DE69434837T8 - Verfahren zur Herstellung einer photolithographischen Maske - Google Patents

Verfahren zur Herstellung einer photolithographischen Maske Download PDF

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Publication number
DE69434837T8
DE69434837T8 DE69434837T DE69434837T DE69434837T8 DE 69434837 T8 DE69434837 T8 DE 69434837T8 DE 69434837 T DE69434837 T DE 69434837T DE 69434837 T DE69434837 T DE 69434837T DE 69434837 T8 DE69434837 T8 DE 69434837T8
Authority
DE
Germany
Prior art keywords
producing
photolithographic mask
photolithographic
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE69434837T
Other languages
English (en)
Other versions
DE69434837T2 (de
DE69434837D1 (de
Inventor
Keisuke Tsudaka
Minoru Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69434837D1 publication Critical patent/DE69434837D1/de
Publication of DE69434837T2 publication Critical patent/DE69434837T2/de
Application granted granted Critical
Publication of DE69434837T8 publication Critical patent/DE69434837T8/de
Active legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
DE69434837T 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske Active DE69434837T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP30233993 1993-11-08
JP30233993 1993-11-08
JP6911394 1994-03-14
JP6911394A JP3339174B2 (ja) 1993-11-08 1994-03-14 フォトマスクの製造方法、露光方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
DE69434837D1 DE69434837D1 (de) 2006-10-12
DE69434837T2 DE69434837T2 (de) 2007-03-08
DE69434837T8 true DE69434837T8 (de) 2007-06-14

Family

ID=26410296

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69435070T Expired - Lifetime DE69435070T2 (de) 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske
DE69435069T Expired - Lifetime DE69435069T2 (de) 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske
DE69434837T Active DE69434837T8 (de) 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69435070T Expired - Lifetime DE69435070T2 (de) 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske
DE69435069T Expired - Lifetime DE69435069T2 (de) 1993-11-08 1994-11-07 Verfahren zur Herstellung einer photolithographischen Maske

Country Status (6)

Country Link
US (2) US5558963A (de)
EP (3) EP0907111B9 (de)
JP (1) JP3339174B2 (de)
KR (1) KR100297909B1 (de)
DE (3) DE69435070T2 (de)
TW (1) TW267236B (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282695B1 (ko) * 1998-04-28 2001-03-02 윤종용 반도체 장치의 제조 방법
IL125338A0 (en) 1998-07-14 1999-03-12 Nova Measuring Instr Ltd Method and apparatus for monitoring and control of photolithography exposure and processing tools
JP4601744B2 (ja) * 1998-07-14 2010-12-22 ノバ メジャリング インスツルメンツ リミテッド フォトリソグラフィープロセスを制御するための方法およびシステム
US6401236B1 (en) * 1999-04-05 2002-06-04 Micron Technology Inc. Method to eliminate side lobe printing of attenuated phase shift
IL130874A (en) 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US8531678B2 (en) 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
JP3425414B2 (ja) * 2000-08-30 2003-07-14 株式会社東芝 マスクの製造方法
TW502132B (en) * 2000-08-30 2002-09-11 Toshiba Corp Method for producing photomask
US6432588B1 (en) 2000-12-04 2002-08-13 Taiwan Semiconductor Manufacturing Company Method of forming an improved attenuated phase-shifting photomask
US6578190B2 (en) * 2001-01-11 2003-06-10 International Business Machines Corporation Process window based optical proximity correction of lithographic images
JP3708058B2 (ja) 2002-02-28 2005-10-19 株式会社東芝 フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法
TWI252516B (en) 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP4018438B2 (ja) * 2002-04-30 2007-12-05 キヤノン株式会社 半導体露光装置を管理する管理システム
JP2004157475A (ja) 2002-11-08 2004-06-03 Toshiba Corp 集積回路のパターン設計方法、露光マスクの作成方法、露光マスク、および集積回路装置の製造方法
US7119893B2 (en) * 2003-04-10 2006-10-10 Accent Optical Technologies, Inc. Determination of center of focus by parameter variability analysis
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US8799830B2 (en) * 2004-05-07 2014-08-05 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
US7496882B2 (en) * 2004-12-22 2009-02-24 Asml Netherlands B.V. Optimization to avoid sidelobe printing
JP4690795B2 (ja) * 2005-06-28 2011-06-01 株式会社東芝 半導体装置の製造方法
CN101258498B (zh) 2005-08-08 2011-04-13 Asml荷兰有限公司 用于形成光刻工艺的焦点曝光模型的系统和方法
DE602005021106D1 (de) * 2005-10-03 2010-06-17 Imec Alternierende Phasenmaske
JP4709639B2 (ja) 2005-12-12 2011-06-22 株式会社東芝 マスクパターン評価方法及び評価装置
EP1804119A1 (de) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Verfahren zur Herstellung gedämpfter Phasenverschiebungsmasken und daraus erhaltene Vorrichtungen
US8056022B2 (en) * 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
JP2009302206A (ja) 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
US7966583B2 (en) * 2008-07-08 2011-06-21 Synopsys, Inc. Method and apparatus for determining the effect of process variations
JP4838866B2 (ja) * 2009-02-10 2011-12-14 キヤノン株式会社 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
CN103345125B (zh) * 2013-06-27 2015-04-08 上海华力微电子有限公司 增强光刻工艺能力的系统及方法
KR102170143B1 (ko) 2013-08-19 2020-10-26 삼성전자주식회사 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법
CN109473391A (zh) * 2018-11-12 2019-03-15 苏州汉骅半导体有限公司 空气桥制造方法

Family Cites Families (2)

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US4890239A (en) * 1987-10-20 1989-12-26 Shipley Company, Inc. Lithographic process analysis and control system
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置

Also Published As

Publication number Publication date
DE69435069T2 (de) 2009-01-15
US5558963A (en) 1996-09-24
DE69435069D1 (de) 2008-03-13
EP0905566A2 (de) 1999-03-31
US5723235A (en) 1998-03-03
EP0656565B1 (de) 2006-08-30
KR950015548A (ko) 1995-06-17
DE69434837T2 (de) 2007-03-08
EP0907111B1 (de) 2008-01-23
EP0907111A2 (de) 1999-04-07
DE69434837D1 (de) 2006-10-12
EP0656565A1 (de) 1995-06-07
EP0905566B9 (de) 2008-05-28
EP0907111A3 (de) 1999-04-14
EP0905566B1 (de) 2008-01-23
EP0907111B9 (de) 2008-05-28
JP3339174B2 (ja) 2002-10-28
DE69435070D1 (de) 2008-03-13
TW267236B (de) 1996-01-01
DE69435070T2 (de) 2009-01-15
KR100297909B1 (ko) 2001-10-24
EP0905566A3 (de) 1999-04-14
JPH07175204A (ja) 1995-07-14

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: TSUDAKA, KEISUKE, TOKYO, JP

Inventor name: SUGAWARA, MINORU, TOKYO, JP

8364 No opposition during term of opposition