DE69734078D1 - Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats - Google Patents
Verfahren zur Reinigung einer porösen Fläche eines HalbleitersubstratsInfo
- Publication number
- DE69734078D1 DE69734078D1 DE69734078T DE69734078T DE69734078D1 DE 69734078 D1 DE69734078 D1 DE 69734078D1 DE 69734078 T DE69734078 T DE 69734078T DE 69734078 T DE69734078 T DE 69734078T DE 69734078 D1 DE69734078 D1 DE 69734078D1
- Authority
- DE
- Germany
- Prior art keywords
- cleaning
- semiconductor substrate
- porous surface
- porous
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15763296 | 1996-05-28 | ||
JP15763296 | 1996-05-28 | ||
JP14283796 | 1996-06-05 | ||
JP14283696 | 1996-06-05 | ||
JP14283696 | 1996-06-05 | ||
JP14283796 | 1996-06-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69734078D1 true DE69734078D1 (de) | 2005-10-06 |
DE69734078T2 DE69734078T2 (de) | 2006-07-06 |
Family
ID=27318518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69734078T Expired - Lifetime DE69734078T2 (de) | 1996-05-28 | 1997-05-28 | Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0810643B1 (de) |
KR (1) | KR100370312B1 (de) |
CN (1) | CN1132229C (de) |
CA (1) | CA2206139C (de) |
DE (1) | DE69734078T2 (de) |
SG (1) | SG66370A1 (de) |
TW (1) | TW355815B (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001189A (en) | 1996-09-30 | 1999-12-14 | Micron Technology, Inc. | Method for reducing gaseous species of contamination in wet processes |
US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
JP3595441B2 (ja) * | 1997-12-29 | 2004-12-02 | 三菱電機株式会社 | 塩酸過水を用いた洗浄方法 |
JP3218564B2 (ja) * | 1998-01-14 | 2001-10-15 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
US6021789A (en) * | 1998-11-10 | 2000-02-08 | International Business Machines Corporation | Wafer cleaning system with progressive megasonic wave |
CN1071713C (zh) * | 1998-11-11 | 2001-09-26 | 华南师范大学华南量子电子学研究所 | 砷化镓、磷化镓衬底干处理方法 |
US6410436B2 (en) * | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
WO2001099168A1 (fr) | 2000-06-23 | 2001-12-27 | Fujitsu Limited | Dispositif a semi-conducteur et procede de fabrication associe |
US20100224215A1 (en) * | 2009-03-06 | 2010-09-09 | Imec | Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning |
JP2013157443A (ja) * | 2012-01-30 | 2013-08-15 | Siltronic Ag | 洗浄方法 |
JP5872382B2 (ja) * | 2012-05-24 | 2016-03-01 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 超音波洗浄方法 |
CN103736690B (zh) * | 2013-12-31 | 2018-12-18 | 上海集成电路研发中心有限公司 | 硅片清洗方法 |
CN105618423A (zh) * | 2014-10-15 | 2016-06-01 | 北京华兴太极信息科技有限责任公司 | 多层印制板去除孔壁钻污生产线用超声震动清洗处理方法 |
JP6658354B2 (ja) | 2016-06-30 | 2020-03-04 | 株式会社Sumco | 試料表面の作製方法、試料表面の分析方法、電界支援酸化用プローブおよびこれを備えた走査型プローブ顕微鏡 |
CN106925565B (zh) * | 2017-02-09 | 2018-08-24 | 同济大学 | 一种lbo晶体的刻蚀清洗方法 |
KR102548592B1 (ko) * | 2018-01-23 | 2023-06-28 | 에이씨엠 리서치 (상하이), 인코포레이티드 | 기판 세정 방법 및 장치 |
JP7373492B2 (ja) * | 2018-02-07 | 2023-11-02 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | 基板の洗浄方法及び洗浄装置 |
CN110624893B (zh) * | 2019-09-25 | 2022-06-14 | 上海华力集成电路制造有限公司 | 一种兆声波组合气体喷雾清洗装置及其应用 |
CN111085497A (zh) * | 2019-12-18 | 2020-05-01 | 武汉百臻半导体科技有限公司 | 一种多晶硅片清洗系统及其清洗方法 |
CN111659640B (zh) * | 2020-05-14 | 2022-03-18 | 富乐德科技发展(大连)有限公司 | 半导体设备腔体内铝基材多孔分气装置超洁净清洗工艺 |
CN112452918A (zh) * | 2020-10-30 | 2021-03-09 | 怀化市盛德生物科技有限责任公司 | 一种农业产品进料清洗清洁机构 |
CN112921326B (zh) * | 2021-01-22 | 2022-11-08 | 广东威圳兴技术有限公司 | 一种汽车零件压铸铝合金表面处理工艺 |
CN113289972B (zh) * | 2021-04-27 | 2022-09-27 | 华能阜新风力发电有限责任公司 | 一种适用于散热片的节能清洁装置 |
CN118491956B (zh) * | 2024-07-17 | 2024-09-10 | 山东省农业技术推广中心(山东省农业农村发展研究中心) | 一种食用菌菌渣再利用清洗设备及其清洗方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62198127A (ja) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | 半導体ウエハの洗浄方法 |
JPH0314230A (ja) * | 1989-06-13 | 1991-01-22 | Toshiba Corp | 半導体ウェーハの洗浄方法及び装置 |
JP2984348B2 (ja) * | 1990-10-05 | 1999-11-29 | 株式会社東芝 | 半導体ウェーハの処理方法 |
JP3136606B2 (ja) * | 1990-10-30 | 2001-02-19 | ソニー株式会社 | ウエハの洗浄方法 |
JPH0661859B2 (ja) * | 1991-02-28 | 1994-08-17 | 清二 加川 | 多孔質フィルムの製造装置 |
JPH06275866A (ja) * | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | ポーラス半導体発光装置と製造方法 |
US5331180A (en) * | 1992-04-30 | 1994-07-19 | Fujitsu Limited | Porous semiconductor light emitting device |
TW212146B (en) * | 1992-05-25 | 1993-09-01 | Yoshihide Shibano | Supersonic waves washing method |
JPH06168660A (ja) * | 1992-11-30 | 1994-06-14 | Sony Corp | 含浸形カソード及びその製造方法 |
JPH06254521A (ja) * | 1993-03-08 | 1994-09-13 | Olympus Optical Co Ltd | 脱脂洗浄方法 |
-
1997
- 1997-05-23 TW TW086106988A patent/TW355815B/zh active
- 1997-05-26 CA CA002206139A patent/CA2206139C/en not_active Expired - Fee Related
- 1997-05-28 DE DE69734078T patent/DE69734078T2/de not_active Expired - Lifetime
- 1997-05-28 EP EP97303616A patent/EP0810643B1/de not_active Expired - Lifetime
- 1997-05-28 CN CN97105404A patent/CN1132229C/zh not_active Expired - Fee Related
- 1997-05-28 SG SG1997001766A patent/SG66370A1/en unknown
- 1997-05-28 KR KR1019970021273A patent/KR100370312B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0810643B1 (de) | 2005-08-31 |
SG66370A1 (en) | 1999-07-20 |
CN1166693A (zh) | 1997-12-03 |
CA2206139C (en) | 2003-07-15 |
KR100370312B1 (ko) | 2003-04-10 |
CN1132229C (zh) | 2003-12-24 |
DE69734078T2 (de) | 2006-07-06 |
KR970077290A (ko) | 1997-12-12 |
CA2206139A1 (en) | 1997-11-28 |
EP0810643A2 (de) | 1997-12-03 |
EP0810643A3 (de) | 1998-03-11 |
TW355815B (en) | 1999-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69734078D1 (de) | Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats | |
DE69528611D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrates | |
DE69630924D1 (de) | Flüssige Zusammensetzung und Verfahren zur Bildung einer rostsicheren Schicht | |
DE69703052D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung eines Spülmittels zur Halbleiter-Reinigung | |
DE69916728D1 (de) | Verfahren zur Reinigung eines Halbleitersubstrats | |
DE69636618D1 (de) | Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür | |
DE69631233D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE69515926D1 (de) | Verfahren zur Züchtung einer Halbleiterverbindungsschicht | |
DE69937326D1 (de) | Verfahren zur bestimmung eines substrates | |
DE69841235D1 (de) | Verfahren zur Herstellung einer oberflächenemittierenden Halbleitervorrichtung | |
DE19781838T1 (de) | Verfahren zur Beschichtung eines Substrats | |
DE69739444D1 (de) | Verfahren zur Verbesserung der Lötbarkeit einer Oberfläche | |
DE69333152D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrates | |
DE69331815D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrates | |
DE69331816D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE69636426D1 (de) | Verfahren zur Reinigung von halbleitenden Wafern | |
DE69908101D1 (de) | Verfahren zum beschichten und ätzen einer dielektrischen schicht | |
DE69418302D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit ebener Oberfläche | |
ATE309292T1 (de) | Verfahren zur beschichtung einer oberfläche | |
DE69633339D1 (de) | Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers | |
DE60109080D1 (de) | Verfahren zum Modifizieren einer Oberfläche eines kompakten Substrates | |
DE60144382D1 (de) | Verfahren zur reinigung der oberfläche eines substrates | |
DE69228349D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
ATE390473T1 (de) | Verfahren zur reinigung einer harten oberfläche | |
DE69305939D1 (de) | Verfahren zur Herstellung eines keramischen Schaltungssubstrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |