DE69434837D1 - Verfahren zur Herstellung einer photolithographischen Maske - Google Patents
Verfahren zur Herstellung einer photolithographischen MaskeInfo
- Publication number
- DE69434837D1 DE69434837D1 DE69434837T DE69434837T DE69434837D1 DE 69434837 D1 DE69434837 D1 DE 69434837D1 DE 69434837 T DE69434837 T DE 69434837T DE 69434837 T DE69434837 T DE 69434837T DE 69434837 D1 DE69434837 D1 DE 69434837D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- photolithographic mask
- photolithographic
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
- G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30233993 | 1993-11-08 | ||
JP30233993 | 1993-11-08 | ||
JP6911394A JP3339174B2 (ja) | 1993-11-08 | 1994-03-14 | フォトマスクの製造方法、露光方法及び半導体装置の製造方法 |
JP6911394 | 1994-03-14 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69434837D1 true DE69434837D1 (de) | 2006-10-12 |
DE69434837T2 DE69434837T2 (de) | 2007-03-08 |
DE69434837T8 DE69434837T8 (de) | 2007-06-14 |
Family
ID=26410296
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69435070T Expired - Lifetime DE69435070T2 (de) | 1993-11-08 | 1994-11-07 | Verfahren zur Herstellung einer photolithographischen Maske |
DE69435069T Expired - Lifetime DE69435069T2 (de) | 1993-11-08 | 1994-11-07 | Verfahren zur Herstellung einer photolithographischen Maske |
DE69434837T Active DE69434837T8 (de) | 1993-11-08 | 1994-11-07 | Verfahren zur Herstellung einer photolithographischen Maske |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69435070T Expired - Lifetime DE69435070T2 (de) | 1993-11-08 | 1994-11-07 | Verfahren zur Herstellung einer photolithographischen Maske |
DE69435069T Expired - Lifetime DE69435069T2 (de) | 1993-11-08 | 1994-11-07 | Verfahren zur Herstellung einer photolithographischen Maske |
Country Status (6)
Country | Link |
---|---|
US (2) | US5558963A (de) |
EP (3) | EP0656565B1 (de) |
JP (1) | JP3339174B2 (de) |
KR (1) | KR100297909B1 (de) |
DE (3) | DE69435070T2 (de) |
TW (1) | TW267236B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100282695B1 (ko) * | 1998-04-28 | 2001-03-02 | 윤종용 | 반도체 장치의 제조 방법 |
IL125338A0 (en) | 1998-07-14 | 1999-03-12 | Nova Measuring Instr Ltd | Method and apparatus for monitoring and control of photolithography exposure and processing tools |
EP0973068A3 (de) * | 1998-07-14 | 2001-05-30 | Nova Measuring Instruments Limited | Methode und System zur Steuerung eines photolithographischen Verfahrens |
US6401236B1 (en) * | 1999-04-05 | 2002-06-04 | Micron Technology Inc. | Method to eliminate side lobe printing of attenuated phase shift |
US8531678B2 (en) | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
IL130874A (en) | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
JP3425414B2 (ja) * | 2000-08-30 | 2003-07-14 | 株式会社東芝 | マスクの製造方法 |
TW502132B (en) * | 2000-08-30 | 2002-09-11 | Toshiba Corp | Method for producing photomask |
US6432588B1 (en) | 2000-12-04 | 2002-08-13 | Taiwan Semiconductor Manufacturing Company | Method of forming an improved attenuated phase-shifting photomask |
US6578190B2 (en) * | 2001-01-11 | 2003-06-10 | International Business Machines Corporation | Process window based optical proximity correction of lithographic images |
JP3708058B2 (ja) | 2002-02-28 | 2005-10-19 | 株式会社東芝 | フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法 |
TWI252516B (en) | 2002-03-12 | 2006-04-01 | Toshiba Corp | Determination method of process parameter and method for determining at least one of process parameter and design rule |
JP4018438B2 (ja) * | 2002-04-30 | 2007-12-05 | キヤノン株式会社 | 半導体露光装置を管理する管理システム |
JP2004157475A (ja) | 2002-11-08 | 2004-06-03 | Toshiba Corp | 集積回路のパターン設計方法、露光マスクの作成方法、露光マスク、および集積回路装置の製造方法 |
US7119893B2 (en) * | 2003-04-10 | 2006-10-10 | Accent Optical Technologies, Inc. | Determination of center of focus by parameter variability analysis |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
WO2005111874A2 (en) * | 2004-05-07 | 2005-11-24 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
US7496882B2 (en) * | 2004-12-22 | 2009-02-24 | Asml Netherlands B.V. | Optimization to avoid sidelobe printing |
JP4690795B2 (ja) * | 2005-06-28 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造方法 |
KR100958714B1 (ko) | 2005-08-08 | 2010-05-18 | 브라이언 테크놀로지스, 인코포레이티드 | 리소그래피 공정의 포커스-노광 모델을 생성하는 시스템 및방법 |
ATE467149T1 (de) * | 2005-10-03 | 2010-05-15 | Imec | Alternierende phasenmaske |
JP4709639B2 (ja) | 2005-12-12 | 2011-06-22 | 株式会社東芝 | マスクパターン評価方法及び評価装置 |
EP1804119A1 (de) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Verfahren zur Herstellung gedämpfter Phasenverschiebungsmasken und daraus erhaltene Vorrichtungen |
US8056022B2 (en) | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
US7739650B2 (en) * | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
JP2009302206A (ja) | 2008-06-11 | 2009-12-24 | Canon Inc | 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法 |
US7966583B2 (en) * | 2008-07-08 | 2011-06-21 | Synopsys, Inc. | Method and apparatus for determining the effect of process variations |
JP4838866B2 (ja) * | 2009-02-10 | 2011-12-14 | キヤノン株式会社 | 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。 |
JP5686567B2 (ja) * | 2010-10-19 | 2015-03-18 | キヤノン株式会社 | 露光条件及びマスクパターンを決定するプログラム及び方法 |
JP5835968B2 (ja) * | 2011-07-05 | 2015-12-24 | キヤノン株式会社 | 決定方法、プログラム及び露光方法 |
CN103345125B (zh) * | 2013-06-27 | 2015-04-08 | 上海华力微电子有限公司 | 增强光刻工艺能力的系统及方法 |
KR102170143B1 (ko) | 2013-08-19 | 2020-10-26 | 삼성전자주식회사 | 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법 |
CN109473391A (zh) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | 空气桥制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890239A (en) * | 1987-10-20 | 1989-12-26 | Shipley Company, Inc. | Lithographic process analysis and control system |
JP3245882B2 (ja) * | 1990-10-24 | 2002-01-15 | 株式会社日立製作所 | パターン形成方法、および投影露光装置 |
-
1994
- 1994-03-14 JP JP6911394A patent/JP3339174B2/ja not_active Expired - Fee Related
- 1994-11-04 US US08/336,656 patent/US5558963A/en not_active Expired - Lifetime
- 1994-11-04 KR KR1019940028834A patent/KR100297909B1/ko not_active IP Right Cessation
- 1994-11-07 DE DE69435070T patent/DE69435070T2/de not_active Expired - Lifetime
- 1994-11-07 DE DE69435069T patent/DE69435069T2/de not_active Expired - Lifetime
- 1994-11-07 EP EP94117536A patent/EP0656565B1/de not_active Expired - Lifetime
- 1994-11-07 TW TW083110267A patent/TW267236B/zh not_active IP Right Cessation
- 1994-11-07 EP EP98124870A patent/EP0905566B9/de not_active Expired - Lifetime
- 1994-11-07 DE DE69434837T patent/DE69434837T8/de active Active
- 1994-11-07 EP EP98124872A patent/EP0907111B9/de not_active Expired - Lifetime
-
1996
- 1996-05-16 US US08/648,665 patent/US5723235A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100297909B1 (ko) | 2001-10-24 |
DE69434837T2 (de) | 2007-03-08 |
DE69434837T8 (de) | 2007-06-14 |
DE69435070D1 (de) | 2008-03-13 |
US5558963A (en) | 1996-09-24 |
EP0656565B1 (de) | 2006-08-30 |
EP0907111A2 (de) | 1999-04-07 |
US5723235A (en) | 1998-03-03 |
EP0905566A2 (de) | 1999-03-31 |
JPH07175204A (ja) | 1995-07-14 |
DE69435069D1 (de) | 2008-03-13 |
EP0656565A1 (de) | 1995-06-07 |
DE69435070T2 (de) | 2009-01-15 |
EP0905566B1 (de) | 2008-01-23 |
EP0907111B9 (de) | 2008-05-28 |
EP0907111A3 (de) | 1999-04-14 |
EP0905566B9 (de) | 2008-05-28 |
EP0905566A3 (de) | 1999-04-14 |
KR950015548A (ko) | 1995-06-17 |
EP0907111B1 (de) | 2008-01-23 |
DE69435069T2 (de) | 2009-01-15 |
TW267236B (de) | 1996-01-01 |
JP3339174B2 (ja) | 2002-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Inventor name: TSUDAKA, KEISUKE, TOKYO, JP Inventor name: SUGAWARA, MINORU, TOKYO, JP |
|
8364 | No opposition during term of opposition |