DE69520327D1 - Verfahren zur Herstellung eines Resistmusters - Google Patents
Verfahren zur Herstellung eines ResistmustersInfo
- Publication number
- DE69520327D1 DE69520327D1 DE69520327T DE69520327T DE69520327D1 DE 69520327 D1 DE69520327 D1 DE 69520327D1 DE 69520327 T DE69520327 T DE 69520327T DE 69520327 T DE69520327 T DE 69520327T DE 69520327 D1 DE69520327 D1 DE 69520327D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- resist pattern
- resist
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70658—Electrical testing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27913294 | 1994-11-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69520327D1 true DE69520327D1 (de) | 2001-04-19 |
DE69520327T2 DE69520327T2 (de) | 2001-07-12 |
Family
ID=17606886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69520327T Expired - Fee Related DE69520327T2 (de) | 1994-11-14 | 1995-11-14 | Verfahren zur Herstellung eines Resistmusters |
Country Status (4)
Country | Link |
---|---|
US (3) | US5756242A (de) |
EP (1) | EP0712047B1 (de) |
KR (1) | KR100197191B1 (de) |
DE (1) | DE69520327T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5943550A (en) * | 1996-03-29 | 1999-08-24 | Advanced Micro Devices, Inc. | Method of processing a semiconductor wafer for controlling drive current |
KR980005334A (ko) | 1996-06-04 | 1998-03-30 | 고노 시게오 | 노광 방법 및 노광 장치 |
JP3363046B2 (ja) * | 1997-01-08 | 2003-01-07 | 株式会社東芝 | プロセス裕度計算方法 |
US5926690A (en) * | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
US6331378B1 (en) * | 1998-02-25 | 2001-12-18 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
US6413680B1 (en) * | 1998-02-26 | 2002-07-02 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Optical recording method, optical recording medium, and optical recording system |
JP2000077292A (ja) | 1998-08-27 | 2000-03-14 | Toshiba Corp | レジストパターンの形成方法 |
US6567717B2 (en) * | 2000-01-19 | 2003-05-20 | Advanced Micro Devices, Inc. | Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devices |
US6350390B1 (en) | 2000-02-22 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control |
US6689519B2 (en) * | 2000-05-04 | 2004-02-10 | Kla-Tencor Technologies Corp. | Methods and systems for lithography process control |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US6500755B2 (en) | 2000-12-06 | 2002-12-31 | Advanced Micro Devices, Inc. | Resist trim process to define small openings in dielectric layers |
US6879400B2 (en) | 2000-12-11 | 2005-04-12 | International Business Machines Corporation | Single tone process window metrology target and method for lithographic processing |
US6632692B1 (en) | 2001-01-11 | 2003-10-14 | Advanced Micro Devices, Inc. | Automated method of controlling critical dimensions of features by controlling stepper exposure dose, and system for accomplishing same |
US6803995B2 (en) | 2001-01-17 | 2004-10-12 | International Business Machines Corporation | Focus control system |
US7382447B2 (en) * | 2001-06-26 | 2008-06-03 | Kla-Tencor Technologies Corporation | Method for determining lithographic focus and exposure |
US6707562B1 (en) | 2001-07-02 | 2004-03-16 | Advanced Micro Devices, Inc. | Method of using scatterometry measurements to control photoresist etch process |
DE10134756A1 (de) * | 2001-07-17 | 2003-04-03 | Advanced Micro Devices Inc | Ein System und Verfahren zur gesteuerten Strukturierung auf Waferbasis von Strukturelementen mit kritischen Dimensionen |
US6638671B2 (en) | 2001-10-15 | 2003-10-28 | International Business Machines Corporation | Combined layer-to-layer and within-layer overlay control system |
US6975398B2 (en) | 2001-10-15 | 2005-12-13 | International Business Machines Corporation | Method for determining semiconductor overlay on groundrule devices |
US7352453B2 (en) * | 2003-01-17 | 2008-04-01 | Kla-Tencor Technologies Corporation | Method for process optimization and control by comparison between 2 or more measured scatterometry signals |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
US6937337B2 (en) * | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
US7388677B2 (en) * | 2004-03-22 | 2008-06-17 | Timbre Technologies, Inc. | Optical metrology optimization for repetitive structures |
FR2869306B1 (fr) * | 2004-04-23 | 2006-09-15 | Commissariat Energie Atomique | Procede de fabrication de structures periodiques bi-dimensionnelles, en milieu polymere |
US20060109463A1 (en) * | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
US20060187466A1 (en) * | 2005-02-18 | 2006-08-24 | Timbre Technologies, Inc. | Selecting unit cell configuration for repeating structures in optical metrology |
US7439001B2 (en) * | 2005-08-18 | 2008-10-21 | International Business Machines Corporation | Focus blur measurement and control method |
US7474401B2 (en) * | 2005-09-13 | 2009-01-06 | International Business Machines Corporation | Multi-layer alignment and overlay target and measurement method |
US7455939B2 (en) * | 2006-07-31 | 2008-11-25 | International Business Machines Corporation | Method of improving grating test pattern for lithography monitoring and controlling |
US7858276B2 (en) * | 2007-07-06 | 2010-12-28 | Advanced Micro Devices, Inc. | Method for determining suitability of a resist in semiconductor wafer fabrication |
US7879515B2 (en) * | 2008-01-21 | 2011-02-01 | International Business Machines Corporation | Method to control semiconductor device overlay using post etch image metrology |
US8438507B2 (en) * | 2008-11-20 | 2013-05-07 | Nikon Corporation | Systems and methods for adjusting a lithographic scanner |
US9097989B2 (en) | 2009-01-27 | 2015-08-04 | International Business Machines Corporation | Target and method for mask-to-wafer CD, pattern placement and overlay measurement and control |
US9927718B2 (en) | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
EP4099091B1 (de) * | 2021-06-02 | 2024-04-10 | IMEC vzw | Musterhöhenmetrologie mit verwendung eines e-strahl-systems |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60249327A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | レジストパタ−ン検出方法 |
JPH03248414A (ja) * | 1990-02-26 | 1991-11-06 | Mitsubishi Electric Corp | 選択的な表面反応を利用した微細パターンの形成方法 |
JPH06267824A (ja) * | 1993-03-15 | 1994-09-22 | Nikon Corp | 露光方法 |
-
1995
- 1995-11-04 KR KR1019950039730A patent/KR100197191B1/ko not_active IP Right Cessation
- 1995-11-13 US US08/557,701 patent/US5756242A/en not_active Expired - Fee Related
- 1995-11-14 DE DE69520327T patent/DE69520327T2/de not_active Expired - Fee Related
- 1995-11-14 EP EP95117948A patent/EP0712047B1/de not_active Expired - Lifetime
-
1997
- 1997-07-09 US US08/890,685 patent/US5773174A/en not_active Expired - Fee Related
- 1997-07-09 US US08/890,680 patent/US5763124A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0712047B1 (de) | 2001-03-14 |
US5756242A (en) | 1998-05-26 |
KR960019491A (ko) | 1996-06-17 |
KR100197191B1 (ko) | 1999-06-15 |
DE69520327T2 (de) | 2001-07-12 |
US5763124A (en) | 1998-06-09 |
EP0712047A3 (de) | 1997-05-28 |
EP0712047A2 (de) | 1996-05-15 |
US5773174A (en) | 1998-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |