DE69430229D1 - Verfahren zur Herstellung eines BICMOS-Bauteils - Google Patents
Verfahren zur Herstellung eines BICMOS-BauteilsInfo
- Publication number
- DE69430229D1 DE69430229D1 DE69430229T DE69430229T DE69430229D1 DE 69430229 D1 DE69430229 D1 DE 69430229D1 DE 69430229 T DE69430229 T DE 69430229T DE 69430229 T DE69430229 T DE 69430229T DE 69430229 D1 DE69430229 D1 DE 69430229D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- bicmos
- component
- bicmos component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/123—Polycrystalline diffuse anneal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/106,458 US5334549A (en) | 1993-08-13 | 1993-08-13 | BiCMOS process that supports merged devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69430229D1 true DE69430229D1 (de) | 2002-05-02 |
DE69430229T2 DE69430229T2 (de) | 2002-10-02 |
Family
ID=22311510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69430229T Expired - Lifetime DE69430229T2 (de) | 1993-08-13 | 1994-08-12 | Verfahren zur Herstellung eines BICMOS-Bauteils |
Country Status (6)
Country | Link |
---|---|
US (2) | US5334549A (de) |
EP (1) | EP0638935B1 (de) |
JP (1) | JP3638313B2 (de) |
KR (1) | KR950007087A (de) |
DE (1) | DE69430229T2 (de) |
TW (1) | TW265462B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334549A (en) * | 1993-08-13 | 1994-08-02 | Texas Instruments Incorporated | BiCMOS process that supports merged devices |
US5441903A (en) * | 1993-12-03 | 1995-08-15 | Texas Instruments Incorporated | BiCMOS process for supporting merged devices |
US5422290A (en) * | 1994-02-28 | 1995-06-06 | National Semiconductor Corporation | Method of fabricating BiCMOS structures |
US5665993A (en) * | 1994-09-29 | 1997-09-09 | Texas Instruments Incorporated | Integrated circuit including a FET device and Schottky diode |
US5783475A (en) * | 1995-11-13 | 1998-07-21 | Motorola, Inc. | Method of forming a spacer |
JP3070554B2 (ja) | 1997-11-28 | 2000-07-31 | 日本電気株式会社 | 半導体装置及びその製造方法 |
EP1791181B1 (de) * | 2005-11-25 | 2010-02-03 | STMicroelectronics S.r.l. | Transistorstruktur mit hoher Eingangsimpedanz und hohem Stromvermögen und zugehöriges Herstellungsverfahren |
US7439119B2 (en) * | 2006-02-24 | 2008-10-21 | Agere Systems Inc. | Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method |
JP5817205B2 (ja) * | 2011-04-28 | 2015-11-18 | 株式会社デンソー | 半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166068A (en) * | 1981-04-07 | 1982-10-13 | Toshiba Corp | Semiconductor device |
US4495376A (en) * | 1981-07-27 | 1985-01-22 | Texas Instruments Incorporated | Carrier for integrated circuit |
US4541167A (en) * | 1984-01-12 | 1985-09-17 | Texas Instruments Incorporated | Method for integrated circuit device isolation |
JPH0666425B2 (ja) * | 1984-12-07 | 1994-08-24 | 日本電信電話株式会社 | 複合型半導体装置 |
DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
US4958213A (en) * | 1987-12-07 | 1990-09-18 | Texas Instruments Incorporated | Method for forming a transistor base region under thick oxide |
US5006476A (en) * | 1988-09-07 | 1991-04-09 | North American Philips Corp., Signetics Division | Transistor manufacturing process using three-step base doping |
US5171702A (en) * | 1989-07-21 | 1992-12-15 | Texas Instruments Incorporated | Method for forming a thick base oxide in a BiCMOS process |
EP0436297A3 (en) * | 1989-12-04 | 1992-06-17 | Raytheon Company | Small bicmos transistor |
US5262345A (en) * | 1990-01-25 | 1993-11-16 | Analog Devices, Inc. | Complimentary bipolar/CMOS fabrication method |
US4987089A (en) * | 1990-07-23 | 1991-01-22 | Micron Technology, Inc. | BiCMOS process and process for forming bipolar transistors on wafers also containing FETs |
JPH04363059A (ja) * | 1990-08-23 | 1992-12-15 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US5028557A (en) * | 1990-08-27 | 1991-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making a reverse self-aligned BIMOS transistor integrated circuit |
US5171699A (en) * | 1990-10-03 | 1992-12-15 | Texas Instruments Incorporated | Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication |
US5334549A (en) * | 1993-08-13 | 1994-08-02 | Texas Instruments Incorporated | BiCMOS process that supports merged devices |
-
1993
- 1993-08-13 US US08/106,458 patent/US5334549A/en not_active Expired - Lifetime
-
1994
- 1994-04-28 US US08/234,194 patent/US5541134A/en not_active Expired - Lifetime
- 1994-08-12 EP EP94112630A patent/EP0638935B1/de not_active Expired - Lifetime
- 1994-08-12 DE DE69430229T patent/DE69430229T2/de not_active Expired - Lifetime
- 1994-08-13 KR KR1019940020016A patent/KR950007087A/ko not_active Application Discontinuation
- 1994-08-15 JP JP19165894A patent/JP3638313B2/ja not_active Expired - Fee Related
- 1994-09-16 TW TW083108546A patent/TW265462B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH07176641A (ja) | 1995-07-14 |
EP0638935A1 (de) | 1995-02-15 |
KR950007087A (ko) | 1995-03-21 |
US5334549A (en) | 1994-08-02 |
EP0638935B1 (de) | 2002-03-27 |
TW265462B (de) | 1995-12-11 |
JP3638313B2 (ja) | 2005-04-13 |
US5541134A (en) | 1996-07-30 |
DE69430229T2 (de) | 2002-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |