DE69809387T2 - Verfahren zur herstellung von resisten - Google Patents
Verfahren zur herstellung von resistenInfo
- Publication number
- DE69809387T2 DE69809387T2 DE69809387T DE69809387T DE69809387T2 DE 69809387 T2 DE69809387 T2 DE 69809387T2 DE 69809387 T DE69809387 T DE 69809387T DE 69809387 T DE69809387 T DE 69809387T DE 69809387 T2 DE69809387 T2 DE 69809387T2
- Authority
- DE
- Germany
- Prior art keywords
- producing resist
- resist
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
- C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/14—Esterification
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/18—Introducing halogen atoms or halogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
- C08F2800/20—Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2810/00—Chemical modification of a polymer
- C08F2810/30—Chemical modification of a polymer leading to the formation or introduction of aliphatic or alicyclic unsaturated groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/118—Initiator containing with inhibitor or stabilizer
- Y10S430/119—Hydroxyl or carbonyl group containing as sole functional groups
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27518597 | 1997-09-22 | ||
PCT/JP1998/003788 WO1999015935A1 (fr) | 1997-09-22 | 1998-08-26 | Nouveau procede de preparation de vernis a couvrir |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69809387D1 DE69809387D1 (de) | 2002-12-19 |
DE69809387T2 true DE69809387T2 (de) | 2003-09-11 |
Family
ID=17551873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69809387T Expired - Lifetime DE69809387T2 (de) | 1997-09-22 | 1998-08-26 | Verfahren zur herstellung von resisten |
Country Status (8)
Country | Link |
---|---|
US (2) | US6284427B1 (de) |
EP (1) | EP0942329B1 (de) |
JP (1) | JP3258341B2 (de) |
KR (1) | KR100607384B1 (de) |
CN (1) | CN1275095C (de) |
DE (1) | DE69809387T2 (de) |
TW (1) | TW558674B (de) |
WO (1) | WO1999015935A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284427B1 (en) * | 1997-09-22 | 2001-09-04 | Clariant Finance (Bvi) Limited | Process for preparing resists |
US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
US6072006A (en) * | 1998-11-06 | 2000-06-06 | Arch Specialty Chemicals, Inc. | Preparation of partially cross-linked polymers and their use in pattern formation |
US6414101B1 (en) | 1999-03-26 | 2002-07-02 | Shin-Etsu Chemical Co., Ltd. | Dendritic polymers and making method |
JP3903638B2 (ja) * | 1999-04-12 | 2007-04-11 | 株式会社日立製作所 | パタン形成方法 |
KR100550936B1 (ko) * | 1999-12-08 | 2006-02-13 | 제일모직주식회사 | 히드록시스티렌계 포토레지스트 조성물의 제조방법 및그에 의해 수득된 포토레지스트 조성물 |
KR100616399B1 (ko) * | 2000-03-09 | 2006-08-29 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭형 레지스트 재료 |
JP3437138B2 (ja) * | 2000-03-14 | 2003-08-18 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
US6541179B2 (en) * | 2000-03-21 | 2003-04-01 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
JP2008303218A (ja) * | 2000-07-28 | 2008-12-18 | Mitsubishi Chemicals Corp | (メタ)アクリル酸エステルの製造方法 |
US20020037472A1 (en) * | 2000-09-08 | 2002-03-28 | Shipley Company, L.L.C. | Novel polymers and photoresist compositions comprising labile polymer backbones for short wave imaging |
JP3771815B2 (ja) * | 2001-05-31 | 2006-04-26 | 東京応化工業株式会社 | 感光性積層体、それに用いるポジ型レジスト組成物及びそれらを用いるレジストパターン形成方法 |
JP4554122B2 (ja) * | 2001-08-06 | 2010-09-29 | 東京応化工業株式会社 | 化学増幅型ポジ型液晶素子用レジスト組成物 |
JP3890365B2 (ja) * | 2001-11-01 | 2007-03-07 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP3986927B2 (ja) | 2002-08-22 | 2007-10-03 | 富士通株式会社 | 半導体装置の製造方法 |
JP3988873B2 (ja) | 2002-08-22 | 2007-10-10 | 富士通株式会社 | 半導体装置の製造方法 |
DE10243742B4 (de) * | 2002-09-20 | 2007-11-08 | Qimonda Ag | Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists |
DE10243745A1 (de) * | 2002-09-20 | 2004-04-15 | Infineon Technologies Ag | Hochempfindlicher und hochauflösender Fotoresist für die Ionenprojektions-Lithographie |
US7022459B2 (en) * | 2003-03-14 | 2006-04-04 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
JP3857692B2 (ja) | 2004-01-15 | 2006-12-13 | 株式会社東芝 | パターン形成方法 |
JP2005350609A (ja) * | 2004-06-11 | 2005-12-22 | Daicel Chem Ind Ltd | 側鎖にアセタール構造を有する高分子化合物及びその製造法 |
DE102004063416A1 (de) | 2004-12-23 | 2006-07-06 | Az Electronic Materials (Germany) Gmbh | Verfahren zur Herstellung einer Photoresistlösung |
KR100688570B1 (ko) * | 2005-08-31 | 2007-03-02 | 삼성전자주식회사 | 식각 마스크 패턴 형성용 코팅 조성물 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
US20070117041A1 (en) * | 2005-11-22 | 2007-05-24 | Christoph Noelscher | Photosensitive coating for enhancing a contrast of a photolithographic exposure |
US8715918B2 (en) * | 2007-09-25 | 2014-05-06 | Az Electronic Materials Usa Corp. | Thick film resists |
WO2009093419A1 (ja) * | 2008-01-21 | 2009-07-30 | Daicel Chemical Industries, Ltd. | 化学増幅型フォトレジスト用樹脂及びその製造方法 |
JP5733263B2 (ja) * | 2012-04-24 | 2015-06-10 | 信越化学工業株式会社 | 変性ポリヒドロキシスチレン樹脂及びその製造方法並びにレジスト材料 |
WO2016043317A1 (ja) * | 2014-09-19 | 2016-03-24 | 日産化学工業株式会社 | レジストパターン被覆用塗布液 |
JP6910108B2 (ja) * | 2015-03-31 | 2021-07-28 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP6783540B2 (ja) * | 2015-03-31 | 2020-11-11 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
TWI717543B (zh) | 2016-08-09 | 2021-02-01 | 德商馬克專利公司 | 光阻組合物及其用途 |
WO2020129611A1 (ja) * | 2018-12-20 | 2020-06-25 | 丸善石油化学株式会社 | 親水性保護基を有するレジスト用重合体 |
US11737521B2 (en) | 2021-05-12 | 2023-08-29 | Curt Tucker | Multiple-utility release buckle |
CN115785361B (zh) * | 2022-12-08 | 2024-01-05 | 山东大学 | 一种含丙烯酸酯侧链的光刻胶材料及其制备方法与应用 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3817009A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
DE3817012A1 (de) | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
JP2800186B2 (ja) * | 1988-07-07 | 1998-09-21 | 住友化学工業株式会社 | 集積回路製作用ポジ型レジスト組成物の製造方法 |
US5446126A (en) | 1991-04-01 | 1995-08-29 | Ocg Microelectronic Materials, Inc. | Method for removing metal impurities from resist components |
JP3030672B2 (ja) * | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
JPH0756336A (ja) * | 1993-06-07 | 1995-03-03 | Ajinomoto Co Inc | 樹脂組成物 |
US5443736A (en) | 1993-10-20 | 1995-08-22 | Shipley Company Inc. | Purification process |
JP2960656B2 (ja) * | 1994-04-25 | 1999-10-12 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
TW394861B (en) | 1994-04-25 | 2000-06-21 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition |
DE69516101T2 (de) * | 1994-12-20 | 2001-01-11 | Arch Speciality Chemicals Inc | Vernetzte Polymere |
EP0718315B1 (de) * | 1994-12-20 | 1997-08-27 | Ocg Microelectronic Materials, Inc. | Verfahren zur Herstellung von teilgeschützten Phenolharzen |
DE69515163D1 (de) * | 1994-12-20 | 2000-03-30 | Olin Microelectronic Chem Inc | Fotolackzusammensetzungen |
JP3553213B2 (ja) * | 1995-06-20 | 2004-08-11 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JPH1073923A (ja) * | 1996-07-05 | 1998-03-17 | Taiyo Ink Mfg Ltd | 感光性樹脂組成物及びプリント配線板の製造方法 |
US6284427B1 (en) * | 1997-09-22 | 2001-09-04 | Clariant Finance (Bvi) Limited | Process for preparing resists |
US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
-
1998
- 1998-08-26 US US09/308,582 patent/US6284427B1/en not_active Expired - Lifetime
- 1998-08-26 JP JP50418099A patent/JP3258341B2/ja not_active Expired - Lifetime
- 1998-08-26 WO PCT/JP1998/003788 patent/WO1999015935A1/ja not_active Application Discontinuation
- 1998-08-26 CN CNB988013770A patent/CN1275095C/zh not_active Expired - Lifetime
- 1998-08-26 KR KR1019997004457A patent/KR100607384B1/ko not_active IP Right Cessation
- 1998-08-26 EP EP98940555A patent/EP0942329B1/de not_active Expired - Lifetime
- 1998-08-26 DE DE69809387T patent/DE69809387T2/de not_active Expired - Lifetime
- 1998-09-21 TW TW087115704A patent/TW558674B/zh not_active IP Right Cessation
-
2001
- 2001-04-02 US US09/824,198 patent/US6686121B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0942329B1 (de) | 2002-11-13 |
EP0942329A1 (de) | 1999-09-15 |
KR100607384B1 (ko) | 2006-08-02 |
US6686121B2 (en) | 2004-02-03 |
CN1239556A (zh) | 1999-12-22 |
WO1999015935A1 (fr) | 1999-04-01 |
US6284427B1 (en) | 2001-09-04 |
CN1275095C (zh) | 2006-09-13 |
US20010024765A1 (en) | 2001-09-27 |
DE69809387D1 (de) | 2002-12-19 |
TW558674B (en) | 2003-10-21 |
EP0942329A4 (de) | 1999-12-15 |
KR20000069048A (ko) | 2000-11-25 |
JP3258341B2 (ja) | 2002-02-18 |
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8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J |
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8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU |