DE69408260D1 - Lichtempfindliche Polysilanharzzusammensetzung und Verfahren zur Herstellung eines Musters damit - Google Patents

Lichtempfindliche Polysilanharzzusammensetzung und Verfahren zur Herstellung eines Musters damit

Info

Publication number
DE69408260D1
DE69408260D1 DE69408260T DE69408260T DE69408260D1 DE 69408260 D1 DE69408260 D1 DE 69408260D1 DE 69408260 T DE69408260 T DE 69408260T DE 69408260 T DE69408260 T DE 69408260T DE 69408260 D1 DE69408260 D1 DE 69408260D1
Authority
DE
Germany
Prior art keywords
producing
resin composition
polysilane resin
pattern therewith
photosensitive polysilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69408260T
Other languages
English (en)
Other versions
DE69408260T2 (de
Inventor
Emi Ueta
Hiroshi Tsushima
Iwao Sumiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Paint Co Ltd
Original Assignee
Nippon Paint Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Paint Co Ltd filed Critical Nippon Paint Co Ltd
Application granted granted Critical
Publication of DE69408260D1 publication Critical patent/DE69408260D1/de
Publication of DE69408260T2 publication Critical patent/DE69408260T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
DE69408260T 1993-10-20 1994-10-18 Lichtempfindliche Polysilanharzzusammensetzung und Verfahren zur Herstellung eines Musters damit Expired - Lifetime DE69408260T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26228793A JP3274918B2 (ja) 1993-10-20 1993-10-20 ポリシラン系感光性樹脂組成物およびそれを用いるパターン形成方法

Publications (2)

Publication Number Publication Date
DE69408260D1 true DE69408260D1 (de) 1998-03-05
DE69408260T2 DE69408260T2 (de) 1998-05-20

Family

ID=17373693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408260T Expired - Lifetime DE69408260T2 (de) 1993-10-20 1994-10-18 Lichtempfindliche Polysilanharzzusammensetzung und Verfahren zur Herstellung eines Musters damit

Country Status (5)

Country Link
EP (1) EP0650093B1 (de)
JP (1) JP3274918B2 (de)
KR (1) KR100367263B1 (de)
DE (1) DE69408260T2 (de)
TW (1) TW417039B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245180B1 (ko) * 1996-05-29 2000-02-15 니시무로 타이죠 감광성 조성물 및 그를 이용한 패턴 형성방법
US5955192A (en) * 1996-11-20 1999-09-21 Shin-Etsu Chemical Co., Ltd. Conductive circuit board and method for making
JP3301370B2 (ja) * 1997-12-11 2002-07-15 信越化学工業株式会社 ポリシランパターン形成基板の製造方法
JP3410968B2 (ja) * 1998-06-22 2003-05-26 株式会社東芝 パターン形成方法および感光性組成物
JP3539234B2 (ja) * 1998-10-22 2004-07-07 信越化学工業株式会社 金属パターン用被膜形成用ポリシラン組成物及び金属パターン形成方法
JP4017795B2 (ja) * 1999-08-27 2007-12-05 富士フイルム株式会社 光波長変換素子およびその作製方法
JP4775834B2 (ja) 2002-08-05 2011-09-21 東京エレクトロン株式会社 エッチング方法
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
JP4493906B2 (ja) * 2002-11-12 2010-06-30 富士通株式会社 液晶表示装置およびその製造方法
US10667340B2 (en) 2015-01-29 2020-05-26 Dsgi Technologies, Inc. Microwave assisted parallel plate E-field applicator
KR20190125183A (ko) * 2018-04-27 2019-11-06 도쿄 오카 고교 가부시키가이샤 감에너지성 조성물, 경화물, 및 패턴 형성 방법
CN112859520A (zh) * 2021-01-20 2021-05-28 深圳市撒比斯科技有限公司 一种低能量固化的光刻胶、抗蚀剂图案及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588801A (en) * 1984-04-05 1986-05-13 The United States Of America As Represented By The United States Department Of Energy Polysilane positive photoresist materials and methods for their use
US4820788A (en) * 1986-10-31 1989-04-11 John M. Zeigler Poly(silyl silane)homo and copolymers
JPH0643655A (ja) * 1991-03-04 1994-02-18 Internatl Business Mach Corp <Ibm> レジスト画像の生成プロセス及び電子デバイス
KR950002875B1 (ko) * 1991-07-08 1995-03-27 가부시키가이샤 도시바 감광성 조성물

Also Published As

Publication number Publication date
DE69408260T2 (de) 1998-05-20
KR950012154A (ko) 1995-05-16
TW417039B (en) 2001-01-01
EP0650093A1 (de) 1995-04-26
KR100367263B1 (ko) 2003-03-19
EP0650093B1 (de) 1998-01-28
JP3274918B2 (ja) 2002-04-15
JPH07114188A (ja) 1995-05-02

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