en) * | 1997-05-07 | 2000-07-18 | Mitsubishi Chemical Corporation | Radiation sensitive composition |
JP3627465B2 (ja) | 1997-08-15 | 2005-03-09 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100551653B1 (ko) * | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
US5958654A (en) * | 1997-08-25 | 1999-09-28 | Lucent Technologies Inc. | Lithographic process and energy-sensitive material for use therein |
US6120972A (en) * | 1997-09-02 | 2000-09-19 | Jsr Corporation | Radiation-sensitive resin composition |
JP3258341B2 (ja) * | 1997-09-22 | 2002-02-18 | クラリアント インターナショナル リミテッド | 新規なレジスト製造法 |
US6207353B1 (en) | 1997-12-10 | 2001-03-27 | International Business Machines Corporation | Resist formulation which minimizes blistering during etching |
JP3813721B2 (ja) * | 1997-12-26 | 2006-08-23 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
US6180320B1 (en) | 1998-03-09 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
US6159653A (en) * | 1998-04-14 | 2000-12-12 | Arch Specialty Chemicals, Inc. | Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations |
US6153733A (en) * | 1998-05-18 | 2000-11-28 | Tokyo Ohka Kogyo Co., Ltd. | (Disulfonyl diazomethane compounds) |
US6072006A (en) | 1998-11-06 | 2000-06-06 | Arch Specialty Chemicals, Inc. | Preparation of partially cross-linked polymers and their use in pattern formation |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP3348040B2 (ja) | 1999-06-04 | 2002-11-20 | 群栄化学工業株式会社 | ノボラック型フェノール樹脂 |
JP3294233B2 (ja) | 1999-06-04 | 2002-06-24 | 群栄化学工業株式会社 | フェノール樹脂 |
TW502133B (en) | 1999-06-10 | 2002-09-11 | Wako Pure Chem Ind Ltd | Resist composition, agent and method for reducing substrate dependence thereof |
US6338931B1 (en) * | 1999-08-16 | 2002-01-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
JP3969909B2 (ja) | 1999-09-27 | 2007-09-05 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
US6395446B1 (en) * | 1999-10-06 | 2002-05-28 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
TW495646B (en) | 1999-12-27 | 2002-07-21 | Fuji Photo Film Co Ltd | Positive-working radiation-sensitive composition |
US6682869B2 (en) | 2000-03-07 | 2004-01-27 | Shin-Etu Chemical Co., Ltd. | Chemical amplification, positive resist compositions |
US6838224B2 (en) | 2000-03-07 | 2005-01-04 | Shi-Etsu Chemical Co., Ltd. | Chemical amplification, positive resist compositions |
JP4562240B2 (ja) | 2000-05-10 | 2010-10-13 | 富士フイルム株式会社 | ポジ型感放射線性組成物及びそれを用いたパターン形成方法 |
JP4449176B2 (ja) * | 2000-06-30 | 2010-04-14 | 住友化学株式会社 | 化学増幅型レジスト組成物 |
US6312870B1 (en) | 2000-07-19 | 2001-11-06 | Arch Specialty Chemicals, Inc. | t-butyl cinnamate polymers and their use in photoresist compositions |
US6514664B1 (en) | 2000-07-20 | 2003-02-04 | Arch Specialty Chemicals, Inc. | Radiation sensitive compositions containing image quality and profile enhancement additives |
KR20020015948A (ko) | 2000-08-23 | 2002-03-02 | 고오사이 아끼오 | 고분자 화합물의 수산기 보호율의 정량 방법 |
KR100760146B1 (ko) | 2000-09-18 | 2007-09-18 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
AU2002243742A1 (en) * | 2001-02-01 | 2002-08-12 | Di/Dt, Inc. | Isolated drive circuitry used in switch-mode power converters |
JP2002278053A (ja) | 2001-03-16 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
US7534547B2 (en) * | 2001-03-29 | 2009-05-19 | Osaka Gas Company Limited | Optically active compound and photosensitive resin composition |
KR20030076225A (ko) | 2001-04-04 | 2003-09-26 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 |
TWI267697B (en) * | 2001-06-28 | 2006-12-01 | Tokyo Ohka Kogyo Co Ltd | Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device |
WO2003021357A1 (en) * | 2001-08-31 | 2003-03-13 | Arch Specialty Chemicals, Inc. | Free-acid containing polymers and their use in photoresists |
JP2003107707A (ja) * | 2001-09-28 | 2003-04-09 | Clariant (Japan) Kk | 化学増幅型ポジ型感放射線性樹脂組成物 |
JP2003295444A (ja) * | 2001-10-09 | 2003-10-15 | Shipley Co Llc | アセタール/脂環式ポリマーおよびフォトレジスト組成物 |
US6989224B2 (en) * | 2001-10-09 | 2006-01-24 | Shipley Company, L.L.C. | Polymers with mixed photoacid-labile groups and photoresists comprising same |
US7521168B2 (en) * | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
JP4516425B2 (ja) | 2002-06-26 | 2010-08-04 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | 放射線感受性組成物 |
JP3851594B2 (ja) | 2002-07-04 | 2006-11-29 | Azエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物およびパターン形成方法 |
WO2004067592A1 (ja) | 2003-01-31 | 2004-08-12 | Mitsubishi Rayon Co., Ltd. | レジスト用重合体およびレジスト組成物 |
JP4222850B2 (ja) | 2003-02-10 | 2009-02-12 | Spansion Japan株式会社 | 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法 |
EP1636648B1 (de) | 2003-06-05 | 2015-08-12 | FujiFilm Electronic Materials USA, Inc. | Neuartige positiv-lichtempfindliche harzzusammensetzungen |
KR20070012456A (ko) | 2004-04-07 | 2007-01-25 | 시바 스페셜티 케미칼스 홀딩 인크. | 피복 조성물의 발색방법 |
JP2006018016A (ja) * | 2004-07-01 | 2006-01-19 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2006078760A (ja) * | 2004-09-09 | 2006-03-23 | Tokyo Ohka Kogyo Co Ltd | 電子線またはeuv(極端紫外光)用レジスト組成物及びレジストパターン形成方法 |
EP1885819A2 (de) * | 2005-06-03 | 2008-02-13 | FujiFilm Electronic Materials USA, Inc. | Zusammensetzungen zur vorbehandlung |
US20070212655A1 (en) * | 2006-03-13 | 2007-09-13 | Kuo-Kuei Fu | Method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions |
US8182975B2 (en) | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
US7498116B2 (en) | 2007-03-30 | 2009-03-03 | Fujifilm Corporation | Resist composition and pattern formation method using the same |
JP5039493B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
JP4911469B2 (ja) | 2007-09-28 | 2012-04-04 | 富士フイルム株式会社 | レジスト組成物及びこれを用いたパターン形成方法 |
JP5039492B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
TW200927832A (en) * | 2007-10-16 | 2009-07-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
JP4723557B2 (ja) | 2007-12-14 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法 |
US9519216B2 (en) * | 2008-02-04 | 2016-12-13 | Fujifilm Electronic Materials U.S.A., Inc. | Positive photosensitive resin compositions |
JP5537920B2 (ja) | 2009-03-26 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法 |
WO2010117102A1 (ko) | 2009-04-09 | 2010-10-14 | 서강대학교 산학협력단 | 콜로이드 입자들을 단결정들로 정렬하는 방법 |
WO2011104127A1 (en) | 2010-02-24 | 2011-09-01 | Basf Se | Latent acids and their use |
US8926888B2 (en) * | 2011-02-25 | 2015-01-06 | Board Of Regents, The University Of Texas System | Fluorinated silazane release agents in nanoimprint lithography |
JP5817614B2 (ja) * | 2012-03-26 | 2015-11-18 | 日本ゼオン株式会社 | 2,5−ジヒドロキシベンズアルデヒド化合物の製造方法 |
JP6100500B2 (ja) * | 2012-10-26 | 2017-03-22 | 富士フイルム株式会社 | 感光性転写材料、パターン形成方法およびエッチング方法 |
US9994538B2 (en) | 2015-02-02 | 2018-06-12 | Basf Se | Latent acids and their use |
KR101891404B1 (ko) * | 2015-12-18 | 2018-08-24 | 주식회사 엘지화학 | 변성 단량체, 이를 포함하는 변성 중합체 및 이들의 제조방법 |
TWI837443B (zh) | 2019-12-31 | 2024-04-01 | 南韓商羅門哈斯電子材料韓國公司 | 塗料組成物、經塗覆的基底及形成電子裝置的方法 |
WO2024053579A1 (ja) * | 2022-09-08 | 2024-03-14 | 東京応化工業株式会社 | 感光性樹脂組成物 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE417557C (de) * | 1923-10-17 | 1925-08-13 | Henry Ramsden | Schmiervorrichtung fuer Blattfedern, insbesondere fuer Kraftfahrzeuge |
DE390288C (de) * | 1923-12-28 | 1924-02-16 | Lancia & Co | Fluessigkeitsstossdaempfer, insbesondere fuer Kraftfahrzeuge |
US3100804A (en) * | 1958-07-11 | 1963-08-13 | Monsanto Chemicals | Vinyl aromatic oxymethyl oxy compounds |
GB1231789A (de) * | 1967-09-05 | 1971-05-12 | ||
GB1277029A (en) * | 1968-11-26 | 1972-06-07 | Agfa Gevaert | Photopolymerisation of ethylenically unsaturated organic compounds |
GB1385183A (en) * | 1971-02-26 | 1975-02-26 | Agfa Gevaert | Process for the production of half-tone and line-work multi- colour photographic images |
CH621416A5 (de) * | 1975-03-27 | 1981-01-30 | Hoechst Ag | |
US4343885A (en) * | 1978-05-09 | 1982-08-10 | Dynachem Corporation | Phototropic photosensitive compositions containing fluoran colorformer |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
US4601969A (en) * | 1985-03-28 | 1986-07-22 | International Business Machines Corporation | High contrast, high resolution deep ultraviolet lithographic resist composition with diazo carbonyl compound having alpha phosphoryl substitution |
US4603101A (en) * | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
JPS62227143A (ja) * | 1986-03-28 | 1987-10-06 | Toshiba Corp | 感光性組成物 |
JPS6336602A (ja) * | 1986-07-31 | 1988-02-17 | Nippon Telegr & Teleph Corp <Ntt> | アンテナ融雪装置 |
JPH07117752B2 (ja) * | 1987-12-14 | 1995-12-18 | 株式会社日立製作所 | 感光性樹脂組成物 |
JPH01155338A (ja) * | 1987-12-14 | 1989-06-19 | Hitachi Ltd | 感光性樹脂組成物 |
JPH01154048A (ja) * | 1987-12-10 | 1989-06-16 | Toshiba Corp | 感光性組成物 |
JP2615742B2 (ja) * | 1988-01-22 | 1997-06-04 | 松下電器産業株式会社 | 感光性化合物を用いたレジスト |
US4996136A (en) * | 1988-02-25 | 1991-02-26 | At&T Bell Laboratories | Radiation sensitive materials and devices made therewith |
DE3812326A1 (de) * | 1988-04-14 | 1989-10-26 | Basf Ag | Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern |
DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
JPH0225850A (ja) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | 放射線感応性組成物およびそれを用いたパターン形成法 |
JPH0262544A (ja) * | 1988-08-30 | 1990-03-02 | Tosoh Corp | フォトレジスト組成物 |
EP0366590B2 (de) * | 1988-10-28 | 2001-03-21 | International Business Machines Corporation | Positiv arbeitende hochempfindliche Photolack-Zusammensetzung |
JPH02161436A (ja) * | 1988-12-15 | 1990-06-21 | Oki Electric Ind Co Ltd | フォトレジスト組成物及びその使用方法 |
DE3902115A1 (de) * | 1989-01-25 | 1990-08-02 | Basf Ag | Strahlungsempfindliche polymere |
JPH0383063A (ja) * | 1989-08-28 | 1991-04-09 | Kanto Chem Co Inc | パターン形成方法 |
DE3930086A1 (de) * | 1989-09-09 | 1991-03-21 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3930087A1 (de) * | 1989-09-09 | 1991-03-14 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3940965A1 (de) * | 1989-12-12 | 1991-06-13 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen |
JP2747735B2 (ja) * | 1990-01-30 | 1998-05-06 | 和光純薬工業株式会社 | レジスト材料 |
DE69118936T2 (de) * | 1990-01-30 | 1996-11-21 | Matsushita Electric Ind Co Ltd | Verfahren zur Herstellung einer Bildstruktur |
DE69125634T2 (de) * | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
JP2632066B2 (ja) * | 1990-04-06 | 1997-07-16 | 富士写真フイルム株式会社 | ポジ画像の形成方法 |
JPH0476865A (ja) * | 1990-07-18 | 1992-03-11 | Sony Corp | デジタルダビングシステム |
EP0476865A1 (de) * | 1990-08-31 | 1992-03-25 | Wako Pure Chemical Industries Ltd | Resistmaterial und Verfahren zur Herstellung eines Bildes unter Verwendung desselben |
US5403695A (en) * | 1991-04-30 | 1995-04-04 | Kabushiki Kaisha Toshiba | Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups |
US5343885A (en) * | 1992-03-04 | 1994-09-06 | Baxter International Inc. | Vacuum air lock for a closed perimeter solvent conservation system |
-
1992
- 1992-06-08 JP JP04173830A patent/JP3030672B2/ja not_active Expired - Lifetime
- 1992-06-09 DE DE69227405T patent/DE69227405T2/de not_active Expired - Lifetime
- 1992-06-09 EP EP92305260A patent/EP0520642B1/de not_active Expired - Lifetime
- 1992-06-15 US US07/898,265 patent/US5468589A/en not_active Expired - Lifetime
- 1992-06-18 KR KR1019920010597A patent/KR100255680B1/ko not_active IP Right Cessation
-
1995
- 1995-06-07 US US08/477,612 patent/US5670299A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69227405T2 (de) | 1999-06-02 |
EP0520642B1 (de) | 1998-10-28 |
KR100255680B1 (ko) | 2000-05-01 |
KR930001349A (ko) | 1993-01-16 |
JP3030672B2 (ja) | 2000-04-10 |
JPH05249682A (ja) | 1993-09-28 |
US5670299A (en) | 1997-09-23 |
EP0520642A1 (de) | 1992-12-30 |
US5468589A (en) | 1995-11-21 |
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