FR2793952B1 - Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique - Google Patents

Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique

Info

Publication number
FR2793952B1
FR2793952B1 FR9906485A FR9906485A FR2793952B1 FR 2793952 B1 FR2793952 B1 FR 2793952B1 FR 9906485 A FR9906485 A FR 9906485A FR 9906485 A FR9906485 A FR 9906485A FR 2793952 B1 FR2793952 B1 FR 2793952B1
Authority
FR
France
Prior art keywords
damascene
producing
organic dielectric
level including
interconnection level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9906485A
Other languages
English (en)
Other versions
FR2793952A1 (fr
Inventor
Didier Louis
Emile Lajoinie
Christian Arvet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9906485A priority Critical patent/FR2793952B1/fr
Priority to PCT/FR2000/001370 priority patent/WO2000072369A1/fr
Publication of FR2793952A1 publication Critical patent/FR2793952A1/fr
Application granted granted Critical
Publication of FR2793952B1 publication Critical patent/FR2793952B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
FR9906485A 1999-05-21 1999-05-21 Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique Expired - Fee Related FR2793952B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9906485A FR2793952B1 (fr) 1999-05-21 1999-05-21 Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique
PCT/FR2000/001370 WO2000072369A1 (fr) 1999-05-21 2000-05-19 Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9906485A FR2793952B1 (fr) 1999-05-21 1999-05-21 Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique

Publications (2)

Publication Number Publication Date
FR2793952A1 FR2793952A1 (fr) 2000-11-24
FR2793952B1 true FR2793952B1 (fr) 2001-08-31

Family

ID=9545873

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9906485A Expired - Fee Related FR2793952B1 (fr) 1999-05-21 1999-05-21 Procede de realisation d'un niveau d'interconnexion de type damascene comprenant un dielectrique organique

Country Status (2)

Country Link
FR (1) FR2793952B1 (fr)
WO (1) WO2000072369A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150351A (ja) * 1985-12-25 1987-07-04 Seiko Epson Corp レジストの除去方法
JPH0770524B2 (ja) * 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
JPH0228975A (ja) * 1988-07-19 1990-01-31 Toshiba Corp イメージセンサの製造方法
JP3614242B2 (ja) * 1996-04-12 2005-01-26 三菱瓦斯化学株式会社 フォトレジスト剥離剤及び半導体集積回路の製造方法
JPH11150101A (ja) * 1997-11-18 1999-06-02 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2793952A1 (fr) 2000-11-24
WO2000072369A1 (fr) 2000-11-30

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Legal Events

Date Code Title Description
ST Notification of lapse