DE69227405T2 - Resistmaterial und Verfahren zur Herstellung eines Musters - Google Patents
Resistmaterial und Verfahren zur Herstellung eines MustersInfo
- Publication number
- DE69227405T2 DE69227405T2 DE69227405T DE69227405T DE69227405T2 DE 69227405 T2 DE69227405 T2 DE 69227405T2 DE 69227405 T DE69227405 T DE 69227405T DE 69227405 T DE69227405 T DE 69227405T DE 69227405 T2 DE69227405 T2 DE 69227405T2
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- producing
- resist material
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17319791 | 1991-06-18 | ||
JP27482991 | 1991-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69227405D1 DE69227405D1 (de) | 1998-12-03 |
DE69227405T2 true DE69227405T2 (de) | 1999-06-02 |
Family
ID=26495273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69227405T Expired - Lifetime DE69227405T2 (de) | 1991-06-18 | 1992-06-09 | Resistmaterial und Verfahren zur Herstellung eines Musters |
Country Status (5)
Country | Link |
---|---|
US (2) | US5468589A (de) |
EP (1) | EP0520642B1 (de) |
JP (1) | JP3030672B2 (de) |
KR (1) | KR100255680B1 (de) |
DE (1) | DE69227405T2 (de) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69218393T2 (de) * | 1991-12-16 | 1997-10-16 | Wako Pure Chem Ind Ltd | Resistmaterial |
DE4202845A1 (de) * | 1992-01-31 | 1993-08-05 | Basf Ag | Strahlungsempfindliches gemisch |
EP0588544A3 (en) * | 1992-09-14 | 1994-09-28 | Wako Pure Chem Ind Ltd | Fine pattern forming material and pattern formation process |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
US6004720A (en) | 1993-12-28 | 1999-12-21 | Fujitsu Limited | Radiation sensitive material and method for forming pattern |
TW394861B (en) * | 1994-04-25 | 2000-06-21 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition |
US5558971A (en) | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
JP2942167B2 (ja) * | 1994-09-02 | 1999-08-30 | 和光純薬工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
DE69513929T2 (de) * | 1994-10-13 | 2000-07-20 | Arch Speciality Chemicals Inc | Polymere |
DE69500616T2 (de) * | 1994-12-20 | 1998-01-02 | Ocg Microelectronics Materials | Verfahren zur Herstellung von teilgeschützten Phenolharzen |
DE69515163D1 (de) * | 1994-12-20 | 2000-03-30 | Olin Microelectronic Chem Inc | Fotolackzusammensetzungen |
DE69516101T2 (de) * | 1994-12-20 | 2001-01-11 | Arch Speciality Chemicals Inc | Vernetzte Polymere |
EP0723201A1 (de) * | 1995-01-20 | 1996-07-24 | Ocg Microelectronic Materials, Inc. | Phenolharze mit säurelabilen Schutzgruppen |
EP0738744B1 (de) * | 1995-04-21 | 2002-11-27 | Arch Specialty Chemicals, Inc. | Vernetzte Polymere |
US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
TW460753B (en) * | 1995-07-20 | 2001-10-21 | Shinetsu Chemical Co | Chemically amplified positive resist material |
JP3506817B2 (ja) * | 1995-07-26 | 2004-03-15 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
US5849461A (en) * | 1995-08-01 | 1998-12-15 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition |
US5648194A (en) * | 1995-08-03 | 1997-07-15 | Shipley Company, L.L.C. | Photoresist composition comprising an alkali-soluble resin, a quinone diazide compound and a vinyl ether |
DE19533607A1 (de) * | 1995-09-11 | 1997-03-13 | Basf Ag | Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen |
JP3073149B2 (ja) * | 1995-10-30 | 2000-08-07 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
EP0780732B1 (de) | 1995-12-21 | 2003-07-09 | Wako Pure Chemical Industries Ltd | Polymerzusammensetzung und Rezistmaterial |
JP3591672B2 (ja) | 1996-02-05 | 2004-11-24 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
EP0789279B2 (de) | 1996-02-09 | 2004-12-08 | Wako Pure Chemical Industries Ltd | Polymer und Resistmaterial |
US5962180A (en) * | 1996-03-01 | 1999-10-05 | Jsr Corporation | Radiation sensitive composition |
JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
TW482943B (en) * | 1996-04-25 | 2002-04-11 | Fuji Photo Film Co Ltd | Positive working photosensitive composition |
US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Azエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
US6200726B1 (en) | 1996-09-16 | 2001-03-13 | International Business Machines Corporation | Optimization of space width for hybrid photoresist |
US6110640A (en) * | 1996-11-14 | 2000-08-29 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US6281318B1 (en) | 1997-03-04 | 2001-08-28 | Mitsui Chemicals, Inc. | Poly{1-(1-alkoxyalkoxy)-4-(1-methylethenyl)benzene} having narrow molecular weight distribution, its preparation process, and preparation process of poly{4-methylethenyl)phenol} having narrow molecular weight distribution |
US6048661A (en) * | 1997-03-05 | 2000-04-11 | Shin-Etsu Chemical Co., Ltd. | Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation |
US5858605A (en) * | 1997-03-08 | 1999-01-12 | Shipley Company, L.L.C. | Acid labile photoactive composition |
US6090518A (en) * | 1997-05-07 | 2000-07-18 | Mitsubishi Chemical Corporation | Radiation sensitive composition |
JP3627465B2 (ja) | 1997-08-15 | 2005-03-09 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100551653B1 (ko) * | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
US5958654A (en) * | 1997-08-25 | 1999-09-28 | Lucent Technologies Inc. | Lithographic process and energy-sensitive material for use therein |
US6120972A (en) * | 1997-09-02 | 2000-09-19 | Jsr Corporation | Radiation-sensitive resin composition |
DE69809387T2 (de) * | 1997-09-22 | 2003-09-11 | Clariant Finance Bvi Ltd | Verfahren zur herstellung von resisten |
US6207353B1 (en) | 1997-12-10 | 2001-03-27 | International Business Machines Corporation | Resist formulation which minimizes blistering during etching |
JP3813721B2 (ja) * | 1997-12-26 | 2006-08-23 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
US6180320B1 (en) | 1998-03-09 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
JP3955384B2 (ja) | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
US6159653A (en) * | 1998-04-14 | 2000-12-12 | Arch Specialty Chemicals, Inc. | Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations |
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JP3294233B2 (ja) | 1999-06-04 | 2002-06-24 | 群栄化学工業株式会社 | フェノール樹脂 |
JP3348040B2 (ja) | 1999-06-04 | 2002-11-20 | 群栄化学工業株式会社 | ノボラック型フェノール樹脂 |
TW502133B (en) | 1999-06-10 | 2002-09-11 | Wako Pure Chem Ind Ltd | Resist composition, agent and method for reducing substrate dependence thereof |
US6338931B1 (en) * | 1999-08-16 | 2002-01-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
JP3969909B2 (ja) | 1999-09-27 | 2007-09-05 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
US6395446B1 (en) * | 1999-10-06 | 2002-05-28 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
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JP4562240B2 (ja) | 2000-05-10 | 2010-10-13 | 富士フイルム株式会社 | ポジ型感放射線性組成物及びそれを用いたパターン形成方法 |
JP4449176B2 (ja) * | 2000-06-30 | 2010-04-14 | 住友化学株式会社 | 化学増幅型レジスト組成物 |
US6312870B1 (en) | 2000-07-19 | 2001-11-06 | Arch Specialty Chemicals, Inc. | t-butyl cinnamate polymers and their use in photoresist compositions |
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US20030232273A1 (en) * | 2001-10-09 | 2003-12-18 | Shipley Company, L.L.C. | Acetal/alicyclic polymers and photoresist compositions |
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EP1636648B1 (de) | 2003-06-05 | 2015-08-12 | FujiFilm Electronic Materials USA, Inc. | Neuartige positiv-lichtempfindliche harzzusammensetzungen |
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JP2006018016A (ja) * | 2004-07-01 | 2006-01-19 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2006078760A (ja) * | 2004-09-09 | 2006-03-23 | Tokyo Ohka Kogyo Co Ltd | 電子線またはeuv(極端紫外光)用レジスト組成物及びレジストパターン形成方法 |
KR20080018899A (ko) * | 2005-06-03 | 2008-02-28 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 전처리 조성물 |
US20070212655A1 (en) * | 2006-03-13 | 2007-09-13 | Kuo-Kuei Fu | Method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions |
US8182975B2 (en) | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
US7498116B2 (en) | 2007-03-30 | 2009-03-03 | Fujifilm Corporation | Resist composition and pattern formation method using the same |
JP4911469B2 (ja) | 2007-09-28 | 2012-04-04 | 富士フイルム株式会社 | レジスト組成物及びこれを用いたパターン形成方法 |
JP5039493B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
JP5039492B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
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JP4723557B2 (ja) | 2007-12-14 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法 |
US9519216B2 (en) * | 2008-02-04 | 2016-12-13 | Fujifilm Electronic Materials U.S.A., Inc. | Positive photosensitive resin compositions |
JP5537920B2 (ja) | 2009-03-26 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法 |
WO2010117102A1 (ko) | 2009-04-09 | 2010-10-14 | 서강대학교 산학협력단 | 콜로이드 입자들을 단결정들로 정렬하는 방법 |
CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
US8926888B2 (en) * | 2011-02-25 | 2015-01-06 | Board Of Regents, The University Of Texas System | Fluorinated silazane release agents in nanoimprint lithography |
JP5817614B2 (ja) * | 2012-03-26 | 2015-11-18 | 日本ゼオン株式会社 | 2,5−ジヒドロキシベンズアルデヒド化合物の製造方法 |
JP6100500B2 (ja) | 2012-10-26 | 2017-03-22 | 富士フイルム株式会社 | 感光性転写材料、パターン形成方法およびエッチング方法 |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
KR101891404B1 (ko) | 2015-12-18 | 2018-08-24 | 주식회사 엘지화학 | 변성 단량체, 이를 포함하는 변성 중합체 및 이들의 제조방법 |
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-
1992
- 1992-06-08 JP JP04173830A patent/JP3030672B2/ja not_active Expired - Lifetime
- 1992-06-09 DE DE69227405T patent/DE69227405T2/de not_active Expired - Lifetime
- 1992-06-09 EP EP92305260A patent/EP0520642B1/de not_active Expired - Lifetime
- 1992-06-15 US US07/898,265 patent/US5468589A/en not_active Expired - Lifetime
- 1992-06-18 KR KR1019920010597A patent/KR100255680B1/ko not_active IP Right Cessation
-
1995
- 1995-06-07 US US08/477,612 patent/US5670299A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100255680B1 (ko) | 2000-05-01 |
JP3030672B2 (ja) | 2000-04-10 |
KR930001349A (ko) | 1993-01-16 |
US5670299A (en) | 1997-09-23 |
EP0520642A1 (de) | 1992-12-30 |
JPH05249682A (ja) | 1993-09-28 |
EP0520642B1 (de) | 1998-10-28 |
US5468589A (en) | 1995-11-21 |
DE69227405D1 (de) | 1998-12-03 |
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