DE3879471T2 - Verfahren zur herstellung eines photoresistmusters und apparat dafuer. - Google Patents

Verfahren zur herstellung eines photoresistmusters und apparat dafuer.

Info

Publication number
DE3879471T2
DE3879471T2 DE8888106389T DE3879471T DE3879471T2 DE 3879471 T2 DE3879471 T2 DE 3879471T2 DE 8888106389 T DE8888106389 T DE 8888106389T DE 3879471 T DE3879471 T DE 3879471T DE 3879471 T2 DE3879471 T2 DE 3879471T2
Authority
DE
Germany
Prior art keywords
producing
photoresist pattern
apparatus therefor
therefor
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888106389T
Other languages
English (en)
Other versions
DE3879471D1 (de
Inventor
Ulrich Christoph Boettiger
Bernhard Hafner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3879471D1 publication Critical patent/DE3879471D1/de
Publication of DE3879471T2 publication Critical patent/DE3879471T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
DE8888106389T 1988-04-21 1988-04-21 Verfahren zur herstellung eines photoresistmusters und apparat dafuer. Expired - Fee Related DE3879471T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88106389A EP0338110B1 (de) 1988-04-21 1988-04-21 Verfahren zur Herstellung eines Photoresistmusters und Apparat dafür

Publications (2)

Publication Number Publication Date
DE3879471D1 DE3879471D1 (de) 1993-04-22
DE3879471T2 true DE3879471T2 (de) 1993-09-16

Family

ID=8198905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888106389T Expired - Fee Related DE3879471T2 (de) 1988-04-21 1988-04-21 Verfahren zur herstellung eines photoresistmusters und apparat dafuer.

Country Status (4)

Country Link
US (2) US4935334A (de)
EP (1) EP0338110B1 (de)
JP (2) JP2654450B2 (de)
DE (1) DE3879471T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10969693B2 (en) 2017-07-06 2021-04-06 Temicon Gmbh Producing light-exposed structures on a workpiece

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3842354A1 (de) * 1988-12-16 1990-06-21 Kernforschungsz Karlsruhe Verfahren zur lithographischen herstellung von galvanisch abformbaren mikrostrukturen mit dreieckigem oder trapezfoermigem querschnitt
EP0469370A3 (en) * 1990-07-31 1992-09-09 Gold Star Co. Ltd Etching process for sloped side walls
JP2932650B2 (ja) * 1990-09-17 1999-08-09 松下電器産業株式会社 微細構造物の製造方法
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
JPH05206025A (ja) * 1992-01-27 1993-08-13 Rohm Co Ltd 微細加工方法
WO1994007179A1 (en) * 1992-09-22 1994-03-31 Knirck Jeffrey G Method and apparatus for the photolithographic exposure of excess photoresist on a substrate
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
AU5681194A (en) * 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
JPH06260383A (ja) * 1993-03-03 1994-09-16 Nikon Corp 露光方法
EP0627666B1 (de) * 1993-05-24 2003-02-05 Holtronic Technologies Plc Vorrichtung und Verfahren zur Veränderung des Massstabs eines gedruckten Musters
DE4333620A1 (de) * 1993-10-15 1995-04-20 Jenoptik Technologie Gmbh Anordnung und Verfahren zur Erzeugung von Dosisprofilen für die Herstellung von Oberflächenprofilen
US6358672B2 (en) * 1998-02-05 2002-03-19 Samsung Electronics Co., Ltd. Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist
US6383719B1 (en) 1998-05-19 2002-05-07 International Business Machines Corporation Process for enhanced lithographic imaging
DE19833756A1 (de) * 1998-07-16 2000-01-27 Hertz Inst Heinrich Anordnung zur Herstellung vertikaler Strukturen in Halbleitermaterialien
US6094256A (en) * 1998-09-29 2000-07-25 Nikon Precision Inc. Method for forming a critical dimension test structure and its use
US6093507A (en) * 1999-01-04 2000-07-25 Taiwan Semiconductor Manufacturing Company Simplified process for fabricating levinson and chromeless type phase shifting masks
GB2349237A (en) 1999-04-24 2000-10-25 Sharp Kk An optical element, method of manufacture thereof and a display device incorporating said element.
US6747727B2 (en) 1999-04-26 2004-06-08 Hong-Da Liu Method for the manufacture of a liquid crystal display
US6284443B1 (en) 1999-04-30 2001-09-04 International Business Machines Corporation Method and apparatus for image adjustment
KR100346603B1 (ko) * 1999-10-06 2002-07-26 아남반도체 주식회사 기울어진 패턴 프로파일을 얻을 수 있는 마스크 패턴
KR100346604B1 (ko) * 1999-11-10 2002-07-26 아남반도체 주식회사 계단형 패턴 프로파일을 얻을 수 있는 마스크 패턴
JP2002329648A (ja) * 2001-04-27 2002-11-15 Mitsubishi Electric Corp 半導体装置の製造方法
US6956659B2 (en) * 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
JP4673513B2 (ja) 2001-08-01 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003240997A (ja) * 2002-02-21 2003-08-27 Fujitsu Ltd 空間反射型構造を有する光集積回路の製造方法
EP1353217A1 (de) * 2002-03-29 2003-10-15 JSR Corporation Optisches Ausrichtungsverfahren und Flüssigkristallanzeigevorrichtung
US6974653B2 (en) * 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks
US20040173921A1 (en) * 2003-03-07 2004-09-09 Konica Minolta Holdings, Inc. Electron beam depicting method, production method of mother die, mother die, production method of metallic mold, metallic mold, optical element and electron beam depicting apparatus
ITMI20031045A1 (it) * 2003-05-23 2004-11-24 St Microelectronics Srl Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio.
JP4508594B2 (ja) * 2003-10-01 2010-07-21 大日本印刷株式会社 カラーフィルタの製造方法および半透過半反射型液晶表示装置用カラーフィルタ
JP4184918B2 (ja) * 2003-10-22 2008-11-19 株式会社東芝 コンタクトホールの形成方法
US7256873B2 (en) * 2004-01-28 2007-08-14 Asml Netherlands B.V. Enhanced lithographic resolution through double exposure
US20080165257A1 (en) * 2007-01-05 2008-07-10 Micron Technology, Inc. Configurable pixel array system and method
US7812869B2 (en) * 2007-05-11 2010-10-12 Aptina Imaging Corporation Configurable pixel array system and method
US8409457B2 (en) * 2008-08-29 2013-04-02 Micron Technology, Inc. Methods of forming a photoresist-comprising pattern on a substrate
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
DE102009006885B4 (de) * 2009-01-30 2011-09-22 Advanced Micro Devices, Inc. Verfahren zum Erzeugen einer abgestuften Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen und Halbleiterbauelemente
SE537101C2 (sv) 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
JP2012168230A (ja) * 2011-02-10 2012-09-06 Seiko Epson Corp 構造体の製造方法
JPWO2012157697A1 (ja) * 2011-05-19 2014-07-31 株式会社日立ハイテクノロジーズ 回折格子製造方法、分光光度計、および半導体装置の製造方法
FR2977071A1 (fr) * 2011-06-27 2012-12-28 St Microelectronics Crolles 2 Procede de dopage controle d'un substrat semi-conducteur
JP5780350B2 (ja) * 2013-11-14 2015-09-16 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、及び有機半導体素子の製造方法
US20210231889A1 (en) * 2020-01-06 2021-07-29 Attonics Systems Pte Ltd Optical arrays, filter arrays, optical devices and method of fabricating same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422442A (en) * 1966-01-12 1969-01-14 Us Army Micro-electronic form masking system
US4224361A (en) * 1978-09-05 1980-09-23 International Business Machines Corporation High temperature lift-off technique
GB2035610B (en) * 1978-10-20 1983-03-23 Hitachi Ltd Wafer projection aligner
US4310743A (en) * 1979-09-24 1982-01-12 Hughes Aircraft Company Ion beam lithography process and apparatus using step-and-repeat exposure
US4308337A (en) * 1980-03-10 1981-12-29 Rca Corporation Uniform light exposure of positive photoresist for replicating spiral groove in plastic substrate
JPS5721819A (en) * 1980-07-15 1982-02-04 Fujitsu Ltd Forming method for pattern
JPS5914888B2 (ja) * 1981-04-09 1984-04-06 財団法人半導体研究振興会 パタ−ン形成方法
US4545673A (en) * 1983-07-08 1985-10-08 Bergsma Calvin D Photographic modifier method and apparatus for graphics and the like
US4716443A (en) * 1984-11-29 1987-12-29 Byers Thomas L Photographic image precision reproportioning system
US4748477A (en) * 1985-04-30 1988-05-31 Canon Kabushiki Kaisha Exposure apparatus
FR2590376A1 (fr) * 1985-11-21 1987-05-22 Dumant Jean Marc Procede de masquage et masque utilise
DE3581941D1 (de) * 1985-12-21 1991-04-04 Ibm Deutschland Verfahren zum herstellen eines photolackmusters.
US4708466A (en) * 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
JPS6349909A (ja) * 1986-08-20 1988-03-02 Canon Inc 位置決め制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10969693B2 (en) 2017-07-06 2021-04-06 Temicon Gmbh Producing light-exposed structures on a workpiece

Also Published As

Publication number Publication date
JP2654450B2 (ja) 1997-09-17
US5111240A (en) 1992-05-05
DE3879471D1 (de) 1993-04-22
EP0338110A1 (de) 1989-10-25
JPH0212806A (ja) 1990-01-17
US4935334A (en) 1990-06-19
EP0338110B1 (de) 1993-03-17
JPH0758004A (ja) 1995-03-03
JP2502939B2 (ja) 1996-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee